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1. 发明授权

US06500753B2 Method to reduce the damages of copper lines 有权
标题翻译：减少铜线损坏的方法
公开(公告)号：US06500753B2
公开(公告)日：2002-12-31
申请号：US09838209
申请日：2001-04-20
申请人： Syun-Ming Jang , Ying-Ho Chen , Jih-Churng Twu , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Jih-Churng Twu , Chen-Hua Yu
IPC分类号： H01L218238
CPC分类号： H01L21/7684 , H01L21/76838 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： The invention teaches the addition of copper lines, these copper lines to be added to isolated copper lines or to selected copper lines within a collection of copper lines. The invention also teaches the addition of copper end caps to isolated copper lines or to selected copper lines within a collection of copper lines. The invention further teaches the widening of copper lines for isolated copper lines or selected copper lines within a collection of copper lines.
摘要翻译：本发明教导了铜线的添加，这些铜线被添加到隔离铜线或铜线集合内的选定铜线。本发明还教导了将铜端盖添加到铜线集合中的隔离铜线或铜线。本发明进一步教导了铜线集合中用于隔离铜线或选定铜线的铜线的扩大。

2. 发明授权

US6100163A Gap filling of shallow trench isolation by ozone-tetraethoxysilane 有权
标题翻译：通过臭氧四乙氧基硅烷进行浅沟隔离的间隙填充
公开(公告)号：US6100163A
公开(公告)日：2000-08-08
申请号：US226277
申请日：1999-01-07
申请人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： A method for filling a trench within a silicon substrate. There is first provided a silicon substrate having a trench formed therein. There is then oxidized thermally the silicon substrate to form within the trench a thermal silicon oxide trench liner layer. There is then treated the thermal silicon oxide trench liner layer by exposure to a plasma formed from a gas composition which upon plasma activation simultaneously supplies an active nitrogen containing species and an active oxygen containing species to form a plasma treated thermal silicon oxide trench liner layer. There is then formed upon the plasma treated thermal silicon oxide trench liner layer a conformal silicon oxide intermediate layer formed through a plasma enhanced chemical vapor deposition (PECVD) method employing a silane silicon source material. Finally, there is then formed upon the conformal silicon oxide intermediate layer a gap filling silicon oxide trench fill layer through an ozone assisted sub-atmospheric pressure thermal chemical vapor deposition (SACVD) method employing an ozone oxidant and a tetra-ethyl-ortho-silicate (TEOS) silicon source material.
摘要翻译：一种用于在硅衬底内填充沟槽的方法。首先提供其中形成有沟槽的硅衬底。然后将硅衬底热氧化以在沟槽内形成热氧化硅沟槽衬垫层。然后通过暴露于由气体组合物形成的等离子体来处理热氧化硅沟槽衬里层，其在等离子体激活时同时提供含活性氮的物质和含活性氧的物质以形成等离子体处理的热氧化硅沟槽衬里层。然后在等离子体处理的热氧化硅沟槽衬垫层上形成通过使用硅烷硅源材料的等离子体增强化学气相沉积（PECVD）方法形成的共形氧化硅中间层。最后，通过使用臭氧氧化剂和四乙基原硅酸盐的臭氧辅助亚大气压热化学气相沉积（SACVD）方法，在保形氧化硅中间层上形成填充氧化硅沟槽填充层的间隙（TEOS）硅源材料。

3. 发明授权

US5817567A Shallow trench isolation method 失效
标题翻译：浅沟隔离法
公开(公告)号：US5817567A
公开(公告)日：1998-10-06
申请号：US826710
申请日：1997-04-07
申请人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224 , Y10S148/05
摘要： An improved method for implementing shallow trench isolation in integrated circuits is described. The method begins with the formation of trenches, through patterning and etching. These trenches are then filled with a conformal layer of silicon oxide. This is followed by overcoating with a layer of a hard material such as silicon nitride or boron nitride. Next, chemical-mechanical polishing is used to remove the hard layer everywhere except where it has filled the depressions that overlie the trenches. Then, a non-selective etch is used to remove the remaining hard layer material as well as some of the silicon oxide, so that a planar surface is maintained. Finally, chemical-mechanical polishing is used a second time to remove excess silicon oxide from above the trenches' surface.
摘要翻译：描述了一种用于在集成电路中实现浅沟槽隔离的改进方法。该方法开始于通过图案化和蚀刻形成沟槽。然后用保形层的氧化硅填充这些沟槽。随后用一层硬质材料如氮化硅或氮化硼涂覆。接下来，使用化学机械抛光来去除硬质层，除了填充了覆盖在沟槽上的凹陷之外。然后，使用非选择性蚀刻来除去剩余的硬质层材料以及一些氧化硅，从而保持平坦的表面。最后，第二次使用化学机械抛光从沟槽表面上方除去过量的氧化硅。

