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    • 5. 发明申请
    • MEMRISTIVE DEVICE
    • 测量装置
    • US20110182107A1
    • 2011-07-28
    • US13119932
    • 2008-12-12
    • Wei WuJohn Paul StrachenR. Stanely WilliamsMarco FlorentinoShih-Yuan WangHans S. ChoJulien BorghettiSagi Varghese Mathai
    • Wei WuJohn Paul StrachenR. Stanely WilliamsMarco FlorentinoShih-Yuan WangHans S. ChoJulien BorghettiSagi Varghese Mathai
    • G11C11/00H01L45/00
    • H01L45/145H01L27/2472H01L45/08H01L45/1206H01L45/1226H01L45/14H01L45/146H01L45/147
    • A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).
    • 忆阻路由设备(200)包括忆阻矩阵(240),移动掺杂物(255)响应于编程电场而与忆阻矩阵(240)一起移动,并且在没有编程的情况下保持稳定在忆阻矩阵(240)内 电场; 以及围绕所述忆阻矩阵(240)的至少三个电极(210,220,230)。 一种利用忆阻器件(900)来调谐电路的方法包括测量电路特性(805)并将编程电压施加到忆阻器件(900),其使得忆阻器件(900)内的掺杂剂的运动改变电路特性 (805)。 提高忆阻装置(1300)的切换速度的方法包括将来自两个几何分离的位置的掺杂剂绘制成紧邻形成两个导电区域(1380,1390),然后通过应用将所述忆阻装置(1300)切换到导电状态 编程电压,其迅速地合并两个导电区域(1380,1390)以在源电极(1310)和漏电极(1320)之间形成导电通路。