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    • 1. 发明授权
    • MOS transistor with a controlled threshold voltage
    • 具有受控阈值电压的MOS晶体管
    • US06989569B1
    • 2006-01-24
    • US09389321
    • 1999-09-03
    • Toshiro HiramotoMakoto Takamiya
    • Toshiro HiramotoMakoto Takamiya
    • H01L29/78
    • H01L29/78609H01L29/783H01L29/78648
    • A MOS transistor with a controlled threshold voltage includes a SOI which includes a substrate composed of a semi-conducting material, a single crystal layer composed of a semi-conducting material and an insulating layer interposed between the substrate and the single crystal layer. The single crystal layer is formed therein with a source region, a drain region and a surrounded region surrounded by the source region and the drain region. The surrounded region includes a depletion layer having a composition surface which is in contact with the insulating layer. The MOS transistor comprises an EIB-MOS transistor of which the substrate is adapted to be applied with a voltage of a first polarity for inducing charges of a second polarity over the composition surface of the surrounded region.
    • 具有受控阈值电压的MOS晶体管包括SOI,其包括由半导体材料构成的衬底,由半导体材料构成的单晶层和插入在衬底和单晶层之间的绝缘层。 单晶层在其中形成有源极区域,漏极区域和由源极区域和漏极区域包围的被包围的区域。 被包围的区域包括具有与绝缘层接触的组成表面的耗尽层。 MOS晶体管包括EIB-MOS晶体管,其基板适于施加第一极性的电压,用于在所包围的区域的组成表面上诱导第二极性的电荷。
    • 2. 发明授权
    • Voltage detecting circuit
    • 电压检测电路
    • US09000751B2
    • 2015-04-07
    • US13396235
    • 2012-02-14
    • Po-Hung ChenMakoto TakamiyaTakayasu Sakurai
    • Po-Hung ChenMakoto TakamiyaTakayasu Sakurai
    • G01R1/30G01R19/165G01F3/20
    • G01R19/16519G01F3/20
    • In a voltage detecting circuit, a transistor is configured as a P-type MOSFET, and includes a source connected with an input terminal, a gate connected with a ground voltage terminal and a drain connected with an output terminal. A transistor is configured as a P-type MOSFET, and includes a gate and a source connected with the output terminal and a drain connected with the ground terminal. Gate width and gate length of the transistor and gate width and gate length of the transistor are adjusted so that source-drain current flowing between the source and the drain of the transistor becomes equal to source-drain current flowing between the source and the drain of the transistor when the voltage applied to the input terminal is set to be preset trigger voltage. This configuration accomplishes detecting that the input voltage exceeds the trigger voltage with simple configuration.
    • 在电压检测电路中,晶体管被配置为P型MOSFET,并且包括与输入端连接的源极,与接地电压端子连接的栅极和与输出端子连接的漏极。 晶体管被配置为P型MOSFET,并且包括与输出端连接的栅极和源极以及与接地端子连接的漏极。 调节晶体管的栅极宽度和栅极长度,并调整晶体管的栅极宽度和栅极长度,使得在晶体管的源极和漏极之间流动的源极 - 漏极电流变得等于在源极和漏极之间流动的源极 - 漏极电流 当施加到输入端子的电压被设置为预置触发电压时,晶体管。 该配置通过简单的配置实现了输入电压超过触发电压的检测。
    • 5. 发明申请
    • FOCUS DETECTION DEVICE AND IMAGING APPARATUS HAVING THE SAME
    • 聚焦检测装置及其成像装置
    • US20110025904A1
    • 2011-02-03
    • US12921466
    • 2009-03-06
    • Ichiro OnukiAkihiko NaganoMakoto Takamiya
    • Ichiro OnukiAkihiko NaganoMakoto Takamiya
    • H04N5/225
    • H04N5/23212G02B7/34G02B7/346G03B13/36H04N5/3696H04N2101/00
    • A focus detection device having imaging pixels and focus-detecting pixels using a phase-difference focus detection method implements high-precision focus detection. In the focus detection device, a plurality of pixels each having a photoelectric conversion unit for converting an incident light flux into signal charges, and a microlens having a focus position near the photoelectric conversion unit are arranged. The plurality of pixels include a plurality of imaging pixels for generating a shot image, and a plurality of focus-detecting pixels for generating an image signal for focus detection by the phase-difference focus detection method. An opening for giving a pupil division function to the focus-detecting pixel is formed using electrodes arranged to read out signal charges from the photoelectric conversion unit.
    • 具有成像像素和使用相位差焦点检测方法的聚焦检测像素的焦点检测装置实现高精度聚焦检测。 在焦点检测装置中,配置有具有用于将入射光束转换为信号电荷的光电转换单元的多个像素和具有靠近光电转换单元的聚焦位置的微透镜。 多个像素包括用于产生镜头图像的多个成像像素和用于通过相位差焦点检测方法生成用于焦点检测的图像信号的多个焦点检测像素。 使用用于从光电转换单元读出信号电荷的电极形成用于向焦点检测像素提供光瞳分割功能的开口。
    • 7. 发明授权
    • Apparatus having an afocal lens system used in optical measurement of
displacement
    • 具有用于位移光学测量的无焦点透镜系统的装置
    • US5926276A
    • 1999-07-20
    • US835462
    • 1997-04-08
    • Makoto TakamiyaShigeki Kato
    • Makoto TakamiyaShigeki Kato
    • G01B11/00G01P3/36G01P5/26G01S7/48G01S17/58G01B9/02
    • G01P5/26G01P3/366
    • An optical displacement measuring apparatus including an afocal optical system within a plane containing paths of at least two light beams. The afocal optical system includes a first lens optical unit and a second lens optical unit having a focal length which is greater than the focal length of the first lens optical unit. The distance between a diffraction grating and the first lens optical unit is smaller than the focal length of the first lens optical unit. The second lens optical unit is a combination of a lens with a negative refractive power and a lens with a positive refractive power. Accordingly, the optical displacement measuring apparatus performs accurate measurements with a large measurement depth, even for the cases where an afocal optical system is constructed within a plane containing the paths of the two light beams and the working distance is increased without increasing the size of an optical head.
    • 一种光学位移测量装置,包括在包含至少两个光束的路径的平面内的无焦光学系统。 无焦光学系统包括第一透镜光学单元和具有大于第一透镜光学单元的焦距的焦距的第二透镜光学单元。 衍射光栅与第一透镜光学单元之间的距离小于第一透镜光学单元的焦距。 第二透镜光学单元是具有负屈光力的透镜和具有正折光力的透镜的组合。 因此,即使在包含两个光束的路径的平面内构造无焦光学系统的情况下,光学位移测量装置也能够进行具有大测量深度的精确测量,并且增加工作距离而不增加尺寸 光头。