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1. 发明申请

US20130198589A1 METHOD OF OPERATING MEMORY CONTROLLER AND MEMORY SYSTEM INCLUDING THE MEMORY CONTROLLER 失效
标题翻译：操作存储器控制器的方法和包括存储器控制器的存储器系统
公开(公告)号：US20130198589A1
公开(公告)日：2013-08-01
申请号：US13612074
申请日：2012-09-12
申请人： Seong Hyeog CHOI , Jun Jin KONG , Hong Rak SON
发明人： Seong Hyeog CHOI , Jun Jin KONG , Hong Rak SON
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： G06F11/1072 , G06F11/108 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： According to example embodiments, a method of controlling a memory controller includes executing an error correction code (ECC) on first page data that has been read from a non-volatile memory device using a first read voltage level, estimating a second read voltage level for reading the first page data using metadata of second page data when an uncorrectable error is detected in the first page data according to a result of executing the ECC.
摘要翻译：根据示例实施例，一种控制存储器控制器的方法包括：对使用第一读取电压电平从非易失性存储器件读取的第一页数据执行纠错码（ECC），估计第二读取电压电平根据执行ECC的结果在第一页数据中检测到不可校正的错误时，使用第二页数据的元数据读取第一页数据。

2. 发明申请

US20120084490A1 METHOD FOR CHANGING READ PARAMETER FOR IMPROVING READ PERFORMANCE AND APPARATUSES USING THE SAME 有权
标题翻译：改进读取参数的方法，以改进阅读性能和使用它的设备
公开(公告)号：US20120084490A1
公开(公告)日：2012-04-05
申请号：US13238749
申请日：2011-09-21
申请人： Seong Hyeog CHOI , Hong Rak SON , Kyoung Lae CHO , Jun Jin KONG , Sang Hoon LEE
发明人： Seong Hyeog CHOI , Hong Rak SON , Kyoung Lae CHO , Jun Jin KONG , Sang Hoon LEE
IPC分类号： G06F12/00
CPC分类号： G11C16/02 , G06F13/00 , G11C11/5642 , G11C16/00 , G11C16/06 , G11C16/3418 , G11C16/349 , G11C29/42
摘要： A memory system including a non-volatile memory device and a memory controller is provided. When a read operation on a first data initially output from the non-volatile memory device during a first read operation is successful, the memory controller may change a read voltage for reading a second data stored in the non-volatile memory device during a second read operation.
摘要翻译：提供了包括非易失性存储器件和存储器控制器的存储器系统。当在第一次读取操作期间最初从非易失性存储器件输出的第一数据的读取操作成功时，存储器控制器可以在第二次读取期间改变用于读取存储在非易失性存储器件中的第二数据的读取电压操作。

3. 发明申请

US20160210083A1 METHODS OF OPERATING MEMORY SYSTEMS FOR SUB-BLOCK ERASE OPERATION 有权
标题翻译：操作用于子块擦除操作的存储器系统的方法
公开(公告)号：US20160210083A1
公开(公告)日：2016-07-21
申请号：US15001275
申请日：2016-01-20
申请人： Eun Chu OH , Hong Rak SON , Jun Jin KONG , Seong Hyeog CHOI
发明人： Eun Chu OH , Hong Rak SON , Jun Jin KONG , Seong Hyeog CHOI
IPC分类号： G06F3/06
CPC分类号： G06F3/0652 , G06F3/0614 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0673 , G06F3/0679 , G06F3/0688
摘要： A method of operating a memory system including memory blocks, each including memory cells and divided into at least first and second sub-blocks. The method includes performing a program operation on memory cells connected to at least one word line of the first and second sub-blocks using a first program method of programming data having a first number of bits, performing an erase operation on the first sub-block, and detecting a state of distribution of threshold voltages of memory cells of the first and second sub-blocks, and determining whether a program operation is to be performed on memory cells connected to a second adjacent word line including at least one word line adjacent to the first sub-block, out of the memory cells of the second sub-block, by using a second program method of programming data having a second number of bits, based on the detecting.
摘要翻译：一种操作包括存储器块的存储器系统的方法，每个存储器块包括存储器单元并被分成至少第一和第二子块。该方法包括使用编程具有第一位数的数据的第一编程方法对连接到第一和第二子块的至少一个字线的存储器单元执行编程操作，对第一子块执行擦除操作并且检测第一和第二子块的存储器单元的阈值电压的分布状态，并且确定是否对连接到第二相邻字线的存储器单元执行编程操作，该第二相邻字线包括与...相邻的至少一个字线基于检测，通过使用具有第二位数的数据的第二编程方法，在第二子块的存储单元之外的第一子块。

