专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06599402B2 Electro-chemical deposition cell for face-up processing of single semiconductor substrates 失效
公开(公告)号：US06599402B2
公开(公告)日：2003-07-29
申请号：US10178469
申请日：2002-06-24
申请人： Yezdi Dordi , Joe Stevens , Roy Edwards , Bob Lowrance , Michael Sugarman , Mark Denome
发明人： Yezdi Dordi , Joe Stevens , Roy Edwards , Bob Lowrance , Michael Sugarman , Mark Denome
IPC分类号： C25D1706
CPC分类号： H01L21/68721 , C25D5/20 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/005 , C25D17/08 , C25D21/00 , C25D21/18 , H01L21/67051 , H01L21/6715 , H01L21/6838 , H01L21/68742 , H01L21/68792
摘要： An apparatus and method for electro-chemically depositing a uniform metal layer onto a substrate is provided. In one aspect, the apparatus includes a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. In another aspect, the apparatus further includes a dual catch-cup system having an electroplating solution catch-cup and a rinse catch-cup. The dual catch-cup system provides separation of the electroplating solution and the rinse solutions during processing and provides re-circulating systems for the different solutions of the electroplating system.

2. 发明授权

US06416647B1 Electro-chemical deposition cell for face-up processing of single semiconductor substrates 失效
标题翻译：用于单面半导体衬底正面加工的电化学沉积池
公开(公告)号：US06416647B1
公开(公告)日：2002-07-09
申请号：US09294240
申请日：1999-04-19
申请人： Yezdi Dordi , Joe Stevens , Roy Edwards , Bob Lowrance , Michael Sugarman , Mark Denome
发明人： Yezdi Dordi , Joe Stevens , Roy Edwards , Bob Lowrance , Michael Sugarman , Mark Denome
IPC分类号： C25D504
CPC分类号： H01L21/68721 , C25D5/20 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/005 , C25D17/08 , C25D21/00 , C25D21/18 , H01L21/67051 , H01L21/6715 , H01L21/6838 , H01L21/68742 , H01L21/68792
摘要： The invention provides an electro-chemical deposition cell for face-up processing of semiconductor substrates comprising a substrate support member, a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. Preferably, the anode comprises a consumable metal source disposed in a liquid permeable structure, and the anode and a cavity ring define a cavity for holding and distributing the electroplating solution to the substrate plating surface. Preferably, the substrate support member comprises a vacuum chuck having vacuum ports disposed on the substrate supporting surface that serves to provide suction during processing and to provide a blow-off gas flow to prevent backside contamination during substrate transfers. The substrate support member also rotates and vibrates during processing to enhance the electro-deposition onto the substrate plating surface.
摘要翻译：本发明提供一种用于半导体衬底的面朝上处理的电化学沉积池，包括衬底支撑构件，连接到衬底镀层表面的阴极，设置在衬底支撑构件上方的阳极和流体地供应电镀液的电镀溶液入口连接阳极和基板电镀表面。优选地，阳极包括设置在液体可渗透结构中的消耗性金属源，并且阳极和空腔环限定用于将电镀溶液保持并分配到基板电镀表面的空腔。优选地，衬底支撑构件包括具有设置在衬底支撑表面上的真空端口的真空吸盘，其用于在加工期间提供吸力并且提供吹出气体流以防止衬底转移期间的背面污染。衬底支撑构件在加工过程中也旋转并振动，以增强对衬底镀层表面的电沉积。

3. 发明授权

US06635157B2 Electro-chemical deposition system 失效
公开(公告)号：US06635157B2
公开(公告)日：2003-10-21
申请号：US09867780
申请日：2001-05-29
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

4. 发明申请

US20060246690A1 Electro-chemical deposition system 失效
公开(公告)号：US20060246690A1
公开(公告)日：2006-11-02
申请号：US11476945
申请日：2006-06-27
申请人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： H01L21/20 , B05D3/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

5. 发明授权

US06258220B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06258220B1
公开(公告)日：2001-07-10
申请号：US09289074
申请日：1999-04-08
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

