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1. 发明申请

US20080088982A1 EMR SENSOR AND TRANSISTOR FORMED ON THE SAME SUBSTRATE 有权
标题翻译： EMR传感器和晶体管在相同的基板上形成
公开(公告)号：US20080088982A1
公开(公告)日：2008-04-17
申请号：US11549879
申请日：2006-10-16
申请人： Liesl Folks , Robert E. Fontana , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
发明人： Liesl Folks , Robert E. Fontana , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译：公开了磁感测芯片和制造磁感测芯片的方法。如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

2. 发明授权

US08059373B2 EMR sensor and transistor formed on the same substrate 有权
标题翻译： EMR传感器和晶体管形成在同一基板上
公开(公告)号：US08059373B2
公开(公告)日：2011-11-15
申请号：US11549879
申请日：2006-10-16
申请人： Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
发明人： Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译：公开了磁感测芯片和制造磁感测芯片的方法。如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

3. 发明授权

US07466521B2 EMR structure with bias control and enhanced linearity of signal 失效
标题翻译： EMR结构具有偏置控制和增强的信号线性度
公开(公告)号：US07466521B2
公开(公告)日：2008-12-16
申请号：US11411606
申请日：2006-04-25
申请人： Thomas Dudley Boone, Jr. , Liesl Folks , Stefan Maat
发明人： Thomas Dudley Boone, Jr. , Liesl Folks , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/3993 , G11B2005/0016 , G11C11/14
摘要： An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.
摘要翻译：具有不连续分流结构的非凡磁阻器件EMR。不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构，其包括EMR有源层。异质结构可以包括第一，第二和第三半导体层，第二层夹在第一和第三层之间。中间或第二半导体层提供二维电子气。异质结构具有第一和第二相对侧，一对电压引线和一对与结构的第一侧连接的电流引线。不连续的分流结构与结构的第二侧连接，并且可以是一系列不连续的导电元件，例如半球状金元素的形式。

4. 发明授权

US08035927B2 EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact 有权
标题翻译： EMR磁传感器具有其有源量子阱层延伸超过超过半导体层的端部，具有用于改善电接触的突片和引线结构
公开(公告)号：US08035927B2
公开(公告)日：2011-10-11
申请号：US12021085
申请日：2008-01-28
申请人： Thomas Dudley Boone, Jr. , Liesl Folks , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Jordan Asher Katine , Sergio Nicoletti
发明人： Thomas Dudley Boone, Jr. , Liesl Folks , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Jordan Asher Katine , Sergio Nicoletti
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/095 , G11B5/3993 , H01L43/08 , H01L43/12
摘要： An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.
摘要翻译：具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。然后沉积非磁性金属。然后形成第二掩模结构以限定引线的形状。

5. 发明申请

US20070247763A1 Novel EMR structure with bias control and enhanced linearity of signal 失效
标题翻译：具有偏置控制和增强信号线性度的新型EMR结构
公开(公告)号：US20070247763A1
公开(公告)日：2007-10-25
申请号：US11411606
申请日：2006-04-25
申请人： Thomas Boone , Liesl Folks , Stefan Maat
发明人： Thomas Boone , Liesl Folks , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3993 , G11B2005/0016 , G11C11/14
摘要： An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.
摘要翻译：具有不连续分流结构的非凡磁阻器件EMR。不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构，其包括EMR有源层。异质结构可以包括第一，第二和第三半导体层，第二层夹在第一和第三层之间。中间或第二半导体层提供二维电子气。异质结构具有第一和第二相对侧，一对电压引线和一对与结构的第一侧连接的电流引线。不连续的分流结构与结构的第二侧连接，并且可以是一系列不连续的导电元件，例如半球状金元素的形式。

6. 发明申请

US20090190269A1 SELF-ALIGNED COPLANAR STRUCTURE FOR NARROW-TRACK EMR DEVICES AND A METHOD FOR PRODUCING THE SAME 有权
标题翻译：用于NARROW-TRACK EMR装置的自对准的共侧结构及其制造方法
公开(公告)号：US20090190269A1
公开(公告)日：2009-07-30
申请号：US12021085
申请日：2008-01-28
申请人： Thomas Dudley Boone, JR. , Liesl Folks , Robert E. Fontana, JR. , Bruce Alvin Gurney , Jordan Asher Katine , Sergio Nicoletti
发明人： Thomas Dudley Boone, JR. , Liesl Folks , Robert E. Fontana, JR. , Bruce Alvin Gurney , Jordan Asher Katine , Sergio Nicoletti
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/095 , G11B5/3993 , H01L43/08 , H01L43/12
摘要： An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.
摘要翻译：具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。然后沉积非磁性金属。然后形成第二掩模结构以限定引线的形状。

