专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5022036A Semiconductor laser device 失效
公开(公告)号：US5022036A
公开(公告)日：1991-06-04
申请号：US456673
申请日：1989-12-27
申请人： Takahiro Suyama , Masafumi Kondo , Kazuaki Sasaki , Masahiro Hosoda , Kosei Takahashi , Toshiro Hayakawa
发明人： Takahiro Suyama , Masafumi Kondo , Kazuaki Sasaki , Masahiro Hosoda , Kosei Takahashi , Toshiro Hayakawa
IPC分类号： H01S5/10 , H01S5/22 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/22 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate and a multi-layered crystal structure disposed on the substrate, the multi-layered crystal structure containing a first cladding layer, a quantum-well active layer for laser oscillation, and a second cladding layer with a striped ridge portion for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets.

2. 发明授权

US4984244A Semiconductor laser device 失效
公开(公告)号：US4984244A
公开(公告)日：1991-01-08
申请号：US406903
申请日：1989-09-13
申请人： Saburo Yamamoto , Taiji Morimoto , Kazuaki Sasaki , Masaki Kondo , Takahiro Suyama , Masafumi Kondo
发明人： Saburo Yamamoto , Taiji Morimoto , Kazuaki Sasaki , Masaki Kondo , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate, a striped mesa disposed on the substrate and having an active layer for laser oscillation, a current injection layer disposed on the striped mesa and having a width smaller than that of the striped mesa, and a burying layer disposed on both sides of the current injection layer so as to come into contact with the side walls of the current injection layer, the burying layer being capable of absorbing laser light produce in the active layer and of preventing current from flowing through the outside of the striped mesa.

3. 发明授权

US5042044A Semiconductor laser device, a semiconductor wafer 失效
标题翻译：半导体激光器件，半导体晶片
公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/24 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.

4. 发明授权

US4977568A Semiconductor laser device 失效
公开(公告)号：US4977568A
公开(公告)日：1990-12-11
申请号：US286682
申请日：1988-12-19
申请人： Saburo Yamamoto , Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo
发明人： Saburo Yamamoto , Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo
IPC分类号： H01S5/12 , H01S5/223 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2234 , H01S5/2235 , H01S5/2277
摘要： There is disclosed a semiconductor laser device with a strip-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation. This semiconductor laser device comprises an optical waveguide that a semiconductor laser device with a stripe-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer just above the striped channel of the substrate based on a decrease in the effective refractive index due to the striped channel, the outside of which absorbs a laser beam produced in the active layer; a striped mesa that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a plurality of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer.

5. 发明授权

US4860299A Semiconductor laser device 失效
公开(公告)号：US4860299A
公开(公告)日：1989-08-22
申请号：US195069
申请日：1988-05-17
申请人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
发明人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2232 , H01S5/2275
摘要： A semiconductor laser device comprising a substrate; a current blocking layer disposed on the substrate; a striped channel formed in a manner to reach the substrate through the current blocking layer; a striped mesa disposed on the area of the V-channel, the striped mesa being of a multi-layered crystal that is composed of a first cladding layer, an active layer, a second cladding layer, and a protective layer in that order; and burying layers having at least one of the following two, a pn-reverse bias junction and a high resistant crystal, the burying layer being formed on both sides of the striped mesa, wherein the protective layer is made of Ga.sub.1-x Al.sub.x As (x>O).

