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1. 发明授权

US08530988B2 Junction isolation for magnetic read sensor 有权
标题翻译：磁读取传感器的结隔离
公开(公告)号：US08530988B2
公开(公告)日：2013-09-10
申请号：US12976748
申请日：2010-12-22
申请人： Liubo Hong , Guangli Liu
发明人： Liubo Hong , Guangli Liu
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3932 , G11B5/398
摘要： Embodiments generally relate to a magnetic read sensor and a method for its manufacture. A multi-layer insulating material may be used to cover both the first shield layer and also the sidewalls of the sensor structure in the magnetic read sensor. The first insulating layer of the multi-layer insulating material may be deposited by an ion beam sputtering process in a chamber that does not have any oxygen gas flowing into it so that oxygen diffusion into the sensor structure is reduced or eliminated. Then, a second insulating layer of the multi-layer insulating material may be deposited by atomic layer deposition such that the second insulating layer has a greater quality than the first insulating layer. The higher quality increases the breakdown voltage for the magnetic read sensor. Thus, the magnetic read sensor of the present invention has an effective insulating portion that increases the breakdown voltage without sensor damage.
摘要翻译：实施例通常涉及磁读取传感器及其制造方法。多层绝缘材料可用于覆盖磁读取传感器中的第一屏蔽层以及传感器结构的侧壁。多层绝缘材料的第一绝缘层可以通过离子束溅射工艺沉积在不具有任何氧气流入其中的腔室中，从而减少或消除了扩散到传感器结构中的氧气。然后，可以通过原子层沉积来沉积多层绝缘材料的第二绝缘层，使得第二绝缘层具有比第一绝缘层更大的质量。更高的质量增加了磁读取传感器的击穿电压。因此，本发明的磁读取传感器具有有效的绝缘部分，其在没有传感器损坏的情况下增加击穿电压。

2. 发明申请

US20120161264A1 JUNCTION ISOLATION FOR MAGNETIC READ SENSOR 有权
标题翻译：磁性读取传感器的连接隔离
公开(公告)号：US20120161264A1
公开(公告)日：2012-06-28
申请号：US12976748
申请日：2010-12-22
申请人： LIUBO HONG , Guangli Liu
发明人： LIUBO HONG , Guangli Liu
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/12 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3932 , G11B5/398
摘要： Embodiments generally relate to a magnetic read sensor and a method for its manufacture. A multi-layer insulating material may be used to cover both the first shield layer and also the sidewalls of the sensor structure in the magnetic read sensor. The first insulating layer of the multi-layer insulating material may be deposited by an ion beam sputtering process in a chamber that does not have any oxygen gas flowing into it so that oxygen diffusion into the sensor structure is reduced or eliminated. Then, a second insulating layer of the multi-layer insulating material may be deposited by atomic layer deposition such that the second insulating layer has a greater quality than the first insulating layer. The higher quality increases the breakdown voltage for the magnetic read sensor. Thus, the magnetic read sensor of the present invention has an effective insulating portion that increases the breakdown voltage without sensor damage.
摘要翻译：实施例通常涉及磁读取传感器及其制造方法。多层绝缘材料可用于覆盖磁读取传感器中的第一屏蔽层以及传感器结构的侧壁。多层绝缘材料的第一绝缘层可以通过离子束溅射工艺沉积在不具有任何氧气流入其中的腔室中，从而减少或消除了扩散到传感器结构中的氧气。然后，可以通过原子层沉积来沉积多层绝缘材料的第二绝缘层，使得第二绝缘层具有比第一绝缘层更大的质量。更高的质量增加了磁读取传感器的击穿电压。因此，本发明的磁读取传感器具有有效的绝缘部分，其在没有传感器损坏的情况下增加击穿电压。