4. 发明申请

US20120221775A1 NON-VOLATILE MEMORY DEVICE AND READ METHOD THEREOF 有权
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US20120221775A1
公开(公告)日：2012-08-30
申请号：US13407333
申请日：2012-02-28
申请人： Yong June KIM , Hong Rak SON , Jae Hong KIM , Sang Yong YOON , Ki Jun LEE , Jung Soo CHUNG , Seong Hyeog CHOI
发明人： Yong June KIM , Hong Rak SON , Jae Hong KIM , Sang Yong YOON , Ki Jun LEE , Jung Soo CHUNG , Seong Hyeog CHOI
IPC分类号： G06F12/00
CPC分类号： G06F21/00 , G06F11/1012 , G06F11/108 , G06F12/00 , G06F12/14 , G11C11/00 , G11C11/5642 , G11C16/26 , G11C16/3418
摘要： An apparatus and a method for reading from a non-volatile memory whereby soft decision data is used to determine the reliability of hard decision data. The hard decision data read from the non-volatile memory is de-randomized and the soft decision data read from the non-volatile memory is not de-randomized. Using the soft decision data, the hard decision data is decoded.
摘要翻译：一种用于从非易失性存储器读取的装置和方法，由此使用软判决数据来确定硬判决数据的可靠性。从非易失性存储器读取的硬判决数据被去随机化，并且从非易失性存储器读取的软判决数据不被去随机化。使用软判决数据，硬判决数据被解码。

5. 发明申请

US20180286495A1 NONVOLATILE MEMORY STORAGE SYSTEM 审中-公开
公开(公告)号：US20180286495A1
公开(公告)日：2018-10-04
申请号：US15475670
申请日：2017-03-31
申请人： Eun Chu OH , Pilsang YOON , Jun Jin KONG , Hong Rak SON , Dongsup JIN
发明人： Eun Chu OH , Pilsang YOON , Jun Jin KONG , Hong Rak SON , Dongsup JIN
IPC分类号： G11C29/50 , G11C16/04 , G11C16/26 , G11C16/10
CPC分类号： G11C29/50004 , G11C11/5642 , G11C16/0466 , G11C16/0483 , G11C16/26 , G11C29/021 , G11C29/028 , G11C2029/5004
摘要： A nonvolatile memory storage system includes a plurality of memory cells and a memory controller configured to transmit a read command to a nonvolatile memory device based on a plurality of read voltages. The nonvolatile memory device performs a first read operation on a first level among the N levels based on a first read voltage among the plurality of read voltages, counts the number of on-cells that respond to the first read voltage among the plurality of memory cells, and adjusts a level of a second read voltage to be used to perform a second read operation on the first level or a second level among the N levels among the plurality of read voltages according to a comparison result of the counted number of on-cells and the number of reference cells.

6. 发明申请

US20110276777A1 DATA STORAGE DEVICE AND RELATED METHOD OF OPERATION 有权
标题翻译：数据存储装置及相关操作方法
公开(公告)号：US20110276777A1
公开(公告)日：2011-11-10
申请号：US13096036
申请日：2011-04-28
申请人： Kyoung Lae CHO , Kwang Ho KIM , Jun Jin KONG , Jaehong KIM , Hong Rak SON
发明人： Kyoung Lae CHO , Kwang Ho KIM , Jun Jin KONG , Jaehong KIM , Hong Rak SON
IPC分类号： G06F12/10
CPC分类号： H03M7/30
摘要： A method of storing data in a storage medium of a data storage device comprises storing input data in the storage medium, and reading the input data from the storage medium and compressing the read data during a background operation of the data storage device.
摘要翻译：一种在数据存储装置的存储介质中存储数据的方法包括将输入数据存储在存储介质中，并且在数据存储装置的后台操作期间从存储介质读取输入数据并压缩读取的数据。

7. 发明申请

US20100296350A1 METHOD OF SETTING READ VOLTAGE MINIMIZING READ DATA ERRORS 有权
标题翻译：设置读取电压最小化读取数据错误的方法
公开(公告)号：US20100296350A1
公开(公告)日：2010-11-25
申请号：US12774814
申请日：2010-05-06
申请人： Yong June KIM , Jae Hong KIM , Jun Jin KONG , Hong Rak SON , Seung-Hwan SONG
发明人： Yong June KIM , Jae Hong KIM , Jun Jin KONG , Hong Rak SON , Seung-Hwan SONG
IPC分类号： G11C7/06
CPC分类号： G11C11/5642 , G11C29/00 , G11C2211/5634
摘要： A method setting a read voltage to minimize data read errors in a semiconductor memory device including multi-bit memory cells. In the method, a read voltage associated with a minimal number of read data error is set based on a statistic value of a voltage distribution corresponding to each one of a plurality of voltage states.
摘要翻译：一种设置读取电压以最小化包括多位存储器单元的半导体存储器件中的数据读取错误的方法。在该方法中，基于与多个电压状态中的每一个相对应的电压分布的统计值来设置与最小数量的读取数据错误相关联的读取电压。

