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    • 1. 发明申请
    • PLASMA PROCESSING APPARATUS
    • 等离子体加工设备
    • US20080308230A1
    • 2008-12-18
    • US12055680
    • 2008-03-26
    • Syuichi TAKAHASHIHiroki MatsumaruNobutaka NakaoKenji Komatsu
    • Syuichi TAKAHASHIHiroki MatsumaruNobutaka NakaoKenji Komatsu
    • H01L21/3065H01L21/683H02N13/00
    • H01L21/6831H01J37/32431H01J2237/2001H01L21/67109H02N13/00Y10T279/23
    • A plasma processing apparatus 1, in which a substrate W is mounted on a mounting table 11 in a processing chamber 10 and processing gas supplied in the processing chamber 10 is made into plasma to a perform plasma treatment on the substrate W, wherein the mounting table 11 has a mounting table body 12 having a temperature adjusted to be a predetermined level, and an electrostatic chuck 13 disposed on an upper portion of the mounting table body 12 and adsorbing the substrate W thereon; a first heat transfer gas diffusion region 47 is formed at a center of an upper surface of the electrostatic chuck 13 and a second heat transfer gas diffusion region 48 is formed at a circumferential edge of the upper surface of the electrostatic chuck 13; a first heat transfer gas supply unit 51 supplying heat transfer gas to the first heat transfer gas diffusion region 47 and a second heat transfer gas supply unit 52 supplying heat transfer gas to the second heat transfer gas diffusion region 48 are included; and a volume ratio of the second heat transfer gas diffusion region 48 to the first heat transfer gas diffusion region 47 is equal to or less than 0.1.
    • 等离子体处理装置1,其中将基板W安装在处理室10中的安装台11上,并且将处理室10中供应的处理气体制成等离子体以对基板W执行等离子体处理,其中安装台 11具有温度调节到预定水平的安装台主体12和设置在安装台主体12的上部并且吸附基板W的静电卡盘13; 在静电卡盘13的上表面的中心形成有第一传热气体扩散区域47,在静电卡盘13的上表面的周缘形成有第二传热气体扩散区域48。 包括向第一传热气体扩散区域47供给传热气体的第一传热气体供给单元51和向第二传热气体扩散区域48供给传热气体的第二传热气体供给单元52。 并且第二传热气体扩散区域48与第一传热气体扩散区域47的体积比等于或小于0.1。
    • 4. 发明申请
    • TAKE-UP TYPE VACUUM VAPOR DEPOSITION APPARATUS
    • 升降式真空蒸发器沉积装置
    • US20100006030A1
    • 2010-01-14
    • US12305387
    • 2007-06-07
    • Nobuhiro HayashiTakayoshi HironoIsao TadaAtsushi NakatsukaKenji Komatsu
    • Nobuhiro HayashiTakayoshi HironoIsao TadaAtsushi NakatsukaKenji Komatsu
    • C23C16/48C23C16/00
    • C23C14/562C23C14/02C23C14/5826
    • To provide a take up type vacuum vapor deposition apparatus capable of suppressing generation of a thermally-affected area on a film without lowering productivity. A take-up type vacuum vapor deposition apparatus according to the present invention includes: a payout roller configured to successively pay out a film ; a take-up roller configured to take up the film paid out from the payout roller; a cooling roller disposed between the payout roller and the take-up roller and configured to cool the film by coming into close contact with the film ; an evaporation source that faces the cooling roller and configured to deposit an evaporation material on the film; and an electron beam irradiator disposed between the payout roller and the evaporation source and configured to irradiate the film with an electron beam while the film is traveling. In the take-up type vacuum vapor deposition apparatus, the electron beam irradiator includes a filament configured to discharge electrons by electrical heating and DC generation means for supplying a direct current to the filament.
    • 提供能够抑制膜上的热影响区域的产生而不降低生产率的卷取式真空蒸镀装置。 根据本发明的卷取式真空蒸镀装置包括:延伸辊,其配置成连续地支付膜; 卷取辊,其构造成从所述支付辊上取出所述胶片; 冷却辊,其布置在所述支承辊和所述卷取辊之间,并且构造成通过与所述膜紧密接触来冷却所述膜; 蒸发源,其面向所述冷却辊并且构造成将蒸发材料沉积在所述膜上; 以及电子束照射器,其设置在所述分支辊和所述蒸发源之间并且被配置为在所述膜行进时用电子束照射所述膜。 在卷取式真空蒸镀装置中,电子束照射装置具备:通过电加热而放电的灯丝,以及向灯丝供给直流电的直流产生装置。
    • 5. 发明授权
    • Method for testing integrated circuit, and wafer
    • 集成电路和晶圆的测试方法
    • US07262617B2
    • 2007-08-28
    • US11493424
    • 2006-07-26
    • Kenji KomatsuAkira Nakajo
    • Kenji KomatsuAkira Nakajo
    • G01G31/02
    • G01R31/2891
    • A method for manufacturing an integrated circuit, a measurement apparatus of an integrated circuit, and a wafer that reduces damages inflicted on bonding pads while enabling a probe test to be accurately performed. A sensor cell is arranged on a wafer between chip formation regions. The sensor cell has a diaphragm. Sensor pads, connected to a doping region, are arranged on the surface of the diaphragm. Probe needles contact the sensor pads. This strains the doping region and produces a corresponding voltage measured by the probe needles connected to the sensor pads. Relative inclination angle and relative distance of a probe card, which includes the probe needles, and the wafer are determined based on the measured voltage. A conduction test is performed by having the probe needles contact the bonding pad of the wafer while maintaining the determined the relative position.
