专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3195900A4 STERILIZING APPARATUS 无效
标题翻译： STERILISATIONSVORRICHTUNG
公开(公告)号：EP3195900A4
公开(公告)日：2017-09-13
申请号：EP15842195
申请日：2015-06-29
申请人： SHARP KK
发明人： MORI JUN , SMEETON TIM MICHAEL
IPC分类号： A61N5/067 , A61L2/10 , A61N5/06
CPC分类号： A61L2/0047 , A61N5/06 , A61N5/0601 , A61N5/0613 , A61N5/0624 , A61N2005/063 , A61N2005/0643 , A61N2005/0647 , A61N2005/0661 , A61N2005/067
摘要： A sterilizing apparatus having both excellent safety and operability is provided. A sterilizing apparatus (1) according to an aspect for carrying out the present invention is a sterilizing apparatus (1) that radiates light including ultraviolet rays onto an affected area (6), wherein first wavelength light (L »1 ) having a peak wavelength in a wavelength range of 190 nm or more and 230 nm or less, and second wavelength light (L »2 ) having a peak wavelength in a wavelength range of 400 nm or more and 780 nm or less are emitted.
摘要翻译：提供具有优异的安全性和可操作性的消毒装置。本发明的一个实施方式的杀菌装置（1）是对患部（6）照射包含紫外线的光的杀菌装置（1），其中，具有峰值波长的第一波长光（L 1）在190nm以上且230nm以下的波长范围内发射具有在400nm以上且780nm以下的波长范围内的峰值波长的第二波长光（L >> 2）。

2. 发明公开

EP3183560A4 Sensor and System for Measuring a Concentration 无效
公开(公告)号：EP3183560A4
公开(公告)日：2017-11-15
申请号：EP15834227
申请日：2015-08-21
申请人： SHARP KK
发明人： SMEETON TIM MICHAEL , BOARDMAN EDWARD ANDREW , MORI JUN
IPC分类号： G01N21/33 , G01N33/18
CPC分类号： G01N33/188 , G01N21/33 , G01N21/532 , G01N21/59 , G01N21/85 , G01N2021/3188

3. 发明专利

GB2456756A AlInGaN Light-Emitting devices 未知
公开(公告)号：GB2456756A
公开(公告)日：2009-07-29
申请号：GB0800742
申请日：2008-01-16
申请人： SHARP KK
发明人： SMITH KATHERINE LOUISE , SENES MATHIEU XAVIER , SMEETON TIM MICHAEL , HOOPER STEWART EDWARD
IPC分类号： H01L33/08 , H01L33/32 , H01S5/343
摘要： A semiconductor light-emitting device fabricated with the AlGalnN materials system has an active region for light emission 3 comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer 6 is provided on a substrate side of the active region which improves carrier injection into the quantum dots and increases the optical output of the light-emitting device.

4. 发明公开

EP3183559A4 MEASUREMENT DEVICE AND METHOD OF MEASURING A CONCENTRATION OF A COMPONENT OF A GAS MIXTURE 审中-公开
标题翻译： MESSVORGHHTUNG UND VERFAHREN ZUR MESSUNG EINER KONZENTRATION EINER KOMPONENTE EINES GASGEMISCHES
公开(公告)号：EP3183559A4
公开(公告)日：2017-07-12
申请号：EP15833339
申请日：2015-08-21
申请人： SHARP KK
发明人： RIHANI SAMIR , SMEETON TIM MICHAEL
IPC分类号： G01N21/33 , A61B5/08 , A61B10/00 , G01N21/03 , G01N21/05 , G01N21/31 , G01N21/64 , G01N33/497
CPC分类号： G01N33/497 , A61B5/082 , G01N21/0303 , G01N21/031 , G01N21/0332 , G01N21/05 , G01N21/27 , G01N21/314 , G01N21/33 , G01N21/645 , G01N21/6486 , G01N2021/052 , G01N2021/3181 , G01N2021/6469 , G01N2033/4975 , G01N2201/062 , G01N2201/0627

5. 发明专利

GB2482311A II-III-N and II-N semiconductor nanoparticles, comprising the Group II elements Zinc (Zn) or Magensium (Mg) 未知
公开(公告)号：GB2482311A
公开(公告)日：2012-02-01
申请号：GB201012644
申请日：2010-07-28
申请人： SHARP KK
发明人： TAYLOR PETER NEIL , HEFFERNAN JONATHAN , HOOPER STEWART EDWARD , SMEETON TIM MICHAEL
IPC分类号： H01L33/32 , H01L31/18 , H01L33/26
摘要： The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a compound semiconductor family of the type group II-Ill-N or II-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAIN, ZnAIGaN, ZnAIInN,, ZnAIGaInN or MgInN. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. For example figure 4 (shown) gives the measured photoluminescence emission spectroscopic output for ZnInN semiconductor nanocrystals, in which the reacton time is controlled. The effect of the reaction time is to lower the peak wavelength of photoluminescence intensity. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated, with reported photoluminescence quantum yields in the range 10% to greater than 50%. A method is also included whereby the semiconductor nanoparticles are produced by reacting at least a source of a group II element, at least a source of a source of a group III element and at least a source of nitrogen. For example ZnInN is formed by heating at 250deg C Indium iodide, sodium amide, hexadecane thiol, zinc stearate and diphenyl ether for up to an hour. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.

