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    • 3. 发明申请
    • SOLAR CELL ABSORBER LAYER FORMED FROM METAL ION PRECURSORS
    • 从金属离子前驱体形成的太阳能电池吸收层
    • WO2008095146A2
    • 2008-08-07
    • PCT/US2008052730
    • 2008-01-31
    • VAN DUREN JEROEN K JROBINSON MATTHEW RSAGER BRIAN M
    • VAN DUREN JEROEN K JROBINSON MATTHEW RSAGER BRIAN M
    • H01L31/04
    • H01L31/03928H01L31/06H01L31/0749Y02E10/541Y02P70/521
    • Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one polar solvent, at least one binder, and at least one Group IB and/or IIIA hydroxide. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.
    • 提供了用于形成吸收层的方法和装置。 在一个实施方案中,提供了一种方法,其包括在基底上沉积溶液以形成前体层。 溶液包含至少一种极性溶剂,至少一种粘合剂和至少一种IB族和/或IIIA型氢氧化物。 在一个或多个步骤中处理前体层以形成光伏吸收层。 在一个实施方案中,吸收层可以通过将前体层加工成固体膜,然后在至少含有元素周期表第VIA族元素的气氛中使固体膜热反应形成光伏吸收层来产生。 任选地,吸收层可以通过前体层在至少含有周期表第VIA族元素的气氛中进行热反应来加工,以形成光伏吸收层。
    • 5. 发明申请
    • METTALIC DISPERSION AND FORMATION OF COMPOUND FILM FOR PHOTOVOLTAIC DEVICE ACTIVE LAYER
    • 金属分散体和形成用于光伏器件活性层的复合膜
    • WO2006101986A2
    • 2006-09-28
    • PCT/US2006009534
    • 2006-03-16
    • NANOSOLAR INCROBINSON MATTHEW RROSCHEISEN MARTIN REBERSPACHER CHRISVAN DUREN JEROEN K JLEIDHOLM CRAIG R
    • ROBINSON MATTHEW RROSCHEISEN MARTIN REBERSPACHER CHRISVAN DUREN JEROEN K JLEIDHOLM CRAIG R
    • H02N6/00
    • H01L31/0322C23C18/02C23C18/1216C23C18/1258C23C18/1279C23C18/1287H01L21/02568H01L21/02601H01L21/02628H01L31/0749Y02E10/541
    • A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the IB, the IIIA, and, optionally, the VIA group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device. Optionally, the compound film for an active layer of a photovoltaic device may be formed in two or more sub-layers. A first sub-layer having a first component of the active layer may be formed on a substrate with a first process. A second sub-layer including a second component of the active layer may then be formed using a second process such that the first sublayer is disposed between the second sub-layer and the substrate. The second component may have a different chemical composition than the first component. The first and/or second sub-layer may comprise one or more components in the form of particles and/or globules. This procedure may be repeated any number of times for any number of sub-layers so that active layer can be built up sequentially. The different chemical compositions of the components in the sub-layers can provide the active layer with a graded bandgap.
    • 可以通过配制由IB,IIIA和任选地具有受控整体组成的元素的VIA族组成的元素纳米颗粒的混合物来形成化合物膜。 将纳米颗粒混合物与镓的纳米金属的悬浮液组合以形成分散体。 可以将分散体沉积在基底上以在基底上形成层。 然后可以在合适的气氛中反应该层以形成化合物膜。 复合膜可以用作光伏器件中的光吸收层。 可选地,用于光伏器件的有源层的化合物膜可以形成为两个或更多个子层。 具有有源层的第一分量的第一子层可以用第一工艺形成在衬底上。 然后可以使用第二工序形成包括有源层的第二部件的第二子层,使得第一子层设置在第二子层和衬底之间。 第二组分可以具有与第一组分不同的化学组成。 第一和/或第二子层可以包括颗粒和/或小球形式的一种或多种组分。 对于任何数量的子层,该过程可以重复任意次数,以便可以顺序地建立活动层。 子层中组分的不同化学组成可以为活性层提供渐变的带隙。
    • 8. 发明申请
    • THIN-FILM DEVICES FROMED FROM SOLID PARTICLES
    • 来自固体颗粒的薄膜装置
    • WO2007146964A3
    • 2008-02-28
    • PCT/US2007071048
    • 2007-06-12
    • ROBINSON MATTHEW REBERSPACHER CHRISVAN DUREN JEROEN K J
    • ROBINSON MATTHEW REBERSPACHER CHRISVAN DUREN JEROEN K J
    • H01L21/203
    • H01L31/0322Y02E10/541
    • Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 2O0C and about 2000C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
    • 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中,描述了一种方法,其包括提供包含a)基于IIIA族的材料和b)至少一种其它材料的合金的第一材料。 可以以足够的量包含材料,使得在室温和高于室温的沉积或预沉积温度之间的温度范围内,第一材料中不存在液相,其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料,其包括:a)第一材料的颗粒,和b)含有至少一种元素的颗粒,所述元素包括:IB,IIIA族,VIA族元素,含有任何上述元素的合金,或其组合。 上述温度范围可以在约20℃至约200℃之间。 应当理解,该合金的熔融温度可以比基于IIIA的材料的元素形式的熔融温度更高。