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1. 发明授权

US6015918A Allyl-derived precursor and synthesis method 有权
标题翻译：烯丙基衍生的前体和合成方法
公开(公告)号：US6015918A
公开(公告)日：2000-01-18
申请号：US281731
申请日：1999-03-30
申请人： Wei-Wei Zhuang , Tue Nguyen , Greg Michael Stecker , David Russell Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Greg Michael Stecker , David Russell Evans , Sheng Teng Hsu
IPC分类号： C07F1/00 , C07F1/08 , C07F7/08 , C23C16/18 , C07F1/10
CPC分类号： C23C16/18 , C07F1/08 , C07F7/082
摘要： A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane, trihalosilane, triphenylsilane, alkoxyl, halogen, chloroformate, cynanide, cycloalkyl, cycloalkylamine, alkyl ether, isocyanate, and pentafluorobenzene. Examples of the allyl-derived ligand precursors have proved to be stable at room temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursors, including a Cu(hfac)(allyltrimethylsilane) precursor.
摘要翻译：已经提供了一种Cu（hfac）烯丙基衍生的配体前体。配体包括由烷基，苯基，三烷基硅烷，三烷氧基硅烷，卤代烷基硅烷，二卤代烷基硅烷，三卤硅烷，三苯基硅烷，烷氧基，卤素，氯甲酸酯，环己烷，环烷基，环烷基胺，烷基醚，异氰酸酯和五氟苯组成的组。已经证明烯丙基衍生的配体前体的实例在室温下是稳定的，并且在较高温度下具有足够的挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。已经提供了产生高产率的上述前体，包括Cu（hfac）（烯丙基三甲基硅烷）前体的合成方法。

2. 发明授权

US5994571A Substituted ethylene precursor and synthesis method 有权
标题翻译：取代乙烯前体及其合成方法
公开(公告)号：US5994571A
公开(公告)日：1999-11-30
申请号：US215921
申请日：1998-12-18
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David Russell Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David Russell Evans , Sheng Teng Hsu
IPC分类号： C07C11/04 , C07F1/08 , C07F1/10 , C07F15/00 , C23C16/18 , H01L21/285 , C23C16/00
CPC分类号： C23C16/18 , C07F1/08
摘要： A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, H, and C.sub.1 to C.sub.8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译：已经提供了具有取代的乙烯配体的Cu（hfac）前体。取代的乙烯配体包括与选自C1至C8烷基，C1至C8卤代烷基，H和C1至C8烷氧基的分子的键。一个变体，2-甲基-1-丁烯配体前体已被证明在室温下是稳定的，并且在较高温度下极易挥发。沉积有该前体的铜具有低电阻率和高粘合特性。由于挥发性，沉积有这种前体的铜的沉积速率非常高。已经提供了产生高产率的上述前体的合成方法。

3. 发明授权

US6090963A Alkene ligand precursor and synthesis method 有权
标题翻译：烯配体前体和合成方法
公开(公告)号：US6090963A
公开(公告)日：2000-07-18
申请号：US281722
申请日：1999-03-30
申请人： Wei-Wei Zhuang , Tue Nguyen , Robert Barrowcliff , David Russell Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Robert Barrowcliff , David Russell Evans , Sheng Teng Hsu
IPC分类号： C07C11/02 , C07C49/92 , C07F1/08 , C23C16/18
CPC分类号： C23C16/18
摘要： A metal(hfac), alkene ligand precursor has been provided. The alkene ligand includes double bonded carbon atoms, with first and second bonds to the first carbon atom, and third and fourth bonds to the second carbon atom. The first, second, third, and fourth bonds are selected from a the group consisting of H, C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, and C.sub.1 to C.sub.8 alkoxyl. As a general class, these precursors are capable of high metal deposition rates and high volatility, despite being stable in the liquid phase at low temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described alkene ligand class of metal precursors.
摘要翻译：已经提供了金属（hfac），烯烃配体前体。烯属配体包括双键键合的碳原子，与第一个碳原子具有第一个和第二个键，第三个和第四个键连接到第二个碳原子。第一，第二，第三和第四键选自H，C 1至C 8烷基，C 1至C 8卤代烷基和C 1至C 8烷氧基。作为一般类别，尽管在低温下在液相中稳定，但这些前体能够具有高的金属沉积速率和高挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。已经提供了产生上述烯属配体类金属前体的高产率的合成方法。

4. 发明授权

US06281377B1 Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films 有权
标题翻译：用于铜金属薄膜化学气相沉积的取代的环烯烃新铜前体
公开(公告)号：US06281377B1
公开(公告)日：2001-08-28
申请号：US09502425
申请日：2000-02-11
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07F1/08
摘要： A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of a volatile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m=1-6, and where R is a alkyl, such as methyl and ethyl.
摘要翻译：形成铜金属薄膜的化学气相沉积挥发性铜前体的方法包括形成化学式为（nRm-环己烯）Cu（I）（hfac）或（nRm-环戊烯）Cu（I）的挥发性液体，（hfac），其中n，m = 1-6，其中R是烷基，例如甲基和乙基。

