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1. 发明申请

US20060263726A1 Pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20060263726A1
公开(公告)日：2006-11-23
申请号：US11431823
申请日：2006-05-11
申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
发明人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
摘要翻译：图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质，通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

2. 发明授权

US07794922B2 Pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US07794922B2
公开(公告)日：2010-09-14
申请号：US11431823
申请日：2006-05-11
申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
发明人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
IPC分类号： G03F7/26
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
摘要翻译：图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质，通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

3. 发明授权

US07968272B2 Semiconductor device manufacturing method to form resist pattern 失效
标题翻译：形成抗蚀剂图案的半导体器件制造方法
公开(公告)号：US07968272B2
公开(公告)日：2011-06-28
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03C5/04
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

4. 发明授权

US07687227B2 Resist pattern forming method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的抗蚀图案形成方法和制造方法
公开(公告)号：US07687227B2
公开(公告)日：2010-03-30
申请号：US11316898
申请日：2005-12-27
申请人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
发明人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
IPC分类号： G03F7/26
CPC分类号： G03F7/11 , G03F7/2041
摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.
摘要翻译：根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

5. 发明申请

US20070128554A1 Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus 失效
标题翻译：形成抗蚀剂图案的半导体器件制造方法以及基板处理装置
公开(公告)号：US20070128554A1
公开(公告)日：2007-06-07
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

6. 发明申请

US20070042297A1 Resist pattern forming method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的抗蚀图案形成方法和制造方法
公开(公告)号：US20070042297A1
公开(公告)日：2007-02-22
申请号：US11316898
申请日：2005-12-27
申请人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
发明人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
IPC分类号： G03F7/26
CPC分类号： G03F7/11 , G03F7/2041
摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.
摘要翻译：根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

7. 发明申请

US20060008746A1 Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060008746A1
公开(公告)日：2006-01-12
申请号：US11174720
申请日：2005-07-06
申请人： Yasunobu Onishi , Kenji Chiba , Daisuke Kawamura , Shinichi Ito , Koutaro Sho , Tomoyuki Takeishi
发明人： Yasunobu Onishi , Kenji Chiba , Daisuke Kawamura , Shinichi Ito , Koutaro Sho , Tomoyuki Takeishi
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/70341
摘要： The present application provides a method for manufacturing a semiconductor device, the method including forming a resist film on a substrate, forming a protective film on the resist film, exposing the resist film with a first liquid interposed between the protective film and a lens for exposure, removing the protective film using an oxidative second liquid after exposing the resist film, and developing the resist film to form a resist pattern after removing the protective film.
摘要翻译：本申请提供了一种制造半导体器件的方法，该方法包括在衬底上形成抗蚀剂膜，在抗蚀剂膜上形成保护膜，用保护膜和用于曝光的透镜之间的第一液体暴露抗蚀剂膜在曝光抗蚀剂膜之后使用氧化性第二液体除去保护膜，并且在除去保护膜之后使抗蚀剂膜显影以形成抗蚀剂图案。

8. 发明申请

US20110229826A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于形成电阻图案的半导体器件制造方法和基板处理装置
公开(公告)号：US20110229826A1
公开(公告)日：2011-09-22
申请号：US13118779
申请日：2011-05-31
申请人： Daisuke KAWAMURA , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke KAWAMURA , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

9. 发明申请

US20070190462A1 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20070190462A1
公开(公告)日：2007-08-16
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

10. 发明申请

US20070188733A1 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20070188733A1
公开(公告)日：2007-08-16
申请号：US11654566
申请日：2007-01-18
申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura
发明人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura
IPC分类号： G03B27/32
CPC分类号： G03D3/08 , G03B27/42 , G03F7/70341
摘要： A manufacturing method of a semiconductor device including a liquid immersion movement exposure of interposing a liquid between an exposure target substrate and a projection optical system of an exposure apparatus, and carrying out an exposure processing with respect to a plurality of exposure regions set on a surface of the substrate while relatively moving the substrate with respect to the system, a first liquid immersion movement of relatively moving the substrate with respect to the system while interposing the liquid between the substrate and the system, in adjacent exposure regions of said each exposure region, and a second liquid immersion movement of relatively moving the substrate with respect to the system at a speed lower than a movement speed in the first movement, while interposing the liquid between the substrate and the system, in a distance that is longer than a movement distance in the first movement.
摘要翻译：一种半导体器件的制造方法，包括在曝光对象基板和曝光装置的投影光学系统之间插入液体的液浸式移动曝光，并对相对于设置在表面上的多个曝光区域进行曝光处理在相对于所述系统相对移动所述衬底的同时，在所述每个曝光区域的相邻曝光区域中相对于所述衬底相对地移动所述衬底同时在所述衬底和所述系统之间插入液体的第一液浸动作，以及第二液浸移动，其以比第一移动中的移动速度低的速度相对于所述系统移动所述基板，同时在所述基板和所述系统之间以比移动距离长的距离在第一动作。

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