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1. 发明授权

US08900675B2 Deposition method and method for manufacturing deposition substrate 有权
标题翻译：用于制造沉积基板的沉积方法和方法
公开(公告)号：US08900675B2
公开(公告)日：2014-12-02
申请号：US13635227
申请日：2011-02-28
申请人： Takahiro Ibe , Tomoya Aoyama , Rena Tsuruoka , Satoshi Inoue , Tohru Sonoda
发明人： Takahiro Ibe , Tomoya Aoyama , Rena Tsuruoka , Satoshi Inoue , Tohru Sonoda
IPC分类号： B05D3/06 , H01L51/56 , C23C14/12 , C23C14/28 , H05B33/10 , H01L51/00 , C23C14/56 , H01L51/50
CPC分类号： H05B33/10 , C23C14/048 , C23C14/12 , C23C14/28 , C23C14/564 , H01L51/0027 , H01L51/5012 , H01L51/56
摘要： One embodiment of the present invention is a deposition method for forming a layer 13a containing a deposition material on a deposition target surface of a second substrate, comprising the steps of forming an absorbing layer 12 over one surface of a first substrate 11; forming a material layer 13 containing the deposition material over the absorbing layer; performing first heat treatment on the material layer from the other surface of the first substrate to a temperature lower than the sublimation temperature of the deposition material so as to remove an impurity 14 in the material layer 13; disposing the one surface of the first substrate and the deposition target surface of the second substrate to face each other; and performing second heat treatment on the material layer from the other surface of the first substrate.
摘要翻译：本发明的一个实施方案是用于在第二基底的沉积靶表面上形成含有沉积材料的层13a的沉积方法，包括以下步骤：在第一基底11的一个表面上形成吸收层12; 在吸收层上形成含有沉积材料的材料层13; 在所述材料层上从所述第一基板的另一表面进行第一热处理至低于所述沉积材料的升华温度的温度，以除去所述材料层13中的杂质14; 将第一基板的一个表面和第二基板的沉积目标表面布置成彼此面对; 以及从所述第一基板的另一表面对所述材料层进行第二热处理。

2. 发明申请

US20130005121A1 Deposition Method and Method for Manufacturing Deposition Substrate 有权
标题翻译：沉积方法和制备沉积基板的方法
公开(公告)号：US20130005121A1
公开(公告)日：2013-01-03
申请号：US13635227
申请日：2011-02-28
申请人： Takahiro Ibe , Tomoya Aoyama , Rena Sturuoka , Satoshi Inoue , Tohru Sonoda
发明人： Takahiro Ibe , Tomoya Aoyama , Rena Sturuoka , Satoshi Inoue , Tohru Sonoda
IPC分类号： H01L21/20
CPC分类号： H05B33/10 , C23C14/048 , C23C14/12 , C23C14/28 , C23C14/564 , H01L51/0027 , H01L51/5012 , H01L51/56
摘要： One embodiment of the present invention is a deposition method for forming a layer 13a containing a deposition material on a deposition target surface of a second substrate, comprising the steps of forming an absorbing layer 12 over one surface of a first substrate 11; forming a material layer 13 containing the deposition material over the absorbing layer; performing first heat treatment on the material layer from the other surface of the first substrate to a temperature lower than the sublimation temperature of the deposition material so as to remove an impurity 14 in the material layer 13; disposing the one surface of the first substrate and the deposition target surface of the second substrate to face each other; and performing second heat treatment on the material layer from the other surface of the first substrate.
摘要翻译：本发明的一个实施方案是用于在第二基底的沉积靶表面上形成含有沉积材料的层13a的沉积方法，包括以下步骤：在第一基底11的一个表面上形成吸收层12; 在吸收层上形成含有沉积材料的材料层13; 在所述材料层上从所述第一基板的另一表面进行第一热处理至低于所述沉积材料的升华温度的温度，以除去所述材料层13中的杂质14; 将第一基板的一个表面和第二基板的沉积目标表面布置成彼此面对; 以及从所述第一基板的另一表面对所述材料层进行第二热处理。

