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1. 发明申请

US20070145384A1 III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region 有权
标题翻译：具有双异质结构发光区域的III型氮化物发光器件
公开(公告)号：US20070145384A1
公开(公告)日：2007-06-28
申请号：US11682276
申请日：2007-03-05
申请人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
发明人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要翻译：在器件中，III族氮化物发光层设置在n型区域和p型区域之间。设置在n型区域和发光层之间的第一间隔层被掺杂到掺杂剂浓度为6×10 18 cm -3和5×10 6 19厘米-3 -3。设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到掺杂剂浓度小于6×10 -3 -3 -3倍 >。

2. 发明申请

US20070045638A1 III-nitride light emitting device with double heterostructure light emitting region 审中-公开
标题翻译：具有双异质结构发光区域的III族氮化物发光器件
公开(公告)号：US20070045638A1
公开(公告)日：2007-03-01
申请号：US11211921
申请日：2005-08-24
申请人： Yu-Chen Shen , Nathan Gardner , Satoshi Watanabe , Michael Krames , Gerd Mueller
发明人： Yu-Chen Shen , Nathan Gardner , Satoshi Watanabe , Michael Krames , Gerd Mueller
IPC分类号： H01L33/00
摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.
摘要翻译： III族氮化物发光层设置在n型区域和p型区域之间。发光层是掺杂的厚层。在一些实施例中，发光层夹在两个掺杂间隔层之间。

3. 发明申请

US20060197100A1 Reverse polarization light emitting region for a semiconductor light emitting device 有权
标题翻译：用于半导体发光器件的反向偏振发光区域
公开(公告)号：US20060197100A1
公开(公告)日：2006-09-07
申请号：US11226185
申请日：2005-09-13
申请人： Yu-Chen Shen , Michael Krames , Nathan Gardner
发明人： Yu-Chen Shen , Michael Krames , Nathan Gardner
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/32 , H01L33/16
摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.
摘要翻译：半导体发光器件包括设置在n型区域和p型区域之间的发光层。发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

4. 发明申请

US20060091404A1 Semiconductor light emitting devices with graded compositon light emitting layers 有权
标题翻译：具有分级组合发光层的半导体发光器件
公开(公告)号：US20060091404A1
公开(公告)日：2006-05-04
申请号：US10977867
申请日：2004-10-29
申请人： Yu-Chen Shen , Michael Krames , Nathan Gardner
发明人： Yu-Chen Shen , Michael Krames , Nathan Gardner
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3205 , H01S5/34333
摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1-xN, AlxGa1-xN, or InxAlyGa1-x-yN.
摘要翻译：半导体发光器件中的III族氮化物发光层具有渐变组成。发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。在发光层中的分级可以减少与发光层中的极化场相关的问题。发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

5. 发明申请

US20050023549A1 SEMICONDUCTOR LIGHT EMITTING DEVICES 有权
标题翻译：半导体发光器件
公开(公告)号：US20050023549A1
公开(公告)日：2005-02-03
申请号：US10633058
申请日：2003-08-01
申请人： Nathan Gardner , Jonathan Wierer , Gerd Mueller , Michael Krames
发明人： Nathan Gardner , Jonathan Wierer , Gerd Mueller , Michael Krames
IPC分类号： H01L27/15 , H01L33/00 , H01L33/22 , H01L33/40
CPC分类号： H01L33/405 , H01L33/0004 , H01L33/22
摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.
摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。第一和第二触点电连接到第一和第二n型层。第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

6. 发明申请

US20060011937A1 Strain-controlled III-nitride light emitting device 审中-公开
公开(公告)号：US20060011937A1
公开(公告)日：2006-01-19
申请号：US11227814
申请日：2005-09-14
申请人： Werner Goetz , Michael Krames , Anneli Munkholm
发明人： Werner Goetz , Michael Krames , Anneli Munkholm
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/32 , H01L33/08 , H01L33/12 , H01L33/20
摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

7. 发明申请

US20080023719A1 Light Emitting Devices with Improved Light Extraction Efficiency 有权
标题翻译：具有提高光提取效率的发光装置
公开(公告)号：US20080023719A1
公开(公告)日：2008-01-31
申请号：US11868903
申请日：2007-10-08
申请人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
发明人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
摘要翻译：提供了具有提高光提取效率的发光器件。发光器件具有包括有源区的半导体层的一叠层。叠层结合到透明光学元件上。

8. 发明申请

US20070045653A1 Selective filtering of wavelength-converted semiconductor light emitting devices 失效
标题翻译：波长转换半导体发光器件的选择滤波
公开(公告)号：US20070045653A1
公开(公告)日：2007-03-01
申请号：US11400057
申请日：2006-04-07
申请人： Michael Krames , Gerd Mueller , Regina Mueller-Mach
发明人： Michael Krames , Gerd Mueller , Regina Mueller-Mach
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/50 , H01L2224/14
摘要： A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.
摘要翻译：一种结构包括半导体发光器件，其包括设置在n型区域和p型区域之间的发光层。发光层发射第一峰值波长的第一光。吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。

9. 发明申请

US20050236641A1 STRAIN-CONTROLLED III-NITRIDE LIGHT EMITTING DEVICE 有权
标题翻译：应变控制的III-NITRIDE发光装置
公开(公告)号：US20050236641A1
公开(公告)日：2005-10-27
申请号：US10830202
申请日：2004-04-21
申请人： Werner Goetz , Michael Krames , Anneli Munkholm
发明人： Werner Goetz , Michael Krames , Anneli Munkholm
IPC分类号： H01L33/08 , H01L33/32 , H01L29/22
CPC分类号： H01L33/32 , H01L33/08 , H01L33/12
摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
摘要翻译：在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。例如，该比率可以在约1至约1.01之间。

10. 发明申请

US20050224826A1 Optical system for light emitting diodes 失效
标题翻译：发光二极管光学系统
公开(公告)号：US20050224826A1
公开(公告)日：2005-10-13
申请号：US10804314
申请日：2004-03-19
申请人： Matthijs Keuper , Michael Krames , Gerd Mueller
发明人： Matthijs Keuper , Michael Krames , Gerd Mueller
IPC分类号： G03B21/00 , G02F1/13357 , G03B21/14 , H01L33/00 , H01L33/16 , H01L33/32 , H01L33/44
CPC分类号： H04N9/3152 , H01L33/0004 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/44 , H01L33/507 , H01L33/60
摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.
摘要翻译：发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。波长转换材料例如设置在出射表面上。即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。如果需要，可以在分束器和微显示器之间设置集中器元件。

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