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1. 发明授权

US07737428B2 Memory component with memory cells having changeable resistance and fabrication method therefor 失效
标题翻译：具有可变电阻的存储单元的存储器组件及其制造方法
公开(公告)号：US07737428B2
公开(公告)日：2010-06-15
申请号：US11214692
申请日：2005-08-29
申请人： Ralf Symanczyk , Thomas Roehr
发明人： Ralf Symanczyk , Thomas Roehr
IPC分类号： H01L47/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L45/143 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/1675 , Y10S438/90
摘要： The invention relates to a memory component having memory cells based on an active solid electrolyte material which can be changed in terms of its resistance value. The active solid electrolyte material is embedded between a bottom and top electrode, can be switched between an on state with a low resistance and an off state with a high resistance by comparison therewith by application of a suitable electric field between said electrodes. A resistance material is embedded in parallel with the solid electrolyte material between the electrodes.
摘要翻译：本发明涉及具有可根据其电阻值改变的活性固体电解质材料的存储单元的存储元件。活性固体电解质材料嵌入在底部和顶部电极之间，可以通过在所述电极之间施加合适的电场而与具有低电阻的导通状态和具有高电阻的断开状态进行比较来进行比较。电阻材料与电极之间的固体电解质材料平行地嵌入。

2. 发明申请

US20060060832A1 Memory component with memory cells having changeable resistance and fabrication method therefor 失效
标题翻译：具有可变电阻的存储单元的存储器组件及其制造方法
公开(公告)号：US20060060832A1
公开(公告)日：2006-03-23
申请号：US11214692
申请日：2005-08-29
申请人： Ralf Symanczyk , Thomas Roehr
发明人： Ralf Symanczyk , Thomas Roehr
IPC分类号： H01L47/00
CPC分类号： H01L45/143 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/1675 , Y10S438/90
摘要： The invention relates to a memory component having memory cells based on an active solid electrolyte material which can be changed in terms of its resistance value. The active solid electrolyte material is embedded between a bottom and top electrode, can be switched between an on state with a low resistance and an off state with a high resistance by comparison therewith by application of a suitable electric field between said electrodes. A resistance material is embedded in parallel with the solid electrolyte material between the electrodes.
摘要翻译：本发明涉及具有可根据其电阻值改变的活性固体电解质材料的存储单元的存储元件。活性固体电解质材料嵌入在底部和顶部电极之间，可以通过在所述电极之间施加合适的电场而与具有低电阻的导通状态和具有高电阻的断开状态进行比较来进行比较。电阻材料与电极之间的固体电解质材料平行地嵌入。

3. 发明授权

US07372716B2 Memory having CBRAM memory cells and method 有权
标题翻译：具有CBRAM存储单元和方法的内存
公开(公告)号：US07372716B2
公开(公告)日：2008-05-13
申请号：US11209424
申请日：2005-08-23
申请人： Thomas Roehr , Ralf Symanczyk , Michael Kund
发明人： Thomas Roehr , Ralf Symanczyk , Michael Kund
IPC分类号： G11C17/00
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/0078
摘要： A memory cell arrangement has a plurality of memory cells of the CBRAM type and a programming apparatus, the memory cells being arranged along bit lines and each bit line having a programming apparatus. The invention provides for the programming apparatus to comprise a charge storage device and a switchable charging apparatus. The inventive method for programming memory cells of the CBRAM type is carried out in such a manner that, a given quantity of an electrical charge is stored in a charge storage device, and the stored quantity of electrical charge is transferred to the memory cell to be programmed.
摘要翻译：存储单元布置具有多个CBRAM类型的存储单元和编程设备，存储器单元沿着位线布置，并且每个位线具有编程设备。本发明提供了编程装置，其包括电荷存储装置和可切换充电装置。用于编写CBRAM类型的存储单元的本发明方法是以一定量的方式进行的，即将一定数量的电荷存储在电荷存储装置中，并将存储的电荷量传送到存储单元以成为程序。

4. 发明申请

US20060062043A1 CBRAM memory cell arrangement and method for programming CBRAM memory cells 有权
标题翻译： CBRAM存储单元布置方法和CBRAM存储单元编程方法
公开(公告)号：US20060062043A1
公开(公告)日：2006-03-23
申请号：US11209424
申请日：2005-08-23
申请人： Thomas Roehr , Ralf Symanczyk , Michael Kund
发明人： Thomas Roehr , Ralf Symanczyk , Michael Kund
IPC分类号： G11C11/24
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/0078
摘要： A memory cell arrangement has a plurality of memory cells of the CBRAM type and a programming apparatus, the memory cells being arranged along bit lines and each bit line having a programming apparatus. The invention provides for the programming apparatus to comprise a charge storage device and a switchable charging apparatus. The inventive method for programming memory cells of the CBRAM type is carried out in such a manner that, a given quantity of an electrical charge is stored in a charge storage device, and the stored quantity of electrical charge is transferred to the memory cell to be programmed.
摘要翻译：存储单元布置具有多个CBRAM类型的存储单元和编程设备，存储器单元沿着位线布置，并且每个位线具有编程设备。本发明提供了编程装置，其包括电荷存储装置和可切换充电装置。用于编写CBRAM类型的存储单元的本发明方法是以一定量的方式进行的，即将一定数量的电荷存储在电荷存储装置中，并将存储的电荷量传送到存储单元程序。