3. 发明申请

US20120012883A1 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND FILM FORMATION SUBSTRATE 有权
标题翻译：用于制造发光器件和膜形成衬底的方法
公开(公告)号：US20120012883A1
公开(公告)日：2012-01-19
申请号：US13259378
申请日：2010-04-08
申请人： Tomoya Aoyama , Kohei Yakoyama , Rena Tsuruoka , Hideki Uchida , Toru Sonoda , Satoshi Inoue
发明人： Tomoya Aoyama , Kohei Yakoyama , Rena Tsuruoka , Hideki Uchida , Toru Sonoda , Satoshi Inoue
IPC分类号： H01L33/46 , H01L33/60
CPC分类号： H01L51/0013 , C23C14/048 , H01L51/56
摘要： In a method for manufacturing a light-emitting device according to an embodiment of the present invention, one surface of a first substrate including a reflective layer including an opening, a light absorption layer formed over the reflective layer to cover the opening in the reflective layer, a protective layer formed over the light absorption layer and including a groove at a position overlapped with the opening in the reflective layer, and a material layer formed over the protective layer and a deposition surface of a second substrate are disposed to face each other and light irradiation is performed from the other surface side of the first substrate, so that an EL layer is formed in a region on the deposition surface of the second substrate, which is overlapped with the opening in the reflective layer.
摘要翻译：在本发明的实施方式的发光装置的制造方法中，具有包括开口部的反射层的第一基板的一个面，形成在反射层上的光吸收层覆盖反射层的开口部形成在所述光吸收层上并且在与所述反射层中的所述开口重叠的位置处的凹槽以及形成在所述保护层上方的材料层和所述第二基板的沉积表面上的保护层设置成彼此面对，从第一基板的另一表面侧进行光照射，从而在第二基板的沉积表面上与反射层中的开口重叠的区域中形成EL层。

4. 发明授权

US08618568B2 Method for manufacturing light-emitting device and film formation substrate 有权
标题翻译：制造发光元件及成膜基板的方法
公开(公告)号：US08618568B2
公开(公告)日：2013-12-31
申请号：US13259378
申请日：2010-04-08
申请人： Tomoya Aoyama , Kohei Yokoyama , Rena Tsuruoka , Hideki Uchida , Toru Sonoda , Satoshi Inoue
发明人： Tomoya Aoyama , Kohei Yokoyama , Rena Tsuruoka , Hideki Uchida , Toru Sonoda , Satoshi Inoue
IPC分类号： H01L33/00
CPC分类号： H01L51/0013 , C23C14/048 , H01L51/56
摘要： In a method for manufacturing a light-emitting device according to an embodiment of the present invention, one surface of a first substrate including a reflective layer including an opening, a light absorption layer formed over the reflective layer to cover the opening in the reflective layer, a protective layer formed over the light absorption layer and including a groove at a position overlapped with the opening in the reflective layer, and a material layer formed over the protective layer and a deposition surface of a second substrate are disposed to face each other and light irradiation is performed from the other surface side of the first substrate, so that an EL layer is formed in a region on the deposition surface of the second substrate, which is overlapped with the opening in the reflective layer.
摘要翻译：在本发明的实施方式的发光装置的制造方法中，具有包括开口部的反射层的第一基板的一个面，形成在反射层上的光吸收层覆盖反射层的开口部形成在所述光吸收层上并且在与所述反射层中的所述开口重叠的位置处的凹槽以及形成在所述保护层上方的材料层和所述第二基板的沉积表面上的保护层设置成彼此面对，从第一基板的另一表面侧进行光照射，从而在第二基板的沉积表面上与反射层中的开口重叠的区域中形成EL层。

5. 发明授权

US08815352B2 Film forming method and method for manufacturing film-formation substrate 有权
标题翻译：成膜方法及其制造方法
公开(公告)号：US08815352B2
公开(公告)日：2014-08-26
申请号：US13635177
申请日：2011-02-28
申请人： Tomoya Aoyama , Hisao Ikeda , Satoshi Inoue , Tohru Sonoda
发明人： Tomoya Aoyama , Hisao Ikeda , Satoshi Inoue , Tohru Sonoda
IPC分类号： B05D3/06 , B05D3/00
CPC分类号： H01L51/0026 , C23C14/048 , C23C14/06 , C23C14/34 , C23C14/5893 , H01L51/0013 , H01L51/56 , H05B33/10
摘要： One embodiment of the present invention is a film forming method including the steps of forming an absorption layer 12 over one surface of a first substrate 11; forming a layer 16 containing a high molecular compound over the absorption layer; removing an impurity in the layer containing the high molecular compound by performing a first heat treatment on the layer 16; forming a material layer 18 containing a first film formation material and a second film formation material over the layer 16; performing a second heat treatment to form a mixed layer 19 in which the material layer and the layer 16 are mixed over the absorption layer; and performing third heat treatment to form a layer 19a containing the first film formation material and the second film formation material on a film-formation target surface of a second substrate.
摘要翻译：本发明的一个实施方案是一种成膜方法，包括以下步骤：在第一基底11的一个表面上形成吸收层12; 在吸收层上形成含有高分子化合物的层16; 通过在层16上进行第一热处理来除去含有高分子化合物的层中的杂质; 在层16上形成含有第一成膜材料和第二成膜材料的材料层18; 进行第二热处理以形成其中材料层和层16在吸收层上混合的混合层19; 并进行第三热处理，以在第二基板的成膜目标表面上形成含有第一成膜材料和第二成膜材料的层19a。

