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1. 发明申请

US20090134451A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090134451A1
公开(公告)日：2009-05-28
申请号：US12292543
申请日：2008-11-20
申请人： Seung-Jae Baik , Jin-Tae Noh , Hong-Suk Kim , In-Sun Yi , Si-Young Choi , Ki-Hyun Hwang
发明人： Seung-Jae Baik , Jin-Tae Noh , Hong-Suk Kim , In-Sun Yi , Si-Young Choi , Ki-Hyun Hwang
IPC分类号： H01L29/792
CPC分类号： H01L29/7881 , B82Y10/00 , G11C2216/06 , H01L27/115 , H01L27/11521 , H01L27/11565 , H01L27/11568 , H01L29/42332 , H01L29/42348 , H01L29/792
摘要： An example embodiment of a non-volatile memory device and an example embodiment of a method of fabricating the same are provided. The non-volatile memory devices includes a tunnel insulation layer on a semiconductor substrate, a charge storage layer on the tunnel insulation layer, a blocking insulation layer including at least one nano dot on the charge storage layer, and a control gate electrode on the blocking insulation layer.
摘要翻译：提供非易失性存储器件的示例性实施例及其制造方法的示例性实施例。非易失性存储器件包括在半导体衬底上的隧道绝缘层，隧道绝缘层上的电荷存储层，在电荷存储层上包括至少一个纳米点的阻挡绝缘层，以及阻挡层上的控制栅电极绝缘层。

2. 发明授权

US08114735B2 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US08114735B2
公开(公告)日：2012-02-14
申请号：US11902209
申请日：2007-09-20
申请人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yi
发明人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yi
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/28185 , H01L21/28194 , H01L21/28282 , H01L21/3185 , H01L29/4234 , H01L29/518 , H01L29/7923
摘要： In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.
摘要翻译：在制造非易失性存储器件的方法中，隧道绝缘层可以形成在衬底的沟道区上。可以在隧道绝缘层上形成包括氮化硅的电荷俘获层，以从沟道区捕获电子。可以使用包括氮气的第一气体和包括氧的第二气体来进行热处理，以去除电荷捕获层中的缺陷位点并致密化电荷捕获层。可以在热处理的电荷俘获层上形成阻挡层，然后可以在阻挡层上形成导电层。阻挡层，导电层，热处理电荷捕获层和隧道绝缘层可以被图案化以在沟道区上形成栅极结构。因此，可以提高包括门结构的非易失性存储器件的数据保持性能和/或可靠性。

3. 发明申请

US20110237059A1 Non-volatile memory devices with multiple layers having band gap relationships among the layers 有权
标题翻译：具有层之间具有带隙关系的多层的非易失性存储器件
公开(公告)号：US20110237059A1
公开(公告)日：2011-09-29
申请号：US13067405
申请日：2011-05-31
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L21/28
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

4. 发明申请

US20080070368A1 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20080070368A1
公开(公告)日：2008-03-20
申请号：US11902209
申请日：2007-09-20
申请人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yl
发明人： Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Han-Mei Choi , Seung-Hwan Lee , Seung-Jae Baik , Sun-Jung Kim , Kwang-Min Park , In-Sun Yl
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L29/792 , H01L21/28185 , H01L21/28194 , H01L21/28282 , H01L21/3185 , H01L29/4234 , H01L29/518 , H01L29/7923
摘要： In a method of manufacturing a non-volatile memory device, a tunnel insulating layer may be formed on a channel region of a substrate. A charge trapping layer including silicon nitride may be formed on the tunnel insulating layer to trap electrons from the channel region. A heat treatment may be performed using a first gas including nitrogen and a second gas including oxygen to remove defect sites in the charge trapping layer and to densify the charge trapping layer. A blocking layer may be formed on the heat-treated charge trapping layer, and a conductive layer may then formed on the blocking layer. The blocking layer, the conductive layer, the heat-treated charge trapping layer and the tunnel insulating layer may be patterned to form a gate structure on the channel region. Accordingly, data retention performance and/or reliability of a non-volatile memory device including the gate structure may be improved.
摘要翻译：在制造非易失性存储器件的方法中，隧道绝缘层可以形成在衬底的沟道区上。可以在隧道绝缘层上形成包括氮化硅的电荷俘获层，以从沟道区捕获电子。可以使用包括氮气的第一气体和包括氧的第二气体来进行热处理，以去除电荷捕获层中的缺陷位点并致密化电荷捕获层。可以在热处理的电荷俘获层上形成阻挡层，然后可以在阻挡层上形成导电层。阻挡层，导电层，热处理电荷捕获层和隧道绝缘层可以被图案化以在沟道区上形成栅极结构。因此，可以提高包括门结构的非易失性存储器件的数据保持性能和/或可靠性。

5. 发明授权

US08460999B2 Non-volatile memory devices with multiple layers having band gap relationships among the layers 有权
标题翻译：具有层之间具有带隙关系的多层的非易失性存储器件
公开(公告)号：US08460999B2
公开(公告)日：2013-06-11
申请号：US13067405
申请日：2011-05-31
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

6. 发明授权

US07973355B2 Nonvolatile memory devices with multiple layers having band gap relationships among the layers 有权
标题翻译：具有层之间具有带隙关系的多层的非易失性存储器件
公开(公告)号：US07973355B2
公开(公告)日：2011-07-05
申请号：US12216945
申请日：2008-07-14
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

7. 发明申请

US20090014781A1 Nonvolatile memory devices and methods for fabricating nonvolatile memory devices 有权
标题翻译：用于制造非易失性存储器件的非易失存储器件和方法
公开(公告)号：US20090014781A1
公开(公告)日：2009-01-15
申请号：US12216945
申请日：2008-07-14
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序地堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

