会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Computer system, memory management method and program thereof
    • 计算机系统,存储器管理方法及程序
    • US08930659B2
    • 2015-01-06
    • US11909883
    • 2006-03-30
    • Masahiko Takahashi
    • Masahiko Takahashi
    • G06F12/12G06F12/08G06F9/445G06F12/02
    • G06F12/0238G06F9/445G06F12/0292G06F12/08G06F12/1027G06F2212/2022G06F2212/401G06F2212/68G06F2212/7201
    • A computer system, having a non-volatile storage unit (152), a main storage unit (151), and a data processor (102) including a memory management unit (102A) for managing a program stored in the non-volatile storage unit and the main storage unit to transfer a program stored in the non-volatile storage unit to the main storage unit, wherein the memory management unit (102A) includes a program storage control function of storing a program subjected to predetermined data conversion and a program yet to be subjected to predetermined data conversion in the non-volatile storage unit, and a function of combining programs subjected to predetermined data conversion so as not to bridge over a boundary between blocks at the execution of the program storage control function, as well as, at a first access to a certain block, expanding all the data included in the block to a corresponding block of the main storage unit.
    • 一种具有非易失性存储单元(152),主存储单元(151)和数据处理器(102)的计算机系统,包括用于管理存储在非易失性存储单元中的程序的存储器管理单元(102A) 以及主存储单元,用于将存储在非易失性存储单元中的程序传送到主存储单元,其中存储器管理单元(102A)包括存储经过预定数据转换的程序和程序的程序存储控制功能 在非易失性存储单元中进行预定的数据转换,以及将执行预定的数据转换的程序组合起来,以便在执行程序存储控制功能时不跨越块之间的边界, 在对某个块的第一次访问时,将包括在块中的所有数据扩展到主存储单元的相应块。
    • 7. 发明申请
    • ETCHING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    • 半导体器件的蚀刻方法和制造方法
    • US20090246965A1
    • 2009-10-01
    • US12410504
    • 2009-03-25
    • Takuya MoriMasahiko Takahashi
    • Takuya MoriMasahiko Takahashi
    • H01L21/3065
    • H01L21/32137H01J37/3222H01J37/32238
    • Provided is an etching method capable of increasing a selectivity of a polysilicon film with respect to a silicon oxide film and suppressing the formation of recesses in a silicon base material. A wafer includes a gate oxide film, a polysilicon film and a hard mask film having an opening sequentially formed on a silicon base material, and has a native oxide film in a trench of the polysilicon film corresponding to the opening formed thereon. The native oxide film is etched, so that the polysilicon film is exposed at a bottom portion of the trench. An ambient pressure is set to be 13.3 Pa, and O2 gas, HBr gas and Ar gas are supplied to a processing space, and a frequency of bias voltage is set to be 13.56 MHz, so that the polysilicon film is etched by the plasma generated from the HBr gas to be completely removed.
    • 提供了能够提高多晶硅膜相对于氧化硅膜的选择性并抑制硅基材料中的凹部的形成的蚀刻方法。 晶片包括栅极氧化膜,多晶硅膜和具有依次形成在硅基材料上的开口的硬掩模膜,并且在与其上形成的开口对应的多晶硅膜的沟槽中具有自然氧化膜。 蚀刻自然氧化膜,使得多晶硅膜暴露在沟槽的底部。 将环境压力设定为13.3Pa,向加工空间供给O 2气体,HBr气体和Ar气体,将偏置电压的频率设定为13.56MHz,由此产生多晶硅膜 从HBr气体中完全去除。