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1. 发明授权

US5919522A Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
标题翻译：使用多胺类前体生长BaSrTiO3
公开(公告)号：US5919522A
公开(公告)日：1999-07-06
申请号：US835768
申请日：1997-04-08
申请人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
发明人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
IPC分类号： C07C49/12 , C07C211/14 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/18 , C23C16/40 , C23C16/409 , C23C16/4481
摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.
摘要翻译：一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。

2. 发明授权

US6015917A Tantalum amide precursors for deposition of tantalum nitride on a substrate 失效
标题翻译：用于在衬底上沉积氮化钽的钽酰胺前体
公开(公告)号：US6015917A
公开(公告)日：2000-01-18
申请号：US12679
申请日：1998-01-23
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： C07F9/00 , C23C14/06 , C23C14/48 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/02 , C30B25/10 , C07F7/28 , C07F19/00
CPC分类号： C30B25/02 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/105 , C30B29/38
摘要： Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microlectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.
摘要翻译：描述了钽和钛源试剂，包括用于通过诸如化学气相沉积，辅助化学气相沉积，离子注入，分子束外延和快速热处理的方法在衬底上沉积氮化钽材料的钽酰胺和钽氮化硅前体。可以使用前体在微电子器件结构上形成扩散阻挡层，使得能够在器件结构中使用铜金属化和铁电薄膜。

3. 发明授权

US6005127A Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films 失效
标题翻译：用于Sb离子注入和形成锑化物薄膜的锑/路易斯碱加合物
公开(公告)号：US6005127A
公开(公告)日：1999-12-21
申请号：US977507
申请日：1997-11-24
申请人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
发明人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
IPC分类号： C07F9/90 , C23C16/18 , C30B31/22 , C07F9/70
CPC分类号： C23C16/18 , C07F9/904 , C07F9/908 , C30B31/22
摘要： An antimony/Lewis base adduct of the formula SbR.sub.3.L, wherein each R is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 perfluoroalkyl, C.sub.1 -C.sub.8 haloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.6 -C.sub.10 perfluoroaryl, C.sub.6 -C.sub.10 haloaryl, C.sub.6 -C.sub.10 cycloalkyl, substituted C.sub.6 -C.sub.10 aryl and halo; and L is a Lewis base ligand coordinating with SbR.sub.3. The adducts of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing, to form antimony or antimony-containing films.
摘要翻译：式SbR3.L的锑/路易斯碱加成物，其中每个R独立地选自C 1 -C 8烷基，C 1 -C 8全氟烷基，C 1 -C 8卤代烷基，C 6 -C 10芳基，C 6 -C 10全氟芳基，C 6 -C 10卤代芳基， C 6 -C 10环烷基，取代的C 6 -C 10芳基和卤素; L是与SbR 3配位的路易斯碱配位体。本发明的加成物可用作化学气相沉积，辅助化学气相沉积（例如激光辅助化学气相沉积，光辅助化学气相沉积，等离子体辅助化学气相沉积和离子辅助化学气相沉积），离子注入，分子束外延和快速热处理，以形成含锑或锑的膜。

4. 发明授权

US06822107B1 Chemical vapor deposition precursors for deposition of copper 失效
标题翻译：用于沉积铜的化学气相沉积前体
公开(公告)号：US06822107B1
公开(公告)日：2004-11-23
申请号：US10643272
申请日：2003-08-19
申请人： Thomas H. Baum , Gautam Bhandari , Chongying Xu
发明人： Thomas H. Baum , Gautam Bhandari , Chongying Xu
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07C229/76 , C07C2601/18
摘要： Copper precursors of the formula (I): wherein: Cu is Cu(I) or Cu(II); x is an integer having a value of from 0 to 4; each of R, R′ and R″ may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C6 alky), C1-C6 perfluoroalkyl and C6-C10 aryl; when Cu is Cu(I), A is a Lewis base; when Cu is Cu(II), A is: wherein x, R, R′ and R″ are as specified above.
摘要翻译：式（I）的铜前体：其中：Cu是Cu（I）或Cu（II）; x是0至4的整数; R，R'和R“可以相同各自独立地选自H，C 1 -C 6烷基），C 1 -C 6全氟烷基和C 6 -C 10芳基;当Cu是Cu（I）时，A是路易斯碱;当Cu 是Cu（II），A是：其中x，R，R'和R“如上所述。