8. 发明授权

US07622383B2 Methods of forming conductive polysilicon thin films via atomic layer deposition and methods of manufacturing semiconductor devices including such polysilicon thin films 有权
标题翻译：通过原子层沉积形成导电多晶硅薄膜的方法和制造包括这种多晶硅薄膜的半导体器件的方法
公开(公告)号：US07622383B2
公开(公告)日：2009-11-24
申请号：US11421111
申请日：2006-05-31
申请人： Jin-Gyun Kim , Ki-Hyun Hwang , Jin-Tae Noh , Hong-Suk Kim , Sung-Hae Lee
发明人： Jin-Gyun Kim , Ki-Hyun Hwang , Jin-Tae Noh , Hong-Suk Kim , Sung-Hae Lee
IPC分类号： H01L21/44
CPC分类号： H01L27/11521 , C23C16/24 , C23C16/45527 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/28273 , H01L21/28525 , H01L27/115 , H01L29/66825
摘要： A method of forming a conductive polysilicon thin film and a method of manufacturing a semiconductor device using the same are provided. The method of forming a conductive polysilicon thin film may comprise simultaneously supplying a Si precursor having halogen elements as a first reactant and a dopant to a substrate to form a first reactant adsorption layer that is doped with impurities on the substrate and then supplying a second reactant having H (hydrogen) to the first reactant adsorption layer to react the H of the second reactant with the halogen elements of the first reactant to form a doped Si atomic layer on the substrate.
摘要翻译：提供一种形成导电多晶硅薄膜的方法和使用其制造半导体器件的方法。形成导电多晶硅薄膜的方法可以包括同时向衬底提供具有卤素元素的Si前体作为第一反应物和掺杂剂以形成在衬底上掺杂杂质的第一反应物吸附层，然后提供第二反应物对第一反应物吸附层具有H（氢）以使第二反应物的H与第一反应物的卤素元素反应，以在衬底上形成掺杂的Si原子层。

9. 发明申请

US20070042573A1 Methods of Forming Conductive Polysilicon Thin Films Via Atomic Layer Deposition and Methods of Manufacturing Semiconductor Devices Including Such Polysilicon Thin Films 有权
标题翻译：通过原子层沉积形成导电多晶硅薄膜的方法和制造包括这种多晶硅薄膜的半导体器件的方法
公开(公告)号：US20070042573A1
公开(公告)日：2007-02-22
申请号：US11421111
申请日：2006-05-31
申请人： Jin-Gyun Kim , Ki-Hyun Hwang , Jin-Tae Noh , Hong-Suk Kim , Sung-Hae Lee
发明人： Jin-Gyun Kim , Ki-Hyun Hwang , Jin-Tae Noh , Hong-Suk Kim , Sung-Hae Lee
IPC分类号： H01L21/20
CPC分类号： H01L27/11521 , C23C16/24 , C23C16/45527 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/28273 , H01L21/28525 , H01L27/115 , H01L29/66825
摘要： A method of forming a conductive polysilicon thin film and a method of manufacturing a semiconductor device using the same are provided. The method of forming a conductive polysilicon thin film may comprise simultaneously supplying a Si precursor having halogen elements as a first reactant and a dopant to a substrate to form a first reactant adsorption layer that is doped with impurities on the substrate and then supplying a second reactant having H (hydrogen) to the first reactant adsorption layer to react the H of the second reactant with the halogen elements of the first reactant to form a doped Si atomic layer on the substrate.
摘要翻译：提供一种形成导电多晶硅薄膜的方法和使用其制造半导体器件的方法。形成导电多晶硅薄膜的方法可以包括同时向衬底提供具有卤素元素的Si前体作为第一反应物和掺杂剂以形成在衬底上掺杂杂质的第一反应物吸附层，然后提供第二反应物对第一反应物吸附层具有H（氢）以使第二反应物的H与第一反应物的卤素元素反应，以在衬底上形成掺杂的Si原子层。

10. 发明申请

US20070063255A1 Non-volatile memory device and method of manufacturing the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20070063255A1
公开(公告)日：2007-03-22
申请号：US11492733
申请日：2006-07-25
申请人： Jae-Young Ahn , Ki-Hyan Hwang , Jin-Tae Noh , Hong-Suk Kim , Sung-Hae Lee
发明人： Jae-Young Ahn , Ki-Hyan Hwang , Jin-Tae Noh , Hong-Suk Kim , Sung-Hae Lee
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L29/7883 , H01L29/42332 , H01L29/66833
摘要： In non-volatile memory devices and methods of manufacturing the non-volatile memory devices, a barrier layer having an upper portion of silicon nitride and a lower portion of silicon oxide is formed on a substrate by providing a silicon oxide layer on the substrate and performing a radical nitridation process on an upper portion of the silicon oxide layer. A trapping layer including silicon nitride is formed on the barrier layer. A blocking layer and a gate electrode layer are subsequently formed on the trapping layer. The gate electrode layer, the blocking layer, the trapping layer and the barrier layer are then partially etched to provide a gate structure.
摘要翻译：在非易失性存储器件和制造非易失性存储器件的方法中，在衬底上形成具有氮化硅上部和氧化硅下部的阻挡层，在衬底上提供氧化硅层并执行在氧化硅层的上部进行自由基氮化处理。在阻挡层上形成包括氮化硅的捕获层。随后在捕获层上形成阻挡层和栅极电极层。然后对栅极电极层，阻挡层，捕获层和阻挡层进行部分蚀刻以提供栅极结构。

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