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91. 发明专利

SG11201503852QA TRAY APPARATUS, REACTION CHAMBER AND MOCVD DEVICE 未知
公开(公告)号：SG11201503852QA
公开(公告)日：2015-06-29
申请号：SG11201503852Q
申请日：2013-11-12
申请人： BEIJING NMC CO LTD
发明人： TU YE
IPC分类号： C23C16/44 , C23C16/30 , C23C16/458

92. 发明专利

SG10201501149PA DEEP SILICON ETCHING DEVICE AND GAS INTAKE SYSTEM FOR DEEP SILICON ETCHING DEVICE 未知
公开(公告)号：SG10201501149PA
公开(公告)日：2015-04-29
申请号：SG10201501149P
申请日：2010-08-19
申请人： BEIJING NMC CO LTD
发明人： ZHOU YANG
IPC分类号： C23C16/00 , H01L21/3065
摘要： A deep-trench silicon etching apparatus, including a reaction chamber and a gas source cabinet, the gas source cabinet is connected to the reaction chamber via two independently controlled gas paths; wherein, a first gas path is used to introduce process gas for etch step from the gas source cabinet into the reaction chamber; a second gas path is used to introduce process gas for deposition step from the gas source cabinet into the reaction chamber. The present invention is used to solve the problems of gas mixture and gas delay occurring when process steps are switched.

93. 发明专利

SG171466A1 PLASMA PROCESSING DEVICE 未知
公开(公告)号：SG171466A1
公开(公告)日：2011-07-28
申请号：SG2011041431
申请日：2009-10-20
申请人： BEIJING NMC CO LTD
发明人： WEI GANG
摘要： AbstractA plasma processing device includes a first electrode plate (3), asecond electrode plate (4), a matching device (8), a power distribution device (9) and a power supply device (1). The first electrode plate (3) includes at least two sub-electrode plates (31, 32) insulated from each other; the power supply device (1) is connected to the power distribution device (9) via the matching device (8); the powerdistribution device (9) is connected to the first electrode plate (3) for inputting and distributing the power of the power supply device (1) to each of the sub-electrode plates (31, 32); the power distribution device (9) at least includes capacitors (C1, C2) and/or inductances (L1, L2). The plasma processing device distributes the power of the power supplydevice (1) into several portions corresponding to the number of the sub-electrodes (31, 32) through the power distribution device (9), and each portion of the power is individually inputted to the corresponding sub-electrode (31, 32) to acquire individual electric field distribution between each sub-electrode plate (31, 32) and the second electrode plate (4).

94. 发明授权

US09552965B2 Inductively coupled coil and inductively coupled plasma device using the same 有权
标题翻译：感应耦合线圈和电感耦合等离子体装置使用它们
公开(公告)号：US09552965B2
公开(公告)日：2017-01-24
申请号：US12439352
申请日：2007-01-26
申请人： Qiaoli Song , Jianhui Nan
发明人： Qiaoli Song , Jianhui Nan
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32 , H01F38/10 , H01F38/14
CPC分类号： H01J37/3211 , H01F27/28 , H01F38/10 , H01F38/14 , H01J37/321 , H01J37/32119 , H01J37/32183 , H01J2237/3344
摘要： The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source. It can make the plasma distribute uniformly on the wafer in the reaction chamber so that the difference in chemical reaction rate on the surface of the wafer is small and the quality of the etched wafer is improved. They can be applied in a semiconductor wafer manufacturing apparatus, and they can also be adapted to other apparatuses.
摘要翻译：本发明公开了一种电感耦合线圈和使用该线圈的电感耦合等离子体装置。电感耦合线圈包括内部线圈和外部线圈，它们彼此相对并且同轴布置，内部线圈包括具有嵌套在一起的相同构造的多个内部各自的分支，所述多个内部各自的分支对称地布置有相对于电感耦合线圈的轴线; 所述外部线圈包括具有嵌套在一起的相同配置的多个外部各自的分支，所述多个外部相应的分支相对于所述电感耦合线圈的轴对称地布置。电感耦合线圈位于感应耦合等离子体装置的反应室上，并连接到RF源。可以使等离子体均匀地分布在反应室中的晶片上，使晶片表面的化学反应速度差小，蚀刻后的晶片的品质提高。它们可以应用于半导体晶片制造装置中，并且也可以适用于其他装置。

