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1. 发明授权

US06992202B1 Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same 失效
标题翻译：三元黄铜矿材料的单源前体及其制备和使用方法
公开(公告)号：US06992202B1
公开(公告)日：2006-01-31
申请号：US10698118
申请日：2003-10-31
申请人： Kulbinder K. Banger , Aloysius F. Hepp , Jerry D. Harris , Michael Hyun-Chul Jin , Stephanie L. Castro
发明人： Kulbinder K. Banger , Aloysius F. Hepp , Jerry D. Harris , Michael Hyun-Chul Jin , Stephanie L. Castro
IPC分类号： C07F19/00 , C23C16/00 , C30B23/00
CPC分类号： C07F5/003 , B82Y10/00 , B82Y30/00 , C23C16/305
摘要： A single source precursor for depositing ternary I-III-VI2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2 stoichiometry “built into” a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.
摘要翻译：用于沉积可用作半导体的三元I-III-VI 2黄铜矿材料的单一源前体。单源前体具有“内置于”单个前体分子结构中的I-III-VI'2化学计量，其在加热或热解时降解以产生所需的I-III-VI 2 三级黄铜矿。单一来源前体有效降解以在低温下产生三元黄铜矿，例如。低于500℃，并且可用于通过喷雾CVD技术沉积薄膜三元黄铜矿层。根据本发明的三元单源前体可用于提供可用作量子点的纳米晶体结构。还提供了制备三元单源前体的方法。

2. 发明申请

US20100086682A1 Process and apparatus utilizing mixed ligand organometallic catalysts for in situ growth of high purity, low defect density carbon nanotubes 有权
公开(公告)号：US20100086682A1
公开(公告)日：2010-04-08
申请号：US11595343
申请日：2006-11-09
申请人： Aloysius F. Hepp , Jerry D. Harris , Dennis Jack Flood
发明人： Aloysius F. Hepp , Jerry D. Harris , Dennis Jack Flood
IPC分类号： C23C16/44
CPC分类号： B82Y30/00 , B01J19/006 , B01J19/26 , B01J2219/00768 , B82Y40/00 , C01B32/162 , Y10S977/843
摘要： The present invention relates to a simple method for the synthesis of fullerenes using a mixture of liquid metallorganic precursors and liquid organic hydrocarbon solvents wherein the mixture is injected in the form of droplets into a multiple heated zone reactor tube in which the droplets are thermally decomposed and fullerenes are formed. The process is useful for the formation of all types of fullerenes, and in particular yields multi-walled carbon nanotubes (MWNTs) with low defect density and controllable wt % of metal impurity atoms. In particular, a method is disclosed that produces as-grown MWNTs with less than 5 wt % metal impurity atoms. Large classes of metallorganic precursors suitable for use in the process are also identified.

3. 发明授权

US07763230B2 Process and apparatus utilizing mixed ligand organometallic catalysts for in situ growth of high purity, low defect density carbon nanotubes 有权
标题翻译：使用混合配体有机金属催化剂用于高纯度，低缺陷密度碳纳米管的原位生长的方法和设备
公开(公告)号：US07763230B2
公开(公告)日：2010-07-27
申请号：US11595343
申请日：2006-11-09
申请人： Aloysius F. Hepp , Jerry D. Harris
发明人： Aloysius F. Hepp , Jerry D. Harris
IPC分类号： D01F9/12
CPC分类号： B82Y30/00 , B01J19/006 , B01J19/26 , B01J2219/00768 , B82Y40/00 , C01B32/162 , Y10S977/843
摘要： The present invention relates to a simple method for the synthesis of fullerenes using a mixture of liquid metallorganic precursors and liquid organic hydrocarbon solvents wherein the mixture is injected in the form of droplets into a multiple heated zone reactor tube in which the droplets are thermally decomposed and fullerenes are formed. The process is useful for the formation of all types of fullerenes, and in particular yields multi-walled carbon nanotubes (MWNTs) with low defect density and controllable wt % of metal impurity atoms. In particular, a method is disclosed that produces as-grown MWNTs with less than 5 wt % metal impurity atoms. Large classes of metallorganic precursors suitable for use in the process are also identified.
摘要翻译：本发明涉及使用液体金属有机前体和液体有机烃溶剂的混合物合成富勒烯的简单方法，其中混合物以液滴的形式注入到其中液滴热分解的多重加热区反应器管中，形成富勒烯。该方法可用于形成所有类型的富勒烯，特别是产生具有低缺陷密度和可控重量％的金属杂质原子的多壁碳纳米管（MWNT）。特别地，公开了一种产生具有小于5wt％金属杂质原子的生长MWNT的方法。还鉴定了适用于该方法的大类金属有机前体。

4. 发明授权

US6008525A Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component 失效
标题翻译：少数载体装置包括包含第13族元素和硫族化物成分的钝化层
公开(公告)号：US6008525A
公开(公告)日：1999-12-28
申请号：US993613
申请日：1997-12-18
申请人： Andrew R. Barron , Aloysius F. Hepp , Phillip P. Jenkins , Andrew N. MacInnes
发明人： Andrew R. Barron , Aloysius F. Hepp , Phillip P. Jenkins , Andrew N. MacInnes
IPC分类号： H01L29/737 , H01L31/0216 , H01L33/44 , H01L23/58 , H01L29/78
CPC分类号： H01L33/44 , H01L29/7371 , H01L31/02161 , H01L31/02167 , Y02E10/50
摘要： A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.
摘要翻译：少数载流子器件包括至少两个不同材料的至少一个结，其中至少一个是半导体，以及在器件的至少一个表面上的钝化层。钝化层包括第13族元素和硫族化物成分。少数载流子器件的实施例包括例如激光二极管，发光二极管，异质结双极晶体管和太阳能电池。

