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1. 发明授权

US07838439B2 Method of manufacturing an insulating film containing hafnium 失效
标题翻译：制造含有铪的绝缘膜的方法
公开(公告)号：US07838439B2
公开(公告)日：2010-11-23
申请号：US12146835
申请日：2008-06-26
申请人： Masaharu Oshima , Haruhiko Takahashi , Koji Usuda , Ziyuan Liu , Liu Guo-lin , Kazuto Ikeda , Masaki Yoshimaru
发明人： Masaharu Oshima , Haruhiko Takahashi , Koji Usuda , Ziyuan Liu , Liu Guo-lin , Kazuto Ikeda , Masaki Yoshimaru
IPC分类号： H01L21/31 , H01L21/469 , H01L21/336
CPC分类号： H01L21/28176 , H01L21/28035 , H01L29/513 , H01L29/517
摘要： A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.
摘要翻译：层叠膜具有在硅层上形成的含有铪的绝缘膜和形成在绝缘膜上的多晶硅层。层叠的膜在含氧和氮气的气氛中加热，其总压力近似等于氮的分压。

2. 发明授权

US4419213A Oxygen sensing element formed as laminate of thin layers on substrate provided with heater and lead wires 失效
标题翻译：在具有加热器和引线的基板上形成为薄层的层压体的氧传感元件
公开(公告)号：US4419213A
公开(公告)日：1983-12-06
申请号：US348265
申请日：1982-02-12
申请人： Masaharu Oshima , Kenji Ikezawa , Hiroyuki Aoki
发明人： Masaharu Oshima , Kenji Ikezawa , Hiroyuki Aoki
IPC分类号： G01N27/12 , G01N27/407 , G01N27/409 , G01N27/413 , G01N27/416 , G01N27/58
CPC分类号： G01N27/4071
摘要： An oxygen sensing element of the type having a solid electrolyte oxygen concentration cell formed as a laminate of thin layers on a ceramic substrate in which a heater is embedded and end portions of lead wires are inserted. To enhance reliability of insulation between a lead wire through which heater current flows and lead wires connected to the concentration cell electrodes, the end portion of the heater lead wire is inserted into the substrate so as to make close contact with a terminal portion of the heater over substantially the entire length thereof and is completely shielded from environmental atmosphere by the substrate. Accordingly, even though a carbonaceous substance may be deposited on the substrate surface during practical use of the element, the possibility of heater current leaking of the concentration cell is obviated.
摘要翻译：一种具有固体电解质氧浓度单元的氧传感元件，该固体电解质氧浓度单元在其中插入有加热器并插入引线的端部的陶瓷基板上形成为薄层的层压体。为了提高加热器电流流过的引线与与浓度电池电极连接的引线之间的绝缘的可靠性，将加热器引线的端部插入到基板中，以与加热器的端子部紧密接触并且基本上完全被环境气氛所遮蔽。因此，即使在元件的实际使用中可能在基板表面上沉积含碳物质，也避免了浓缩池的加热器电流泄漏的可能性。

