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1. 发明申请

US20120149143A1 Method for Manufacturing a Solar Cell 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120149143A1
公开(公告)日：2012-06-14
申请号：US13303227
申请日：2011-11-23
申请人： Keiji WATANABE , Toshiyuki MINE , Akio SHIMA , Tomoko SEKIGUCHI , Ryuta TSUCHIYA
发明人： Keiji WATANABE , Toshiyuki MINE , Akio SHIMA , Tomoko SEKIGUCHI , Ryuta TSUCHIYA
IPC分类号： H01L31/18
CPC分类号： H01L31/02168 , B82Y20/00 , H01L31/0352 , H01L31/035236 , H01L31/055 , H01L31/075 , H01L31/1872 , Y02E10/52 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In the existent method for manufacturing a solar cell, manufacture of a solar cell having a quantum well having a crystalline well layer and capable of controlling the thickness of the well layer was difficult. A quantum well having an amorphous well layer, comprising a barrier layer and an amorphous well layer is formed and then the quantum well having the amorphous well layer is annealed thereby crystallizing the amorphous well layer to form a quantum well having a crystalline well layer. By applying energy density applied to the amorphous well layer at an energy density of 1.26 J/mm2 or more and 28.8 J/mm2 or less, the crystalline well layer can be formed and the lamination structure of the quantum well can be maintained simultaneously.
摘要翻译：在制造太阳能电池的现有方法中，难以制造具有具有结晶阱层并能够控制阱层的厚度的量子阱的太阳能电池。形成具有非晶阱层的量子阱，其包含阻挡层和非晶阱层，然后对具有非晶阱层的量子阱退火，从而使非晶阱层结晶，形成具有结晶阱层的量子阱。通过以1.26J / mm 2以上且28.8J / mm 2以下的能量密度施加到非晶质阱层的能量密度，可以形成结晶阱层，同时可以维持量子阱的层叠结构。

2. 发明申请

US20090267047A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090267047A1
公开(公告)日：2009-10-29
申请号：US12430539
申请日：2009-04-27
申请人： Yoshitaka SASAGO , Riichiro TAKEMURA , Masaharu KINOSHITA , Toshiyuki MINE , Akio SHIMA , Hideyuki MATSUOKA , Mutsuko HATANO , Norikatsu TAKAURA
发明人： Yoshitaka SASAGO , Riichiro TAKEMURA , Masaharu KINOSHITA , Toshiyuki MINE , Akio SHIMA , Hideyuki MATSUOKA , Mutsuko HATANO , Norikatsu TAKAURA
IPC分类号： H01L47/00
CPC分类号： H01L27/2481 , H01L21/02532 , H01L21/02675 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146
摘要： The present invention can promote the large capacity, high performance and high reliability of a semiconductor memory device by realizing high-performance of both the semiconductor device and a memory device when the semiconductor memory device is manufactured by stacking a memory device such as ReRAM or the phase change memory and the semiconductor device. After a polysilicon forming a selection device is deposited in an amorphous state at a low temperature, the crystallization of the polysilicon and the activation of impurities are briefly performed with heat treatment by laser annealing. When laser annealing is performed, the recording material located below the silicon subjected to the crystallization is completely covered with a metal film or with the metal film and an insulating film, thereby making it possible to suppress a temperature increase at the time of performing the annealing and to reduce the thermal load of the recording material.
摘要翻译：本发明可以通过实现半导体器件和存储器件的高性能来促进半导体存储器件的大容量，高性能和高可靠性，当半导体存储器件通过堆叠诸如ReRAM的存储器件或相变存储器和半导体器件。在低温下以非晶态沉积形成选择器件的多晶硅后，通过激光退火的热处理来简单地进行多晶硅的结晶化和杂质的活化。当进行激光退火时，位于被结晶的硅下方的记录材料完全被金属膜或金属膜和绝缘膜覆盖，从而可以抑制进行退火时的温度升高并降低记录材料的热负荷。

3. 发明申请

US20110001179A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110001179A1
公开(公告)日：2011-01-06
申请号：US12820468
申请日：2010-06-22
申请人： Itaru YANAGI , Digh HISAMOTO , Daisuke OKADA , Atushi YOSHITOMI , Yasufumi MORIMOTO , Toshiyuki MINE
发明人： Itaru YANAGI , Digh HISAMOTO , Daisuke OKADA , Atushi YOSHITOMI , Yasufumi MORIMOTO , Toshiyuki MINE
IPC分类号： H01L27/115 , H01L29/788
CPC分类号： H01L29/42344 , G11C16/0408 , H01L27/11568 , H01L29/40117 , H01L29/66833 , H01L29/792
摘要： In a non-volatile memory in which charge is injected from a gate electrode to a charge accumulating layer, charge injection efficiency, charge retention characteristic and reliability are all improved compared with a conventional gate structure. In a nonvolatile memory which carries out write/erasure by changing the total charge amount by injecting electrons and holes into a silicon nitride film which makes up a charge accumulating layer, in order to highly efficiently carry out charge injection from a gate electrode, the gate electrode of a memory cell is made up of a two-layer film of a non-doped polysilicon layer and a metal material electrode layer.
摘要翻译：在从栅电极向电荷累积层注入电荷的非易失性存储器中，与常规栅极结构相比，电荷注入效率，电荷保持特性和可靠性都得到改善。在通过将电子和空穴注入构成电荷积聚层的氮化硅膜中来改变总电荷量而进行写入/擦除的非易失性存储器中，为了从栅电极高效地进行电荷注入，存储单元的电极由非掺杂多晶硅层和金属材料电极层的两层膜构成。