5. 发明授权

US07045246B2 Integrated thin film battery and circuit module 有权
标题翻译：集成薄膜电池和电路模块
公开(公告)号：US07045246B2
公开(公告)日：2006-05-16
申请号：US10420463
申请日：2003-04-22
申请人： Edward J. Simburger , James H. Matsumoto , Paul A. Gierow , Aloysius F. Hepp
发明人： Edward J. Simburger , James H. Matsumoto , Paul A. Gierow , Aloysius F. Hepp
IPC分类号： H01M2/22
CPC分类号： H01M10/425 , H01M6/12 , H01M6/40 , H01M6/42 , H05K1/16 , H05K3/429 , H05K2201/0317 , H05K2201/10037
摘要： One or more thin film battery cells are embedded in a multilayer thin film flexible circuit board supporting electronic devices, such as power regulators, for forming an integrated battery and circuit module. The module can be made using conventional thin film processes. The module is well suited for applications where size and space limitations, such as on spacecraft or credit cards, require the use of ultra thin power sources integrated with respective electronic devices and printed circuits.
摘要翻译：一个或多个薄膜电池单元被嵌入在支撑诸如功率调节器的电子设备的多层薄膜柔性电路板中，用于形成集成电池和电路模块。该模块可以使用传统的薄膜工艺制成。该模块非常适合用于诸如航天器或信用卡等尺寸和空间限制的应用，需要使用与各个电子设备和印刷电路集成的超薄电源。

6. 发明授权

US5760462A Metal, passivating layer, semiconductor, field-effect transistor 失效
标题翻译：金属，钝化层，半导体场效应晶体管
公开(公告)号：US5760462A
公开(公告)日：1998-06-02
申请号：US820183
申请日：1997-03-19
申请人： Andrew R. Barron , Phillip P. Jenkins , Andrew N. MacInnes , Aloysius F. Hepp
发明人： Andrew R. Barron , Phillip P. Jenkins , Andrew N. MacInnes , Aloysius F. Hepp
IPC分类号： H01L23/29 , H01L23/31 , H01L23/58 , H01L29/24 , H01L29/47 , H01L29/51 , H01L29/80 , H01L29/78
CPC分类号： H01L29/517 , H01L23/29 , H01L23/3171 , H01L23/585 , H01L29/24 , H01L29/47 , H01L29/802 , H01L2924/0002 , H01L2924/13063 , H01L2924/13091 , Y10S438/958
摘要： A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.
摘要翻译：多数载流子器件包括本体有源区和大块活性区上的薄膜钝化层。薄膜钝化层包括第13族元素和硫族化物成分。在一个实施例中，多数载流子器件是金属，钝化层，半导体场效应晶体管。晶体管包括有源层和有源层上的薄膜钝化层。薄膜钝化层包括第13族元素和硫族化物成分。源极和漏极触点设置在有源层或钝化层上。栅极触点设置在源极触点和漏极触点之间的钝化层上。

7. 发明授权

US5300320A Chemical vapor deposition from single organometallic precursors 失效
标题翻译：来自单一有机金属前体的化学气相沉积
公开(公告)号：US5300320A
公开(公告)日：1994-04-05
申请号：US903256
申请日：1992-06-23
申请人： Andrew R. Barron , Michael B. Power , Andrew N. MacInnes , Aloysius F. Hepp , Phillip P. Jenkins
发明人： Andrew R. Barron , Michael B. Power , Andrew N. MacInnes , Aloysius F. Hepp , Phillip P. Jenkins
IPC分类号： C23C16/30 , H01L21/20 , H01L21/285 , H01L21/314 , C23C16/00
CPC分类号： H01L21/02568 , C23C16/30 , C23C16/305 , H01L21/02392 , H01L21/02395 , H01L21/0262
摘要： A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate. Electronic or electro-optical circuits or circuit elements can be formed which include passivating/buffer films formed by the method of the invention.
摘要翻译：公开了在基板上形成钝化/缓冲膜的方法。该方法包括将基底加热到足以引起挥发的有机金属前体热解的温度，从而在基底上形成钝化/缓冲膜。有机金属前驱体在前体源处挥发。载气从载体气体源引导穿过前体源，以将挥发的前体从前体源引导到基底。挥发的前体热解并沉积在基材上，从而在基材上形成钝化/缓冲膜。钝化/缓冲膜可以是立方相钝化/缓冲膜。也可以在钝化/缓冲膜上形成氧化物层，从而形成基板，钝化/缓冲膜和氧化物层的复合物。通过本发明的方法形成的立方相钝化/缓冲膜可以与衬底晶格匹配。可以形成包括通过本发明的方法形成的钝化/缓冲膜的电子或电光电路或电路元件。

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