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    • 1. 发明授权
    • Non-volatile memory device
    • 非易失性存储器件
    • US07511981B2
    • 2009-03-31
    • US11876607
    • 2007-10-22
    • Hideo AsanoKoji KitamuraHisatada MiyatakeKohki NodaToshio SunagaHiroshi Umezaki
    • Hideo AsanoKoji KitamuraHisatada MiyatakeKohki NodaToshio SunagaHiroshi Umezaki
    • G11C5/08
    • G11C11/16
    • A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interconnect line extending in a first direction of the memory array and functioning as a gate electrode of a selection transistor included in each memory cell; a second interconnect line extending in the first direction of the memory array; a third interconnect line extending in a second direction; wherein the magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines, wherein the second interconnect line extends at least partially along all magneto resistive elements in a particular one of the memory cells.
    • 根据一个实施例的非易失性存储器件包括多个存储单元,每个存储单元包括磁阻元件和选择晶体管; 其中所述存储器单元中的至少一些被布置成二维阵列; 第一互连线,沿着所述存储器阵列的第一方向延伸并且用作包含在每个存储单元中的选择晶体管的栅电极; 在存储器阵列的第一方向上延伸的第二互连线; 第三互连线,沿第二方向延伸; 其中所述存储器单元中的至少一些的所述磁阻元件夹在所述第二和第三互连线之间,其中所述第二互连线至少部分地沿着所述存储器单元中的特定一个的所有磁阻元件延伸。
    • 2. 发明申请
    • NON-VOLATILE MEMORY DEVICE
    • 非易失性存储器件
    • US20080094882A1
    • 2008-04-24
    • US11876607
    • 2007-10-22
    • Hideo AsanoKoji KitamuraHisatada MiyatakeKohki NodaToshio SunagaHiroshi Umezaki
    • Hideo AsanoKoji KitamuraHisatada MiyatakeKohki NodaToshio SunagaHiroshi Umezaki
    • G11C11/00
    • G11C11/16
    • A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interconnect line extending in a first direction of the memory array and functioning as a gate electrode of a selection transistor included in each memory cell; a second interconnect line extending in the first direction of the memory array; a third interconnect line extending in a second direction; wherein the magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines, wherein the second interconnect line extends at least partially along all magneto resistive elements in a particular one of the memory cells.
    • 根据一个实施例的非易失性存储器件包括多个存储单元,每个存储单元包括磁阻元件和选择晶体管; 其中所述存储器单元中的至少一些被布置成二维阵列; 第一互连线,沿着所述存储器阵列的第一方向延伸并且用作包含在每个存储单元中的选择晶体管的栅电极; 在存储器阵列的第一方向上延伸的第二互连线; 第三互连线,沿第二方向延伸; 其中所述存储器单元中的至少一些的所述磁阻元件夹在所述第二和第三互连线之间,其中所述第二互连线至少部分地沿着所述存储器单元中的特定一个的所有磁阻元件延伸。
    • 8. 发明授权
    • Non-volatile memory device
    • 非易失性存储器件
    • US07123498B2
    • 2006-10-17
    • US10964352
    • 2004-10-12
    • Hisatada MiyatakeKohki NodaToshio SunagaHiroshi UmezakiHideo AsanoKoji Kitamura
    • Hisatada MiyatakeKohki NodaToshio SunagaHiroshi UmezakiHideo AsanoKoji Kitamura
    • G11C5/06
    • G11C11/16
    • MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write/read bit line BLW/R and the ground.
    • MRAM具有在y方向上延伸的字线WLR和写入字线WLW,在x方向上延伸的写入/读取位线BLW / R和写入位线BLW,以及设置在这些交点处的存储单元MC 线条。 存储器MC包括子单元SC 1和SC 2。 子单元SC1包括磁电阻元件MTJ 1和MTJ 2以及选择晶体管Tr 1,子单元SC 2包括磁阻元件MTJ 3和MTJ 4以及选择晶体管Tr 2。 磁电阻元件MTJ 1和MTJ 2并联连接,磁电阻元件MTJ 3和MTJ 4也并联连接。 此外,子单元SC 1和SC 2串联连接在写/读位线BLW / R和地之间。
    • 10. 发明授权
    • Magnetic memory and method for optimizing write current in a magnetic memory
    • 磁存储器和用于优化磁存储器中的写入电流的方法
    • US06992924B2
    • 2006-01-31
    • US10680051
    • 2003-10-07
    • Hisatada MiyatakeHiroshi UmezakiKohji KitamuraToshio SunagaKohki NodaHideo Asano
    • Hisatada MiyatakeHiroshi UmezakiKohji KitamuraToshio SunagaKohki NodaHideo Asano
    • G11C11/15
    • G11C11/16G11C29/02G11C29/028G11C2029/5006
    • The invention provides methods and apparatus for for determining and providing optimum write bit line current and write word line current in an MRAM. A single reference potential is used to determine the values of the write line current and the bit line current. In determining the optimal values, asteroid curves representing bit line magnetic fields Hx generated by write bit line current IB and word line magnetic fields Hy generated by write word line current Iw for magnetization are considered, and an asteroid curve ACout is defined outside the asteroid curves of all memory cells taking manufacture variations and design margins into account. A write bit line current and a write word line current are selected such that the write current obtained by adding the write bit line current or currents and the write word line current, or the write power consumed by the bit line or lines and the write word line is minimized. Furthermore, in order to prevent multi-selection, the write bit line current and the write word line current are selected so that they generate a synthetic magnetic field on the curve between calculated points of the asteroid curve ACout.
    • 本发明提供了用于在MRAM中确定和提供最佳写入位线电流和写入字线电流的方法和装置。 单个参考电位用于确定写入线电流和位线电流的值。 在确定最佳值时,表示通过写入位线电流I B和字线磁场H SUB生成的位线磁场H 的小行星曲线 考虑了用于磁化的写入字线电流I 产生的小行星曲线AC< SUB>被定义在所有存储器单元的小行星曲线之外,其采取制造变化和设计余量 考虑到 选择写位线电流和写字线电流,使得通过将写位线电流或电流和写字线电流相加而获得的写入电流或由位线或线消耗的写入功率和写入字 线最小化。 此外,为了防止多次选择,选择写入位线电流和写入字线电流,使得它们在小行星曲线AC的计算点之间的曲线上产生合成磁场, 。