5. 发明授权

US06669870B2 Substituted phenylethylene precursor synthesis method 失效
标题翻译：取代苯乙烯前体合成方法
公开(公告)号：US06669870B2
公开(公告)日：2003-12-30
申请号：US09820024
申请日：2001-03-28
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： H01B102
CPC分类号： C23C16/18
摘要： A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译：已经提供了具有取代的苯基乙炔配体的Cu（hfac）前体。取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。已经提供了产生高产率的上述前体的合成方法。

6. 发明授权

US06245261B1 Substituted phenylethylene precursor and synthesis method 有权
标题翻译：取代苯乙烯前体及其合成方法
公开(公告)号：US06245261B1
公开(公告)日：2001-06-12
申请号：US09210099
申请日：1998-12-11
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： H01B102
CPC分类号： C23C16/18
摘要： A Cub(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译：已经提供了具有取代的苯基乙炔配体的Cub（hfac）前体。取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。已经提供了产生高产率的上述前体的合成方法。

7. 发明授权

US6023102A Low resistance contact between circuit metal levels 失效
标题翻译：电路金属电平之间的低电阻接触
公开(公告)号：US6023102A
公开(公告)日：2000-02-08
申请号：US169084
申请日：1998-10-08
申请人： Tue Nguyen , Sheng Teng Hsu
发明人： Tue Nguyen , Sheng Teng Hsu
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L23/522 , H01L23/48
CPC分类号： H01L21/76844 , H01L21/76801 , H01L21/76807 , H01L21/76831 , H01L21/76865 , H01L23/5226 , H01L21/28568 , H01L21/76838 , H01L2924/0002 , H01L2924/3011
摘要： A method of forming a direct, copper-to-copper, connection between levels in an IC is disclosed. The method involves the IC processes of conformal deposition and anisotropic etching. A via interconnection is formed by isotropically depositing a barrier material in a via through an insulator to a lower copper level, and then anisotropically etching the via to remove the barrier material covering the lower copper level. The anisotropic etch leaves the barrier material lining the via through the insulator. The subsequently deposited upper metal level then directly contacts the lower copper level when the via is filled. A dual damascene interconnection is formed by anisotropically depositing a non-conductive barrier material in the trench bottom. Then a via is formed with a conductive barrier lining the via sidewalls. An IC via interconnection structure and a dual damascene interconnection structure, made in accordance with the above described methods, are also provided.
摘要翻译：公开了一种在IC中形成直接铜铜铜连接电平的方法。该方法涉及共形沉积和各向异性蚀刻的IC工艺。通过互连形成通过绝缘体将通孔绝缘体上的阻挡材料各向同性地沉积到较低的铜电平，然后各向异性地蚀刻通孔以除去覆盖较低铜层的阻挡材料。各向异性蚀刻离开通过绝缘体衬套通孔的阻挡材料。随后沉积的上层金属层，当通孔填充时，直接接触下铜层。通过在沟槽底部中各向异性地沉积非导电阻挡材料来形成双镶嵌互连。然后，通孔形成有衬套通孔侧壁的导电阻挡层。还提供了根据上述方法制造的通过互连结构和双镶嵌互连结构的IC。

8. 发明授权

US5939334A System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides 失效
标题翻译：选择性地清洗铜基板表面的系统和方法，原位去除铜氧化物
公开(公告)号：US5939334A
公开(公告)日：1999-08-17
申请号：US861808
申请日：1997-05-22
申请人： Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： C23F1/12 , C23G5/00 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/311 , H01L21/3213 , H01L21/768
CPC分类号： C23G5/00 , H01L21/02063 , H01L21/31111 , H01L21/31138 , H01L21/32134 , H01L21/76838 , H01L21/02068
摘要： A system and method of selectively etching copper surfaces free of copper oxides in preparation for the deposition of an interconnecting metallic material is provided. The method removes metal oxides with .beta.-diketones, such as Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively to copper oxides. The by-products of the cleaning process are likewise volatile for removal from the system with a vacuum pressure. Since the process is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in-situ cleaning process permits a minimum amount of copper oxide to reform before the deposition of the overlying interconnection metal. In this manner, a highly conductive electrical interconnection between the copper surface and the interconnecting metal material is formed. An IC having a metal interconnection, in which the underlying copper layer is cleaned of copper oxides, in-situ with Hhfac vapor, is also provided.
摘要翻译：提供了一种选择性地蚀刻不含铜氧化物的铜表面以准备沉积互连金属材料的系统和方法。该方法用β-二酮如Hhfac除去金属氧化物。 Hhfac以蒸气形式输送到系统中，几乎完全与铜氧化物反应。清洁过程的副产物同样是挥发性的，用于在真空压力下从系统中除去。由于该方法很容易适用于大多数IC工艺系统，所以它可以在无氧环境下进行，而不会从处理室中移除IC。在沉积互连金属之前，原位清洁工艺允许最小量的氧化铜重整。以这种方式，形成铜表面和互连金属材料之间的高导电性电互连。还提供了具有金属互连的IC，其中下面的铜层用Hhfac蒸气原位清除了铜氧化物。