6. 发明申请

US20070161897A1 Ultrasonic treatment equipment 失效
标题翻译：超声波处理设备
公开(公告)号：US20070161897A1
公开(公告)日：2007-07-12
申请号：US10557237
申请日：2004-05-18
申请人： Kazuaki Sasaki , Takashi Azuma , Ken-ichi Kawabata , Shin-ichiro Umemura , Takashi Okai , Tetsuya Ishikawa
发明人： Kazuaki Sasaki , Takashi Azuma , Ken-ichi Kawabata , Shin-ichiro Umemura , Takashi Okai , Tetsuya Ishikawa
IPC分类号： A61B8/00
CPC分类号： A61N7/02 , A61B8/06 , A61B8/13 , A61B2090/378
摘要： Ultrasonic treatment equipment is provided which repeats therapeutic ultrasound exposure while measuring a degree of vessel constriction on a therapeutic ultrasound exposure basis. This equipment includes: a therapeutic ultrasonic transducer 2 which exposes a blood vessel of an affected part to a focused therapeutic ultrasonic wave for a specified period of exposure time; an imaging ultrasonic probe 3 which images an ultrasound tomographic image of the affected part; a display unit 24 which displays the ultrasound tomographic image; means 21 for detecting a blood flow signal from a signal received by the imaging ultrasonic probe and determining the blood flow velocity of the blood vessels of the affected part; means 21 for calculating a rate of change in blood flow velocity during the exposure to the therapeutic ultrasonic wave or before and after the exposure to the therapeutic ultrasonic wave; and means 23 for controlling exposure conditions of the therapeutic ultrasonic wave on the basis of the rate of change in blood flow velocity, and thereby controlling the therapeutic ultrasonic transducer.
摘要翻译：提供超声波处理设备，其在治疗超声暴露基础上测量血管收缩程度时重复治疗性超声波暴露。该设备包括：治疗超声波换能器2，其将受影响部分的血管暴露于聚焦的治疗超声波达指定的曝光时间; 成像超声波探头3，其对受影响部分的超声断层图像进行成像; 显示单元24，其显示超声断层图像; 用于从由成像超声波探头接收的信号中检测血流信号并确定受影响部分的血管的血流速度的装置21; 用于计算暴露于治疗超声波期间或暴露于治疗超声波之前和之后的血流速度变化率的装置21; 以及基于血流速度变化率来控制治疗超声波的暴露条件的装置23，由此控制治疗用超声波换能器。

7. 发明申请

US20050093428A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20050093428A1
公开(公告)日：2005-05-05
申请号：US10969015
申请日：2004-10-21
申请人： Kazuaki Kaneko , Hiroshi Umeda , Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Kaneko , Hiroshi Umeda , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L33/14 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/62 , H05B33/00 , H05B33/14
CPC分类号： H01L33/145 , H01L2224/48463 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.
摘要翻译：半导体发光器件包括：半导体衬底; 形成在所述半导体基板上的发光层; 形成在用于限制发光的发光层的一部分上的电流阻挡层; 形成在电流阻挡层和发光层的另一部分上的电流扩散层; 形成在电流扩展层上的前电极; 以及形成在半导体基板的后侧的后电极。电流阻挡层由中心区域和外部区域构成，该区域通过电流扩展层的一部分围绕中心区域，使得出现在器件的前表面上的发光区域具有环形形状。电流阻挡层的前电极和中心区域彼此相对。

8. 发明授权

US06849473B2 Semiconductor light-emitting device and method for manufacturing thereof 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US06849473B2
公开(公告)日：2005-02-01
申请号：US10253609
申请日：2002-09-25
申请人： Kazuaki Sasaki , Junichi Nakamura , Shouichi Ohyama
发明人： Kazuaki Sasaki , Junichi Nakamura , Shouichi Ohyama
IPC分类号： H01L33/14 , H01L33/30 , H01L33/38 , H01L21/00
CPC分类号： H01L33/145 , H01L33/14 , H01L33/30
摘要： In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is formed under the n-GaAs substrate, and a second electrode is formed on the grown-layer side. In this process, a region of the p-intermediate band gap layer just under the second electrode is removed, the p-current diffusion layer is stacked in the removal region on the p-cladding layer, and a junction plane of the p-current diffusion layer and the p-cladding layer becomes high in resistance due to an energy band structure of type II. This semiconductor light-emitting device is capable of reducing ineffective currents with a simple construction and taking out light effectively to outside, thus enhancing the emission intensity.
摘要翻译：在半导体发光器件中，在n-GaAs衬底上堆叠n-GaAs缓冲层，n包层，未掺杂有源层，p包层，p中间带隙层和p 电流扩散层。此外，在n-GaAs衬底下形成第一电极，在生长层侧形成第二电极。在该工序中，除去刚好在第二电极正下方的p中间带隙层的区域，p电流扩散层层叠在p包覆层的去除区域中，p电流的结面由于II型能带结构，扩散层和p型包层的电阻变高。该半导体发光装置能够以简单的结构减少无效电流，并且有效地将光量外部引出，从而提高发光强度。

