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1. 发明授权

US08116618B2 Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices 有权
标题翻译：加热装置，基板处理装置以及半导体装置的制造方法
公开(公告)号：US08116618B2
公开(公告)日：2012-02-14
申请号：US12213823
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： A45D20/40 , A21B2/00
CPC分类号： H01L21/67109 , H01L21/67115
摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.
摘要翻译：加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。而且，移动单元连接到每个反射构件的一端以移动反射构件。此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。

2. 发明申请

US20090016706A1 Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices 有权
标题翻译：加热装置，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20090016706A1
公开(公告)日：2009-01-15
申请号：US12213823
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： F26B3/28
CPC分类号： H01L21/67109 , H01L21/67115
摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.
摘要翻译：加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。而且，移动单元连接到每个反射构件的一端以移动反射构件。此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。

3. 发明授权

US09184069B2 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator 有权
公开(公告)号：US09184069B2
公开(公告)日：2015-11-10
申请号：US12213824
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306 , H01L21/67 , H01L21/66 , H01L21/673
CPC分类号： H01L21/67109 , H01L21/67248 , H01L21/67303 , H01L22/12 , Y10T29/41
摘要： A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

4. 发明授权

US07863204B2 Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure 有权
标题翻译：基板处理装置，使用该加热装置的加热装置，利用这些装置制造半导体的方法和加热元件支撑结构
公开(公告)号：US07863204B2
公开(公告)日：2011-01-04
申请号：US11990519
申请日：2006-08-23
申请人： Toshimitsu Miyata , Akira Hayashida , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka
发明人： Toshimitsu Miyata , Akira Hayashida , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L21/67109
摘要： A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and the enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.
摘要翻译：一种基板处理装置，包括用于存储和处理基板的处理室和具有加热元件和隔热件的加热装置，并且通过加热元件加热处理室中的基板。加热元件形成为只有其一端由保持部保持，并且在加热元件的中间部分处突出到处理室侧并且位于加热元件附近或与加热元件接触的突起处形成在隔热材料。具有放大部分的销通过加热元件并且在加热元件的中间部分处的隔热件并且扩大部分位于加热元件附近或与加热元件接触。多个突起可以形成在绝热体上，并且销可以设置在这些多个突起之间。

5. 发明申请

US20090035948A1 Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure 有权
标题翻译：基板处理装置，使用该加热装置的加热装置，利用这些装置制造半导体的方法和加热元件支撑结构
公开(公告)号：US20090035948A1
公开(公告)日：2009-02-05
申请号：US11990519
申请日：2006-08-23
申请人： Toshimitsu Miyata , Akira Hayashida , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka
发明人： Toshimitsu Miyata , Akira Hayashida , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka
IPC分类号： H01L21/31 , A21B1/00
CPC分类号： H01L21/67109
摘要： A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and The enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.
摘要翻译：一种基板处理装置，包括用于存储和处理基板的处理室和具有加热元件和隔热件的加热装置，并且通过加热元件加热处理室中的基板。加热元件形成为只有其一端由保持部保持，并且在加热元件的中间部分处突出到处理室侧并且位于加热元件附近或与加热元件接触的突起处形成在隔热材料。具有放大部分的销通过加热元件和加热元件的中间部分处的隔热件，并且扩大部分位于加热元件附近或与加热元件接触。多个突起可以形成在绝热体上，并且销可以设置在这些多个突起之间。

6. 发明申请

US20090014435A1 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator 有权
标题翻译：加热装置，采用该加热装置的基板处理装置，制造半导体装置的方法和绝缘体
公开(公告)号：US20090014435A1
公开(公告)日：2009-01-15
申请号：US12213824
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： H05B3/06 , H01L21/00 , H05B3/02
CPC分类号： H01L21/67109 , H01L21/67248 , H01L21/67303 , H01L22/12 , Y10T29/41
摘要： A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.
摘要翻译：一种加热装置，包括加热元件，用于支撑加热元件的内壳，沿着内壳的外边界设置的外壳，用于在内壳和外壳之间输送冷却介质的冷却介质通道，第一设置在所述内壳中的开口，设置在所述外壳中的第二开口和布置成从所述第一开口延伸到所述第二开口的隔板，用于至少展开与所述冷却介质通道分离的空间以及在所述内壳和所述外壳之间的至少一个空间贝壳。加热装置还包括用于关闭设置在隔板和第二开口之间的间隙的绝缘体。

