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    • 2. 发明授权
    • Nanocomposite material for the production of index of refraction gradient films
    • 用于生产折射率梯度膜的纳米复合材料
    • US07473721B2
    • 2009-01-06
    • US10500194
    • 2003-01-03
    • Takamasa HaradaFumio KitaAndreas ZimmermannUlrike DellwoMartin MennigPeter W. OliveiraHelmut SchmidtHeike Schneider
    • Takamasa HaradaFumio KitaAndreas ZimmermannUlrike DellwoMartin MennigPeter W. OliveiraHelmut SchmidtHeike Schneider
    • C08K9/12
    • C08L83/06C08K3/013C09D183/06G02B1/04G03H2260/12C08L2666/04
    • The invention relates to solid or gel-type nanocomposite material which can be polymerised, containing a) 4.9 95.9 wt. % of a soluble polymer; b) 4-95 wt. % of a partially or totally condensed silane selected from the group of epoxyalkoxysilanes, alkoxysilanes and alkylalkoxysilanes, the silane having an inorganic condensation degree of between 33-100% and an organic conversion degree of between 0-95%; c) 0-60 wt. % of an acrylate; d) 0.1-50 wt. % of surface modified nanometric particles selected from the group of oxides, sulphides, selenides, tellurides, halogenides, carbides, arsenides, antimonides, nitrides, phosphides, carbonates, carboxylates, phosphates, sulphates, silicates, titanates, zirconates, aluminates, stannates, plumbates and a mixed oxides; e) 0-50 wt.-% of a plasticizer; f) 0-5 wt. % of a thermal or photochemical cross-linking initiator, sensitizer, auxiliary wetting agent, adhesive agent, antioxidant, stabiliser, coloring agent, photochrome material and thermochrome material in relation to the total weight (dry weight) of the nanocomposite material.
    • 本发明涉及可以聚合的固体或凝胶型纳米复合材料,其包含a)4.9 95.9wt。 %的可溶性聚合物; b)4-95wt。 选自环氧烷氧基硅烷,烷氧基硅烷和烷基烷氧基硅烷的部分或全部冷凝的硅烷的%,硅烷的无机缩合度在33-100%之间,有机转化度在0-95%之间; c)0-60wt。 %的丙烯酸酯; d)0.1-50wt。 选自氧化物,硫化物,硒化物,碲化物,卤化物,碳化物,砷化物,锑化物,氮化物,磷化物,碳酸盐,羧酸盐,磷酸盐,硫酸盐,硅酸盐,钛酸盐,锆酸盐,铝酸盐,锡酸盐,铅酸铅的表面改性纳米颗粒的% 和混合氧化物; e)0-50重量%的增塑剂; f)0-5wt。 相对于纳米复合材料的总重量(干重),热或光化学交联引发剂,敏化剂,辅助润湿剂,粘合剂,抗氧化剂,稳定剂,着色剂,感光材料和热变色材料的%。
    • 6. 发明授权
    • Nanoimprint resist
    • 纳米抗蚀剂
    • US07431858B2
    • 2008-10-07
    • US10511402
    • 2003-04-09
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigPeter W OliveiraHelmut Schmidt
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigPeter W OliveiraHelmut Schmidt
    • B44C1/22C03C15/00C03C25/68C23F1/00
    • G03F7/0757B82Y10/00B82Y40/00G03F7/0002G03F7/0017G03F7/0047
    • The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.
    • 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。
    • 7. 发明申请
    • Nanoimprint resist
    • 纳米抗蚀剂
    • US20050224452A1
    • 2005-10-13
    • US10511402
    • 2003-04-09
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigHelmut Schmidt
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigHelmut Schmidt
    • G03F7/20B81C1/00G03F7/00G03F7/004G03F7/075H01L21/027H01L21/3065C23F1/00B05D5/00B44C1/22C03C15/00C03C25/68G03G15/00H01L21/311H01L29/06
    • G03F7/0757B82Y10/00B82Y40/00G03F7/0002G03F7/0017G03F7/0047
    • The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.
    • 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。
    • 8. 发明申请
    • Surface light source
    • 表面光源
    • US20070025121A1
    • 2007-02-01
    • US10565787
    • 2004-07-15
    • Takamasa HaradaFumio KitaHiroki Kanao
    • Takamasa HaradaFumio KitaHiroki Kanao
    • F21V7/04
    • G02B6/0053G02B5/0242G02B5/0257G02B5/0278G02B5/0294G02B6/0036G02B6/0051G02B6/0061G02F1/133615
    • A surface light source comprising a light emitting part (11) consisting of a single spot light source, and a light guide plate (12), wherein a reflection plane (13) is provided on the back side of the light guide plate and a prism pattern (15) is also provided. A directional light diffusion film (14) consisting of at least two light scattering/transmitting phases having different refractive indexes, where one phase having a larger refractive index includes a large number of regions having a columnar structure extending in the thickness direction of the film and the columnar structure is inclining against the normal direction of the film at an angle of 5-60°, is arranged on the light exit surface side of the light guide plate (12) such that the scattering direction of the directional light diffusion film becomes the direction of uneven luminance. Unevenness of luminance becomes inconspicuous especially when it is observed from an oblique direction and highly efficient brighter irradiation of light is ensured in the front direction of a screen.
    • 一种表面光源,包括由单个点光源组成的发光部分(11)和导光板(12),其中反射平面(13)设置在导光板的背面,棱镜 还提供了图案(15)。 一种由具有不同折射率的至少两个光散射/透射相组成的定向光漫射膜(14),其中具有较大折射率的一相包括大量沿着膜的厚度方向延伸的柱状结构的区域, 柱状结构以5-60°的角度相对于膜的法线方向倾斜,布置在导光板(12)的光出射面侧,使得定向光漫射膜的散射方向成为 方向不均匀的亮度。 亮度的不均匀性变得不明显,特别是从倾斜方向观察时,确保了屏幕的正面方向上的高效的明亮的照射。
    • 9. 发明申请
    • Surface light source device
    • 表面光源装置
    • US20060268571A1
    • 2006-11-30
    • US10565584
    • 2004-07-15
    • Takamasa HaradaFumio KitaHiroki Kanao
    • Takamasa HaradaFumio KitaHiroki Kanao
    • F21V7/04
    • G02B6/0051G02B6/0038G02B6/0061
    • A surface light source device comprises a light emitting section (11) made of a single spot light source, a light guide plate (12), a reflective surface (13) provided on the back side of the light guide plate, and a prism pattern (15). On the light emitting surface side of the light guide plate (12), there is provided a directional light scattering film (14) consisting of at least two phases having different refractive indexes and scattering light when transmitting it. One phase of a larger refractive index includes a plenty of areas having a columnar structure extending in the thickness direction of a film and arranged to be perpendicular to a normal to the film, and exhibiting a maximum scattering angle of 10-40°.
    • 面光源装置包括由单点光源构成的发光部(11),导光板(12),设置在导光板背面的反射面(13)和棱镜图案 (15)。 在导光板(12)的发光面侧,设置了由透射不同的折射率和散射光的至少两相组成的定向光散射膜(14)。 较大折射率的一相包括大量具有在膜的厚度方向上延伸的柱状结构的区域,并且被布置为垂直于膜的法线,并具有10-40°的最大散射角。