4. 发明申请

US20090065848A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090065848A1
公开(公告)日：2009-03-12
申请号：US12186488
申请日：2008-08-05
申请人： Hirotaka HAMAMURA , Itaru YANAGI , Toshiyuki MINE
发明人： Hirotaka HAMAMURA , Itaru YANAGI , Toshiyuki MINE
IPC分类号： H01L21/28 , H01L29/51
CPC分类号： H01L29/4234 , H01L21/28273 , H01L29/66825 , H01L29/792
摘要： A charge holding insulating film in a memory cell is constituted by a laminated film composed of a bottom insulating film, a charge storage film, and a top insulating film on a semiconductor substrate. Further, by performing a plasma nitriding treatment to the bottom insulating film, a nitride region whose nitrogen concentration has a peak value and is 1 atoms or more is formed on the upper surface side in the bottom insulating film. The thickness of the nitride region is set to 0.5 nm or more and 1.5 nm or less, and the peak value of nitrogen concentration is set to 5 atom % or more and 40 atom % or less, and a position of the peak value of nitrogen concentration is set within 2 nm from the upper surface of the bottom insulating film, thereby suppressing an interaction between the bottom insulating film and the charge storage film.
摘要翻译：存储单元中的电荷保持绝缘膜由半导体衬底上的底部绝缘膜，电荷存储膜和顶部绝缘膜构成的层叠膜构成。此外，通过对底部绝缘膜进行等离子体氮化处理，在底部绝缘膜的上表面侧形成氮浓度为1以上的氮浓度的氮化物区域。将氮化物区域的厚度设定为0.5nm以上至1.5nm以下，将氮浓度的峰值设定为5原子％以上且40原子％以下，将氮的峰值的位置浓度从底部绝缘膜的上表面设定在2nm以内，从而抑制底部绝缘膜与电荷存储膜之间的相互作用。

5. 发明申请

US20120248422A1 OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光学半导体器件及其制造方法
公开(公告)号：US20120248422A1
公开(公告)日：2012-10-04
申请号：US13432678
申请日：2012-03-28
申请人： Toshiyuki MINE , Masaaki Fujimori , Naofumi Ohashi
发明人： Toshiyuki MINE , Masaaki Fujimori , Naofumi Ohashi
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L51/5256
摘要： In a device having an anode electrode, an organic EL layer, and a cathode electrode formed on a substrate in this order from a main surface side of the substrate, and an encapsulating film provided on the substrate so as to cover the emission layer, the encapsulating film includes a laminated film obtained by alternately laminating buffer films serving as flattening films and barrier films having high moisture barrier property, and the flattening film and the barrier film include a silicon oxynitride film. In the manufacturing process of the device, the buffer film including silicon oxynitride is formed by an optical CVD method using vacuum ultraviolet light, and in this process, radical irradiation by remote plasma is performed during the irradiation of the vacuum ultraviolet light.
摘要翻译：在从衬底的主表面侧依次形成在基板上的阳极电极，有机EL层和阴极电极的装置以及设置在基板上以覆盖发光层的封装膜，封装膜包括通过交替层叠用作平坦化膜的缓冲膜和具有高阻隔性的阻挡膜获得的层压膜，并且该平坦化膜和阻挡膜包括氧氮化硅膜。在该装置的制造工序中，通过使用真空紫外光的光CVD法形成包含氮氧化硅的缓冲膜，在该过程中，在真空紫外光的照射期间进行远程等离子体的自由基照射。

6. 发明申请

US20100129998A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100129998A1
公开(公告)日：2010-05-27
申请号：US12695271
申请日：2010-01-28
申请人： Hirotaka HAMAMURA , Itaru YANAGI , Toshiyuki MINE
发明人： Hirotaka HAMAMURA , Itaru YANAGI , Toshiyuki MINE
IPC分类号： H01L21/28
CPC分类号： H01L29/4234 , H01L21/28273 , H01L29/66825 , H01L29/792
摘要： A charge holding insulating film in a memory cell is constituted by a laminated film composed of a bottom insulating film, a charge storage film, and a top insulating film on a semiconductor substrate. Further, by performing a plasma nitriding treatment to the bottom insulating film, a nitride region whose nitrogen concentration has a peak value and is 1 atom % or more is formed on the upper surface side in the bottom insulating film. The thickness of the nitride region is set to 0.5 nm or more and 1.5 nm or less, and the peak value of nitrogen concentration is set to 5 atom % or more and 40 atom % or less, and a position of the peak value of nitrogen concentration is set within 2 nm from the upper surface of the bottom insulating film, thereby suppressing an interaction between the bottom insulating film and the charge storage film.
摘要翻译：存储单元中的电荷保持绝缘膜由半导体衬底上的底部绝缘膜，电荷存储膜和顶部绝缘膜构成的层叠膜构成。此外，通过对底部绝缘膜进行等离子体氮化处理，在底部绝缘膜的上表面侧形成氮浓度为1原子％以上的氮化物区域。将氮化物区域的厚度设定为0.5nm以上至1.5nm以下，将氮浓度的峰值设定为5原子％以上且40原子％以下，将氮的峰值的位置浓度从底部绝缘膜的上表面设定在2nm以内，从而抑制底部绝缘膜与电荷存储膜之间的相互作用。

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