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1. 发明授权

US07898775B2 Magnetoresistive device having bias magnetic field applying layer that includes two magnetic layers antiferromagnetically coupled to each other through intermediate layer 有权
标题翻译：具有偏磁场施加层的磁阻器件包括通过中间层彼此反铁磁耦合的两个磁性层
公开(公告)号：US07898775B2
公开(公告)日：2011-03-01
申请号：US11826290
申请日：2007-07-13
申请人： Kei Hirata , Shinji Hara , Takayasu Kanaya , Takeo Kagami
发明人： Kei Hirata , Shinji Hara , Takayasu Kanaya , Takeo Kagami
IPC分类号： G11B5/39
CPC分类号： G11B5/39
摘要： An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.
摘要翻译： MR元件包括其磁化方向响应于外部磁场而变化的自由层。两个偏置磁场施加层邻近MR元件的两个侧表面设置。每个偏置磁场施加层包括非磁性中间层以及设置成夹持中间层的第一磁性层和第二磁性层。第一和第二磁性层通过RKKY相互作用彼此反铁磁交换耦合。

2. 发明授权

US07398591B2 Manufacturing method of a thin-film magnetic head 有权
标题翻译：薄膜磁头的制造方法
公开(公告)号：US07398591B2
公开(公告)日：2008-07-15
申请号：US10971113
申请日：2004-10-25
申请人： Takeo Kagami , Takayasu Kanaya , Noriaki Kasahara , Kazuki Sato
发明人： Takeo Kagami , Takayasu Kanaya , Noriaki Kasahara , Kazuki Sato
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/332 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The present invention relates to a manufacturing method of a thin-film magnetic head whereby re-deposition and an overlapped part in a region of a magnetoresistive effect multi-layered structure opposite to an air bearing surface can be removed and also a width of a free layer can be narrowed.
摘要翻译：薄膜磁头的制造方法技术领域本发明涉及一种薄膜磁头的制造方法，其中可以除去与空气轴承表面相对的磁阻效应多层结构的区域中的再沉积和重叠部分，层可以变窄。

3. 发明申请

US20080030908A1 Magnetoresistive effect element, thin-film magnetic head, method for manufacturing magnetoresistive effect element, and method for manufacturing thin-film magnetic head 审中-公开
标题翻译：磁阻效应元件，薄膜磁头，磁阻效应元件的制造方法以及制造薄膜磁头的方法
公开(公告)号：US20080030908A1
公开(公告)日：2008-02-07
申请号：US11812311
申请日：2007-06-18
申请人： Takeo Kagami , Kosuke Tanaka , Shinji Hara , Takayasu Kanaya , Nobuyoshi Morizumi
发明人： Takeo Kagami , Kosuke Tanaka , Shinji Hara , Takayasu Kanaya , Nobuyoshi Morizumi
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.
摘要翻译：公开了磁阻效应（MR）元件，具有MR元件的薄膜磁头，MR元件的制造方法和制造薄膜磁头的方法。在垂直于层平面的方向上使用电流的MR元件包括下电极层，形成在下电极层上的MR多层结构，设置在MR多层结构的两侧的磁畴控制偏置层沿着轨道宽度方向并且由至少部分地包括hcp结构的材料制成，由在磁畴控制偏置层上形成的具有bcc结构的材料制成的金属层和MR多层结构以覆盖磁畴控制偏置层和MR多层结构，以及形成在金属层上的上电极层。

