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1. 发明申请

US20100124125A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20100124125A1
公开(公告)日：2010-05-20
申请号：US12619952
申请日：2009-11-17
申请人： Masakazu AMANAI , Masahiko KASHIMURA , Yoshihiro NAGAI , Masato TAKI , Norihiro HONDA , Kazushi YAMANAKA
发明人： Masakazu AMANAI , Masahiko KASHIMURA , Yoshihiro NAGAI , Masato TAKI , Norihiro HONDA , Kazushi YAMANAKA
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/28
摘要： A nonvolatile memory device includes a memory cell that stores data by presence or absence of electrons accumulated in a floating gate, a read reference current generator that generates a read reference current for reading data from the memory cell based on a constant current from a constant current generator included therein, and a read voltage generator that generates a read voltage to be applied to a control gate of the memory cell during data reading. The read reference current generator generates a monitor voltage that varies according to variation of the read reference current and a threshold voltage of the memory cell. The read voltage generator generates the read voltage based on the monitor voltage.
摘要翻译：非易失性存储器件包括存储单元，其通过存在或不存在在浮置栅极中累积的电子来存储数据;读取参考电流发生器，其基于来自恒定电流的恒定电流产生用于从存储器单元读取数据的读取参考电流以及读取电压发生器，其在数据读取期间产生要施加到存储器单元的控制栅极的读取电压。读取的参考电流发生器产生根据读取的参考电流的变化和存储器单元的阈值电压而变化的监视电压。读取电压发生器根据监视电压产生读取电压。

2. 发明申请

US20100301927A1 BOOSTER CIRCUIT 有权
标题翻译：升压电路
公开(公告)号：US20100301927A1
公开(公告)日：2010-12-02
申请号：US12776586
申请日：2010-05-10
申请人： Yoshihiro NAGAI , Masakazu AMANAI , Masahiko KASHIMURA , Masato TAKI , Norihiro HONDA , Kazushi YAMANAKA
发明人： Yoshihiro NAGAI , Masakazu AMANAI , Masahiko KASHIMURA , Masato TAKI , Norihiro HONDA , Kazushi YAMANAKA
IPC分类号： G05F1/10
CPC分类号： H02M3/073 , H02M2003/076
摘要： Booster circuit comprising: first transistor that is connected to first node; capacitor that has one end connected to first node, and that is charged with voltage of first node when first transistor is activated; and control signal generating circuit that provides control terminal of first transistor with control signal being in accordance with first clock, wherein when first transistor is de-activated, capacitor boosts voltage of first node to first voltage by voltage being applied to or end of capacitor, voltage applied to or end being at least ½ as great as first supply voltage, and control signal generating circuit sets voltage of control signal when first transistor is de-activated to be first voltage of first node, and sets voltage of control signal when first transistor is activated to be voltage, difference between voltage and first voltage being equal to or smaller than value of first supply voltage.
摘要翻译：加速电路，包括：连接到第一节点的第一晶体管; 电容器，其一端连接到第一节点，并且当第一晶体管被激活时被充满第一节点的电压; 以及控制信号发生电路，其向第一晶体管的控制端提供与第一时钟相关的控制信号，其中当第一晶体管被去激活时，电容器通过施加到电容器的电压或其末端的电压将第一节点的电压提升为第一电压，施加到或终止的电压至少为第一电源电压的1/2，并且当第一晶体管被去激活时，控制信号发生电路将控制信号的电压设置为第一节点的第一电压，并且当第一晶体管被激活为电压，电压和第一电压之间的差等于或小于第一电源电压的值。

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