6. 发明专利

GB2451884A A Semiconductor Device and a Method of Manufacture Thereof 未知
公开(公告)号：GB2451884A
公开(公告)日：2009-02-18
申请号：GB0715993
申请日：2007-08-16
申请人： SHARP KK
发明人： SMEETON TIM MICHAEL , SMITH KATHERINE LOUISE
IPC分类号： H01L21/20 , H01L29/12 , H01L31/0352 , H01L33/06 , H01S5/34
摘要： A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface (1). The semiconductor surface has at least one first region (2) having a first value of average surface lattice parameter and at least one second region (3) having a second value of average surface lattice parameter different from the first value. The semiconductor layer is deposited to a thickness such that self-organised islands (6,7) form over both the at least one first region (2) and the at least one second region (3). The difference in the average surface lattice parameter between the two regions means that the self-organised islands over the first region have a first average value of a parameter (such as height, width, shape, etc.) and the self-organised islands over the second region have a second average value of the parameter different from the first value. A capping layer (8) is then deposited over the self-organised islands (6,7). The capping layer (8) has a greater forbidden bandgap than the self-organised islands whereby the self-organised islands form quantum dots. The quantum dots over the first region have different properties, for example different optical properties, from the quantum dots over the second region as a consequence of the difference(s) between the self-organised islands over the first region and the self-organised islands over the second region. The device can be a light-emitting, a light-sensitive or a memory device.

7. 发明专利

GB2483689A A method of reducing the density of threading dislocations in light emitting devices, by the selective creation of cavities 未知
公开(公告)号：GB2483689A
公开(公告)日：2012-03-21
申请号：GB201015518
申请日：2010-09-16
申请人： SHARP KK
发明人： SMEETON TIM MICHAEL , SENES MATHIEU XAVIER , TAN WEI-SIN , BERRYMAN-BOUSQUET VALERIE
IPC分类号： H01L33/02 , H01L33/00
摘要： A semiconductor light-emitting device comprises a substrate 101 and a semiconductor layer structure disposed over the substrate. The device particularly relates to Nitride based LEDâ s or lasers, in particular (Al,In,Ga)N deposited on sapphire, silicon, silicon carbide or GaN substrates. The layer structure includes a first layer 102 disposed over the substrate, a second layer 105, and an active region 104 for light emission disposed between the first layer 102 and the second layer 105. One or more cavities 108 are present in the layer structure, each cavity coincident with a respective threading dislocation 103 of at least a first type that extends generally through the layer structure, and a cavity extending from an upper surface of the layer structure through at least the second layer 105 and the active region 104. By removing material at the location of a dislocation, the invention provides effective suppression of the tendency of the threading dislocations to act as non-radiative centers, which improves the light output efficiency. The device may be manufactured by a two-stage method that has a first etching step of selectively etching the layer structure at one or more locations at which a respective threading dislocation is present thereby to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of the or each pilot cavity to produce a respective cavity 108 that extends at least through the second layer 105 and the active region 104.

8. 发明专利

GB2482312A II-III-V semiconductor material, comprising the Group II elements Zn or Mg, Group III elements In or Ga or Al and Group V elements N or P 未知
公开(公告)号：GB2482312A
公开(公告)日：2012-02-01
申请号：GB201012646
申请日：2010-07-28
申请人： SHARP KK
发明人： TAYLOR PETER NEIL , HEFFERNAN JONATHAN , HOOPER STEWART EDWARD , SMEETON TIM MICHAEL
IPC分类号： H01L33/32 , H01L31/18 , H01L33/26
摘要： The present application provides semiconductor materials made from Group II, Group III and Group V elements of the periodic table, with formula II-Ill-V. Examples are provided of the manufacture of ZnGaN, ZnInN, ZnInGaN, ZnAIN, ZnAIGaN, ZnAIInN,, ZnAIGaInN or MgInN. These can also be made in nanoparticle or thin film form. The composition of the II-III-V compound semiconductor material can be controlled in order to tailor their band-gap and light emission properties. For example figure 4 (shown) gives the measured photoluminescence emission spectroscopic output for ZnInN semiconductor, in which the reacton time is controlled. The effect of the reaction time is to lower the peak wavelength of photoluminescence intensity. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated, with reported photoluminescence quantum yields in the range 10% to 55%. A method is also included whereby the semiconductor are produced by reacting at least a source of a group II element, at least a source of a source of a group III element and at least a source of nitrogen. For example ZnInN is formed by heating at 250deg C Indium iodide, sodium amide, hexadecane thiol, zinc stearate and diphenyl ether for up to an hour. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式