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1. 发明申请

US20060163684A1 Solid-state image pickup apparatus 失效
公开(公告)号：US20060163684A1
公开(公告)日：2006-07-27
申请号：US11387819
申请日：2006-03-24
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/06
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

2. 发明授权

US07224003B2 Solid-state image pickup apparatus 失效
标题翻译：固态摄像装置
公开(公告)号：US07224003B2
公开(公告)日：2007-05-29
申请号：US11387819
申请日：2006-03-24
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/0328
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译：本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极形成晶体管。由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

3. 发明授权

US07042061B2 Solid-state image pickup apparatus 失效
标题翻译：固态摄像装置
公开(公告)号：US07042061B2
公开(公告)日：2006-05-09
申请号：US10727515
申请日：2003-12-05
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/06 , H01L27/148
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译：本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极形成晶体管。由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

4. 发明授权

US06690423B1 Solid-state image pickup apparatus 失效
标题翻译：固态摄像装置
公开(公告)号：US06690423B1
公开(公告)日：2004-02-10
申请号：US09272337
申请日：1999-03-19
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译：本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

5. 发明申请

US20100207209A1 SEMICONDUCTOR DEVICE AND PRODUCING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100207209A1
公开(公告)日：2010-08-19
申请号：US12563298
申请日：2009-09-21
申请人： Hideki Inokuma
发明人： Hideki Inokuma
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/7843 , H01L29/7848
摘要： A semiconductor device having a small parasitic resistance and a high driving current is provided. The semiconductor device includes a fin portion that includes a pair of source/drain regions located on both end sides and a channel region sandwiched between the pair of source/drain regions; films that are formed on both sides in a channel-width direction of the fin portion; a gate electrode that is provided so as to stride across the channel region of the fin portion; a gate insulating film that is interposed between the gate electrode and the channel region; and a stress applying layer that applies a stress to the channel region of the fin portion, an upper surface and side surfaces of the source/drain region being coated with the stress applying layer in the fin portion, a lower end surface of the stress applying layer being in contact with the film with no gap.
摘要翻译：提供具有小寄生电阻和高驱动电流的半导体器件。半导体器件包括鳍部，其包括位于两端侧的一对源极/漏极区域和夹在该对源极/漏极区域之间的沟道区域; 在翅片部分的通道宽度方向上形成在两侧的膜; 栅电极，其设置成跨越所述鳍部的沟道区域; 介于栅电极和沟道区之间的栅极绝缘膜; 以及应力施加层，其对所述翅片部分的所述沟道区域施加应力，所述源极/漏极区域的上表面和侧表面在所述翅片部分中涂覆有所述应力施加层，所述应力施加的下端面层与膜没有间隙地接触。

6. 发明申请

US20130228736A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20130228736A1
公开(公告)日：2013-09-05
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

7. 发明授权

US08004010B2 Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08004010B2
公开(公告)日：2011-08-23
申请号：US12035260
申请日：2008-02-21
申请人： Hideki Inokuma
发明人： Hideki Inokuma
IPC分类号： H01L27/11 , H01L29/778 , H01L21/336
CPC分类号： H01L27/1104 , H01L27/11 , H01L29/6656 , H01L29/66636 , H01L29/7833 , H01L29/7834
摘要： In a semiconductor device with a shared contact, a gate electrode is formed via a gate insulating film on a semiconductor substrate and a sidewall insulating film is formed on both side faces of the gate electrode. At least one of the surface parts of the semiconductor substrate adjacent to both sides of the gate electrode is removed beyond the lower part of the sidewall insulating film and to the underside of the gate electrode. Then, the gate insulating film exposed in the remove part is removed. An impurity-doped semiconductor layer is formed in the part where the semiconductor substrate and the gate insulating film have been removed.
摘要翻译：在具有共用接触的半导体器件中，通过半导体衬底上的栅极绝缘膜形成栅电极，并且在栅电极的两个侧面上形成侧壁绝缘膜。与栅电极的两侧相邻的半导体衬底的表面部分中的至少一个被去除超过侧壁绝缘膜的下部和栅电极的下侧。然后，去除暴露在去除部分中的栅极绝缘膜。在去除半导体衬底和栅极绝缘膜的部分中形成杂质掺杂半导体层。

8. 发明授权

US07947554B2 Method of fabricating semiconductor device having semiconductor elements 失效
标题翻译：制造具有半导体元件的半导体器件的方法
公开(公告)号：US07947554B2
公开(公告)日：2011-05-24
申请号：US11905302
申请日：2007-09-28
申请人： Hideki Inokuma
发明人： Hideki Inokuma
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L21/823412 , H01L21/823468 , H01L21/823475 , H01L21/823481 , H01L29/6653 , H01L29/6656 , H01L29/78 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： According to an aspect of the invention, there is provided a semiconductor device including a first semiconductor element formed on a semiconductor substrate and using electrons as carriers, and a second semiconductor element formed on the semiconductor substrate and using holes as carriers, a first insulating film and a second insulating film formed on source/drain regions and gate electrodes of the first element and the second element, the first insulating film having tensile stress with respect to the first element, and the second insulating film having compression stress with respect to the second element, and sidewall spacers of the gate electrodes of the first element and the second element, at least portions of the sidewall spacers being removed, wherein at least one of the first insulating film and the second insulating film does not close a spacing between the gate electrodes of the first element and the second element.
摘要翻译：根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上并使用电子作为载体的第一半导体元件和形成在半导体衬底上并使用空穴作为载流子的第二半导体元件，第一绝缘膜以及形成在所述第一元件和所述第二元件的源极/漏极区域和栅电极上的第二绝缘膜，所述第一绝缘膜相对于所述第一元件具有拉伸应力，并且所述第二绝缘膜相对于所述第二元件具有压缩应力第一元件和第二元件的栅电极的元件和侧壁间隔物，至少部分侧壁间隔物被去除，其中第一绝缘膜和第二绝缘膜中的至少一个没有闭合栅极之间的间隔第一元件和第二元件的电极。

9. 发明授权

US08822968B2 Nonvolatile memory device and method for manufacturing same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08822968B2
公开(公告)日：2014-09-02
申请号：US13600719
申请日：2012-08-31
申请人： Hideki Inokuma
发明人： Hideki Inokuma
IPC分类号： H01L29/02
CPC分类号： H01L27/2481 , G11C13/0011 , G11C2213/71 , G11C2213/77 , H01L45/085 , H01L45/1266 , H01L45/145 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a first wiring layer. The device includes a second wiring layer intersecting with the first wiring layer. And the device includes a first memory layer provided at a position where the first wiring layer and the second wiring layer intersect. And the first memory layer contacts with the first wiring layer, and the first wiring layer is a layer which is capable of supplying a metal ion to the first memory layer.
摘要翻译：根据一个实施例，非易失性存储器件包括第一布线层。该装置包括与第一布线层相交的第二布线层。并且该装置包括设置在第一布线层和第二布线层相交的位置处的第一存储层。并且第一存储层与第一布线层接触，第一布线层是能够向第一存储层提供金属离子的层。

10. 发明授权

US08664632B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08664632B2
公开(公告)日：2014-03-04
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke Matsushita , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke Matsushita , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L47/00 , G11C11/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

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