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1. 发明授权

US09431545B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09431545B2
公开(公告)日：2016-08-30
申请号：US13604962
申请日：2012-09-06
申请人： Toshihiko Saito , Atsuo Isobe , Kazuya Hanaoka , Junichi Koezuka , Shinya Sasagawa , Motomu Kurata , Akihiro Ishizuka
发明人： Toshihiko Saito , Atsuo Isobe , Kazuya Hanaoka , Junichi Koezuka , Shinya Sasagawa , Motomu Kurata , Akihiro Ishizuka
IPC分类号： H01L29/786 , H01L21/28 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A miniaturized transistor having high electric characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity are achieved. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, source and drain electrode layers are provided in contact with the oxide semiconductor film and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive film and an interlayer insulating film are stacked to cover the oxide semiconductor film, the sidewall insulating layers, and the gate electrode layer, and the interlayer insulating film and the conductive film over the gate electrode layer are removed by a chemical mechanical polishing method, so that the source and drain electrode layers are formed.
摘要翻译：提供具有高电特性的小型化晶体管，其产率高。在包括晶体管的半导体器件中，实现了高性能，高可靠性和高生产率。在包括晶体管的半导体器件中，依次堆叠其中设置有侧壁绝缘层的侧表面上的氧化物半导体膜，栅极绝缘膜和栅极电极层的晶体管，源极和漏极电极层被设置为与氧化物半导体膜和侧壁绝缘层。在制造半导体器件的过程中，层叠导电膜和层间绝缘膜以覆盖氧化物半导体膜，侧壁绝缘层和栅极电极层，以及栅极上的层间绝缘膜和导电膜通过化学机械抛光方法去除层，从而形成源极和漏极电极层。

2. 发明授权

US08809992B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08809992B2
公开(公告)日：2014-08-19
申请号：US13356012
申请日：2012-01-23
申请人： Shunpei Yamazaki , Atsuo Isobe , Toshihiko Saito , Takehisa Hatano , Hideomi Suzawa , Shinya Sasagawa , Junichi Koezuka , Yuichi Sato , Shinji Ohno
发明人： Shunpei Yamazaki , Atsuo Isobe , Toshihiko Saito , Takehisa Hatano , Hideomi Suzawa , Shinya Sasagawa , Junichi Koezuka , Yuichi Sato , Shinji Ohno
IPC分类号： H01L29/786
CPC分类号： H01L29/66969 , H01L21/02488 , H01L21/02565 , H01L27/1225 , H01L29/786 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
摘要翻译：提供了包括氧化物半导体并且具有良好的电特性的半导体器件。在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。氧化物半导体膜的侧面与绝缘膜接触。氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。栅极绝缘膜与氧化物半导体膜形成并接触。在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

3. 发明授权

US08841675B2 Minute transistor 有权
标题翻译：分钟晶体管
公开(公告)号：US08841675B2
公开(公告)日：2014-09-23
申请号：US13609931
申请日：2012-09-11
申请人： Toshihiko Saito , Atsuo Isobe , Kazuya Hanaoka , Sho Nagamatsu
发明人： Toshihiko Saito , Atsuo Isobe , Kazuya Hanaoka , Sho Nagamatsu
IPC分类号： H01L29/10 , H01L29/76 , H01L27/108 , H01L29/04 , H01L27/12 , H01L29/786 , H01L29/78
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/44 , H01L21/463 , H01L21/465 , H01L27/1225 , H01L27/14632 , H01L27/14687 , H01L29/04 , H01L29/78 , H01L29/7869
摘要： A minute transistor and the method of manufacturing the minute transistor. A source electrode layer and a drain electrode layer are each formed in a corresponding opening formed in an insulating layer covering a semiconductor layer. The opening of the source electrode layer and the opening of the drain electrode layer are formed separately in two distinct steps. The source electrode layer and the drain electrode layer are formed by depositing a conductive layer over the insulating layer and in the openings, and subsequently removing the part located over the insulating layer by polishing. This manufacturing method allows for the source electrode later and the drain electrode layer to be formed close to each other and close to a channel forming region of the semiconductor layer. Such a structure leads to a transistor having high electrical characteristics and a high manufacturing yield even in the case of a minute structure.
摘要翻译：一分钟晶体管和微晶体管的制造方法。源极电极层和漏极电极层各自形成在形成在覆盖半导体层的绝缘层中的对应的开口中。源电极层的开口和漏电极层的开口分开形成两个不同的步骤。源极电极层和漏电极层通过在绝缘层上和开口中沉积导电层而形成，然后通过抛光去除位于绝缘层之上的部分。该制造方法允许稍后的源极电极和漏极电极层彼此靠近并且靠近半导体层的沟道形成区域。这种结构导致即使在微小结构的情况下也具有高电特性和高制造成品率的晶体管。

4. 发明授权

US07541228B2 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
标题翻译：半导体装置及其制造方法及其设计方法
公开(公告)号：US07541228B2
公开(公告)日：2009-06-02
申请号：US12003983
申请日：2008-01-04
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/8234 , H01L21/302
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
摘要翻译：本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。本发明的另一个目的是提供一种指定半导体器件的方法。本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

