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1. 发明授权

US07176491B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07176491B2
公开(公告)日：2007-02-13
申请号：US11091570
申请日：2005-03-29
申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
发明人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
IPC分类号： H01L29/04
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78624 , H01L2029/7863
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管T，该薄膜晶体管T包括源极区，漏极区，具有预定沟道长度的沟道区，具有低于源区杂质浓度的杂质浓度的第一GOLD区， GOLD区域的杂质浓度低于漏极区域的杂质浓度，栅极绝缘膜和栅电极。在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度金地区。

2. 发明申请

US20050263770A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050263770A1
公开(公告)日：2005-12-01
申请号：US11137660
申请日：2005-05-26
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
IPC分类号： H01L51/50 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L21/84 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/786 , H05B33/14
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/78621 , H01L29/78627
摘要： A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.
摘要翻译：在TFT阵列基板的第一区域形成包括栅极，源极区，漏极区，GOLD区和沟道区的第一薄膜晶体管。在第二区域形成包括栅电极，源极区，漏极区，GOLD区和沟道区的第二薄膜晶体管。第二薄膜晶体管的GOLD区域的GOLD长度（0.5μm）被设定为比第一薄膜晶体管的GOLD区域的GOLD长度（1.5μm）短。因此，获得了旨在减小半导体元件所占的面积的半导体器件。

3. 发明申请

US20050253195A1 Semiconductor device and image display device 审中-公开
标题翻译：半导体装置及图像显示装置
公开(公告)号：US20050253195A1
公开(公告)日：2005-11-17
申请号：US11109818
申请日：2005-04-20
申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara , Naoki Nakagawa
发明人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara , Naoki Nakagawa
IPC分类号： H01L27/08 , H01L21/00 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L27/12 , H01L29/786
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the source region, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The gate electrode is formed overlapping with and facing the channel region and the GOLD region. A semiconductor device is obtained, directed to improving source-drain breakdown voltage and AC stress resistance, and achieving desired current property.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管，其包括源极区，漏极区，具有预定沟道长度的沟道区，GOLD区和具有低于源区杂质浓度的杂质浓度的LDD区，具有杂质浓度低于漏区杂质浓度的GOLD区和LDD区，栅极绝缘膜和栅电极。栅电极与沟道区域和金区域重叠并面对沟道区域。获得了一种半导体器件，旨在改善源 - 漏击穿电压和AC抗应力，并实现期望的电流特性。

4. 发明申请

US20050236618A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050236618A1
公开(公告)日：2005-10-27
申请号：US11091570
申请日：2005-03-29
申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
发明人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
IPC分类号： H01L27/08 , H01L21/336 , H01L21/77 , H01L21/8234 , H01L27/088 , H01L27/12 , H01L29/786 , H01L31/113
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78624 , H01L2029/7863
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管T，该薄膜晶体管T包括源极区，漏极区，具有预定沟道长度的沟道区，具有低于源区杂质浓度的杂质浓度的第一GOLD区， GOLD区域的杂质浓度低于漏极区域的杂质浓度，栅极绝缘膜和栅电极。在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度金地区。

5. 发明授权

US07396707B2 Fabrication method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07396707B2
公开(公告)日：2008-07-08
申请号：US11565429
申请日：2006-11-30
申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
发明人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
IPC分类号： H01L29/47
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78624 , H01L2029/7863
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管T，该薄膜晶体管T包括源极区，漏极区，具有预定沟道长度的沟道区，具有低于源区杂质浓度的杂质浓度的第一GOLD区， GOLD区域的杂质浓度低于漏极区域的杂质浓度，栅极绝缘膜和栅电极。在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度金地区。

6. 发明授权

US07262433B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07262433B2
公开(公告)日：2007-08-28
申请号：US11137660
申请日：2005-05-26
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
IPC分类号： H01L27/12
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/78621 , H01L29/78627
摘要： A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.
摘要翻译：在TFT阵列基板的第一区域形成包括栅极，源极区，漏极区，GOLD区和沟道区的第一薄膜晶体管。在第二区域形成包括栅电极，源极区，漏极区，GOLD区和沟道区的第二薄膜晶体管。第二薄膜晶体管的GOLD区域的GOLD长度（0.5μm）被设定为比第一薄膜晶体管的GOLD区域的GOLD长度（1.5μm）短。因此，获得了旨在减小半导体元件所占的面积的半导体器件。

