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1. 发明授权

US06866747B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06866747B2
公开(公告)日：2005-03-15
申请号：US10843004
申请日：2004-05-10
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H1/46 , B23K10/00 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/30 , H05H1/00 , C23C16/00
CPC分类号： B23K10/003 , B23K2101/40
摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
摘要翻译：在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

2. 发明授权

US06753496B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06753496B2
公开(公告)日：2004-06-22
申请号：US10010383
申请日：2001-12-07
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B23K1000
CPC分类号： B23K10/003 , B23K2101/40
摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
摘要翻译：在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

3. 发明授权

US06726802B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06726802B2
公开(公告)日：2004-04-27
申请号：US10211498
申请日：2002-08-02
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32266
摘要： A plasma processing apparatus includes a slot plate having a slot-formed region for passing microwave from a waveguide to a microwave entrance window, and a slot plate drive unit driving the slot plate to change the position of the slot plate with respect to the microwave entrance window. The slot plate is thus moved with respect to the microwave entrance window to change at least one of the position, number and area of slot openings where the microwave is passed. The plasma processing apparatus accordingly ensures uniform plasma processing even if the process condition significantly changes when films on a large-area substrate or wafer to be processed are made of different materials or a stacked-layer film composed of layers of different materials is to be processed.
摘要翻译：等离子体处理装置包括：槽板，其具有用于将微波从波导传递到微波入口窗口的槽形区域;以及槽板驱动单元，其驱动槽板以改变槽板相对于微波入口的位置窗口。狭缝板因此相对于微波入口窗移动，以改变微波通过的槽口的位置，数量和面积中的至少一个。因此，等离子体处理装置即使在待处理的大面积基板或晶片上的膜由不同的材料制成或由不同材料的层构成的叠层膜将被处理时，即使处理条件显着变化，也能确保均匀的等离子体处理。

4. 发明授权

US06638392B2 Plasma process apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06638392B2
公开(公告)日：2003-10-28
申请号：US09730739
申请日：2000-12-07
申请人： Naoko Yamamoto , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Naoko Yamamoto , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , H01J37/3244
摘要： A plasma process apparatus includes a dielectric plate to emit plasma inside a chamber, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.
摘要翻译：等离子体处理装置包括在室内发射等离子体的电介质板和用于支撑电介质板的电介质板支撑构件。在电介质板支撑构件上设置有用于向反应室内部供应反应气体的多个气体导入孔。气体导入孔的出口在与基板8的表面相对的一侧开口，并布置在电介质板5外侧的周边区域。接地电位施加到室盖和电介质板支撑构件，偏压为施加到基底。因此，可以获得能够使用均匀等离子体均匀地处理大面积的基板的低成本等离子体处理装置。

5. 发明授权

US06446573B2 Plasma process device 有权
标题翻译：等离子体处理装置
公开(公告)号：US06446573B2
公开(公告)日：2002-09-10
申请号：US09925572
申请日：2001-08-09
申请人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
发明人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/511 , H01J37/3244
摘要： A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.
摘要翻译：可以获得能够形成均匀等离子体并且应对较大成本的大尺寸基板的等离子体处理装置。等离子体处理装置包括处理室，微波引导装置，喷淋板和反应气体供应通道。微波引导装置引导微波进入处理室。淋浴板具有气体入口孔，以通过微波向处理室供应达到等离子体状态的反应气体，以及面向处理室的下表面和位于下表面相对侧的上表面。反应气体供给通路位于喷淋板的上表面，将反应气体供给到气体导入孔。反应气体供给通道的壁面包括淋浴板的上表面和与上表面相对的导体壁表面。

