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    • 3. 发明授权
    • Method and device to establish viewing zones and to inspect products
using viewing zones
    • 建立观察区和使用观察区检查产品的方法和设备
    • US5764536A
    • 1998-06-09
    • US574692
    • 1995-12-19
    • Norihito YamamotoYukiya SawanoiKoichi Tanaka
    • Norihito YamamotoYukiya SawanoiKoichi Tanaka
    • G06T7/00G06K9/00
    • G06T7/0006G06T2207/10152G06T2207/30152
    • In a device used to inspect substrates visually, an imaging region and a magnification are specified ahead of time for every component and stored as library data in a memory. The memory also contains CAD data, which include the class of each component on the substrate and its location. During initialization, a control unit links the location data for a component extracted from the CAD data to corresponding library data and specifies a field of view and a magnification for every component on the substrate. Using this data, the control unit creates on the substrate a number of viewing zones to be inspected at various magnifications and stores the data specifying these zones in the memory. When a substrate is to be inspected, the control unit uses the data specifying these zones to control the position and magnification of an imaging unit to collect image data from each zone successively and display them on a monitor.
    • 在用于视觉检查底物的装置中,针对每个组件提前指定成像区域和放大倍数,并将其作为库数据存储在存储器中。 存储器还包含CAD数据,其中包括衬底上每个组件的类别及其位置。 在初始化期间,控制单元将从CAD数据提取的部件的位置数据链接到对应的库数据,并且指定基板上的每个部件的视场和放大倍数。 使用该数据,控制单元在基板上创建多个待检查的观看区域,并以指定这些区域的数据存储在存储器中。 当检查基板时,控制单元使用指定这些区域的数据来控制成像单元的位置和放大率,从而连续地从每个区域收集图像数据并将其显示在监视器上。
    • 5. 发明授权
    • Method for reducing the thickness of an SOI layer
    • 降低SOI层厚度的方法
    • US09064929B2
    • 2015-06-23
    • US12153519
    • 2008-05-20
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKoichi TanakaMakoto KawaiYuuji Tobisaka
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKoichi TanakaMakoto KawaiYuuji Tobisaka
    • H01L21/762H01L21/3065H01L21/66
    • H01L21/76254H01L21/3065H01L22/12H01L22/20H01L2924/014
    • There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.
    • 公开了一种用于制造SOI晶片的方法,包括:将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚,从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤,其中所述蚀刻步骤包括:执行粗蚀刻的阶段,如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布,进行干蚀刻的精确蚀刻的阶段。 可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。