95. 发明申请

US20160322243A1 CHAMBER 审中-公开
标题翻译：房子
公开(公告)号：US20160322243A1
公开(公告)日：2016-11-03
申请号：US15109281
申请日：2014-12-12
申请人： BEIJING NMC CO., LTD.
发明人： Xuewei WU
IPC分类号： H01L21/67 , B08B7/00
CPC分类号： H01L21/67109 , B08B7/0071 , H01L21/67126 , H01L21/6719
摘要： Embodiments of the invention provide a chamber for semiconductor processing, which includes a chamber body and an isolation window, the chamber body being of a tubby structure and having an upper end which is an open end, and the isolation window being arranged at the open end of the chamber body and used for sealing the chamber. The chamber further includes an isolation window fixing structure used for fixing the isolation window at the open end of the chamber body and a first fixing part and a second fixing part connected with each other, the first fixing part being fixedly connected with an edge area of an upper surface of the isolation window, and the second fixing part being fixedly connected with the chamber body.
摘要翻译：本发明的实施例提供了一种用于半导体处理的腔室，其包括腔室主体和隔离窗口，腔室主体为桶式结构，并且具有作为开口端的上端，隔离窗口布置在开口端并用于密封腔室。所述室还包括用于将所述隔离窗固定在所述室主体的开口端处的隔离窗固定结构以及彼此连接的第一固定部和第二固定部，所述第一固定部与所述隔室窗的边缘区域隔离窗的上表面，第二固定部分与腔体固定连接。

96. 发明授权

US08547021B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08547021B2
公开(公告)日：2013-10-01
申请号：US13127665
申请日：2009-10-20
申请人： Gang Wei
发明人： Gang Wei
IPC分类号： H01J7/24
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01J37/32568
摘要： A plasma processing device includes a first electrode plate (3), a second electrode plate (4), a matching device (8), a power distribution device (9) and a power supply device (1). The first electrode plate (3) includes at least two sub-electrode plates (31, 32) insulated from each other; the power supply device (1) is connected to the power distribution device (9) via the matching device (8); the power distribution device (9) is connected to the first electrode plate (3) for inputting and distributing the power of the power supply device (1) to each of the sub-electrode plates (31, 32); the power distribution device (9) at least includes capacitors (C1, C2) and/or inductances (L1, L2). The plasma processing device distributes the power of the power supply device (1) into several portions corresponding to the number of the sub-electrodes (31, 32) through the power distribution device (9), and each portion of the power is individually inputted to the corresponding sub-electrode (31, 32) to acquire individual electric field distribution between each sub-electrode plate (31, 32) and the second electrode plate (4).
摘要翻译：等离子体处理装置包括第一电极板（3），第二电极板（4），匹配装置（8），配电装置（9）和电源装置（1）。第一电极板（3）包括彼此绝缘的至少两个子电极板（31,32）电源装置（1）经由匹配装置（8）与配电装置（9）连接; 配电装置（9）与第一电极板（3）连接，用于将电力供给装置（1）的电力输入并分配给各个副电极板（31,32）。配电装置（9）至少包括电容器（C1，C2）和/或电感（L1，L2）。等离子体处理装置通过配电装置（9）将电力供给装置（1）的电力分配成与副电极（31,32）的数量对应的数个部分，并且各部分电力被分别输入到相应的子电极（31,32）以获取每个子电极板（31,32）和第二电极板（4）之间的单独的电场分布。

97. 发明申请

US20160322206A1 PROCESS CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
标题翻译：工艺台和半导体加工设备
公开(公告)号：US20160322206A1
公开(公告)日：2016-11-03
申请号：US15109050
申请日：2014-12-29
申请人： BEIJING NMC CO., LTD.
发明人： Feng LV , Fenggang ZHANG , Mengxin ZHAO , Peijun DING
IPC分类号： H01J37/32 , C23C14/00 , H01J37/34 , H01L21/67
CPC分类号： H01J37/32642 , C23C14/0068 , C23C14/34 , C23C14/564 , H01J37/32449 , H01J37/32633 , H01J37/32733 , H01J37/32853 , H01J37/34 , H01J37/3411 , H01L21/67167 , H01L21/6719 , H01L21/67207
摘要： Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.
摘要翻译：本发明的实施例提供一种处理室和半导体处理装置。根据至少一个实施例，处理室包括反应室，气体引入系统和晶片转移装置。反应室设置在处理室中，用于在晶片上进行处理，气体导入系统用于向反应室提供处理气体，并且晶片转移装置用于将晶片转移到反应室中。衬套环组件设置在反应室中，并且构造成使得在衬套环组件本身和反应室的内侧壁之间形成流动均匀化空腔，从而均匀地输送来自气体的处理气体引入系统，通过流动均匀化腔进入反应室。