5. 发明授权

US08531863B2 Method for operating an integrated circuit having a resistivity changing memory cell 有权
标题翻译：用于操作具有电阻率变化存储单元的集成电路的方法
公开(公告)号：US08531863B2
公开(公告)日：2013-09-10
申请号：US11133716
申请日：2005-05-20
申请人： Ralf Symanczyk , Corvin Liaw
发明人： Ralf Symanczyk , Corvin Liaw
IPC分类号： G11C11/00 , G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G11C13/0069 , G11C13/0011 , G11C13/0033 , G11C16/3431 , G11C2013/009 , G11C2213/79
摘要： A method for operating a resistivity changing memory including applying a programming voltage to a resistivity changing memory cell to define a programmed state and applying a refresh voltage to the resistivity changing memory cell for maintaining the programmed state of the resistivity changing memory cell. In one embodiment, the refresh voltage is less than the programming voltage.
摘要翻译：一种用于操作电阻率变化存储器的方法，包括将编程电压施加到电阻率变化存储单元以限定编程状态，并向电阻率变化存储单元施加刷新电压，以维持电阻率变化存储单元的编程状态。在一个实施例中，刷新电压小于编程电压。

6. 发明申请

US20070195611A1 Programmable structure, a memory, a display and a method for reading data from a memory cell 审中-公开
标题翻译：可编程结构，存储器，显示器和用于从存储器单元读取数据的方法
公开(公告)号：US20070195611A1
公开(公告)日：2007-08-23
申请号：US11360149
申请日：2006-02-23
申请人： Ralf Symanczyk , Cay-Uwe Pinnow
发明人： Ralf Symanczyk , Cay-Uwe Pinnow
IPC分类号： G11C7/10
CPC分类号： G11C13/04 , G09G3/3433 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C2013/009 , G11C2213/79
摘要： The invention refers to an improved programmable structure, an improved memory, an improved display and an improved method for reading data from a memory cell. More particularly, embodiments of the invention provide a programmable structure and a memory, whereby a programmed state of the programmable structure and a programmed state of a memory cell of the memory can be read out with a simple method. According a further aspect of the present invention, the stored data of the programmable structure and the stored data of the memory device can be read out according an improved method. In accordance with one exemplary embodiment of the present invention, a programmable structure comprises an ion conductor layer, a modifying device coupled to the ion conductor layer, the modifying device being operable to change an electromagnetic property of the ion conductor layer, an emitting device for sending an electromagnetic radiation to the ion conductor layer and a receiving device for receiving an electromagnetic radiation from the ion conductor layer. The ion conductor layer is configured that when a bias is applied across the ion conductor layer an electromagnetic property of the ion conductor layer is changed. Therefore it is possible to program different states referring to different electromagnetic properties of the ion conductor layers. The different states of the ion conductor layer can be read by sending an electromagnetic radiation to the ion conductor layer and receiving the electromagnetic radiation from the ion conductor layer.
摘要翻译：本发明涉及改进的可编程结构，改进的存储器，改进的显示器和用于从存储器单元读取数据的改进方法。更具体地，本发明的实施例提供可编程结构和存储器，由此可以用简单的方法读出可编程结构的编程状态和存储器的存储单元的编程状态。根据本发明的另一方面，可以根据改进的方法读出可编程结构的存储数据和存储器件的存储数据。根据本发明的一个示例性实施例，可编程结构包括离子导体层，耦合到离子导体层的修改设备，修改设备可操作以改变离子导体层的电磁特性，用于向离子导体层发送电磁辐射和从离子导体层接收电磁辐射的接收装置。离子导体层被配置为当跨越离子导体层施加偏压时，离子导体层的电磁特性改变。因此，可以根据离子导体层的不同电磁特性编程不同的状态。可以通过向离子导体层发送电磁辐射并接收来自离子导体层的电磁辐射来读取离子导体层的不同状态。