9. 发明授权

US6043164A Method for transferring a multi-level photoresist pattern 失效
标题翻译：转印多层光刻胶图案的方法
公开(公告)号：US6043164A
公开(公告)日：2000-03-28
申请号：US665014
申请日：1996-06-10
申请人： Tue Nguyen , Sheng Teng Hsu , Jer-shen Maa , Bruce Dale Ulrich , Chien-Hsiung Peng
发明人： Tue Nguyen , Sheng Teng Hsu , Jer-shen Maa , Bruce Dale Ulrich , Chien-Hsiung Peng
IPC分类号： G03F7/36 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76807 , H01L21/76813 , H01L21/0274 , H01L21/0334 , H01L2221/1021
摘要： A method is provided for forming an intermediate level in an integrated circuit dielectric during a damascene process using a photoresist mask having an intermediate thickness. The method forms an interconnect to a first depth in the dielectric through an opening in the photoresist pattern. The photoresist profile is partially etched away in the area of the intermediate thickness to reveal a second dielectric surface area. The second dielectric surface area is then etched to a second depth less than the first depth. In this manner, vias can be formed to the first depth, and lines can be formed at a second depth to intersect the vias. The method of the present invention allows a dual damascene process to be performed with a single step of photoresist formation.
摘要翻译：提供一种用于在使用具有中间厚度的光致抗蚀剂掩模的镶嵌工艺期间在集成电路电介质中形成中间电平的方法。该方法通过光致抗蚀剂图案中的开口形成到电介质中的第一深度的互连。光致抗蚀剂轮廓在中间厚度的区域被部分地蚀刻掉以露出第二电介质表面积。然后将第二电介质表面积蚀刻到小于第一深度的第二深度。以这种方式，可以将通孔形成为第一深度，并且可以在第二深度处形成线以与通孔相交。本发明的方法允许通过单步形成光致抗蚀剂来进行双镶嵌工艺。

10. 发明授权

US5851367A Differential copper deposition on integrated circuit surfaces and method for same 失效
标题翻译：集成电路表面上的差分铜沉积及其相同的方法
公开(公告)号：US5851367A
公开(公告)日：1998-12-22
申请号：US731258
申请日：1996-10-11
申请人： Tue Nguyen , Lawrence J. Charneski , Sheng Teng Hsu
发明人： Tue Nguyen , Lawrence J. Charneski , Sheng Teng Hsu
IPC分类号： C23C16/02 , C23C16/04 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532 , H01L21/302
CPC分类号： C23C16/04 , C23C16/0245 , H01L21/28562 , H01L21/76801 , H01L21/76825 , H01L21/76838 , H01L23/53238 , H01L21/28568 , H01L2924/0002 , H01L2924/3011 , Y10S438/906 , Y10S438/974
摘要： A method for selectively applying CVD copper to metallic surfaces, that are co-located with non-metallic surfaces, is provided. The method prepares both the metal and non-metallic surfaces with a low energy ion etch of an inert gas through the use of an ion gun. The etching promotes the growth of copper on the metallic surface, and inhibits the growth on the non-metallic surface. Following an application of CVD copper, the surfaces are etched again to clean any residual copper from the non-metallic surface, and to again prepare the surfaces for another deposition of copper. Through repeated cycles of etching and copper deposition, the copper overlying the metallic surface is accumulated to achieve the desired thickness, while the non-metallic surface remains free of copper. A method is also provided for the selective deposition of copper on metallic surfaces to fill interconnects in damascene IC structures. An IC with a copper layer overlying a metallic surface, co-located with a non-metallic surface, where the copper layer is grown through repeated cycles of ion etching and copper deposition, is also provided.
摘要翻译：提供了一种用于将CVD铜选择性地应用于与非金属表面共位的金属表面的方法。该方法通过使用离子枪以惰性气体的低能量离子蚀刻来准备金属和非金属表面。蚀刻促进金属表面上的铜的生长，并且抑制非金属表面上的生长。在应用CVD铜之后，再次蚀刻表面以从非金属表面清除任何残留的铜，并再次准备用于另外沉积铜的表面。通过重复的蚀刻和铜沉积循环，覆盖金属表面的铜被积聚以达到所需的厚度，同时非金属表面保持不含铜。还提供了一种用于在金属表面上选择性沉积铜以填充镶嵌IC结构中的互连的方法。还提供了具有覆盖金属表面的铜层的IC，其与非金属表面共同定位，其中铜层通过重复的离子蚀刻和铜沉积循环而生长。

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