7. 发明申请

US20070087535A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20070087535A1
公开(公告)日：2007-04-19
申请号：US11565429
申请日：2006-11-30
申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
发明人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78624 , H01L2029/7863
摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.
摘要翻译：在玻璃基板上形成氮化硅膜和氧化硅膜。在氧化硅膜上形成薄膜晶体管T，该薄膜晶体管T包括源极区，漏极区，具有预定沟道长度的沟道区，具有低于源区杂质浓度的杂质浓度的第一GOLD区， GOLD区域的杂质浓度低于漏极区域的杂质浓度，栅极绝缘膜和栅电极。在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度金地区。

8. 发明授权

US08750554B2 Speaker diaphragm and speaker device 有权
标题翻译：扬声器隔膜和扬声器设备
公开(公告)号：US08750554B2
公开(公告)日：2014-06-10
申请号：US13502651
申请日：2010-10-15
申请人： Takao Sakamoto
发明人： Takao Sakamoto
IPC分类号： H04R7/14
CPC分类号： H04R7/14 , H04R7/12
摘要： A speaker diaphragm (2), and plural dimples (16) which are disposed radially from a center side toward the outside of the speaker diaphragm (2) and which have arch structures formed to have a concave-like shapes so as to disperse a stress are provided, whereby while weight saving is realized in terms of the speaker diaphragm (2) by the plural dimples (16) formed to have the concave-like shapes, high rigidity is maintained by the arch structures of the dimples concerned, and a maximum sound pressure can be increased along with the weight saving concerned.
摘要翻译：扬声器振动板（2）和多个凹部（16），其从扬声器振动膜（2）的中心侧朝向外侧放置，并且具有形成为具有凹状的弓形结构，以分散应力由此，通过形成为具有凹状的多个凹部（16），通过扬声器振动膜（2）实现重量节约，通过相关凹坑的拱形结构保持高刚性，并且最大声压可以随着重量的减轻而增加。

9. 发明申请

US20060182307A1 Speaker diaphragm, speaker unit and speaker apparatus 审中-公开
标题翻译：扬声器隔膜，扬声器单元和扬声器设备
公开(公告)号：US20060182307A1
公开(公告)日：2006-08-17
申请号：US11342709
申请日：2006-01-31
申请人： Takao Sakamoto
发明人： Takao Sakamoto
IPC分类号： H04R11/02
CPC分类号： H04R9/06
摘要： To keep sounds emitted from a speaker apparatus in high quality. According to one embodiment of the present invention, a top layer and a back layer in a diaphragm of a speaker unit built in a speaker apparatus, and a reinforcement board for reinforcement which is interposed between the top layer and the back layer, and is disposed from the center part of diaphragm to the outer circumference part of diaphragm of the speaker diaphragm are provided. Thereby, unnecessary vibration caused by lack of the rigidity of the diaphragm can be prevented, and a possibility that the reinforcement board comes off or falls off can be remarkably reduced.
摘要翻译：保持扬声器设备发出的声音的质量。根据本发明的一个实施例，设置在扬声器装置中的扬声器单元的隔膜中的顶层和背层，以及设置在顶层和背层之间的用于加强的加强板，并且被布置提供从隔膜的中心部分到扬声器隔膜的隔膜的外周部分。由此，可以防止由隔膜刚性引起的不必要的振动，可以显着地减少加强板脱落的可能性。

10. 发明授权

US4924163A Side support control device for use in a vehicle seat 失效
标题翻译：用于车辆座椅的侧支撑控制装置
公开(公告)号：US4924163A
公开(公告)日：1990-05-08
申请号：US411271
申请日：1989-09-22
申请人： Takao Sakamoto , Tomio Takano
发明人： Takao Sakamoto , Tomio Takano
IPC分类号： B60N2/02 , B60N2/90
CPC分类号： B60N2/4492 , B60N2/0224 , B60N2002/026
摘要： A side support control device for use in a vehicle seat in which by an occupant's switch operation a motor is driven to thereby control the operation of a side support so as to prevent the occupant from losing his or her sitting position. In the control device, the number of rotations of the motor to move the side support is detected by a rotation sensor, the detected number of counts is stored in a counter memory in link with the switch operation, and the amounts of opening and closing of the side support can be adjusted quickly and easily by switch operations.
摘要翻译：一种用于车辆座椅的侧支撑控制装置，其中通过乘员的开关操作来驱动电动机，从而控制侧支架的操作，从而防止乘客失去坐姿。在控制装置中，通过旋转传感器检测用于移动侧支架的电动机的转数，将检测到的计数数与存储在开关操作中的计数器存储器中相关联，并且打开和关闭的量侧面支撑可以通过开关操作快速方便地进行调整。

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