7. 发明授权

US08197638B2 Semiconductor manufacturing device and method for manufacturing semiconductor devices 有权
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US08197638B2
公开(公告)日：2012-06-12
申请号：US10589490
申请日：2005-03-04
申请人： Mitsunori Ishisaka , Toshimitsu Miyata
发明人： Mitsunori Ishisaka , Toshimitsu Miyata
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01L21/67103 , H01J37/32082 , H01J37/32532 , H01L21/67069 , H01L21/6833 , Y10T279/23
摘要： Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main body 41 of the susceptor 40 of an MMT apparatus is composed of a heater arranging plate 42, an electrode arranging plate 48, and a supporting plate 56 all made from quartz. A circular electrode arranging hole 49 with a fixed depth is concentrically formed on the upper surface of the electrode arranging plate 48, and quadrangular pillars 50 are formed protruding in a matrix on the bottom of the electrode arranging hole 49. Multiple insertion holes 52 are formed in a disk-shaped high-frequency electrode 51, and the high-frequency electrode 51 is installed in the electrode arranging hole 49 by inserting each pillar 50 into each insertion hole 52. The gaps Sa and Sb are provided between the high-frequency electrode 51 and the electrode arranging plate 48. The pillar 50 boosts the strength of the electrode arranging plate 48. Damage to the high-frequency electrode is prevented even if the thermal expansion coefficient of the high-frequency electrode is larger than that of the electrode arranging plate, since the gaps absorb the thermal expansion differential.
摘要翻译：防止晶片污染，同时防止损坏高频电极和基座。 MMT装置的基座40的主体41由加热器布置板42，电极布置板48和全部由石英制成的支撑板56组成。在电极配置板48的上表面同心地形成有固定深度的圆形电极布置孔49，并且在电极布置孔49的底部以矩阵形式形成四边形柱50，形成多个插入孔52 在盘形高频电极51中，并且通过将每个支柱50插入每个插入孔52中而将高频电极51安装在电极布置孔49中。间隙Sa和Sb设置在高频电极 51和电极配置板48.支柱50提高电极排列板48的强度。即使高频电极的热膨胀系数大于电极排列的热膨胀系数，也防止了高频电极的损坏因为间隙吸收热膨胀差。

8. 发明授权

US06514869B2 Method for use in manufacturing a semiconductor device 有权
标题翻译：用于制造半导体器件的方法
公开(公告)号：US06514869B2
公开(公告)日：2003-02-04
申请号：US09924538
申请日：2001-08-09
申请人： Tetsuya Wada , Toshimitsu Miyata , Eisuke Nishitani
发明人： Tetsuya Wada , Toshimitsu Miyata , Eisuke Nishitani
IPC分类号： H01L21311
CPC分类号： C23C16/45565 , C23C16/40 , C23C16/4408 , C23C16/4557 , C23C16/46 , H01L21/67109
摘要： In a semiconductor device manufacturing method for processing a plurality of substrates by alternately repeating a pretreatment stage and a continuous substrate processing stage, the continuous substrate processing stage comprises the steps of: loading a substrate on a heater unit located at a substrate loading/unloading position, the heater unit supporting and heating the substrate; processing the loaded substrate after transferring the heater unit having thereon the loaded substrate to a substrate processing position; unloading the processed substrate; and repeating the loading step, the processing step and the unloading step until a set of substrates are processed, and wherein the pretreatment stage is carried out by maintaining the heater unit between the substrate loading/unloading position and the substrate processing position.
摘要翻译：在通过交替重复预处理阶段和连续衬底处理阶段来处理多个衬底的半导体器件制造方法中，连续衬底处理阶段包括以下步骤：将衬底加载在位于衬底装载/卸载位置的加热器单元所述加热器单元支撑并加热所述基板; 在将其上装载有衬底的加热器单元传送到衬底处理位置之后处理加载的衬底; 卸载经处理的基板; 并且重复加载步骤，处理步骤和卸载步骤直到处理一组基板，并且其中通过将加热器单元保持在基板装载/卸载位置和基板处理位置之间来执行预处理阶段。

9. 发明授权

US08906161B2 Semiconductor producing device and semiconductor device producing method 有权
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US08906161B2
公开(公告)日：2014-12-09
申请号：US12458096
申请日：2009-06-30
申请人： Katsuhisa Kasanami , Toshimitsu Miyata , Mitsunori Ishisaka
发明人： Katsuhisa Kasanami , Toshimitsu Miyata , Mitsunori Ishisaka
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H01L21/67
CPC分类号： H01L21/67103 , H01J37/32082 , H01J2237/2001 , Y10T279/23
摘要： A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.
摘要翻译：管状电极（215）和管状磁体（216）安装在用于MMT装置的加工炉（202）的外部。用于保持晶片（200）的感受器（217）安装在处理炉的处理室（201）内。用于将晶片输入和离开处理室的闸阀（244）; 和用于将淋浴中的处理气体喷射到晶片上的喷头（236）安装在处理炉内。高频电极（2）和加热器（3）安装在基座（217）的内部，它们之间的间隙和形成空间的壁之间。即使在高频电极，加热器和基座之间发生热膨胀差，在形成基座和高频电极和加热器之间的空间的壁之间形成的间隙也防止对高频电极和加热器的损坏。

10. 发明申请

US20080223524A1 Semiconductor producing device and semiconductor device producing method 有权
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US20080223524A1
公开(公告)日：2008-09-18
申请号：US12153101
申请日：2008-05-14
申请人： Katsuhisa Kasanami , Toshimitsu Miyata , Mitsunori Ishisaka
发明人： Katsuhisa Kasanami , Toshimitsu Miyata , Mitsunori Ishisaka
IPC分类号： H01L21/3065 , C23C16/452 , B01J19/12
CPC分类号： H01L21/67103 , H01J37/32082 , H01J2237/2001 , Y10T279/23
摘要： A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.
摘要翻译：管状电极（215）和管状磁体（216）安装在用于MMT装置的加工炉（202）的外部。用于保持晶片（200）的感受器（217）安装在处理炉的处理室（201）内部。用于将晶片输入和离开处理室的闸阀（244）; 和用于将淋浴中的处理气体喷射到晶片上的喷头（236）安装在处理炉内。高频电极（2）和加热器（3）安装在基座（217）的内部，它们之间的间隙和形成空间的壁之间。即使在高频电极，加热器和基座之间发生热膨胀差，在形成基座和高频电极和加热器之间的空间的壁之间形成的间隙也防止对高频电极和加热器的损坏。

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