9. 发明授权

US06399965B2 Semiconductor light emitting device with high yield and low power consumption 有权
标题翻译：半导体发光器件，产量高，功耗低
公开(公告)号：US06399965B2
公开(公告)日：2002-06-04
申请号：US09757689
申请日：2001-01-11
申请人： Junichi Nakamura , Kazuaki Sasaki , Shouichi Ohyama
发明人： Junichi Nakamura , Kazuaki Sasaki , Shouichi Ohyama
IPC分类号： H01L3300
CPC分类号： H01L33/12 , H01L33/02
摘要： There is provided a semiconductor light emitting device having improved adhesion of an electrode by reducing defects in a crystal surface. An n-type AlGaInP lower clad layer 12, an AlGaInP active layer 13, a p-type AlGaInP upper clad layer 14, a p-type AlGaInP intermediate layer 15 whose lattice matching rate &Dgr;a/a with GaAs is −3.3%, a p-type AlGaInP current diffusion layer 16 and a p-type electrode 17 are laminated on an n-type GaAs substrate 11 and an n-type electrode 18 is provided on the n-type GaAs substrate 11. Thus, the number of crystal defects in the crystal surface can be reduced to 20 or less per one LED by setting the value of the lattice matching rate &Dgr;a/a of the intermediate layer 15 to be −3.3%, which is lower than −2.5%. As a result, adhesion of the p-type electrode 17 formed on the current diffusion layer 16 is improved and thereby the yield of LED can be enhanced.
摘要翻译：通过减少晶体表面的缺陷，提供了具有改善的电极附着力的半导体发光器件。 n型AlGaInP下包层12，AlGaInP有源层13，p型AlGaInP上覆层14，与GaAs的晶格匹配率DELTAa / a为-3.3％的p型AlGaInP中间层15，p 型AlGaInP电流扩散层16和p型电极17层叠在n型GaAs衬底11上，并且n型电极18设置在n型GaAs衬底11上。因此，晶体缺陷的数量通过将中间层15的晶格匹配率DELTAa / a的值设定为-3.3％，低于-2.5％，每个LED的晶体面可以减少到20以下。结果，形成在电流扩散层16上的p型电极17的粘附性提高，从而可以提高LED的产量。

10. 发明授权

US5516723A Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same 失效
标题翻译：能够在基本振荡模式下具有良好的稳定性，降低电流泄漏和降低振荡阈限的半导体发光装置及其制造方法
公开(公告)号：US5516723A
公开(公告)日：1996-05-14
申请号：US435391
申请日：1995-05-05
申请人： Kazuaki Sasaki , Osamu Yamamoto
发明人： Kazuaki Sasaki , Osamu Yamamoto
IPC分类号： H01L33/14 , H01S5/183 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/40 , H01L21/20
CPC分类号： H01S5/2232 , H01L33/145 , H01S2304/12 , H01S5/18352 , H01S5/2206 , H01S5/3202 , H01S5/32308 , H01S5/4031
摘要： A semiconductor laser device includes a substrate having one of p- and n-conductivity types, and a current constrictive layer formed on a surface of the substrate and having the other type of conductivity. The current constrictive layer has a through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate. A third cladding layer having the one type of conductivity is filled in the through-channel, a surface of the third cladding layer being flush with a surface of a current constrictive layer. A first cladding layer, an active layer, and a second cladding layer which constitute a double heterostructure are formed over the third cladding layer and current constrictive layer.
摘要翻译：半导体激光器件包括具有p型和n型导电类型之一的衬底以及形成在衬底的表面上并具有另一种导电性的电流限制层。电流收缩层具有延伸到衬底表面的通道，用于在垂直于衬底表面的方向上限定电流路径。通道是沿垂直于基板的端面的方向延伸的带状图案。具有一种导电性的第三覆层被填充在通道中，第三包覆层的表面与电流限制层的表面齐平。形成在第三包层和电流收缩层上的构成双异质结构的第一包层，有源层和第二覆层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式