6. 发明申请

US20130022757A1 Film Forming Method and Method for Manufacturing Film-Formation Substrate 有权
标题翻译：薄膜形成方法及薄膜形成基板的制造方法
公开(公告)号：US20130022757A1
公开(公告)日：2013-01-24
申请号：US13635177
申请日：2011-02-28
申请人： Tomoya Aoyama , Hisao Ikeda , Satoshi Inoue , Tohru Sonoda
发明人： Tomoya Aoyama , Hisao Ikeda , Satoshi Inoue , Tohru Sonoda
IPC分类号： H05B33/10
CPC分类号： H01L51/0026 , C23C14/048 , C23C14/06 , C23C14/34 , C23C14/5893 , H01L51/0013 , H01L51/56 , H05B33/10
摘要： One embodiment of the present invention is a film forming method including the steps of forming an absorption layer 12 over one surface of a first substrate 11; forming a layer 16 containing a high molecular compound over the absorption layer; removing an impurity in the layer containing the high molecular compound by performing a first heat treatment on the layer 16; forming a material layer 18 containing a first film formation material and a second film formation material over the layer 16; performing a second heat treatment to form a mixed layer 19 in which the material layer and the layer 16 are mixed over the absorption layer; and performing third heat treatment to form a layer 19a containing the first film formation material and the second film formation material on a film-formation target surface of a second substrate.
摘要翻译：本发明的一个实施方案是一种成膜方法，包括以下步骤：在第一基底11的一个表面上形成吸收层12; 在吸收层上形成含有高分子化合物的层16; 通过在层16上进行第一热处理来除去含有高分子化合物的层中的杂质; 在层16上形成含有第一成膜材料和第二成膜材料的材料层18; 进行第二热处理以形成其中材料层和层16在吸收层上混合的混合层19; 并进行第三热处理，以在第二基板的成膜目标表面上形成含有第一成膜材料和第二成膜材料的层19a。

7. 发明授权

US08367152B2 Manufacturing method of light-emitting device 有权
标题翻译：发光装置的制造方法
公开(公告)号：US08367152B2
公开(公告)日：2013-02-05
申请号：US12054954
申请日：2008-03-25
申请人： Kohei Yokoyama , Hisao Ikeda , Yosuke Sato , Tomoya Aoyama , Takahiro Ibe , Yoshiharu Hirakata
发明人： Kohei Yokoyama , Hisao Ikeda , Yosuke Sato , Tomoya Aoyama , Takahiro Ibe , Yoshiharu Hirakata
IPC分类号： B05D5/12
CPC分类号： H01L51/0011 , H01L51/0003 , H01L51/0013 , H01L51/56
摘要： For a full-color flat panel display, demands for high definition, high aperture ratio and high reliability have been increasing. Therefore, increasing in the number of pixels and narrowing a pixel pitch have been major issues. According to the present invention, a layer including an organic compound is selectively formed with a light-exposure apparatus used in a photolithography technique without a resist mask. A material layer including a photopolymerization initiator, a material polymerized with the photopolymerization initiator, and an organic compound are formed on a plate, and then are exposed to light and selectively cured. A film-formation substrate is disposed so as to face the plate. The film-formation substrate or the material layer is heated so that the organic compound included in a region exposed to light or a region not exposed to light is evaporated to be selectively deposited on the surface of the film-formation substrate.
摘要翻译：对于全彩平板显示器，高清晰度，高开口率和高可靠性的要求越来越高。因此，增加像素数量和缩小像素间距是主要问题。根据本发明，使用不具有抗蚀剂掩模的光刻技术中使用的曝光装置选择性地形成包含有机化合物的层。在板上形成包含光聚合引发剂，与光聚合引发剂聚合的材料和有机化合物的材料层，然后曝光并选择性固化。成膜基板被设置成面对板。加热成膜基板或材料层，使得暴露于光的区域中包含的有机化合物或不暴露于光的区域被蒸发以选择性地沉积在成膜基板的表面上。

