专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050123852A1 Method for patterning a low activation energy photoresist 有权
标题翻译：图案化低活化能光致抗蚀剂的方法
公开(公告)号：US20050123852A1
公开(公告)日：2005-06-09
申请号：US10729452
申请日：2003-12-04
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： G03F7/004 , G03F7/039 , G03F7/40
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟基烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯烃单体， SUP），和（iii）其组合。缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

2. 发明申请

US20060128914A1 photoresist composition 有权
标题翻译：光致抗蚀剂组合物
公开(公告)号：US20060128914A1
公开(公告)日：2006-06-15
申请号：US11330659
申请日：2006-01-12
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F220/22
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化的直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2）（CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2））或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

3. 发明申请

US20050124774A1 Low activation energy photoresists 有权
标题翻译：低活化能光刻胶
公开(公告)号：US20050124774A1
公开(公告)日：2005-06-09
申请号：US10729169
申请日：2003-12-04
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard Dipietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard Dipietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F12/20 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0046 , G03F7/0397
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯属单体， SUP），和（iii）其组合。缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

4. 发明申请

US20050019696A1 Photoresist composition 失效
标题翻译：光刻胶组成
公开(公告)号：US20050019696A1
公开(公告)日：2005-01-27
申请号：US10916934
申请日：2004-08-12
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F20/22 , C08F220/28 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/73
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物：其中R 1表示氢（H），1至20个碳的直链或支链烷基，或半或全氟化线性或碳原子数为1〜20的支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基（CF 3）基团的取代的脂族基团，或取代或未取代的芳族基团; 并且其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

5. 发明申请

US20070026339A1 NEGATIVE RESISTS BASED ON A ACID-CATALYZED ELIMINATION OF POLAR MOLECULES 有权
标题翻译：基于酸性催化消除极性分子的负性电阻
公开(公告)号：US20070026339A1
公开(公告)日：2007-02-01
申请号：US10449181
申请日：2003-05-29
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , David Medeiros , Ratnam Sooriyakumaran
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , David Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03C1/00
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译：本发明提供了可用于负性抗蚀剂组合物的聚合物。本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。

6. 发明申请

US20070259274A1 Negative resists based on acid-catalyzed elimination of polar molecules 失效
标题翻译：基于酸催化消除极性分子的负电阻
公开(公告)号：US20070259274A1
公开(公告)日：2007-11-08
申请号：US11820862
申请日：2007-06-20
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , David Medeiros , Ratnam Sooriyakumaran
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , David Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03C1/705 , G03C5/16
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译：本发明提供了可用于负性抗蚀剂组合物的聚合物。本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。

7. 发明授权

US07014980B2 Photoresist composition 失效
标题翻译：光刻胶组成
公开(公告)号：US07014980B2
公开(公告)日：2006-03-21
申请号：US10916934
申请日：2004-08-12
申请人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
IPC分类号： G03F7/039 , G03F7/32 , G03F7/38 , C08J3/28
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2）（CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2））或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

8. 发明授权

US07135595B2 Photoresist composition 有权
标题翻译：光刻胶组成
公开(公告)号：US07135595B2
公开(公告)日：2006-11-14
申请号：US11330659
申请日：2006-01-12
申请人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
IPC分类号： C08F118/00 , C08F18/20 , C08F120/22 , C07C69/62 , C07C69/52
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2）（CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2））或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

9. 发明授权

US06806026B2 Photoresist composition 失效
标题翻译：光刻胶组成
公开(公告)号：US06806026B2
公开(公告)日：2004-10-19
申请号：US10159635
申请日：2002-05-31
申请人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
IPC分类号： G03F7039
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一种具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物：其中R 1表示氢（H），1-20个碳的直链或支链烷基，或半或全氟 1〜20个碳原子的直链或支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基（CF 3）基团的取代的脂族基团，或取代或未取代的芳族基团; 并且其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

10. 发明授权

US06277546B1 Process for imaging of photoresist 失效
标题翻译：光刻胶成像工艺
公开(公告)号：US06277546B1
公开(公告)日：2001-08-21
申请号：US08345290
申请日：1994-11-28
申请人： Gregory Breyta , Nicholas Jeffries Clecak , William Dinan Hinsberg, III , Donald Clifford Hofer , Hiroshi Ito , Scott Arthur MacDonald , Ratnam Sooriyakumaran
发明人： Gregory Breyta , Nicholas Jeffries Clecak , William Dinan Hinsberg, III , Donald Clifford Hofer , Hiroshi Ito , Scott Arthur MacDonald , Ratnam Sooriyakumaran
IPC分类号： G03F726
CPC分类号： G03F7/168 , G03F7/0045 , G03F7/38
摘要： The present invention relates to an improved lithographic imaging process for use in the manufacture of integrated circuits. The process provides protection to the photoresist film from airborne chemical contaminants.
摘要翻译：本发明涉及用于制造集成电路的改进的光刻成像方法。该工艺为光致抗蚀剂膜提供了防止空气传播的化学污染物的保护。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式