4. 发明授权

US07057859B2 Magneto-resistive device with reduced susceptibility to ion beam damage 失效
标题翻译：具有降低的离子束损伤敏感性的磁阻器件
公开(公告)号：US07057859B2
公开(公告)日：2006-06-06
申请号：US10600444
申请日：2003-06-23
申请人： Takeo Kagami , Kazuki Sato , Takayasu Kanaya , Shunji Saruki , Tetsuya Kuwashima
发明人： Takeo Kagami , Kazuki Sato , Takayasu Kanaya , Shunji Saruki , Tetsuya Kuwashima
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3106 , G11B5/313 , G11B5/3133 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.
摘要翻译：通过去除表面氧化膜以降低电阻并减少离子束损伤，改善了磁阻元件的特性。磁阻装置具有磁阻层，其包括隧道阻挡层，下面的被钉扎层和上覆自由层。在自由层上形成非磁性层以进行保护。形成与绝缘层和损伤减少层组成的复合层膜与有效区域接触，该有效区域有效地涉及磁阻层中的磁性检测，而不与有效区域重叠。损伤减少层由包括至少一种元素的材料制成，其原子量大于硅的原子量。绝缘层和损伤降低层不构成用于向自由层施加偏置磁场的磁畴控制层。

5. 发明申请

US20060067010A1 Manufacturing method of thin-film magnetic head and thin-film magnetic head 有权
标题翻译：薄膜磁头和薄膜磁头的制造方法
公开(公告)号：US20060067010A1
公开(公告)日：2006-03-30
申请号：US10971113
申请日：2004-10-25
申请人： Takeo Kagami , Takayasu Kanaya , Noriaki Kasahara , Kazuki Sato
发明人： Takeo Kagami , Takayasu Kanaya , Noriaki Kasahara , Kazuki Sato
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/332 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A manufacturing method of a thin-film magnetic head includes a step of depositing an MR multi-layered film on a lower electrode layer, a step of patterning the deposited MR multi-layered film to define a track width, a step of forming a layer containing at least first insulation layer at both track-width direction sides of the patterned MR multi-layered film, a step of depositing a first additional upper metal layer on the patterned MR multi-layered film and on the layer containing at least first insulation layer, a step of patterning the first additional upper metal layer and the MR multi-layered film to define a length in a direction perpendicular to the track-width direction so as to obtain an MR multi-layered structure, a step of forming a second insulation layer to surround the first additional upper metal layer and the MR multi-layered structure, a step of removing by etching the second insulation layer on the first additional upper metal layer formed on the MR multi-layered structure, a step of thereafter, forming a second additional upper metal layer on the first additional upper metal layer and on the second insulation layer, and a step of forming an upper electrode layer on the second additional upper metal layer.
摘要翻译：薄膜磁头的制造方法包括在下电极层上沉积MR多层膜的步骤，对沉积的MR多层膜进行图案化以限定磁道宽度的步骤，形成层的步骤在图案化MR多层膜的两个轨道宽度方向侧上至少含有第一绝缘层，在图案化MR多层膜上沉积第一附加上金属层和在至少包含第一绝缘层的层上沉积步骤图案化第一附加上金属层和MR多层膜以在垂直于轨道宽度方向的方向上限定长度以获得MR多层结构的步骤，形成第二绝缘体的步骤层以围绕第一附加上金属层和MR多层结构，通过蚀刻在形成在MR多层结构上的第一附加上金属层上的第二绝缘层去除步骤其次，在第一附加上金属层和第二绝缘层上形成第二另外的上金属层，以及在第二另外的上金属层上形成上电极层的步骤。