6. 发明授权

US06423636B1 Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer 失效
标题翻译：用于提高种子层生产率的工艺顺序，并实现半导体晶片上的铜金属化工艺的3mm边缘排除
公开(公告)号：US06423636B1
公开(公告)日：2002-07-23
申请号：US09443832
申请日：1999-11-19
申请人： Yezdi Dordi , Michael Sugarman
发明人： Yezdi Dordi , Michael Sugarman
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , C25D7/123 , C25D17/001 , H01L21/2885
摘要： The present invention generally provides an apparatus and a method for electrochemical deposition of a metal layer on a substrate that achieves high throughput and minimal edge exclusion. The invention provides a method for forming a metal layer on a substrate comprising: depositing a full coverage seed layer over the substrate; electrochemically depositing a metal layer over the seed layer; and removing any exposed seed layer from an annular edge portion of the substrate. The invention also provides an apparatus for forming a metal layer on a substrate comprising: an electrochemical deposition cell having a cathode contact member adapted to contact a peripheral portion of a substrate at less than about 3 mm from an edge of the substrate, a processing cell adapted to remove any exposed seed layer on a peripheral portion of the substrate; and a transfer chamber having a robot adapted to transfer a substrate between the electrochemical deposition cell and the processing cell for removing exposed seed layer.
摘要翻译：本发明通常提供了一种在基板上电化学沉积金属层的设备和方法，其实现了高通量和最小的边缘排除。本发明提供了一种在衬底上形成金属层的方法，包括：在衬底上沉积全覆盖种子层; 在种子层上电化学沉积金属层; 以及从衬底的环形边缘部分去除任何暴露的种子层。本发明还提供了一种用于在衬底上形成金属层的装置，包括：电化学沉积池，具有阴极接触构件，阴极接触构件适于接触距离衬底边缘小于约3mm的衬底的周边部分，处理室适于去除所述衬底的周边部分上的任何暴露的种子层; 以及具有机器人的转移室，其适于在电化学沉积池和处理室之间转移衬底以去除暴露的种子层。

7. 发明授权

US06267853B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06267853B1
公开(公告)日：2001-07-31
申请号：US09350210
申请日：1999-07-09
申请人： Yezdi Dordi , Muhammad Atif Malik , Henan Hao , Timothy H. Franklin , Joe Stevens , Donald Olgado
发明人： Yezdi Dordi , Muhammad Atif Malik , Henan Hao , Timothy H. Franklin , Joe Stevens , Donald Olgado
IPC分类号： C25B1500
CPC分类号： C25D17/001 , C25D7/123 , H01L21/2885 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes an edge bead removal/spin-rinse-dry (EBR/SRD) station disposed on the mainframe adjacent the loading station, a rapid thermal anneal chamber attached to the loading station, a seed layer repair station disposed on the mainframe, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在与装载站相邻的主机上的边缘珠去除/旋转干燥（EBR / SRD）站，附接到装载站的快速热退火室，种子层修复站设置在主机上，以及用于控制电化学沉积过程和电化学沉积系统的部件的系统控制器。

8. 发明授权

US08623456B2 Methods for atomic layer deposition 有权
标题翻译：原子层沉积方法
公开(公告)号：US08623456B2
公开(公告)日：2014-01-07
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： C23C16/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

9. 发明申请

US20120269987A1 Processes and Systems for Engineering a Barrier Surface for Copper Deposition 审中-公开
标题翻译：用于铜沉积的阻挡层表面工艺和系统
公开(公告)号：US20120269987A1
公开(公告)日：2012-10-25
申请号：US13534366
申请日：2012-06-27
申请人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon , Fritz C. Redeker , William Thie , Arthur M. Howald
发明人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon , Fritz C. Redeker , William Thie , Arthur M. Howald
IPC分类号： C23C18/54 , C23C16/06 , B05D5/12
CPC分类号： H01L21/7685 , C23C18/1632 , C23C18/1651 , C23C18/1844 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67161 , H01L21/67207 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76867 , H01L21/76871 , H01L21/76879
摘要： An integrated system for processing a substrate in controlled environment to enable deposition of a thin copper seed layer on a surface of a metallic barrier layer of a copper interconnect is provided. The system includes a lab-ambient transfer chamber, a vacuum transfer chamber, a vacuum process module for cleaning an exposed surface of a metal oxide of a underlying metal, a vacuum process module for depositing the metallic barrier layer, and a controlled-ambient transfer chamber filled with an inert gas, wherein at least one controlled-ambient process module is coupled to the controlled-ambient transfer chamber. In addition, the system includes an electroless copper deposition process module used to deposit the thin layer of copper seed layer on the surface of the metallic barrier layer.
摘要翻译：提供了一种用于在受控环境中处理衬底以使薄铜种子层在铜互连的金属阻挡层的表面上沉积的集成系统。该系统包括实验室环境转移室，真空转移室，用于清洁下面金属的金属氧化物的暴露表面的真空处理模块，用于沉积金属阻挡层的真空处理模块和受控环境转移室内装有惰性气体，其中至少一个受控环境的过程模块耦合到受控环境的传送室。此外，该系统包括用于在金属阻挡层的表面上沉积铜籽晶层的薄层的无电铜沉积工艺模块。

10. 发明申请

US20110306203A1 INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURING A DAMASCENE STRUCTURE 审中-公开
标题翻译：互连结构和制造大分子结构的方法
公开(公告)号：US20110306203A1
公开(公告)日：2011-12-15
申请号：US13218035
申请日：2011-08-25
申请人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
发明人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
摘要翻译：提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。钌区介于第一阻挡层和氧化钌区之间。钌氧化物区位于钌区和富钌区之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式