7. 发明申请

US20130170065A1 SUBSTRATE PATTERNING IN PERPENDICULAR STORAGE MEDIA 有权
标题翻译：基板存储在存储媒体中
公开(公告)号：US20130170065A1
公开(公告)日：2013-07-04
申请号：US13341997
申请日：2011-12-31
申请人： Liesl Folks , Michael K. Grobis , Dan S. Kercher , Ricardo Ruiz , Kentaro Takano , Bruce D. Terris , Qing Zhu
发明人： Liesl Folks , Michael K. Grobis , Dan S. Kercher , Ricardo Ruiz , Kentaro Takano , Bruce D. Terris , Qing Zhu
IPC分类号： G11B19/02 , G11B5/84 , G11B5/66
CPC分类号： G11B5/746 , B82Y10/00 , G11B5/855
摘要： According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a pattern formed on a substrate. The pattern includes at least a first and second feature and an edge defined between the first and second features. Additionally, the magnetic storage medium includes a magnetic layer formed on the pattern. The magnetic layer includes grains separated by a non-magnetic segregant boundary. The segregant boundary is positioned above the edge of the pattern.
摘要翻译：根据一个实施例，本文公开了图案化的磁存储介质。磁存储介质包括形成在基板上的图案。该图案至少包括第一和第二特征以及在第一和第二特征之间限定的边缘。此外，磁存储介质包括形成在图案上的磁性层。磁性层包括由非磁性分离界面分离的晶粒。分离边界位于图案边缘的上方。

8. 发明授权

US08199553B2 Multilevel frequency addressable field driven MRAM 有权
标题翻译：多电平频率可寻址磁场驱动MRAM
公开(公告)号：US08199553B2
公开(公告)日：2012-06-12
申请号：US12640081
申请日：2009-12-17
申请人： Wenyu Chen , Sylvia H. Florez Marino , Liesl Folks , Bruce D. Terris
发明人： Wenyu Chen , Sylvia H. Florez Marino , Liesl Folks , Bruce D. Terris
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.
摘要翻译：三维非易失性存储器阵列器件包括多个存储器元件和存储器控制器。多个存储元件各自具有多个位的堆叠，其又分别包括无磁性层，磁性被钉扎层和非磁性层。无磁性层被配置为基于在无磁性层的谐振频率和施加到无磁层的磁场上的射频电流来交替其磁化取向。磁性固定层具有特定的磁化取向。非磁性层位于磁性自由层和磁性固定层之间。存储器控制器与多个存储器元件中的每一个通信，并被配置为向存储器元件中的多个位写入数据并从其读取数据。

9. 发明授权

US07881020B2 Extraordinary magnetoresistive (EMR) device with novel lead structure 有权
标题翻译：具有新型引线结构的非凡磁阻（EMR）器件
公开(公告)号：US07881020B2
公开(公告)日：2011-02-01
申请号：US11747683
申请日：2007-05-11
申请人： Thomas Dudley Boone, Jr. , Liesl Folks , Bruce Alvin Gurney , Jordan Asher Katine , Ernesto E. Marinero , Neil Smith
发明人： Thomas Dudley Boone, Jr. , Liesl Folks , Bruce Alvin Gurney , Jordan Asher Katine , Ernesto E. Marinero , Neil Smith
IPC分类号： G11B5/39 , H01L29/82 , G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/095 , G11B5/398 , G11B5/3993 , G11C11/14 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.
摘要翻译：描述了具有减小的尺寸和增加的分辨率的非凡的磁阻传感器（EMR传感器）。传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

10. 发明申请

US20080145951A1 High density spin torque three dimensional (3D) memory arrays addressed with microwave current 有权
标题翻译：用微波电流寻址的高密度自旋扭矩三维（3D）存储器阵列
公开(公告)号：US20080145951A1
公开(公告)日：2008-06-19
申请号：US11642277
申请日：2006-12-19
申请人： Liesl Folks , Bruce David Terris
发明人： Liesl Folks , Bruce David Terris
IPC分类号： H01L21/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/5607
摘要： One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
摘要翻译：本发明的一个实施例包括具有多个存储元件的三维存储器阵列，其通过单个顶部引线和单个底部引线耦合以形成阵列，每个存储元件包括无磁性层，其中非易失性数据可以是存储，其中每个存储器元件具有与每个数字存储器状态相关联的独特的谐振频率，从而在并行写入和读取操作期间使得能够进行频率寻址，每个存储元件还包括固定层和形成在自由层和固定层之间的间隔物。

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