6. 发明授权

US06286454B1 Plasma process device 有权
标题翻译：等离子体处理装置
公开(公告)号：US06286454B1
公开(公告)日：2001-09-11
申请号：US09583161
申请日：2000-05-30
申请人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
发明人： Masaki Hirayama , Tadahiro Ohmi , Tatsushi Yamamoto , Takamitsu Tadera
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/511 , H01J37/3244
摘要： A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding device, a shower plate and a reaction gas supply passage. The microwave guiding device guides a microwave into the processing chamber. The shower plate has a gas inlet hole to supply to the processing chamber a reaction gas attaining a plasma state by the microwave, and a lower surface facing the processing chamber and an upper surface positioned on the opposite side of the lower surface. The reaction gas supply passage is a positioned on the upper surface of the shower plate and supplies the reaction gas to the gas inlet hole. A wall surface of the reaction gas supply passage includes an upper surface of the shower plate and a conductor wall surface opposing the upper surface.
摘要翻译：可以获得能够形成均匀等离子体并且应对较大成本的大尺寸基板的等离子体处理装置。等离子体处理装置包括处理室，微波引导装置，喷淋板和反应气体供给通道。微波引导装置引导微波进入处理室。淋浴板具有气体入口孔，以通过微波向处理室供应达到等离子体状态的反应气体，以及面向处理室的下表面和位于下表面相对侧的上表面。反应气体供给通道位于淋浴板的上表面上，并将反应气体供给到气体入口孔。反应气体供给通道的壁面包括淋浴板的上表面和与上表面相对的导体壁表面。

7. 发明授权

US06527908B2 Plasma process apparatus 失效
公开(公告)号：US06527908B2
公开(公告)日：2003-03-04
申请号：US09813147
申请日：2001-03-21
申请人： Norio Kanetsuki , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Norio Kanetsuki , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , C23C16/4401 , C23C16/511
摘要： A plasma process apparatus capable of preventing generation of plasma in an unwanted location and performing uniform plasma processing with stability is obtained. The plasma process apparatus includes a processing chamber having an internal wall surface; a microwave radiating member having one wall surface and the other wall surface that faces the internal wall surface of the processing chamber, and being disposed such that a space is formed between the other wall surface and a portion of the internal wall surface, and propagating and radiating microwaves within the processing chamber; and a reactive gas supply member, including a reactive gas supply passage having a space formed between the other wall surface of the microwave radiating member and the internal wall surface; and a microwave transmission preventing member disposed on a region, which faces the reactive gas supply passage, of the other wall surface of the microwave radiating member.

8. 发明授权

US5663845A Magnetic recording/reproducing apparatus 失效
标题翻译：磁记录/再现装置
公开(公告)号：US5663845A
公开(公告)日：1997-09-02
申请号：US443848
申请日：1995-05-18
申请人： Tatsushi Yamamoto , Shigeaki Kakiwaki , Tohru Okuda , Hideo Okada , Masaji Tsuji , Takamitsu Tadera , Akihito Yoshimoto
发明人： Tatsushi Yamamoto , Shigeaki Kakiwaki , Tohru Okuda , Hideo Okada , Masaji Tsuji , Takamitsu Tadera , Akihito Yoshimoto
IPC分类号： G11B15/46 , G11B15/50 , G11B15/52 , G11B15/54
CPC分类号： G11B15/54 , G11B15/46 , G11B15/50 , G11B15/52
摘要： A magnetic recording/reproducing apparatus compares speed information obtained by speed detecting means for a magnetic tape with a set travelling speed of the magnetic tape in a control circuit, and controls the rotational frequency of a driving motor for a take-up reel, thereby controlling constant-speed travelling of the magnetic tape, with employment of no capstan. According to this system, the overall apparatus can be simplified and miniaturized with reduction in weight and cost. Further, it is possible to improve constant-speed travelling performance of the magnetic tape by adjusting resonance and antiresonance appearing due to total equivalent inertia moment related to the magnetic tape and reels in the transfer characteristic of the control system.
摘要翻译：磁记录/再现装置将由磁带的速度检测装置获得的速度信息与控制电路中的磁带的设定行进速度进行比较，并且控制用于卷取卷轴的驱动电机的旋转频率，从而控制使用无绞盘的速度恒定的磁带。根据该系统，通过减轻重量和成本，可以使整体装置简化和小型化。此外，可以通过调节由于与控制系统的传送特性中的磁带和卷轴相关的总等效惯性矩而出现的共振和反谐振，来提高磁带的恒速行驶性能。