7. 发明授权

US07214587B2 Method for fabricating a semiconductor memory cell 失效
标题翻译：半导体存储单元的制造方法
公开(公告)号：US07214587B2
公开(公告)日：2007-05-08
申请号：US11074946
申请日：2005-03-09
申请人： Cay-Uwe Pinnow , Ralf Symanczyk
发明人： Cay-Uwe Pinnow , Ralf Symanczyk
IPC分类号： H01L21/336
CPC分类号： H01L45/142 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143
摘要： Semiconductor memory cell and also a corresponding fabrication method are described, in which a first or bottom electrode device of the memory element of the semiconductor memory cell according to the invention and the gate electrode device of the underlying field effect transistor as selection transistor of the semiconductor memory cell are formed as the same material region or with a common material region.
摘要翻译：描述了半导体存储单元以及相应的制造方法，其中根据本发明的半导体存储单元的存储元件的第一或下部电极器件和作为半导体的选择晶体管的底层场效应晶体管的栅极电极器件存储单元形成为相同的材料区域或与公共材料区域形成。

8. 发明申请

US20060291268A1 Intergrated semiconductor memory and method for producing an integrated semiconductor memory 有权
标题翻译：集成半导体存储器和集成半导体存储器的制造方法
公开(公告)号：US20060291268A1
公开(公告)日：2006-12-28
申请号：US11441805
申请日：2006-05-26
申请人： Thomas Happ , Cay-Uwe Pinnow , Ralf Symanczyk , Klaus-Dieter Ufert
发明人： Thomas Happ , Cay-Uwe Pinnow , Ralf Symanczyk , Klaus-Dieter Ufert
IPC分类号： G11C17/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1666
摘要： An integrated semiconductor memory includes a storage medium (6) arranged between two electrodes (10, 20), which storage medium may be a phase change medium, for example. The storage medium (6) can be put into a first state or a second state by means of an electric current, as a result of which an item of information can be stored. According to embodiments of the invention, a layer plane (L) is provided in which impurity particles made from a material (4) are embedded, as a result of which the current density in the storage medium is locally increased and the programming current required for reprogramming is reduced. As a result, the current consumption of memory elements containing a phase change medium is reduced, so that for the first time they can be embodied with minimal feature size, together with other components such as transistors, and integrated into a single semiconductor circuit and no longer have to be arranged in separate subcircuits.
摘要翻译：集成半导体存储器包括布置在两个电极（10,20）之间的存储介质（6），该存储介质可以是例如相变介质。存储介质（6）可以通过电流进入第一状态或第二状态，结果可以存储信息项。根据本发明的实施例，提供了一种层状平面（L），其中嵌入由材料（4）制成的杂质颗粒，结果存储介质中的电流密度局部增加，并且需要编程电流重编程减少。结果，包含相变介质的存储元件的电流消耗减少，使得它们可以首次以最小的特征尺寸与其他元件（例如晶体管）一体化，并且集成到单个半导体电路中，并且不存在更长的时间必须在单独的子电路中排列。

9. 发明申请

US20090196088A1 RESISTANCE CONTROL IN CONDUCTIVE BRIDGING MEMORIES 审中-公开
标题翻译：导电桥记录中的电阻控制
公开(公告)号：US20090196088A1
公开(公告)日：2009-08-06
申请号：US12024300
申请日：2008-02-01
申请人： Rok Dittrich , Jan Keller , Ralf Symanczyk
发明人： Rok Dittrich , Jan Keller , Ralf Symanczyk
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C13/0011 , G11C13/0069 , G11C2013/0073 , G11C2213/74 , G11C2213/76
摘要： An integrated circuit may comprise one or more resistive storage cells, wherein each resistive storage cell comprises a resistive storage medium that is switchable between at least a high resistive state and a low resistive state; and a resistance element communicatively coupled to the resistive storage medium in series.
摘要翻译：集成电路可以包括一个或多个电阻存储单元，其中每个电阻存储单元包括可在至少高电阻状态和低电阻状态之间切换的电阻存储介质; 以及电阻元件，其通信地串联耦合到所述电阻存储介质。

10. 发明授权

US07307868B2 Integrated circuit including memory cell for storing an information item and method 有权
标题翻译：集成电路，包括用于存储信息项目和方法的存储单元
公开(公告)号：US07307868B2
公开(公告)日：2007-12-11
申请号：US11107182
申请日：2005-04-15
申请人： Ralf Symanczyk
发明人： Ralf Symanczyk
IPC分类号： G11C11/00
CPC分类号： H01L45/12 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/1683
摘要： The invention relates to a memory cell for providing an information item, having a memory element, which has a PMC resistance component with a solid electrolyte material. The solid electrolyte material may be put into a first state with a high electrical resistance and into a second state with a low electrical resistance. The memory element has a resistance element which is connected up to the PMC resistance component in such a way as to reduce the total resistance of the memory element in the first state.
摘要翻译：本发明涉及一种用于提供信息项的存储单元，具有一个具有固体电解质材料的PMC电阻分量的存储元件。可以将固体电解质材料置于具有高电阻的第一状态，并且以低电阻进入第二状态。存储元件具有电阻元件，该电阻元件以减少第一状态下的存储元件的总电阻的方式连接到PMC电阻分量。

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