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1. 发明授权

US09299940B2 Carbon nanotube network thin-film transistors on flexible/stretchable substrates 有权
标题翻译：碳纳米管网络薄膜晶体管在柔性/可拉伸基板上
公开(公告)号：US09299940B2
公开(公告)日：2016-03-29
申请号：US14065218
申请日：2013-10-28
申请人： Kuniharu Takei , Toshitake Takahashi , Ali Javey
发明人： Kuniharu Takei , Toshitake Takahashi , Ali Javey
IPC分类号： H01L51/05 , B82Y30/00 , H01L51/00
CPC分类号： H01L51/0558 , B82Y30/00 , H01L51/0048 , H01L51/0097 , H01L51/0545
摘要： This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.
摘要翻译：本公开提供了用于柔性薄膜晶体管的系统，方法和装置。一方面，一种器件包括聚合物衬底，设置在聚合物衬底上的栅电极，设置在栅电极上的电介质层和聚合物衬底的暴露部分，设置在电介质层上的碳纳米管网络，以及源极电极和设置在碳纳米管网络上的漏电极。

2. 发明申请

US20140124737A1 CARBON NANOTUBE NETWORK THIN-FILM TRANSISTORS ON FLEXIBLE/STRETCHABLE SUBSTRATES 有权
标题翻译：碳纳米管网络薄膜晶体管在柔性/可拉伸基板上
公开(公告)号：US20140124737A1
公开(公告)日：2014-05-08
申请号：US14065218
申请日：2013-10-28
申请人： Kuniharu Takei , Toshitake Takahashi , Ali Javey
发明人： Kuniharu Takei , Toshitake Takahashi , Ali Javey
IPC分类号： H01L29/775 , H01L29/66
CPC分类号： H01L51/0558 , B82Y30/00 , H01L51/0048 , H01L51/0097 , H01L51/0545
摘要： This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.
摘要翻译：本公开提供了用于柔性薄膜晶体管的系统，方法和装置。一方面，一种器件包括聚合物衬底，设置在聚合物衬底上的栅电极，设置在栅电极上的电介质层和聚合物衬底的暴露部分，设置在电介质层上的碳纳米管网络，以及源极电极和设置在碳纳米管网络上的漏电极。

3. 发明授权

US08525228B2 Semiconductor on insulator (XOI) for high performance field effect transistors 有权
标题翻译：绝缘体半导体（XOI）用于高性能场效应晶体管
公开(公告)号：US08525228B2
公开(公告)日：2013-09-03
申请号：US13175281
申请日：2011-07-01
申请人： Ali Javey , Hyunhyub Ko , Kuniharu Takei
发明人： Ali Javey , Hyunhyub Ko , Kuniharu Takei
IPC分类号： H01L29/772 , H01L29/205 , H01L21/20
CPC分类号： H01L29/78681 , H01L21/2007 , H01L21/8252 , H01L27/0605
摘要： Semiconductor-on-insulator (XOI) structures and methods of fabricating XOI structures are provided. Single-crystalline semiconductor is grown on a source substrate, patterned, and transferred onto a target substrate, such as a Si/SiO2 substrate, thereby assembling an XOI substrate. The transfer process can be conducted through a stamping method or a bonding method. Multiple transfers can be carried out to form heterogenous compound semiconductor devices. The single-crystalline semiconductor can be II-IV or III-V compound semiconductor, such as InAs. A thermal oxide layer can be grown on the patterned single crystalline semiconductor, providing improved electrical characteristics and interface properties. In addition, strain tuning is accomplished via a capping layer formed on the single-crystalline semiconductor before transferring the single-crystalline semiconductor to the target substrate.
摘要翻译：提供绝缘体上半导体（XOI）结构和制造XOI结构的方法。单源半导体在源极衬底上生长，图案化并转移到诸如Si / SiO 2衬底的目标衬底上，从而组装XOI衬底。转印过程可以通过冲压法或粘合法进行。可以进行多次转移以形成异质化合物半导体器件。单晶半导体可以是II-IV或III-V化合物半导体，例如InAs。可以在图案化单晶半导体上生长热氧化物层，从而提供改善的电特性和界面性质。此外，在将单晶半导体转移到目标衬底之前，通过在单晶半导体上形成的覆盖层来实现应变调谐。

4. 发明授权

US09593014B2 Methods of establishing low-resistance electrical contact to carbon nanostructures with graphitic interfacial layer 有权
标题翻译：用石墨界面层建立与碳纳米结构的低电阻电接触的方法
公开(公告)号：US09593014B2
公开(公告)日：2017-03-14
申请号：US13199702
申请日：2011-09-07
申请人： Yang Chai , Arash Hazeghi , Kuniharu Takei , Ali Javey , H. S. Philip Wong
发明人： Yang Chai , Arash Hazeghi , Kuniharu Takei , Ali Javey , H. S. Philip Wong
IPC分类号： B32B9/00 , B82Y10/00 , H01B1/04 , C01B31/02 , B82Y40/00
CPC分类号： B82Y10/00 , B82Y40/00 , C01B32/158 , H01B1/04 , Y10T428/24851 , Y10T428/24917 , Y10T428/25 , Y10T428/30
摘要： A method of conductively coupling a carbon nanostructure and a metal electrode is provided that includes disposing a carbon nanostructure on a substrate, depositing a carbon-containing layer on the carbon nanostructure, according to one embodiment, and depositing a metal electrode on the carbon-containing layer. Further provided is a conductively coupled carbon nanostructure device that includes a carbon nanostructure disposed on a substrate, a carbon-containing layer disposed on the carbon nanostructure and a metal electrode disposed on the carbon-containing layer, where a low resistance coupling between the carbon nanostructure and metal elements is provided.
摘要翻译：提供了一种导电偶联碳纳米结构和金属电极的方法，其包括在基底上设置碳纳米结构，在碳纳米结构上沉积含碳层，并根据一个实施方式将金属电极沉积在含碳层。还提供了一种导电偶合碳纳米结构器件，其包括设置在基底上的碳纳米结构，设置在碳纳米结构上的含碳层和设置在含碳层上的金属电极，其中碳纳米结构之间的低电阻耦合并提供金属元件。