9. 发明授权

US5491594A Magnetic recording/reproducing apparatus 失效
标题翻译：磁记录/再现装置
公开(公告)号：US5491594A
公开(公告)日：1996-02-13
申请号：US65133
申请日：1993-05-20
申请人： Tatsushi Yamamoto , Sigeaki Kakiwaki , Tohru Okuda , Hideo Okada , Masaji Tsuji , Takamitsu Tadera , Akihito Yoshimoto
发明人： Tatsushi Yamamoto , Sigeaki Kakiwaki , Tohru Okuda , Hideo Okada , Masaji Tsuji , Takamitsu Tadera , Akihito Yoshimoto
IPC分类号： G11B15/46 , G11B15/50 , G11B15/52 , G11B15/54 , G11B15/093
CPC分类号： G11B15/54 , G11B15/46 , G11B15/50 , G11B15/52
摘要： A magnetic recording/reproducing apparatus compares speed information obtained by speed detecting means for a magnetic tape with a set travelling speed of the magnetic tape in a control circuit, and controls the rotational frequency of a driving motor for a take-up reel, thereby controlling constant-speed travelling of the magnetic tape, with employment of no capstan. According to this system, the overall apparatus can be simplified and miniaturized with reduction in weight and cost. Further, it is possible to improve constant-speed travelling performance of the magnetic tape by adjusting resonance and antiresonance appearing due to total equivalent inertia moment related to the magnetic tape and reels in the transfer characteristic of the control system.
摘要翻译：磁记录/再现装置将由磁带的速度检测装置获得的速度信息与控制电路中的磁带的设定行进速度进行比较，并且控制用于卷取卷轴的驱动电机的旋转频率，从而控制使用无绞盘的速度恒定的磁带。根据该系统，通过减轻重量和成本，可以使整体装置简化和小型化。此外，可以通过调节由于与控制系统的传送特性中的磁带和卷轴相关的总等效惯性矩而出现的共振和反谐振，来提高磁带的恒速行驶性能。

10. 发明授权

US06776879B2 Backing plate used for sputtering apparatus and sputtering method 失效
标题翻译：用于溅射装置和溅射方法的背板
公开(公告)号：US06776879B2
公开(公告)日：2004-08-17
申请号：US10058341
申请日：2002-01-28
申请人： Tatsushi Yamamoto , Takamitsu Tadera
发明人： Tatsushi Yamamoto , Takamitsu Tadera
IPC分类号： C23C1434
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3497
摘要： It is an object of the invention to provide a backing plate used for the sputtering apparatus and a sputtering method which can improve film deposition rate and film quality without increasing the size of the target with respect to the substrate. High sputtering power is applied to a target portion opposite to a location where a thin film is formed on a surface of a substrate, thereby a thin film having even film thickness and film quality can be formed without increasing the size of the target. Further, a cooling medium flow passage can eliminate temperature unevenness caused by different sputtering powers to be applied to a target surface. The problem caused by the temperature rise can be solved and the film deposition speed can be enhanced by increasing the sputtering power which can be applied to the target. Consequently, it is possible to improve productivity of the substrate.
摘要翻译：本发明的目的是提供一种用于溅射装置的背板和可以在不增加靶相对于基板的尺寸的情况下提高成膜速度和薄膜质量的溅射方法。将高溅射功率施加到与基板表面上形成薄膜的位置相对的目标部分，由此可以形成具有均匀的膜厚度和膜质量的薄膜，而不增加靶的尺寸。此外，冷却介质流路可以消除由施加到目标表面的不同溅射功率引起的温度不均匀。可以解决由温度上升引起的问题，并且可以通过增加可应用于靶的溅射功率来提高成膜速度。因此，可以提高基板的生产率。

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