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    • 4. 发明申请
    • STRUCTURE OF CONTAINER MOUNTED TO VEHICLE SEAT AND METHOD FOR MOUNTING CONTAINER TO VEHICLE SEAT
    • 集装箱安装在车辆座椅上的结构以及将集装箱安装在车辆座椅上的方法
    • US20120200127A1
    • 2012-08-09
    • US13405485
    • 2012-02-27
    • Takahiko NAGASAWATakashi INOUEAtsushi ISHIINaoyuki MAKITA
    • Takahiko NAGASAWATakashi INOUEAtsushi ISHIINaoyuki MAKITA
    • A47C7/62B23P11/00
    • B60R7/043B60N2/58B60N3/101B60N3/108Y10T29/49826
    • Container for accommodating small article(s) comprises: a container body including flange portion wherein connecting slits are formed; and a container lid element including lateral wall region having projected connecting pieces. A trim cover assembly of the seat includes: a peripheral end area or margin defined in a container mounting hole formed in the trim cover assembly; and connecting slits formed in that margin. In assembly, the connecting pieces are inserted through those flanged portion, while simultaneously the margin of trim cover assembly is sandwiched between the flanged portion and lateral wall region. Those free ends are flattened to connecting slits, respectively, so that free ends of the connecting pieces project from the connect together all the container body, container lid element and trim cover assembly. Finally, the trim cover assembly is attached upon a foam padding, with the container body inserted in a recession of the foam padding.
    • 用于容纳小物品的容器包括:容器主体,其包括形成有连接狭缝的凸缘部分; 以及容器盖元件,其包括具有突出连接件的侧壁区域。 座椅的装饰罩组件包括:限定在形成在装饰罩组件中的容器安装孔中的周边端部区域或边缘; 以及在该边缘处形成的连接狭缝。 在组装时,连接件插入通过这些凸缘部分,同时,装饰盖组件的边缘夹在凸缘部分和侧壁区域之间。 这些自由端分别平坦化为连接狭缝,使得连接件的自由端从所有容器主体,容器盖元件和装饰罩组件连接在一起突出。 最后,装饰盖组件被连接在泡沫填充物上,容器主体插入泡沫填充物的凹陷中。
    • 7. 发明申请
    • VEHICLE LAMP
    • 车灯
    • US20090262549A1
    • 2009-10-22
    • US12427428
    • 2009-04-21
    • Takashi INOUEMasaru SASAKI
    • Takashi INOUEMasaru SASAKI
    • B60Q1/00
    • F21S41/00F21S41/14F21S41/141F21S41/147F21S41/255F21S41/321F21S45/47F21S45/49F21S48/328F21V29/75F21V29/76
    • A vehicle lamp includes a semiconductor light emitting device, a thermally conductive portion which is in contact with the semiconductor light emitting device, a heatsink which dissipates heat generated by the semiconductor light emitting device, and a housing in which the semiconductor light emitting device, the thermally conductive portion and the heatsink are accommodated. The heatsink includes a base and plate fins arranged at intervals to protrude from the base. Each of the plate fins includes a plate surface facing the plate surface of an adjacent one of the plate fins and upwardly extending in a direction along the base. A plane parallel to at least one of the plate surfaces of the plate fins may be oblique with respect to a vertical direction. An inner surface of the housing may be oblique with respect to the vertical direction in a region above the plate fins.
    • 车灯包括半导体发光器件,与半导体发光器件接触的导热部分,散发由半导体发光器件产生的热的散热器,以及壳体,其中半导体发光器件, 导热部分和散热片被容纳。 散热器包括基板和板状散热片,其间隔设置成从基座突出。 每个板翅片包括面对相邻的一个板翅片的板表面的板表面,并沿着基部的方向向上延伸。 平行于板翅片的至少一个板表面的平面可以相对于垂直方向倾斜。 壳体的内表面可以在板翅片上方的区域中相对于垂直方向倾斜。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR
    • 半导体器件和场效应晶体管
    • US20130113028A2
    • 2013-05-09
    • US13393002
    • 2010-06-23
    • Hironobu MIYAMOTOYasuhiro OKAMOTOYuji ANDOTatsuo NAKAYAMATakashi INOUEKazuki OTAKazuomi ENDO
    • Hironobu MIYAMOTOYasuhiro OKAMOTOYuji ANDOTatsuo NAKAYAMATakashi INOUEKazuki OTAKazuomi ENDO
    • H01L29/78
    • H01L29/8122H01L29/0657H01L29/2003H01L29/201H01L29/205H01L29/41741H01L29/41766H01L29/4236H01L29/7809H01L29/7812H01L29/7813H01L29/8128
    • A semiconductor device comprises a substrate 1, a first n-type semiconductor layer 21′, a second n-type semiconductor layer 23, a p-type semiconductor layer 24, and a third n-type semiconductor layer 25′, wherein the first n-type semiconductor layer 21′, the second n-type semiconductor layer 23, the p-type semiconductor layer 24, and the third n-type semiconductor layer 25′ are laminated at the upper side of the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 21′ and the source electrode 12 is in ohmic-contact with the third n-type semiconductor layer 25′. A gate electrode 14 is arranged so as to fill an opening portion to be filled that extends from the third n-type semiconductor layer 25′ to the second n-type semiconductor layer 23, and the gate electrode 14 is in contact with the upper surface of the second n-type semiconductor layer 23, the side surfaces of the p-type semiconductor layer 24, and the side surfaces of the third n-type semiconductor layer 25′. The second n-type semiconductor layer 23 has composition that changes from the drain electrode 13 side toward the source electrode 12 side in the direction perpendicular to the plane of the substrate 1 and contains donor impurity.
    • 半导体器件包括衬底1,第一n型半导体层21',第二n型半导体层23,p型半导体层24和第三n型半导体层25',其中第一n型半导体层 型半导体层21',第二n型半导体层23,p型半导体层24和第三n型半导体层25'依次层叠在基板1的上侧。 漏电极13与第一n型半导体层21'欧姆接触,源电极12与第三n型半导体层25'欧姆接触。 栅电极14被布置成填充从第三n型半导体层25'延伸到第二n型半导体层23的待填充的开口部分,并且栅电极14与上表面 第二n型半导体层23,p型半导体层24的侧表面和第三n型半导体层25'的侧表面。 第二n型半导体层23具有从垂直于基板1的平面的方向从漏电极13侧向源电极12侧变化的成分,并且含有施主杂质。