98. 发明授权

US09478439B2 Substrate etching method 有权
标题翻译：基板蚀刻方法
公开(公告)号：US09478439B2
公开(公告)日：2016-10-25
申请号：US14646909
申请日：2013-11-01
申请人： BEIJING NMC CO., LTD.
发明人： Zhongwei Jiang
IPC分类号： H01L21/302 , H01L21/3213 , H01L21/3065 , B81C1/00
CPC分类号： H01L21/32137 , B81C1/00531 , B81C2201/0112 , B81C2201/0132 , H01L21/30655
摘要： Embodiments of the invention provide a substrate etching method, which includes: a deposition operation for depositing a polymer on a side wall of a silicon groove, an etching operation for etching the side wall of the silicon groove, and repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, a chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method, according to various embodiments of the invention, avoid the problem of damaging the side wall, thereby making the side wall smooth.
摘要翻译：本发明的实施例提供了一种基板蚀刻方法，其包括：用于在硅槽的侧壁上沉积聚合物的沉积操作，用于蚀刻硅槽的侧壁的蚀刻操作，以及重复沉积操作和蚀刻操作至少两次。在完成蚀刻操作的所有循环的过程中，根据预设规则，反应室的室压力从预设的最高压力降低到预设的最低压力。根据本发明的各种实施例的基板蚀刻方法避免了损坏侧壁的问题，从而使侧壁平滑。

99. 发明授权

US09399817B2 Magnetron source, magnetron sputtering apparatus and magnetron sputtering method 有权
标题翻译：磁控管源，磁控溅射装置和磁控溅射法
公开(公告)号：US09399817B2
公开(公告)日：2016-07-26
申请号：US13977314
申请日：2011-09-30
申请人： Yangchao Li , Bo Geng , Xuewei Wu , Guoqing Qiu , Xu Liu
发明人： Yangchao Li , Bo Geng , Xuewei Wu , Guoqing Qiu , Xu Liu
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3455 , H01J37/347
摘要： Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.
摘要翻译：提供了一种磁控管源，其包括目标材料，位于其上的磁控管和连接到磁控管的扫描机构，用于控制磁控管在目标材料上方的移动。扫描机构包括桃形轨道，磁控管可移动地设置在其上; 第一驱动轴，其底端与桃形轨道的极坐标的原点连接，用于驱动桃形轨道围绕第一驱动轴的轴线旋转; 连接到第一驱动轴的第一驱动器，用于驱动第一驱动轴旋转; 以及第二驱动器，用于驱动磁控管经由传输组件沿着桃形轨迹移动。还提供了包括磁控管的磁控溅射装置和使用磁控溅射装置的磁控溅射方法。

100. 发明申请

US20140363975A1 SUBSTRATE ETCHING METHOD AND SUBSTRATE PROCESSING DEVICE 有权
标题翻译：基板蚀刻方法和基板处理装置
公开(公告)号：US20140363975A1
公开(公告)日：2014-12-11
申请号：US14366488
申请日：2012-06-04
申请人： Gang Wei , Chun Wang , Dongsan Li
发明人： Gang Wei , Chun Wang , Dongsan Li
IPC分类号： B81C1/00 , B81C99/00
CPC分类号： B81C1/00531 , B81C1/00619 , B81C99/0025 , B81C2201/0132 , H01L21/30655
摘要： A substrate etching method and a substrate processing device, the substrate etching method includes: S1: placing a substrate to be processed into a reaction chamber; S2: supplying etching gas into the reaction chamber; S3: turning on an excitation power supply to generate plasma in the reaction chamber; S4: turning on a bias power supply to apply bias power to the substrate; S5: turning off the bias power supply, and meanwhile, starting to supply deposition gas into the reaction chamber; S6: stopping supply of the deposition gas into the reaction chamber, and meanwhile, turning on the bias power supply; S7: repeating steps S5-S6, until the etching process is completed. In the whole etching process, the etching operation is always performed, and the deposition operation is performed sometimes. Therefore, during the deposition operation, the plasma in the reaction chamber can etch away at least a part of deposited polymers formed by the deposition operation on a sidewall of an etched section, so that the sidewall of the etched section of the substrate is smooth.
摘要翻译：基板蚀刻方法和基板处理装置，基板蚀刻方法包括：S1：将待处理的基板放置在反应室中; S2：向反应室供给蚀刻气体; S3：打开激励电源以在反应室中产生等离子体; S4：打开偏置电源以向基板施加偏置功率; S5：关闭偏置电源，同时开始向反应室供应沉积气体; S6：停止向反应室供应沉积气体，同时打开偏置电源; S7：重复步骤S5-S6，直到蚀刻处理完成。在整个蚀刻过程中，总是执行蚀刻操作，并且有时执行沉积操作。因此，在沉积操作期间，反应室中的等离子体可以蚀刻掉在蚀刻部分的侧壁上通过沉积操作形成的沉积聚合物的至少一部分，从而衬底的蚀刻部分的侧壁是光滑的。

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