6. 发明申请

US20050195536A1 Thin-film magnetic head comprising bias layers having a large length in track width direction 失效
标题翻译：薄膜磁头包括在磁道宽度方向上具有大长度的偏置层
公开(公告)号：US20050195536A1
公开(公告)日：2005-09-08
申请号：US11066763
申请日：2005-02-28
申请人： Takeo Kagami , Noriaki Kasahara , Kazuki Sato , Takayasu Kanaya
发明人： Takeo Kagami , Noriaki Kasahara , Kazuki Sato , Takayasu Kanaya
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3932 , G11B2005/0008
摘要： The thin-film magnetic head of the present invention comprises an MR sensor wherein a first ferromagnetic layer in which a magnetization direction is fixed with respect to external magnetic fields, a non-magnetic intermediate layer, and a second ferromagnetic layer in which a magnetization direction changes with respect to the external magnetic fields are stacked, and wherein a sense current flows substantially parallel to the stacked layer surface. The thin-film magnetic head comprises a pair of bias layers for exerting a bias magnetic field upon the MR sensor; the bias layers extending substantially symmetrically from two sides of the MR sensor in a direction of track width of a recording medium, each bias layer being connected with the MR sensor over a length which is substantially the same as the MR sensor in a direction perpendicular to the air bearing surface; and each bias layer having a shape which is contained within an imaginary rectangle which has its long sides along the air bearing surface in the direction of the track width of the recording medium and its short sides in the direction perpendicular to the air bearing surface and which contacts the short side of the imaginary rectangle which is opposite the short side which contacts the MR sensor. The thin-film magnetic head further comprises a pair of lead layers for supplying the sense current to the MR sensor each extending from the air bearing surface to cover at least a portion of each of the bias layers.
摘要翻译：本发明的薄膜磁头包括MR传感器，其中磁化方向相对于外部磁场固定的第一铁磁层，非磁性中间层和第二铁磁层，其中磁化方向相对于外部磁场的变化被堆叠，并且其中感测电流基本上平行于堆叠的层表面流动。薄膜磁头包括用于在MR传感器上施加偏置磁场的一对偏置层; 偏置层在MR传感器的两侧沿着记录介质的磁道宽度的方向基本上对称地延伸，每个偏置层在与MR传感器垂直的方向上与MR传感器基本相同的长度上与MR传感器连接空气轴承表面; 并且每个偏置层具有包含在假想矩形内的形状，该假想矩形具有沿着记录介质的轨道宽度的空气轴承表面的长边，并且在垂直于空气轴承表面的方向上具有短边，接触与MR传感器接触的短边相反的假想矩形的短边。薄膜磁头还包括一对引导层，用于向MR传感器提供感测电流，每个引导层从空气支承表面延伸以覆盖每个偏置层的至少一部分。

7. 发明授权

US08427790B2 Thin film magnetic head having similarly structured resistive film pattern and magnetic bias layer 有权
标题翻译：具有类似结构的电阻膜图案和磁偏置层的薄膜磁头
公开(公告)号：US08427790B2
公开(公告)日：2013-04-23
申请号：US12216162
申请日：2008-06-30
申请人： Kei Hirata , Kazuki Sato , Yohei Koyanagi , Takayasu Kanaya , Takeo Kagami
发明人： Kei Hirata , Kazuki Sato , Yohei Koyanagi , Takayasu Kanaya , Takeo Kagami
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , G11B5/3166 , G11B5/3169 , G11B5/3173 , G11B5/3932
摘要： A thin film magnetic head includes a magnetoresistive element having a recording-medium-facing-surface which is to be faced with a magnetic recording medium; a magnetic bias layer located on a side opposite to the recording-medium-facing-surface of the magnetoresistive element, and applying a bias magnetic field to the magnetoresistive element in a direction orthogonal to the recording-medium-facing-surface; and a resistive film pattern having the recording-medium-facing-surface, the resistive film pattern being located side by side with the magnetoresistive element in a track-width direction.
摘要翻译：薄膜磁头包括具有面向磁记录介质的记录介质面对表面的磁阻元件; 位于与所述磁阻元件的记录介质相对表面相对的一侧的磁偏置层，并且在与所述记录介质相对表面正交的方向上向所述磁阻元件施加偏置磁场; 以及具有记录介质面向表面的电阻膜图案，电阻膜图案与磁阻元件沿轨道宽度方向并排定位。