5. 发明授权

US08766255B2 Oxide semiconductor device including gate trench and isolation trench 有权
标题翻译：氧化物半导体器件包括栅极沟槽和隔离沟槽
公开(公告)号：US08766255B2
公开(公告)日：2014-07-01
申请号：US13418558
申请日：2012-03-13
申请人： Atsuo Isobe , Toshihiko Saito , Kiyoshi Kato
发明人： Atsuo Isobe , Toshihiko Saito , Kiyoshi Kato
IPC分类号： H01L29/786
CPC分类号： H01L27/1156 , H01L21/76232 , H01L27/1225 , H01L29/4236
摘要： A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.
摘要翻译：一种其中可以实现保持存储数据的性质的改进的半导体器件。此外，半导体器件的功耗降低。使用能够充分降低沟道形成区域中的晶体管（例如，氧化物半导体材料）的截止电流的宽间隙半导体材料的晶体管，其具有沟槽结构，即，沟槽结构栅电极和用于元件隔离的沟槽。使用能够充分降低晶体管的截止电流的半导体材料能够长时间保持数据。此外，由于晶体管具有用于栅极电极的沟槽，所以即使当源电极和漏电极之间的距离减小时，也可以通过适当地设置沟槽的深度来抑制短沟道效应的发生。

6. 发明申请

US20120235150A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120235150A1
公开(公告)日：2012-09-20
申请号：US13418558
申请日：2012-03-13
申请人： Atsuo Isobe , Toshihiko Saito , Kiyoshi Kato
发明人： Atsuo Isobe , Toshihiko Saito , Kiyoshi Kato
IPC分类号： H01L29/786 , H01L27/108 , H01L29/04
CPC分类号： H01L27/1156 , H01L21/76232 , H01L27/1225 , H01L29/4236
摘要： A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.
摘要翻译：一种其中可以实现保持存储数据的性质的改进的半导体器件。此外，半导体器件的功耗降低。使用能够充分降低沟道形成区域中的晶体管（例如，氧化物半导体材料）的截止电流的宽间隙半导体材料的晶体管，其具有沟槽结构，即，沟槽结构栅电极和用于元件隔离的沟槽。使用能够充分降低晶体管的截止电流的半导体材料能够长时间保持数据。此外，由于晶体管具有用于栅极电极的沟槽，所以即使当源电极和漏电极之间的距离减小时，也可以通过适当地设置沟槽的深度来抑制短沟道效应的发生。

7. 发明授权

US07344925B2 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
标题翻译：半导体装置及其制造方法及其设计方法
公开(公告)号：US07344925B2
公开(公告)日：2008-03-18
申请号：US11064820
申请日：2005-02-25
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/8234 , H01L21/331
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
摘要翻译：本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。本发明的另一个目的是提供一种指定半导体器件的方法。本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

8. 发明授权

US08809853B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08809853B2
公开(公告)日：2014-08-19
申请号：US13409316
申请日：2012-03-01
申请人： Toshihiko Saito , Kiyoshi Kato , Atsuo Isobe
发明人： Toshihiko Saito , Kiyoshi Kato , Atsuo Isobe
IPC分类号： H01L29/78 , H01L29/772
CPC分类号： H01L27/0688 , G11C16/0433 , H01L21/02565 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L29/408 , H01L29/4236 , H01L29/78 , H01L29/7869 , H01L29/78696
摘要： With a combination of a transistor including an oxide semiconductor material and a transistor including a semiconductor material other than an oxide semiconductor, a semiconductor device with a novel structure in which data can be retained for a long time and does not have a limitation on the number of writing can be obtained. When a connection electrode for connecting the transistor including a semiconductor material other than an oxide semiconductor to the transistor including an oxide semiconductor material is smaller than an electrode of the transistor including a semiconductor material other than an oxide semiconductor that is connected to the connection electrode, the semiconductor device with a novel structure can be highly integrated and the storage capacity per unit area can be increased.
摘要翻译：通过包括氧化物半导体材料的晶体管和包括除了氧化物半导体之外的半导体材料的晶体管的组合，具有可以长时间保持数据并且对数字没有限制的新颖结构的半导体器件的写作可以获得。当用于将包括氧化物半导体的半导体材料的晶体管连接到包括氧化物半导体材料的晶体管的连接电极小于包含与连接电极连接的氧化物半导体以外的半导体材料的晶体管的电极时，具有新颖结构的半导体器件可以高度集成，并且可以增加每单位面积的存储容量。

9. 发明申请

US20050158936A1 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
公开(公告)号：US20050158936A1
公开(公告)日：2005-07-21
申请号：US11064820
申请日：2005-02-25
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/8234
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

10. 发明申请

US20080138943A1 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
公开(公告)号：US20080138943A1
公开(公告)日：2008-06-12
申请号：US12003983
申请日：2008-01-04
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

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