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    • 7. 发明申请
    • Process for producing semiconductor device and semiconductor device
    • 半导体装置及半导体装置的制造方法
    • US20050079705A1
    • 2005-04-14
    • US10506792
    • 2003-03-20
    • Koichi Takeuchi
    • Koichi Takeuchi
    • H01L21/312H01L21/768H01L21/4763
    • H01L21/76831H01L21/02118H01L21/02126H01L21/3105H01L21/31058H01L21/76801H01L21/76808
    • A method of producing a semiconductor device wherein an already formed opening portion inner wall of an organic based interlayer insulation film is prevented from changing in quality or corroding when performing etching on other organic material. The production method includes a step of depositing organic based interlayer insulation films (4, 6), a step of forming an opening on the organic based interlayer insulation films (4, 6), and a step of silylating a wall surface portion of the organic based interlayer insulation films (4, 6) exposed in the opening portion for reforming (forming reformed layers (4a, 6a) by silylation). A more preferable production method further includes a step of forming protective layers (4b, 6b) including an inorganic based insulation material on a surface of the silylated opening portion wall surface.
    • 一种制造半导体器件的方法,其中当对其它有机材料进行蚀刻时,防止了有机基层间绝缘膜的已经形成的开口部内壁的质量变化或腐蚀。 制备方法包括沉积有机基层间绝缘膜(4,6)的步骤,在有机基层间绝缘膜(4,6)上形成开口的步骤,以及将有机层间绝缘膜的壁表面部分甲硅烷基化的步骤 暴露在用于重整的开口部分中的基于层间绝缘膜(4,6)(通过甲硅烷基化形成重整层(4a,6a))。 更优选的制造方法还包括在甲硅烷基化开口部壁面的表面上形成包含无机类绝缘材料的保护层(4b,6b)的工序。
    • 8. 发明授权
    • Method and a device for purifying exhaust gas of an internal combustion
engine
    • 内燃机废气净化方法及装置
    • US5979157A
    • 1999-11-09
    • US911532
    • 1997-08-14
    • Yukio KinugasaTakaaki ItouKoichi HoshiKoichi Takeuchi
    • Yukio KinugasaTakaaki ItouKoichi HoshiKoichi Takeuchi
    • F01N3/08F01N3/10F01N3/20F01N3/22F01N3/24F01N3/32F01N9/00F01N13/02F02D41/02F01N3/00
    • F01N3/0238F01N13/009F01N13/0097F01N3/0835F01N3/0871F01N3/0878F01N3/2026F01N3/22F01N3/222F01N3/323F01N9/00F01N2250/12F01N2410/00F01N2430/06F01N2570/16F01N3/32Y02T10/26Y02T10/47
    • A device for purifying exhaust gas includes an HC adsorbent and an exhaust gas purifying catalyst disposed in an exhaust gas passage in this order from the upstream side. The exhaust gas purifying catalyst is provided with an O.sub.2 storage capability, i.e., the exhaust gas purifying catalyst is capable of absorbing oxygen in the exhaust gas when the air-fuel ratio of the exhaust gas is lean, and is capable of releasing the absorbed oxygen when the air-fuel ratio of the exhaust gas becomes rich. When the engine starts, the HC adsorbent adsorbs HC in the exhaust gas. When the temperature of the exhaust gas becomes high, the HC adsorbent releases the adsorbed HC. The device also includes an engine control unit which operates the engine at a lean air-fuel ratio during a predetermined period before the releasing of the HC from the HC adsorbent occurs. Therefore, oxygen is absorbed and stored in the exhaust gas purifying catalyst before the releasing of HC occurs. When the releasing of HC from the HC adsorbent occurs, the air-fuel ratio of the exhaust gas flowing into the exhaust gas purifying catalyst becomes rich due to the HC released from the HC adsorbent. This causes the exhaust gas purifying catalyst to release the absorbed oxygen, and the HC in the exhaust gas is purified by the exhaust gas purifying catalyst using the released oxygen.
    • 废气净化装置包括从上游侧依次排列在废气通道内的HC吸附剂和排气净化催化剂。 废气净化催化剂具有O 2储存能力,即,当废气的空燃比稀的时,废气净化催化剂能够吸收废气中的氧,并且能够释放吸收的氧 当排气的空燃比变浓时, 当发动机启动时,HC吸附剂吸附废气中的HC。 当废气的温度变高时,HC吸附剂释放吸附的HC。 该装置还包括发动机控制单元,其在从HC吸附剂释放HC之前的预定时间段内以稀空燃比操作发动机。 因此,在HC释放出现之前,氧气被吸收并储存在排气净化催化剂中。 当从HC吸附剂中释放出HC时,流入废气净化催化剂的排气的空燃比由于从HC吸附剂释放的HC而变浓。 这使得废气净化催化剂释放吸收的氧,并且通过使用释放的氧气的废气净化催化剂净化废气中的HC。