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1. 外观设计

USD411516S Gas diffusion plate for electrode of semiconductor wafer processing apparatus 失效
公开(公告)号：USD411516S
公开(公告)日：1999-06-29
申请号：US59398
申请日：1996-09-10
申请人： Kosuke Imafuku , Shosuke Endo , Kazuo Fukasawa
设计人： Kosuke Imafuku , Shosuke Endo , Kazuo Fukasawa

2. 发明授权

US06391147B2 Plasma treatment method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US06391147B2
公开(公告)日：2002-05-21
申请号：US09738302
申请日：2000-12-15
申请人： Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose
发明人： Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose
IPC分类号： H05H100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32155 , H01J37/32165 , H01J37/3244
摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
摘要翻译：一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活物种影响晶圆。

3. 发明授权

US06264788B1 Plasma treatment method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06264788B1
公开(公告)日：2001-07-24
申请号：US09556133
申请日：2000-04-21
申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
发明人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
IPC分类号： H05H100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.
摘要翻译：一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活物种影响水。

4. 发明授权

US6074518A Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US6074518A
公开(公告)日：2000-06-13
申请号：US225010
申请日：1999-01-04
申请人： Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Hiroshi Tsuchiya , Masayuki Tomoyasu , Yukio Naito , Kazuya Nagaseki , Ryo Nonaka , Keizo Hirose , Yoshio Fukasawa , Akira Koshiishi , Isao Kobayashi
发明人： Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Hiroshi Tsuchiya , Masayuki Tomoyasu , Yukio Naito , Kazuya Nagaseki , Ryo Nonaka , Keizo Hirose , Yoshio Fukasawa , Akira Koshiishi , Isao Kobayashi
IPC分类号： H01J37/32 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.
摘要翻译：等离子体处理装置包括室，以及上部电极和下部电极，其平行地设置在腔室中以预定间隔彼此相对，用于限定电极之间的等离子体产生区域。被处理物体安装在下电极上。向电极提供RF功率，使得在电极之间产生等离子体，从而对被处理物进行等离子体处理。在室内的等离子体产生区域周围设置圆柱形接地电极，用于将等离子体封装在等离子体产生区域中，并具有用于通过处理气体的多个通孔。

5. 发明授权

US5698062A Plasma treatment apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US5698062A
公开(公告)日：1997-12-16
申请号：US533383
申请日：1995-09-25
申请人： Takao Sakamoto , Kazuhiro Tahara , Kenji Momose , Kosuke Imafuku , Shosuke Endo , Yukio Naito , Kazuya Nagaseki , Keizo Hirose
发明人： Takao Sakamoto , Kazuhiro Tahara , Kenji Momose , Kosuke Imafuku , Shosuke Endo , Yukio Naito , Kazuya Nagaseki , Keizo Hirose
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/509 , C23C16/517 , H01J37/32 , C23F1/02 , C23C14/34 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32155 , H01J37/32165 , H01J37/3244
摘要： A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.1, to pass through it but to cut off radio frequency voltage, which has the second frequency f.sub.2, while plasma is being generated.
摘要翻译：一种等离子体处理装置，包括接地室，用于排出室的真空泵，安装有晶片的可动装置，布置在室中的与电容器相对的喷淋电极，用于向晶片供给等离子体产生气体的单元通过淋浴电极的检测器，将具有第一频率f1的射频电压的第一射频电源提供给所述吸入器和淋浴电极，所述第二射频电源用于增加射频电压，所述第二射频电源具有比第一频率f1高的第二频率f2，至少一个至少一个所述电动机和所述淋浴电极，其一次侧连接到所述第一射频电源并且其次级侧连接到所述第一和第二电极的变压器和低布置在变压器的次级侧的电路中，并且用于使具有第一频率f1的射频电压通过而是在等离子体产生时切断具有第二频率f2的射频电压。

