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    • 1. 发明申请
    • Method for in-situ polycrystalline thin film growth
    • 原位多晶薄膜生长方法
    • US20060257569A1
    • 2006-11-16
    • US11433176
    • 2006-05-12
    • Han KimMyoung KimMyung HuhSeok JeongHee Kang
    • Han KimMyoung KimMyung HuhSeok JeongHee Kang
    • C23C16/00
    • C23C16/24C23C16/44
    • A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.
    • 提供了一种原位多晶薄膜生长的方法。 使用催化剂增强化学气相沉积(CECVD)装置来生长多晶硅薄膜。 不需要随后的退火或脱氢过程。 该方法包括排空室以形成真空室,然后净化真空室并引入催化剂。 然后将基板放置在真空室中,并将反应气体注入室中。 反应气体与室中的催化剂反应,以在衬底上生长多晶薄膜。 本发明的方法减少了处理时间和生产成本,并且由于消除了大型退火设备而可用于制造更大的装置。
    • 2. 发明申请
    • CVD apparatus for depositing polysilicon
    • 用于沉积多晶硅的CVD装置
    • US20070128861A1
    • 2007-06-07
    • US11405091
    • 2006-04-17
    • Myoung KimHan KimSeok Jeong
    • Myoung KimHan KimSeok Jeong
    • H01L21/84H01L21/44C23C16/00
    • C23C16/44C23C16/24H01L27/13H01L29/6675
    • Disclosed is a CVD apparatus for depositing polysilicon without a separate following annealing process, the CVD apparatus comprising: a chamber to form a thin film on a substrate; a showerhead placed in an upper part of the chamber to inject reaction gas onto the substrate; a distributor formed with distributing holes to uniformly distribute the reaction gas; a catalyst hot wire unit to heat and dissolve the reaction gas injected through the distributing holes of the distributor; a chuck on which the substrate is mounted; a discharging hole to discharge the reaction gas; and a shielding wall provided as a lateral wall of the chamber and formed with a heater to suppress particle generation. With this configuration, the particle generation is minimized and thus the yield is enhanced. Also, the thin film has good crystallinity, and decreased hydrogen content.
    • 公开了一种用于在没有单独的跟随退火工艺的情况下沉积多晶硅的CVD装置,该CVD装置包括:在衬底上形成薄膜的腔室; 放置在所述室的上部的喷头,以将反应气体注入到所述基板上; 形成有分布孔以均匀分布反应气体的分配器; 用于加热和溶解通过分配器的分配孔注入的反应气体的催化剂热丝单元; 安装有基板的卡盘; 用于排出反应气体的排出孔; 以及作为室的侧壁设置的屏蔽壁,并且形成有用于抑制颗粒产生的加热器。 利用这种构造,使颗粒生成最小化,从而提高了产率。 此外,薄膜具有良好的结晶度,并降低了氢含量。
    • 5. 发明申请
    • Vapor deposition source and vapor deposition apparatus having the same
    • 蒸气沉积源及其蒸镀装置
    • US20060169211A1
    • 2006-08-03
    • US11342681
    • 2006-01-31
    • Do KimMyung HuhSeok JeongHee KangKazuo Furuno
    • Do KimMyung HuhSeok JeongHee KangKazuo Furuno
    • C23C16/00
    • C23C14/243C23C14/24
    • A vapor deposition source has a reduced size by disposing a crucible, a heating portion, and a nozzle portion in one defined space. A vapor deposition apparatus deposits deposition materials on a substrate using the vapor deposition source. The vapor deposition source includes a housing, and the crucible is mounted in the housing for vaporizing the deposition materials. The heating portion is installed adjacent to the crucible in the housing for heating the crucible. The nozzle portion injects the vaporized deposition materials into a substrate disposed at an exterior of the housing through an injection nozzle. The vapor deposition source is manufactured in a smaller and lightweight form in comparison with conventional vapor deposition sources in which a crucible and a nozzle portion are arranged in different spaces. The diameter and number of injection nozzles of the invention are restricted to block radiant heat discharged from the vapor deposition source, so that deposition materials are uniformly deposited. Furthermore, the output power of a conveyer for conveying the vapor deposition source is reduced. In addition, a plurality of vapor deposition sources is arranged in a line to perform concentrated deposition of deposition materials so that quality of the resultant product is improved.
    • 气相沉积源通过在一个限定的空间内设置坩埚,加热部分和喷嘴部分而具有减小的尺寸。 气相沉积设备使用蒸镀源将沉积材料沉积在基板上。 气相沉积源包括壳体,并且坩埚安装在壳体中以使沉积材料蒸发。 加热部分安装在坩埚附近,用于加热坩埚。 喷嘴部分通过注射喷嘴将蒸发的沉积材料注入设置在外壳外部的基板中。 与其中坩埚和喷嘴部分布置在不同空间中的常规气相沉积源相比,气相沉积源以更小和轻质的形式制造。 本发明的注射喷嘴的直径和数量被限制为阻挡从蒸镀源排出的辐射热,从而均匀地沉积沉积材料。 此外,用于输送气相沉积源的输送机的输出功率降低。 此外,多个气相沉积源被排列成一行,以进行沉积材料的浓缩沉积,从而提高所得产品的质量。
    • 7. 发明申请
    • Apparatus for depositing an organic layer and method for controlling a heating unit thereof
    • 用于沉积有机层的设备和用于控制其加热单元的方法
    • US20070077358A1
    • 2007-04-05
    • US11515364
    • 2006-08-31
    • Min JeongDo KimSeok Jeong
    • Min JeongDo KimSeok Jeong
    • C23C16/00
    • C23C14/243
    • An apparatus for depositing an organic layer and a method for controlling the heating unit thereof are provided. The apparatus includes a crucible positioned in a deposition chamber and containing materials for evaporation. The apparatus also includes a heating unit having first and second heat sources for heating the crucible. A housing isolates the heat emitted from the heating unit and an outer wall anchors the crucible. A nozzle sprays the materials evaporated from the crucible. The first and second heat sources are positioned on first and second sides of the crucible, respectively, and are independently controlled to minimize the time required to stabilize the deposition rate.
    • 提供了一种用于沉积有机层的设备及其加热单元的控制方法。 该装置包括位于沉积室中并包含用于蒸发的材料的坩埚。 该装置还包括具有用于加热坩埚的第一和第二热源的加热单元。 外壳隔离加热单元发出的热量,外壁将坩埚固定。 喷嘴喷洒从坩埚蒸发的材料。 第一和第二热源分别位于坩埚的第一和第二侧上,并且被独立地控制以最小化稳定沉积速率所需的时间。