5. 发明授权

US5859274A Anhydrous mononuclear tris(.beta.-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same 失效
标题翻译：用于沉积含铋膜的无水单核三（β-二酮）铋组合物及其制备方法
公开(公告)号：US5859274A
公开(公告)日：1999-01-12
申请号：US960915
申请日：1997-10-30
申请人： Thomas H. Baum , Gautam Bhandari , Margaret Chappuis
发明人： Thomas H. Baum , Gautam Bhandari , Margaret Chappuis
IPC分类号： C07F9/94
CPC分类号： C07F9/94
摘要： Anhydrous mononuclear tris(.beta.-diketonato)bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris(.beta.-diketonato)bismuth complexes of the prior art.
摘要翻译：与从双核三（β-二酮）衍生的薄膜获得的薄膜相比，无水单核三（β-二酮）铋络合物可用作铋的化学气相沉积的前体，用于生产显着改善的化学计量，形态和功能特征的含Bi薄膜，现有技术的铋络合物。

6. 发明授权

US6102993A Copper precursor composition and process for manufacture of microelectronic device structures 失效
标题翻译：铜前体组合物和微电子器件结构的制造方法
公开(公告)号：US6102993A
公开(公告)日：2000-08-15
申请号：US365913
申请日：1999-08-03
申请人： Gautam Bhandari , Thomas H. Baum , Chongying Xu
发明人： Gautam Bhandari , Thomas H. Baum , Chongying Xu
IPC分类号： C07C49/92 , C07F1/00 , C07F1/08 , C07F7/08 , C23C16/18 , H01L21/28 , H01L21/285 , C09K3/00 , B05D5/12
CPC分类号： H01L21/28556 , C07F1/005 , C07F1/08 , C07F7/082 , C23C16/18
摘要： Copper precursor formulations, including a copper precursor with at least one of (a) water, (b) a water precursor and (c) a non-ligand organic hydrate, are useful in CVD processes, e.g., in liquid delivery chemical vapor deposition, for forming a copper-containing material on a substrate. The disclosed copper precursor formulations are particularly useful in the formation of copper layers in semiconductor integrated circuits, e.g., for metallization of interconnections in such semiconductor device structures.
摘要翻译：包括具有（a）水，（b）水前体和（c）非配体有机水合物中的至少一种的铜前体的铜前体制剂可用于CVD工艺，例如在液体输送化学气相沉积中，用于在基底上形成含铜材料。所公开的铜前体配方在半导体集成电路中形成铜层特别有用，例如用于在这种半导体器件结构中互连的金属化。

7. 发明授权

US5902639A Method of forming bismuth-containing films by using bismuth amide compounds 失效
标题翻译：通过使用铋酰胺化合物形成含铋膜的方法
公开(公告)号：US5902639A
公开(公告)日：1999-05-11
申请号：US828566
申请日：1997-03-31
申请人： Timothy E. Glassman , Gautam Bhandari , Thomas H. Baum
发明人： Timothy E. Glassman , Gautam Bhandari , Thomas H. Baum
IPC分类号： C07F9/94 , C23C16/40 , G02F1/00 , G02F1/05 , C23C16/00
CPC分类号： G02F1/0027 , C07F9/94 , C23C16/40 , C23C16/407 , G02F1/0541 , G02F2203/12
摘要： A method of forming a bismuth-containing material layer on a substrate, comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor, to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL.sup.1.sub.x L.sup.2.sub.y (NR.sup.1 R.sub.2).sub.z wherein: z is an integer of from 1 to 3; x+y+z=3; each of L.sup.1 and L.sup.2 is independently selected from C.sub.1 -C.sub.4 alkyl, C.sub.1 14 C.sub.4 alkoxide, .beta.-diketonate, cyclic amido, cyclic tris-alkoxoamine, and C.sub.6 -C.sub.10 aryl; and each of R.sup.1 and R.sup.2 is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 alkoxy, C.sub.6 -C.sub.8 cycloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.4 carboxyl, and --SiR.sup.3.sub.3 wherein each R.sup.3 is independently selected from H and C.sub.1 -C.sub.4 alkyl. Bismuth-containing films of the invention may be utilized in the construction of spatial light modulator devices, as buffer layers for the fabrication of ferroelectric material devices, and in dielectric, ferroelectric and superconductor thin film applications.
摘要翻译：一种在基板上形成含铋材料层的方法，包括用于形成含铋源源蒸气的铋酰胺源试剂的起泡器输送或液体输送蒸发，以及从含铋源源蒸气在铋基底上沉积以在基板上形成含铋材料层。铋酰胺源试剂可以包括式BiL1xL2y（NR1R2）z的铋酰胺化合物其中：z是1至3的整数; x + y + z = 3; L1和L2各自独立地选自C 1 -C 4烷基，C 11-14 C 4醇盐，β-二酮酸盐，环状酰胺基，环状三烷氧基胺和C 6 -C 10芳基; R 1和R 2各自独立地选自C 1 -C 8烷基，C 1 -C 8烷氧基，C 6 -C 8环烷基，C 6 -C 10芳基，C 1 -C 4羧基和-SiR 33，其中每个R 3独立地选自H和C 1 -C 4 烷基。本发明的含铋膜可用于构造空间光调制器件，作为用于制造铁电材料器件的缓冲层，以及介电，铁电和超导体薄膜应用。