3. 发明申请

US20110136036A1 CARBON CATALYST, METHOD FOR PRODUCING CARBON CATALYST, FUEL CELL, ELECTRICITY STORAGE DEVICE, AND USE OF CARBON CATALYST 审中-公开
标题翻译：碳催化剂，生产碳催化剂的方法，燃料电池，电力储存装置和碳催化剂的使用
公开(公告)号：US20110136036A1
公开(公告)日：2011-06-09
申请号：US12996245
申请日：2009-06-04
申请人： Seizo Miyata , Masaharu Oshima , Jun-ichi Ozaki , Kazuo Saito , Shogo Moriya , Kyosuke Iida , Takeaki Kishimoto
发明人： Seizo Miyata , Masaharu Oshima , Jun-ichi Ozaki , Kazuo Saito , Shogo Moriya , Kyosuke Iida , Takeaki Kishimoto
IPC分类号： B01J21/18 , H01M4/90 , H01M4/583 , B01J31/28 , B01J31/02 , H01M4/88 , B01J37/04 , C25B15/00
CPC分类号： H01M4/8652 , C01B32/05 , H01G11/34 , H01G11/38 , H01M4/587 , H01M4/8882 , H01M4/90 , H01M4/9083 , H01M4/96 , H01M2008/1095 , Y02E60/13
摘要： The present invention is made to provide a carbon catalyst which has high catalytic activity and can achieve high catalyst performance.A carbon catalyst has nitrogen introduced therein. The value of energy peak area ratio of a first nitrogen atom whose electron in the is orbital has a binding energy of 398.5±1.0 eV to a second nitrogen atom whose electron in the is orbital has a binding energy of 401±1.0 eV (i.e., the value of (the first nitrogen atom)/(the second nitrogen atom)) of the introduced nitrogen is 1.2 or less.
摘要翻译：本发明提供一种具有高催化活性并可实现高催化剂性能的碳催化剂。碳催化剂在其中引入氮。电子在轨道中的第一氮原子的能量峰面积比值与398.5±1.0eV的结合能相对于其轨道中的电子具有401±1.0eV的结合能（即，导入氮的（第一氮原子）/（第二氮原子）的值为1.2以下。

4. 发明授权

US09373849B2 Carbon catalyst, method for producing carbon catalyst, fuel cell, electricity storage device, and use of carbon catalyst 有权
标题翻译：碳催化剂，碳催化剂的制造方法，燃料电池，蓄电装置以及碳催化剂的使用
公开(公告)号：US09373849B2
公开(公告)日：2016-06-21
申请号：US13931073
申请日：2013-06-28
申请人： Seizo Miyata , Masaharu Oshima , Jun-ichi Ozaki , Kazuo Saito , Shogo Moriya , Kyosuke Iida , Takeaki Kishimoto
发明人： Seizo Miyata , Masaharu Oshima , Jun-ichi Ozaki , Kazuo Saito , Shogo Moriya , Kyosuke Iida , Takeaki Kishimoto
IPC分类号： H01M4/86 , C01B31/02 , H01G9/26 , H01G11/38 , H01M4/587 , H01M4/88 , H01M4/90 , H01M4/96 , H01M8/1018 , H01G11/34 , H01M8/10
CPC分类号： H01M4/8652 , C01B32/05 , H01G11/34 , H01G11/38 , H01M4/587 , H01M4/8882 , H01M4/90 , H01M4/9083 , H01M4/96 , H01M2008/1095 , Y02E60/13
摘要： A carbon catalyst which has high catalytic activity and can achieve high catalyst performance is provided. The carbon catalyst comprises nitrogen. The energy peak area ratio of the first nitrogen atom whose electron in the 1s orbital has a binding energy of 398.5±1.0 eV to the second nitrogen atom whose electron in the 1s orbital has a binding energy of 401±1.0 eV (i.e., the value of (the first nitrogen atom)/(the second nitrogen atom)) of the nitrogen introduced into the catalyst is 1.2 or less.
摘要翻译：提供了具有高催化活性并可实现高催化剂性能的碳催化剂。碳催化剂包括氮气。 1s轨道中的电子的第一个氮原子的能量峰面积比与第一氮原子的结合能为398.5±1.0eV，其中1s轨道中的电子具有401±1.0eV的结合能（即，值（第一氮原子）/（第二氮原子））为1.2以下。

5. 发明授权

US07964924B2 Magnetoresistance effect device and magnetism sensor using the same 失效
标题翻译：磁阻效应器和使用其的磁传感器
公开(公告)号：US07964924B2
公开(公告)日：2011-06-21
申请号：US10514711
申请日：2002-05-24
申请人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
发明人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
IPC分类号： H01L29/82
CPC分类号： H01F10/1936 , B82Y25/00 , G01R33/09 , G01R33/093 , G01R33/1269 , H01L27/222 , H01L43/08 , Y10T428/12465
摘要： A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 μm disposed at intervals of not more than 1 μm, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.
摘要翻译：磁阻效应器件（1）包括：半导体区域（2），具有设置有不大于100μm的间隔不大于1μm的多个隔离金属微粒（3）的表面，半导体区域（2），半导体或用于覆盖半导体区域的半金属盖层（4）和设置在盖层的表面上并彼此分离的多个电极（5）。该装置在室温下表现出高的磁阻效应，对磁场高度敏感，并且可以通过简单的制造工艺制造。该器件由容易匹配半导体制造工艺的耐磁材料形成。使用该装置（1）的磁场传感器具有各种优异的特性。