6. 发明授权

US6106737A Plasma treatment method utilizing an amplitude-modulated high frequency power 失效
标题翻译：使用调幅高频功率的等离子体处理方法
公开(公告)号：US6106737A
公开(公告)日：2000-08-22
申请号：US94451
申请日：1998-06-10
申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
发明人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/509 , C23C16/517 , H01J37/32
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
摘要翻译：一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活物种影响晶圆。

7. 发明授权

US06544380B2 Plasma treatment method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06544380B2
公开(公告)日：2003-04-08
申请号：US10079600
申请日：2002-02-19
申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
发明人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
IPC分类号： H05H100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.
摘要翻译：一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。该腔室还包括一个可拆卸的挡板，其围绕电极配合。为了开始处理，将基板放置在电极上，并且室被排出或供应气体。然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置房间的开放。这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

8. 发明授权

US6035804A Process chamber apparatus 有权
标题翻译：处理室装置
公开(公告)号：US6035804A
公开(公告)日：2000-03-14
申请号：US186328
申请日：1998-11-05
申请人： Junichi Arami , Shosuke Endo
发明人： Junichi Arami , Shosuke Endo
IPC分类号： C23C14/00 , C23C16/44 , C23F4/00 , H01L21/00 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01L21/6719 , C23C16/44
摘要： A process chamber apparatus includes a process chamber for processing a target such as a semiconductor wafer contained therein. The chamber includes an upper process chamber section having an annular contact surface at a lower end thereof and a lower process chamber section having an annular contact surface at an upper end thereof. A support mechanism supports the process chamber such that the lower section is movable against the upper section in a lateral direction between a process position where both sections are combined with each other and a separation position where both of the sections are separated apart from each other in a lateral direction. The contact surfaces of the upper and lower process chamber sections are inclined with respect to a plane including a movement direction of the lower process chamber section and are brought into contact with each other throughout entire circumferences of the contact surfaces at the process position.
摘要翻译：处理室装置包括用于处理诸如其中所包含的半导体晶片的靶的处理室。所述腔室包括在其下端处具有环形接触表面的上处理室部分和在其上端处具有环形接触表面的下处理室部分。支撑机构支撑处理室，使得下部在两个部分彼此组合的过程位置和两个部分彼此分离的分离位置之间沿横向移动抵靠上部区域横向。上处理室部分和下处理室部分的接触表面相对于包括下处理室部分的移动方向的平面倾斜，并且在处理位置处的接触表面的整个周边彼此接触。

9. 发明授权

US07337745B1 Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor 失效
标题翻译：电极，感受体，等离子体处理装置及制作电极和感受体的方法
公开(公告)号：US07337745B1
公开(公告)日：2008-03-04
申请号：US09667777
申请日：2000-09-22
申请人： Mitsuaki Komino , Hideaki Amano , Shosuke Endo , Toshiaki Fujisato , Yasuharu Sasaki
发明人： Mitsuaki Komino , Hideaki Amano , Shosuke Endo , Toshiaki Fujisato , Yasuharu Sasaki
IPC分类号： C23C16/509 , C23F1/00 , H01L21/306 , C23C16/46
CPC分类号： H01L21/6831
摘要： A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 for attracting and holding an object to be treated, W. The electrostatic chuck is joined to an upper surface of the upper ceramic-metal composite 40A. The electrostatic chuck 28 has nearly the same coefficient of linear thermal expansion as that of the upper ceramic-metal composite 40A. Thus, peeling or cracking of the electrostatic chuck 28 due to the difference in thermal expansion and contraction between the electrostatic chuck 28 and the upper ceramic-metal composite 40A can be prevented.
摘要翻译：基座24包括设置在平面状态的加热器38，设置成从上下夹着加热器38的上下陶瓷金属复合体40A和40B以及用于吸引和保持加热器38的陶瓷静电卡盘28 静电卡盘与上部陶瓷 - 金属复合材料40A的上表面接合。静电卡盘28具有与上部陶瓷 - 金属复合材料40A的线性热膨胀系数几乎相同的线性热膨胀系数因此，可以防止由于静电卡盘28和上部陶瓷 - 金属复合材料40A之间的热膨胀和收缩的差异导致的静电卡盘28的剥离或破裂。

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