8. 发明申请

US20140281279A1 NONVOLATILE MEMORY DEVICE AND DATA MANAGEMENT METHOD THEREOF 有权
标题翻译：非易失性存储器件及其数据管理方法
公开(公告)号：US20140281279A1
公开(公告)日：2014-09-18
申请号：US14206269
申请日：2014-03-12
申请人： Eun Chu OH , Junjin KONG , Hong Rak SON , Younggeon YOO
发明人： Eun Chu OH , Junjin KONG , Hong Rak SON , Younggeon YOO
IPC分类号： G06F3/06
CPC分类号： G06F3/0655 , G06F3/0604 , G06F3/0679 , G11C7/1006 , G11C7/14 , G11C11/1653 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C16/26 , G11C2013/0054
摘要： A data management method of a nonvolatile memory device which includes a data cell area and a reference cell area includes selecting shared data from write data input to the memory device; generating reference data based on the shared data; and storing the write data in the data cell area and a first reference area of the reference cell area; and storing the reference data in a second reference area of the reference cell area.
摘要翻译：包括数据单元区域和参考单元区域的非易失性存储器件的数据管理方法包括从输入到存储器件的写入数据中选择共享数据; 基于共享数据生成参考数据; 并将写入数据存储在数据单元区域和参考单元区域的第一参考区域中; 并将参考数据存储在参考小区区域的第二参考区域中。

9. 发明申请

US20140355348A1 FLASH MEMORY SYSTEM AND WORD LINE INTERLEAVING METHOD THEREOF 审中-公开
标题翻译：闪存存储器系统及其线路交换方法
公开(公告)号：US20140355348A1
公开(公告)日：2014-12-04
申请号：US14459736
申请日：2014-08-14
申请人： Yongjune KIM , Hong Rak SON , Seonghyeog CHOI , Junjin KONG
发明人： Yongjune KIM , Hong Rak SON , Seonghyeog CHOI , Junjin KONG
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C16/10 , G11C16/0483 , H01L27/1157 , H01L27/11582
摘要： Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.
摘要翻译：提供一种闪速存储器系统及其字线交错方法。闪存系统包括存储单元阵列和字线交错逻辑。存储单元阵列连接到多个字线。字线（WL）交织逻辑对与至少两个不同字线对应的WL数据和包括交错数据的编程数据执行对存储单元阵列的交织操作。

10. 发明申请

US20160011807A1 STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE 有权
标题翻译：存储设备的存储设备和操作方法
公开(公告)号：US20160011807A1
公开(公告)日：2016-01-14
申请号：US14640653
申请日：2015-03-06
申请人： Changkyu SEOL , Junjin KONG , JongHa KIM , Hyejeong SO , Hong Rak SON , Seonghyeog CHOI
发明人： Changkyu SEOL , Junjin KONG , JongHa KIM , Hyejeong SO , Hong Rak SON , Seonghyeog CHOI
IPC分类号： G06F3/06
CPC分类号： G11C16/10 , G11C7/1006 , G11C11/5628 , G11C16/102
摘要： The operating method of the storage device includes receiving write data to be written at the plurality of memory cells; determining whether the received write data is LSB data to be written at the plurality of memory cells; and encoding the write data according to the determination. The write data is encoded according to the write data when the write data is LSB data to be written at the plurality of memory cells. The write data is encoded according to the write data and encoding data of lower data of the write data to be written at the plurality of memory cells when the write data is not LSB data to be written at the plurality of memory cells.
摘要翻译：存储装置的操作方法包括：接收要写入多个存储单元的写入数据; 确定所接收的写入数据是否要被写入所述多个存储器单元的LSB数据; 以及根据确定对写入数据进行编码。当写入数据是要写入多个存储器单元的LSB数据时，根据写入数据对写入数据进行编码。当写入数据不是要写入多个存储器单元的LSB数据时，写数据根据写数据和要写入多个存储单元的写数据的较低数据的编码数据进行编码。

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