8. 发明授权

US07950135B2 Manufacturing method of magnetoresistive effect element 有权
标题翻译：磁阻效应元件的制造方法
公开(公告)号：US07950135B2
公开(公告)日：2011-05-31
申请号：US11806518
申请日：2007-05-31
申请人： Takeo Kagami , Takayasu Kanaya
发明人： Takeo Kagami , Takayasu Kanaya
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B5/3967 , Y10T29/49037 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered structure with side surfaces substantially perpendicular to the layer lamination plane, a step of forming a first insulation layer on at least the side surfaces of the formed MR multi-layered structure, a step of forming a second insulation layer and a magnetic domain control bias layer on the lower electrode layer, and a step of forming an upper electrode layer on the MR multi-layered structure and the magnetic domain control bias layer.
摘要翻译：电流在垂直于层平面的方向流动的MR元件的制造方法包括在下电极层上形成具有基本上垂直于层叠平面的侧表面的MR多层结构的步骤，形成在形成的MR多层结构的至少侧面上的第一绝缘层，在下电极层上形成第二绝缘层和磁畴控制偏置层的步骤，以及形成上电极层的步骤 MR多层结构和磁畴控制偏置层。

9. 发明授权

US07768747B2 Thin-film magnetic head and manufacturing method thereof 有权
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US07768747B2
公开(公告)日：2010-08-03
申请号：US11735730
申请日：2007-04-16
申请人： Takeo Kagami , Takayasu Kanaya
发明人： Takeo Kagami , Takayasu Kanaya
IPC分类号： G11B5/33 , G11B5/127 , H04R31/00
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/11 , G11B5/3163 , G11B5/3912 , Y10T29/49046
摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, and an upper magnetic shield layer formed on the MR multi-layered structure. The lower magnetic shield layer consists of a first soft magnetic layer and a second soft magnetic layer laminated on and magnetically connected with the first soft magnetic layer. A part of an upper surface of the first soft magnetic layer outside both side ends in a track-width direction of the MR multi-layered structure is located lower in height than an upper surface within a region where the MR multi-layered structure is formed, of the lower magnetic shield layer. The second soft magnetic layer is formed outside both side ends in a track-width direction of the MR multi-layered structure.
摘要翻译：薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流在垂直于层压层表面的方向上流动，并且形成在MR上的上磁屏蔽层多层结构。下磁屏蔽层由层压在第一软磁层上并与第一软磁层磁连接的第一软磁层和第二软磁层组成。在MR多层结构的轨道宽度方向上的两侧端部外侧的第一软磁性层的上表面的一部分位于比形成有MR多层结构的区域内的上表面的高度的下磁屏蔽层。第二软磁性层形成在MR多层结构的轨道宽度方向的两侧端的外侧。

10. 发明申请

US20070289122A1 Manufacturing method of magnetoresistive effect element, manufacturing method of thin-film magnetic head and thin-film magnetic head 有权
标题翻译：磁阻效应元件的制造方法，薄膜磁头和薄膜磁头的制造方法
公开(公告)号：US20070289122A1
公开(公告)日：2007-12-20
申请号：US11806518
申请日：2007-05-31
申请人： Takeo Kagami , Takayasu Kanaya
发明人： Takeo Kagami , Takayasu Kanaya
IPC分类号： G11B5/187
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B5/3967 , Y10T29/49037 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered structure with side surfaces substantially perpendicular to the layer lamination plane, a step of forming a first insulation layer on at least the side surfaces of the formed MR multi-layered structure, a step of forming a second insulation layer and a magnetic domain control bias layer on the lower electrode layer, and a step of forming an upper electrode layer on the MR multi-layered structure and the magnetic domain control bias layer.
摘要翻译：电流在垂直于层平面的方向流动的MR元件的制造方法包括在下电极层上形成具有基本上垂直于层叠平面的侧表面的MR多层结构的步骤，形成在形成的MR多层结构的至少侧面上的第一绝缘层，在下电极层上形成第二绝缘层和磁畴控制偏置层的步骤，以及形成上电极层的步骤 MR多层结构和磁畴控制偏置层。

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