3. 发明申请

US20130083432A1 MAGNETIC BIAS STRUCTURE FOR MAGNETORESISTIVE SENSOR 审中-公开
标题翻译：磁传感器的磁偏置结构
公开(公告)号：US20130083432A1
公开(公告)日：2013-04-04
申请号：US13249076
申请日：2011-09-29
申请人： Quang Le , Simon H. Liao , Shuxia Wang , Guangli Liu , Yongchul Ahn
发明人： Quang Le , Simon H. Liao , Shuxia Wang , Guangli Liu , Yongchul Ahn
IPC分类号： G11B5/60 , G11B5/127
CPC分类号： G11B5/3163 , G01R33/093 , G11B5/3932 , G11B5/398 , Y10T29/49048
摘要： A magnetic read head having a hard bias structure that both optimizes magnetic bias field and also ensures manufacturability while maintaining sensor stripe height integrity. The read head includes a sensor stack having a back edge and first and second laterally opposed sides. A hard bias structure extending from each of the first and second sides of the sensor stack has a neck portion located near the sensor and having a back edge that is aligned with and parallel to the back edge of the sensor stack. The hard bias structure also includes a flared portion having a back edge that defines an angle relative to the air bearing surface of the read head. The back edge preferably defines and angle of 45-75 degrees relative to the air bearing surface.
摘要翻译：具有硬偏置结构的磁读头，其既优化磁偏置场，又确保可制造性，同时保持传感器条高度的完整性。读头包括具有后边缘和第一和第二横向相对侧的传感器堆叠。从传感器堆叠的第一和第二侧的每一个延伸的硬偏压结构具有位于传感器附近的颈部，并且具有与传感器堆叠的后边缘对准并平行的后边缘。硬偏置结构还包括具有相对于读头的空气支承表面限定角度的后边缘的扩口部分。后边缘优选地限定相对于空气轴承表面45-75度的角度。

4. 发明授权

US08907666B2 Magnetic bias structure for magnetoresistive sensor having a scissor structure 有权
标题翻译：具有剪刀结构的磁阻传感器的磁偏置结构
公开(公告)号：US08907666B2
公开(公告)日：2014-12-09
申请号：US13251100
申请日：2011-09-30
申请人： Quang Le , Simon H. Liao , Shuxia Wang , Guangli Liu , Yongchul Ahn
发明人： Quang Le , Simon H. Liao , Shuxia Wang , Guangli Liu , Yongchul Ahn
IPC分类号： G01R33/02 , G01R33/00 , G01R33/09
CPC分类号： G01R33/0011 , G01R33/0017 , G01R33/093
摘要： A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias structure. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.
摘要翻译：具有改进的磁偏置鲁棒性的新型硬偏置结构的剪刀式磁传感器。该传感器包括传感器堆叠，该传感器堆叠包括由诸如电绝缘阻挡层或导电隔离层之类的非磁性层分开的第一和第二磁性层。第一和第二磁性层具有反平行耦合的磁化，但是通过磁偏置结构在不与空气轴承表面平行或垂直的方向上倾斜。磁偏置结构包括从传感器堆叠的后边缘延伸的颈部，并且具有与传感器堆叠的第一和第二侧对准的第一和第二侧。偏置结构还包括从颈部部分向后延伸的锥形或楔形部分。

5. 发明申请

US20130082696A1 MAGNETIC BIAS STRUCTURE FOR MAGNETORESISTIVE SENSOR HAVING A SCISSOR STRUCTURE 有权
标题翻译：具有扫描结构的磁传感器的磁偏置结构
公开(公告)号：US20130082696A1
公开(公告)日：2013-04-04
申请号：US13251100
申请日：2011-09-30
申请人： Quang Le , Simon H. Liao , Shuxia Wang , Guangli Liu , Yongchul Ahn
发明人： Quang Le , Simon H. Liao , Shuxia Wang , Guangli Liu , Yongchul Ahn
IPC分类号： G01R33/02 , C23F1/04
CPC分类号： G01R33/0011 , G01R33/0017 , G01R33/093
摘要： A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias stricture. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.
摘要翻译：具有改进的磁偏置鲁棒性的新型硬偏置结构的剪刀式磁传感器。该传感器包括传感器堆叠，该传感器堆叠包括由诸如电绝缘阻挡层或导电隔离层之类的非磁性层分开的第一和第二磁性层。第一和第二磁性层具有反平行耦合的磁化，但是通过磁偏置狭窄不能平行于或垂直于空气轴承表面的方向倾斜。磁偏置结构包括从传感器堆叠的后边缘延伸的颈部，并且具有与传感器堆叠的第一和第二侧对准的第一和第二侧。偏置结构还包括从颈部部分向后延伸的锥形或楔形部分。

6. 发明申请

US20110014500A1 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US20110014500A1
公开(公告)日：2011-01-20
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , C23C14/34 , B44C1/22
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