4. 发明授权

US5741740A Shallow trench isolation (STI) method employing gap filling silicon oxide dielectric layer 失效
标题翻译：浅沟槽隔离（STI）方法采用间隙填充氧化硅介电层
公开(公告)号：US5741740A
公开(公告)日：1998-04-21
申请号：US873836
申请日：1997-06-12
申请人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
IPC分类号： H01L21/316 , H01L21/762 , H01L21/76
CPC分类号： H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02274 , H01L21/0234 , H01L21/31612 , H01L21/76224 , Y10S148/05
摘要： A method for filling a trench within a silicon substrate. There is first provided a silicon substrate having a trench formed therein. There is then oxidized thermally the silicon substrate to form within the trench a thermal silicon oxide trench liner layer. There is then formed upon the thermal silicon oxide trench liner layer a conformal silicon oxide intermediate layer formed through a plasma enhanced chemical vapor deposition (PECVD) method employing a silane silicon source material. Finally, there is then formed upon the conformal silicon oxide intermediate layer a gap filling silicon oxide trench fill layer through an ozone assisted sub-atmospheric pressure thermal chemical vapor deposition (SACVD) method employing an ozone oxidant and a tetra-ethyl-ortho-silicate (TEOS) silicon source material. To provide improved properties of the gap filling silicon oxide trench fill layer the thermal silicon oxide trench liner layer may be treated with a nitrogen containing plasma prior to forming the conformal silicon oxide intermediate layer thereupon.
摘要翻译：一种用于在硅衬底内填充沟槽的方法。首先提供其中形成有沟槽的硅衬底。然后将硅衬底热氧化以在沟槽内形成热氧化硅沟槽衬垫层。然后在热氧化硅沟槽衬垫层上形成通过使用硅烷硅源材料的等离子体增强化学气相沉积（PECVD）方法形成的共形氧化硅中间层。最后，通过使用臭氧氧化剂和四乙基原硅酸盐的臭氧辅助亚大气压热化学气相沉积（SACVD）方法，在保形氧化硅中间层上形成填充氧化硅沟槽填充层的间隙（TEOS）硅源材料。为了提供间隙填充氧化硅沟槽填充层的改进性能，可以在形成其之间的共形氧化硅中间层之前用含氮等离子体处理热氧化硅沟槽衬里层。

5. 发明授权

US06239023B1 Method to reduce the damages of copper lines 有权
公开(公告)号：US06239023B1
公开(公告)日：2001-05-29
申请号：US09320757
申请日：1999-05-27
申请人： Syun-Ming Jang , Ying-Ho Chen , Jih-Churng Twu , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Jih-Churng Twu , Chen-Hua Yu
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/76838 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： The invention teaches the addition of copper lines, these copper lines to be added to isolated copper lines or to selected copper lines within a collection of copper lines. The invention also teaches the addition of copper end caps to isolated copper lines or to selected copper lines within a collection of copper lines. The invention further teaches the widening of copper lines for isolated copper lines or selected copper lines within a collection of copper lines.

6. 发明授权

US5731241A Self-aligned sacrificial oxide for shallow trench isolation 失效
标题翻译：用于浅沟槽隔离的自对准牺牲氧化物
公开(公告)号：US5731241A
公开(公告)日：1998-03-24
申请号：US857160
申请日：1997-05-15
申请人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76232 , Y10S148/05
摘要： The present invention provides a method of manufacturing a sacrificial self aligned sub-atmospheric chemical vapor deposition (SACVD) O.sub.3 TEOS layer 50 70 over a trench oxide 40 to protect the trench oxide from excessive subsequent etch steps. The SACVD O.sub.3 TEOS layer has a higher deposition rate over the trench oxide layer 40 than over the surrounding non-trench thermally grown pad oxides. The trench oxide is preferably formed using a process of PECVD, LPTEOS, or O.sub.3 -TEOS. The invention provides two preferred embodiments: (1) a first self aligned sacrificial O.sub.3 TEOS oxide layer 50 deposited before the pad oxide etch and (2) a second self aligned sacrificial O.sub.3 TEOS oxide layer 70 deposited before the sacrificial implant oxide etch. The invention can be applied in a variety of situations where the trench oxide is exposed to damaging etches.
摘要翻译：本发明提供了一种在沟槽氧化物40上制造牺牲自对准亚大气压化学气相沉积（SACVD）O3 TEOS层5070的方法，以保护沟槽氧化物免于过多的后续蚀刻步骤。 SACVD O3 TEOS层在沟槽氧化物层40上的沉积速率高于周围的非沟槽热生长焊盘氧化物。沟槽氧化物优选使用PECVD，LPTEOS或O3-TEOS的工艺形成。本发明提供了两个优选实施例：（1）在氧化层蚀刻之前沉积的第一自对准牺牲O 3 TEOS氧化物层50和（2）在牺牲注入氧化物蚀刻之前沉积的第二自对准牺牲O 3 TEOS氧化物层70。本发明可以应用于各种情况，其中沟槽氧化物暴露于有害蚀刻。