8. 发明授权

US6146608A Stable hydride source compositions for manufacture of semiconductor devices and structures 失效
标题翻译：用于制造半导体器件和结构的稳定的氢化物源组合物
公开(公告)号：US6146608A
公开(公告)日：2000-11-14
申请号：US977225
申请日：1997-11-24
申请人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
发明人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
IPC分类号： C01B4/00 , C01B6/02 , C01B6/06 , C23C16/18 , C23C16/448 , F17C11/00 , H01L21/205 , C01B6/00 , C07F9/90
CPC分类号： C23C16/448 , C01B4/00 , C01B6/02 , C01B6/06 , C23C16/18 , F17C11/00 , H01L21/0237 , H01L21/02538 , H01L21/02549 , H01L21/0262 , F17C2203/0648 , F17C2270/0518 , Y02E60/321
摘要： A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.
摘要翻译：金属氢化物衍生物，其中至少一个氢原子被氘（21H）或氚（31H）同位素代替。这种金属氢化物的金属成分可以是III，IV或V族金属或过渡金属，例如锑，铝，镓，锡或锗。本发明的同位素稳定的金属氢化物衍生物可用作化学气相沉积，辅助化学气相沉积（例如激光辅助化学气相沉积，光辅助化学气相沉积，等离子体辅助化学气相沉积和离子 - 辅助化学气相沉积），离子注入，分子束外延和快速热处理。

9. 发明授权

US5916359A Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition 失效
标题翻译：用于液体输送化学气相沉积的烷烃和多胺溶剂组合物
公开(公告)号：US5916359A
公开(公告)日：1999-06-29
申请号：US975372
申请日：1997-11-20
申请人： Thomas H. Baum , Gautam Bhandari
发明人： Thomas H. Baum , Gautam Bhandari
IPC分类号： C09K3/00 , C23C16/18 , C23C16/40 , C23C16/448
CPC分类号： C23C16/409 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/4481 , Y10S423/14
摘要： A solvent composition useful for liquid delivery chemical vapor deposition of organometallic precursors such as .beta.-diketonate metal precursors. The solvent composition comprises a mixture of solvent species A, B and C in the proportion A:B:C wherein A is from about 3 to about 7 parts by volume, B is from about 2 to about 6 parts by volume, and C is from 0 to about 3 parts by volume, wherein A is a C.sub.6 -C.sub.8 alkane, B is a C.sub.8 -C.sub.12 alkane, and C is a glyme-based solvent (glyme, diglyme, tetraglyme, etc.) or a polyamine. The particular solvent composition including octane, decane and polyamine in an approximate 5:4:1 weight ratio is particularly usefully employed in the formation of SrBi.sub.2 Ta.sub.2 O.sub.9 films.
摘要翻译：用于液体输送化学气相沉积有机金属前体如β-二酮金属前体的溶剂组合物。溶剂组合物包含A：B：C比例的溶剂A，B和C的混合物，其中A为约3至约7体积份，B为约2至约6体积份，C为 0〜约3体积份，其中A为C6-C8烷烃，B为C8-C12烷烃，C为甘醇二甲醚溶剂（甘醇二甲醚，二甘醇二甲醚，四甘醇二甲醚等）或多胺。包含辛烷值，癸烷值和多胺重量比约5:4:1的特定溶剂组合物特别适用于形成SrBi2Ta2O9膜。

10. 发明授权

US06379748B1 Tantalum amide precursors for deposition of tantalum nitride on a substrate 失效
标题翻译：用于在衬底上沉积氮化钽的钽酰胺前体
公开(公告)号：US06379748B1
公开(公告)日：2002-04-30
申请号：US09483859
申请日：2000-01-17
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： C23C1406
CPC分类号： C30B25/02 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/105 , C30B29/38
摘要： Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microelectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.
摘要翻译：描述了钽和钛源试剂，包括用于通过诸如化学气相沉积，辅助化学气相沉积，离子注入，分子束外延和快速热处理的方法在衬底上沉积氮化钽材料的钽酰胺和钽氮化硅前体。可以使用前体在微电子器件结构上形成扩散阻挡层，使得能够在器件结构中使用铜金属化和铁电薄膜。

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