6. 发明申请

US20060145182A1 Nitride semiconductor element and method for manufacturing thereof 审中-公开
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US20060145182A1
公开(公告)日：2006-07-06
申请号：US10563630
申请日：2004-03-26
申请人： Hiroshi Fujioka , Masaharu Oshima
发明人： Hiroshi Fujioka , Masaharu Oshima
IPC分类号： H01L33/00
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L29/045 , H01L29/2003 , H01L33/007
摘要： Disclosed is a method for the preparation of a nitride semiconductor device having a nitride semiconductor layer composed of InN on which a high quality layer of a semiconductor of a nitride of a group III element typified by InN or GaN is grown as traversing dislocation or an interfacing layer is suppressed from being generated. The method includes a vapor depositing step of vapor depositing InN on the (111) plane of a yttria stabilized zirconia substrate (12) for forming the nitride semiconductor layer oriented with c-axis of an InN crystal of the hexagonal system substantially vertical with respect to the (111) plane of the substrate (12).
摘要翻译：公开了一种制备氮化物半导体器件的方法，该氮化物半导体器件具有由InN组成的氮化物半导体层，其中以InN或GaN为代表的III族元素的氮化物的半导体的高质量层生长为穿越位错或接口层被抑制生成。该方法包括在氧化钇稳定的氧化锆衬底（111）的（111）面上气相沉积InN的气相沉积步骤，用于形成氮化物半导体层，该氮化物半导体层以六边形系统的InN晶体的c轴相对于衬底（12）的（111）面。

7. 发明申请

US20060099437A1 Magnetoresistance effect device and magnetism sensor using the same 失效
标题翻译：磁阻效应器和使用其的磁传感器
公开(公告)号：US20060099437A1
公开(公告)日：2006-05-11
申请号：US10514711
申请日：2002-05-24
申请人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
发明人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
IPC分类号： H01F1/00
CPC分类号： H01F10/1936 , B82Y25/00 , G01R33/09 , G01R33/093 , G01R33/1269 , H01L27/222 , H01L43/08 , Y10T428/12465
摘要： A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 μm disposed at intervals of not more than 1 μm, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.
摘要翻译：磁阻效应器件（1）包括半导体区域（2），其具有设置有不大于1um的间隔设置的不大于100μm的多个隔离金属微粒（3）的表面，半导体或用于覆盖半导体区域的半金属盖层（4）和设置在盖层的表面上并彼此分离的多个电极（5）。该装置在室温下表现出高的磁阻效应，对磁场高度敏感，并且可以通过简单的制造工艺制造。该器件由容易匹配半导体制造工艺的耐磁材料形成。使用该装置（1）的磁场传感器具有各种优异的特性。