7. 发明授权

US5702977A Shallow trench isolation method employing self-aligned and planarized trench fill dielectric layer 失效
标题翻译：采用自对准和平面化沟槽填充介质层的浅沟槽隔离方法
公开(公告)号：US5702977A
公开(公告)日：1997-12-30
申请号：US810390
申请日：1997-03-03
申请人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224 , Y10S148/05
摘要： A method for forming within a trench within a substrate within an integrated circuit a planarized trench fill layer. There is first provided a substrate having a trench formed therein. There is formed upon the substrate at regions other than those within the trench a first integrated circuit layer which has a composition which inhibits formation upon the first integrated circuit layer of a trench fill layer which is subsequently formed upon the substrate and within the trench. There is also formed within the trench but not upon the substrate at regions other than those within the trench a second integrated circuit layer which has a composition which promotes formation within the trench of the trench fill layer which is subsequently formed upon the substrate and within the trench. Finally, there is formed upon the substrate and within the trench the trench fill layer. The trench fill layer is formed to a thickness over the trench such that when the trench fill layer is planarized through a chemical mechanical polish (CMP) planarizing method there is avoided formation of a dish within a planarized trench fill layer formed within the trench.
摘要翻译：一种在集成电路内的衬底内的沟槽内形成平坦化沟槽填充层的方法。首先提供其中形成有沟槽的衬底。在沟槽内的不同于沟槽内的区域的基底上形成第一集成电路层，该第一集成电路层具有阻止在沟槽填充层的第一集成电路层上形成的组成，后者形成在衬底上并在沟槽内。在沟槽内还形成在衬底上的不在沟槽内的衬底上的第二集成电路层，该第二集成电路层具有促进在沟槽填充层的沟槽内形成的组成，其随后形成在衬底上并在衬底内沟。最后，在衬底上并在沟槽内形成沟槽填充层。沟槽填充层形成为在沟槽上方的厚度，使得当沟槽填充层通过化学机械抛光（CMP）平面化方法平坦化时，避免在形成在沟槽内的平坦化沟槽填充层内形成皿。

8. 发明授权

US06239002B1 Thermal oxidizing method for forming with attenuated surface sensitivity ozone-teos silicon oxide dielectric layer upon a thermally oxidized silicon substrate layer 有权
标题翻译：在氧化硅衬底层上形成具有衰减表面灵敏度的臭氧氧化硅氧化物介电层的热氧化方法
公开(公告)号：US06239002B1
公开(公告)日：2001-05-29
申请号：US09174660
申请日：1998-10-19
申请人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
发明人： Syun-Ming Jang , Ying-Ho Chen , Chen-Hua Yu
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , H01L21/76205
摘要： A method for forming a trench isolation region within a trench within a silicon substrate. There is first provided a silicon substrate having a trench formed therein. There is then formed over the silicon substrate and filling the trench a silicon oxide trench fill layer. There is then thermally oxidized the silicon substrate and the silicon oxide trench fill layer within a thermal oxidation atmosphere to form a densified silicon oxide trench fill layer upon a silicon oxide trench liner layer within an oxidized trench within an oxidized silicon substrate, where the silicon oxide trench liner layer is formed from oxidation of the silicon substrate when forming the oxidized silicon substrate.
摘要翻译：一种用于在硅衬底内的沟槽内形成沟槽隔离区的方法。首先提供其中形成有沟槽的硅衬底。然后形成在硅衬底上并且将沟槽填充到氧化硅沟槽填充层。然后在热氧化气氛中热氧化硅衬底和氧化硅沟槽填充层，以在氧化硅衬底内的氧化沟槽内的氧化硅沟槽衬垫层上形成致密的氧化硅沟槽填充层，其中氧化硅当形成氧化硅衬底时，沟槽衬垫层由硅衬底的氧化形成。