    • 集成电路的制造方法,集成电路的测量装置和晶片,其能够在能够精确地进行探针测试的同时降低对焊盘造成的损害。 传感器单元布置在芯片形成区域之间的晶片上。 传感器单元具有隔膜。 连接到掺杂区域的传感器焊盘布置在隔膜的表面上。 探头针接触传感器垫。 这会使掺杂区域变形,并产生由连接到传感器焊盘的探针测量的相应电压。 基于所测量的电压来确定探针卡(包括探针和晶片)的相对倾斜角度和相对距离。 通过使探头针与晶片的焊盘接触,同时保持确定的相对位置来进行导通测试。
    • 6. 发明授权
    • Magnetic pattern recognition method and apparatus
    • 磁图识别方法及装置
    • US5959279A
    • 1999-09-28
    • US837060
    • 1997-04-10
    • Kenji Komatsu
    • Kenji Komatsu
    • G06K9/20G06K7/08G06K17/00
    • G06K17/00G06K7/084G06K2017/0038
    • A magnetic pattern recognition method and apparatus capable of preventing magnetic noise from the pulse motor from affecting MICR character recognition processing while said pulse motor transports a document printed with MICR characters. The pulse motor is driven and noise signals detected by the magnetic head from a portion of the document not containing MICR characters are captured synchronized to the drive pulse. This is repeated for plural cycles to obtain the medium of plural signals as the compensation data. The raw detection signals detected by the magnetic head from another portion of the document containing MICR characters are then captured synchronized to the drive pulse. The compensation data is then subtracted from the raw detection signals to obtain the MICR character recognition data.
    • 一种能够防止来自脉冲电动机的磁噪声影响MICR字符识别处理的磁图案识别方法和装置,同时所述脉冲电机传送以MICR字符打印的文件。 脉冲电机被驱动,并且磁头从不包含MICR字符的文档的一部分检测到的噪声信号被捕获与驱动脉冲同步。 重复多个周期,以获得作为补偿数据的多个信号的介质。 然后,与包含MICR字符的文档的另一部分由磁头检测到的原始检测信号被同步到驱动脉冲。 然后从原始检测信号中减去补偿数据,以获得MICR字符识别数据。
    • 10. 发明授权
    • Semiconductor memory device having a plurality of memory blocks
    • 具有大量存储块的半导体存储器件
    • US5097450A
    • 1992-03-17
    • US515336
    • 1990-04-30
    • Haruki TodaKenji Komatsu
    • Haruki TodaKenji Komatsu
    • G11C11/401G11C8/12G11C8/18G11C11/407
    • G11C8/18G11C8/12
    • A semiconductor memory device comprises a plurality of memory blocks which are divided into a plurality of memory groups and which each include a plurality of memory cells and a plurality of word lines for selecting the memory cells, a plurality of row decoders, provided at least one for each of the memory groups, for selecting at least one of the word lines in the memory block in response to part of a word line selection address signal, and for biasing this selected word line with an input drive signal, and a drive signal generating circuit for generating a drive signal for driving the word line. This device further includes a drive signal selection circuit for selectively supplying a drive signal from the drive signal generating circuit to the row decoders corresponding to one of the memory groups specified by the remaining portion of the address signal.
    • 一种半导体存储器件包括被分成多个存储器组的多个存储器块,每个存储器块包括多个存储器单元和用于选择存储器单元的多个字线,多个行解码器,提供至少一个 对于每个存储器组,用于响应于字线选择地址信号的一部分选择存储器块中的至少一个字线,并且用于利用输入驱动信号偏置该选择的字线,以及产生驱动信号 用于产生用于驱动字线的驱动信号的电路。 该装置还包括驱动信号选择电路,用于从驱动信号产生电路选择性地将驱动信号提供给与由地址信号的剩余部分指定的存储器组之一相对应的行解码器。