8. 发明申请

US20130288888A1 CARBON CATALYST, METHOD FOR PRODUCING CARBON CATALYST, FUEL CELL, ELECTRICITY STORAGE DEVICE, AND USE OF CARBON CATALYST 有权
标题翻译：碳催化剂，生产碳催化剂的方法，燃料电池，电力储存装置和碳催化剂的使用
公开(公告)号：US20130288888A1
公开(公告)日：2013-10-31
申请号：US13931073
申请日：2013-06-28
申请人： Seizo MIYATA , Masaharu Oshima , Jun-ichi Ozaki , Kazuo Saito , Shogo Moriya , Kyosuke Iida , Takeaki Kishimoto
发明人： Seizo MIYATA , Masaharu Oshima , Jun-ichi Ozaki , Kazuo Saito , Shogo Moriya , Kyosuke Iida , Takeaki Kishimoto
IPC分类号： H01M4/86
CPC分类号： H01M4/8652 , C01B32/05 , H01G11/34 , H01G11/38 , H01M4/587 , H01M4/8882 , H01M4/90 , H01M4/9083 , H01M4/96 , H01M2008/1095 , Y02E60/13
摘要： A carbon catalyst which has high catalytic activity and can achieve high catalyst performance is provided. The carbon catalyst comprises nitrogen. The energy peak area ratio of the first nitrogen atom whose electron in the 1s orbital has a binding energy of 398.5±1.0 eV to the second nitrogen atom whose electron in the 1s orbital has a binding energy of 401±1.0 eV (i.e., the value of (the first nitrogen atom)/(the second nitrogen atom)) of the nitrogen introduced into the catalyst is 1.2 or less.
摘要翻译：提供了具有高催化活性并可实现高催化剂性能的碳催化剂。碳催化剂包括氮气。 1s轨道中的电子的第一个氮原子的能量峰面积比与第一氮原子的结合能为398.5±1.0eV，其中1s轨道中的电子具有401±1.0eV的结合能（即，值（第一氮原子）/（第二氮原子））为1.2以下。

9. 发明申请

US20070247901A1 Mesoscopic Magnetic Body Having Circular Single Magnetic Domain Structure, its Production Method, and Magnetic Recording Device Using the Same 审中-公开
标题翻译：具有圆形单磁畴结构的介观磁体，其制造方法和使用其的磁记录装置
公开(公告)号：US20070247901A1
公开(公告)日：2007-10-25
申请号：US10559483
申请日：2004-06-04
申请人： Hiroyuki Akinaga , Kanta Ono , Masaharu Oshima , Toshiyuki Taniuchi
发明人： Hiroyuki Akinaga , Kanta Ono , Masaharu Oshima , Toshiyuki Taniuchi
IPC分类号： G11C11/15 , G11C11/14 , H01F10/08 , H01F7/02
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , G11C11/155 , G11C11/5607 , H01F41/308 , H01L43/08 , H01L43/10 , Y10T29/49069
摘要： The present invention provides a mesoscopic magnetic body comprising a tabular ferromagnetic body whose planar shape has an axis of symmetry, but which is not symmetric in the direction perpendicular to the axis of symmetry, and wherein the magnetic body shows a circular single domain structure upon removal of the external parallel magnetic field. MRAMs which apply such a mesoscopic magnet and production methods thereof are also provided. As a result, it is possible to control the magnetization direction in nano-scale mesoscopic magnets as well as eliminate the limitation on the number of times in rewriting and writing.
摘要翻译：本发明提供一种介观磁体，其包括平板状铁磁体，其平面形状具有对称轴线，但在垂直于对称轴线的方向上不对称，并且其中磁体在移除时呈现圆形单结构域结构的外部并联磁场。还提供了应用这种介观磁体的MRAM及其制造方法。结果，可以控制纳米尺度介观磁体中的磁化方向，并且消除对重写和写入次数的限制。

10. 发明授权

US06808740B2 Magnetoresistance effect film and method of forming same 失效
标题翻译：磁阻效应膜及其形成方法
公开(公告)号：US06808740B2
公开(公告)日：2004-10-26
申请号：US10462683
申请日：2003-06-17
申请人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
发明人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
IPC分类号： B05D500
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/09 , G11B5/376 , G11B5/3993 , G11B2005/3996 , H01F10/193 , H01F10/324 , H01F10/3254 , Y10T428/12465 , Y10T428/12681
摘要： A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.
摘要翻译：磁阻效应膜包括基板，设置在基板上的多个铁磁性粒子，沉积在基板上并覆盖多个铁磁性粒子的非磁性膜，以及配置在非磁性膜上的一对电极，通过施加磁场来改变一对电极。磁阻效应膜通过在不超过300℃的温度下在基板上气相沉积铁磁粒子起始材料来制造，原料气相沉积的量足以覆盖基板表面，厚度范围为0.5至 15nm，并且在基板上形成铁磁性粒子之后，在不超过室温的温度下在铁磁性粒子上气相沉积非磁性膜，该非磁性膜的厚度范围为1〜100nm，并且提供一对电极各自位于非磁性膜上的预定位置。

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