9. 发明授权

US06171896B2 Method of forming shallow trench isolation by HDPCVD oxide 失效
标题翻译：通过HDPCVD氧化物形成浅沟槽隔离的方法
公开(公告)号：US06171896B2
公开(公告)日：2001-01-09
申请号：US08794597
申请日：1997-02-03
申请人： Syun-Ming Jang , Chen-Hua Yu , Ying-Ho Chen
发明人： Syun-Ming Jang , Chen-Hua Yu , Ying-Ho Chen
IPC分类号： H01L218238
CPC分类号： H01L21/76229
摘要： A method for forming planarized shallow trench isolation is described. A pad oxide layer is grown over the surface of a semiconductor substrate. A nitride layer is deposited overlying the pad oxide layer. A plurality of isolation trenches are etched through the nitride and pad oxide layers into the semiconductor substrate wherein there are at least one first wide nitride region between two of the trenches and at least one second narrow nitride region between another two of the trenches. A high density plasma oxide layer is deposited over the nitride layer and within the isolation trenches wherein the high density plasma oxide layer fills the isolation trenches and wherein the high density plasma oxide deposits more thickly in the first region over the wide nitride layer and deposits more thinly in the second region over the narrow nitride layer. A photoresist mask is formed over the high density plasma oxide layer. The substrate is exposed to actinic light wherein a central portion of the first region is exposed. The high density plasma oxide layer is etched away where it has been exposed. The high density plasma oxide layer remaining is polished away whereby the substrate is planarized and fabrication of said integrated circuit device is completed.
摘要翻译：描述了形成平坦化浅沟槽隔离的方法。衬底氧化物层生长在半导体衬底的表面上。在衬垫氧化物层上沉积氮化物层。通过氮化物和衬垫氧化物层蚀刻多个隔离沟槽到半导体衬底中，其中在两个沟槽之间存在至少一个第一宽氮化物区域和另外两个沟槽之间的至少一个第二窄氮化物区域。高密度等离子体氧化物层沉积在氮化物层之上和隔离沟槽内，其中高密度等离子体氧化物层填充隔离沟槽，并且其中高密度等离子体氧化物在宽氮化物层上的第一区域中更厚地沉积并沉积更多在窄的氮化物层上的第二区域中薄。在高密度等离子体氧化物层上形成光刻胶掩模。将基板暴露于其中暴露第一区域的中心部分的光化光。将高密度等离子体氧化物层蚀刻掉已被暴露的地方。抛光剩余的高密度等离子体氧化物层，由此使衬底平坦化，并且完成所述集成电路器件的制造。

10. 发明授权

US5869384A Trench filling method employing silicon liner layer and gap filling silicon oxide trench fill layer 失效
标题翻译：沟槽填充方法采用硅衬层和间隙填充氧化硅沟槽填充层
公开(公告)号：US5869384A
公开(公告)日：1999-02-09
申请号：US820467
申请日：1997-03-17
申请人： Chen-Hua Yu , Syun-Ming Jang , Ying-Ho Chen
发明人： Chen-Hua Yu , Syun-Ming Jang , Ying-Ho Chen
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： A method for filling a trench within a substrate. There is first provided a substrate having a trench formed within the substrate. There is then formed over the substrate and within the trench a silicon layer. The silicon layer has an aperture formed therein where the silicon layer is formed within the trench. There is then formed upon the silicon layer and filling the aperture a gap filling silicon oxide trench fill layer. The gap filling silicon oxide trench fill layer is formed through an ozone assisted sub-atmospheric pressure chemical vapor deposition (SACVD) method. Finally, the substrate is annealed thermally in an oxygen containing atmosphere to form within the trench an oxidized silicon layer from the silicon layer, where the oxidized silicon layer is contiguous with a densified gap filling silicon oxide trench fill layer simultaneously formed from the gap filling silicon oxide trench fill layer. Through the method, the densified gap filling silicon oxide trench fill layer is formed without a surface sensitivity.
摘要翻译：一种填充衬底内的沟槽的方法。首先提供在衬底内形成沟槽的衬底。然后形成在衬底上并且在沟槽内形成硅层。硅层在其中形成有孔，其中硅层形成在沟槽内。然后在硅层上形成填充孔的填充氧化硅沟槽填充层的间隙。通过臭氧辅助亚大气压化学气相沉积（SACVD）方法形成填充氧化硅沟槽填充层的间隙。最后，将衬底在含氧气氛中进行热退火以在沟槽内形成来自硅层的氧化硅层，其中氧化硅层与填充氧化硅沟槽填充层的致密化间隙连续，同时由间隙填充硅氧化物沟填充层。通过该方法，形成密集的间隙填充氧化硅沟槽填充层，而不具有表面灵敏度。

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