7. 发明授权

US08797694B2 Magnetic sensor having hard bias structure for optimized hard bias field and hard bias coercivity 有权
标题翻译：具有硬偏置结构的磁传感器，用于优化硬偏置场和硬偏置矫顽力
公开(公告)号：US08797694B2
公开(公告)日：2014-08-05
申请号：US13335589
申请日：2011-12-22
申请人： Quang Le , David J. Seagle , Guangli Liu , Yongchul Ahn , Simon H. Liao
发明人： Quang Le , David J. Seagle , Guangli Liu , Yongchul Ahn , Simon H. Liao
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/3932 , G11B2005/3996
摘要： A magnetic read sensor having a hard bias structure that extends beyond the back edge of the sensor stack by a controlled, distance that is chosen to maximize both hard bias field and hard bias magnetic coercivity and anisotropy. The hard bias structure has a back edge that is well defined and that has a square corner at its innermost end adjacent to the sensor stack. The magnetic sensor can be constructed by a process that includes a separate making an milling process that is dedicated to defining the back edge of the hard bias structure.
摘要翻译：具有硬偏压结构的磁读取传感器，其通过受控的距离延伸超过传感器堆叠的后边缘，该距离被选择为最大化硬偏置磁场和硬偏磁磁矫顽力和各向异性。硬偏置结构具有良好限定的后边缘，并且在与传感器堆叠相邻的最内端具有正方形角。磁传感器可以通过包括单独制造专用于限定硬偏压结构的后边缘的铣削过程的工艺来构造。

8. 发明授权

US08609262B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US08609262B2
公开(公告)日：2013-12-17
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , H01L43/08 , H01L29/82 , G01R33/09 , G11C11/16
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

9. 发明申请

US20130163121A1 MAGNETIC SENSOR HAVING HARD BIAS STRUCTURE FOR OPTIMIZED HARD BIAS FIELD AND HARD BIAS COERCIVITY 有权
标题翻译：具有优化硬度偏差的硬偏置结构的磁传感器和硬偏置系数
公开(公告)号：US20130163121A1
公开(公告)日：2013-06-27
申请号：US13335589
申请日：2011-12-22
申请人： Quang Le , David J. Seagle , Guangli Liu , Yongchul Ahn , Simon H. Liao
发明人： Quang Le , David J. Seagle , Guangli Liu , Yongchul Ahn , Simon H. Liao
IPC分类号： G11B5/60 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/3932 , G11B2005/3996
摘要： A magnetic read sensor having a hard bias structure that extends beyond the back edge of the sensor stack by a controlled, distance that is chosen to maximize both hard bias field and hard bias magnetic coercivity and anisotropy. The hard bias structure has a back edge that is well defined and that has a square corner at its innermost end adjacent to the sensor stack. The magnetic sensor can be constructed by a process that includes a separate making an milling process that is dedicated to defining the back edge of the hard bias structure.
摘要翻译：具有硬偏压结构的磁读取传感器，其通过受控的距离延伸超过传感器堆叠的后边缘，该距离被选择为最大化硬偏置磁场和硬偏磁磁矫顽力和各向异性。硬偏置结构具有良好限定的后边缘，并且在与传感器堆叠相邻的最内端具有正方形角。磁传感器可以通过包括单独制造专用于限定硬偏压结构的后边缘的铣削过程的工艺来构造。

10. 发明申请

US20120231296A1 METHOD FOR MANUFACTURING AN ADVANCED MAGNETIC READ SENSOR 审中-公开
标题翻译：制造先进磁性读出传感器的方法
公开(公告)号：US20120231296A1
公开(公告)日：2012-09-13
申请号：US13045724
申请日：2011-03-11
申请人： Quang Le , Jui-Lung Li , Yongchul Ahn , Simon H. Liao , Guangli Liu , Masaya Nishioka
发明人： Quang Le , Jui-Lung Li , Yongchul Ahn , Simon H. Liao , Guangli Liu , Masaya Nishioka
IPC分类号： G11B5/33 , B44C1/22
CPC分类号： G11B5/398 , G01R33/0052 , G01R33/093 , G01R33/098 , G11B5/3163 , H01L43/08 , H01L43/12
摘要： A method for manufacturing a magnetic sensor that minimizes topography resulting from stripe height defining masking and patterning in order to facilitate definition of track width. The method includes depositing a series of mask layers and then masking and ion milling the series of sensor layers to define a back edge of a sensor. A non-magnetic fill layer is then deposited, the magnetic fill layer being constructed of a material that has an ion mill rate that is similar to that of the series of sensor layers. A second masking and milling process is then performed to define the track width of the sensor and hard bias is deposited. Because the non-magnetic fill layer is removed at substantially the same rate as the sensor material the structure has a very flat topography on which to form the sensor track width.
摘要翻译：一种用于制造磁传感器的方法，其使由限定掩模和图案化的条纹高度导致的形貌最小化，以便于轨道宽度的定义。该方法包括沉积一系列掩模层，然后掩蔽和离子铣削该系列传感器层以限定传感器的后边缘。然后沉积非磁性填充层，磁性填充层由具有类似于该系列传感器层的离子磨机速率的材料构成。然后执行第二掩蔽和铣削过程以限定传感器的轨道宽度，并且沉积硬偏置。由于非磁性填充层以与传感器材料基本相同的速率被去除，所以结构具有非常平坦的形状，以形成传感器轨道宽度。

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