8. 发明授权

US08734914B2 Film formation method and method for manufacturing light-emitting device 有权
标题翻译：用于制造发光装置的成膜方法和方法
公开(公告)号：US08734914B2
公开(公告)日：2014-05-27
申请号：US13399122
申请日：2012-02-17
申请人： Hisao Ikeda , Takahiro Ibe , Tomoya Aoyama
发明人： Hisao Ikeda , Takahiro Ibe , Tomoya Aoyama
IPC分类号： C23C14/12 , C23C14/00 , C23C14/24 , C23C14/26 , C23C14/04 , C23C16/448
CPC分类号： C23C14/12 , B05D2401/30 , C23C14/00 , C23C14/042 , C23C14/24 , C23C14/26 , C23C16/4485 , H01L51/001 , H01L51/0038 , H01L51/0042 , H01L51/0059 , H01L51/006 , H05B33/10
摘要： A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.
摘要翻译：在蒸发源基板的主表面上形成包括蒸发材料的粘合剂材料层，其上形成有膜的基板以使粘合剂材料层及其主表面彼此面对，进行热处理在蒸发源基板的后表面上，使粘合剂材料层中的蒸发材料被加热以进行升华等，从而在其上形成有膜的基板上形成蒸镀材料层。当将低分子材料用于蒸发材料并且高分子材料用于粘合剂材料时，可以容易地调节粘度，因此成膜可能比常规成膜更高的生产量。

9. 发明申请

US20120148730A1 Film Formation Method and Method for Manufacturing Light-Emitting Device 有权
标题翻译：制造发光装置的成膜方法及方法
公开(公告)号：US20120148730A1
公开(公告)日：2012-06-14
申请号：US13399122
申请日：2012-02-17
申请人： Hisao Ikeda , Takahiro Ibe , Tomoya Aoyama
发明人： Hisao Ikeda , Takahiro Ibe , Tomoya Aoyama
IPC分类号： B05D5/12
CPC分类号： C23C14/12 , B05D2401/30 , C23C14/00 , C23C14/042 , C23C14/24 , C23C14/26 , C23C16/4485 , H01L51/001 , H01L51/0038 , H01L51/0042 , H01L51/0059 , H01L51/006 , H05B33/10
摘要： A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.
摘要翻译：在蒸发源基板的主表面上形成包括蒸发材料的粘合剂材料层，其上形成有膜的基板以使粘合剂材料层及其主表面彼此面对，进行热处理在蒸发源基板的后表面上，使粘合剂材料层中的蒸发材料被加热以进行升华等，从而在其上形成有膜的基板上形成蒸镀材料层。当将低分子材料用于蒸发材料并且高分子材料用于粘合剂材料时，可以容易地调节粘度，因此成膜可能比常规成膜更高的生产量。

10. 发明申请

US20080268137A1 Film Formation Method and Method for Manufacturing Light-Emitting Device 有权
标题翻译：制造发光装置的成膜方法及方法
公开(公告)号：US20080268137A1
公开(公告)日：2008-10-30
申请号：US12055970
申请日：2008-03-26
申请人： Hisao Ikeda , Takahiro Ibe , Tomoya Aoyama
发明人： Hisao Ikeda , Takahiro Ibe , Tomoya Aoyama
IPC分类号： B05D5/12 , C23C14/34
CPC分类号： C23C14/12 , B05D2401/30 , C23C14/00 , C23C14/042 , C23C14/24 , C23C14/26 , C23C16/4485 , H01L51/001 , H01L51/0038 , H01L51/0042 , H01L51/0059 , H01L51/006 , H05B33/10
摘要： A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.
摘要翻译：在蒸发源基板的主表面上形成包括蒸发材料的粘合剂材料层，其上形成有膜的基板以使粘合剂材料层及其主表面彼此面对，进行热处理在蒸发源基板的后表面上，使粘合剂材料层中的蒸发材料被加热以进行升华等，从而在其上形成有膜的基板上形成蒸镀材料层。当将低分子材料用于蒸发材料并且高分子材料用于粘合剂材料时，可以容易地调节粘度，因此成膜可能比常规成膜更高的生产量。

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