5. 发明申请

US20130059134A1 Methods of establishing low-resistance electrical contact to carbon nanostructures with graphitic interfacial layer 有权
标题翻译：用石墨界面层建立与碳纳米结构的低电阻电接触的方法
公开(公告)号：US20130059134A1
公开(公告)日：2013-03-07
申请号：US13199702
申请日：2011-09-07
申请人： Yang Chai , Arash Hazeghi , Kuniharu Takei , Ali Javey , H.S. Philip Wong
发明人： Yang Chai , Arash Hazeghi , Kuniharu Takei , Ali Javey , H.S. Philip Wong
IPC分类号： B32B3/10 , B32B15/04 , B32B5/16 , B05D5/12 , B32B9/04 , B82Y40/00
CPC分类号： B82Y10/00 , B82Y40/00 , C01B32/158 , H01B1/04 , Y10T428/24851 , Y10T428/24917 , Y10T428/25 , Y10T428/30
摘要： A method of conductively coupling a carbon nanostructure and a metal electrode is provided that includes disposing a carbon nanostructure on a substrate, depositing a carbon-containing layer on the carbon nanostructure, according to one embodiment, and depositing a metal electrode on the carbon-containing layer. Further provided is a conductively coupled carbon nanostructure device that includes a carbon nanostructure disposed on a substrate, a carbon-containing layer disposed on the carbon nanostructure and a metal electrode disposed on the carbon-containing layer, where a low resistance coupling between the carbon nanaostructure and metal elements is provided.
摘要翻译：提供了一种导电偶联碳纳米结构和金属电极的方法，其包括在基底上设置碳纳米结构，在碳纳米结构上沉积含碳层，并根据一个实施方式将金属电极沉积在含碳层。进一步提供了一种导电偶合的碳纳米结构器件，其包括设置在基底上的碳纳米结构，设置在碳纳米结构上的含碳层和设置在含碳层上的金属电极，其中碳纳米结构之间的低电阻耦合并提供金属元件。

6. 发明申请

US20120016261A1 HOLLOW MICROTUBE STRUCTURE, PRODUCTION METHOD THEREOF AND BIOPSY DEVICE 审中-公开
标题翻译：中空微管结构，其生产方法和生物装置
公开(公告)号：US20120016261A1
公开(公告)日：2012-01-19
申请号：US13257721
申请日：2010-03-19
申请人： Makoto Ishida , Takeshi Kawano , Takahiro Kawashima , Kuniharu Takei
发明人： Makoto Ishida , Takeshi Kawano , Takahiro Kawashima , Kuniharu Takei
IPC分类号： A61B10/02 , H01L21/28 , H01L23/48
CPC分类号： A61B5/04001 , A61B5/0017 , A61B5/0084 , A61B10/0233 , A61B2562/028 , B81B2201/055 , B81C1/00111 , H01L2924/0002 , H01L2924/00
摘要： A hollow microtube structure capable of being used as a minimally invasive electrode, a production method thereof, and a biopsy device using the hollow microtube structure. The hollow microtube structure includes a semiconductor substrate and at least one hollow tube formed on a surface of the semiconductor substrate. The hollow tube includes a metal coating film layer on the inner surface and an electrically insulating coating film layer on the outer surface. The semiconductor substrate includes a through hole communicated with an interior of a hollow tube at a location where the hollow tube is formed. The production method includes an etching, a sacrificial layer forming, a metal coating film layer forming, an electrically insulating coating film layer forming, a tip portion removing, and a piercing. The biopsy device can be provided on a substrate side of the hollow microtube structure with at least one of an electric signal transmitter, an optical signal generator, a chemical fluid injector, an electrical measuring device, a chemical measuring device, and an optical measuring device.
摘要翻译：能够用作微创电极的中空微管结构，其制造方法和使用中空微管结构的活检装置。中空微管结构包括半导体衬底和形成在半导体衬底的表面上的至少一个中空管。中空管包括在内表面上的金属涂膜层和外表面上的电绝缘涂膜层。半导体衬底包括在形成中空管的位置处与中空管的内部连通的通孔。制造方法包括蚀刻，牺牲层形成，金属涂膜层形成，电绝缘涂膜层形成，尖端部分去除和穿孔。活检装置可以在电信号发送器，光信号发生器，化学流体注入器，电测量装置，化学测量装置和光学测量装置中的至少一个上设置在中空微管结构的基板侧上。

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