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1. 发明授权

US4556807A Pressure transducer with temperature compensation circuit 失效
标题翻译：带温度补偿电路的压力传感器
公开(公告)号：US4556807A
公开(公告)日：1985-12-03
申请号：US522227
申请日：1983-08-11
申请人： Kazuji Yamada , Hideo Sato , Kazuo Kato , Takao Sasayama , Kanji Kawakami , Ryosaku Kanzawa
发明人： Kazuji Yamada , Hideo Sato , Kazuo Kato , Takao Sasayama , Kanji Kawakami , Ryosaku Kanzawa
IPC分类号： G01L9/04 , G01B7/16 , G01L9/00 , G01L9/06
CPC分类号： G01L9/0054 , G01L9/065 , Y10S323/907
摘要： A pressure transducer is disclosed comprising a pressure sensor portion having gage resistors in bridge formed on a thin diaphragm of a semiconductor substrate, and a power supply connected to the pressure sensor portion for driving the pressure sensor. The power supply includes a first current source for supplying a temperature-dependent current equivalent to the sum of a current almost proportional to the absolute temperature and a current independent of temperature, and a second current source for sinking the current almost proportional to the temperature characteristic of the gage resistors from the current of the first current source. A temperature compensation circuit is additionally provided to drive the bridge circuit by the difference between the temperature-dependent current and the current proportional to the temperature characteristic in a constant-current driving mode, and by a voltage proportional to the current difference when the output of the bridge circuit is connected to an amplifier whose gain is dependent on temperature.
摘要翻译：公开了一种压力传感器，包括压电传感器部分，该压力传感器部分具有形成在半导体衬底的薄膜上的桥中的量规电阻器，以及连接到用于驱动压力传感器的压力传感器部分的电源。电源包括用于提供等效于与绝对温度几乎成比例的电流和独立于温度的电流的和的温度相关电流的第一电流源，以及用于将大体上与温度特性成比例的电流吸收的第二电流源的电流从第一个电流源的电流。另外提供温度补偿电路以通过温度相关电流和与恒定电流驱动模式中的温度特性成比例的电流之间的差异来驱动桥式电路，并且通过与当电流差异的电流成比例的电压来驱动桥式电路桥接电路连接到增益取决于温度的放大器。

2. 发明授权

US4604899A Semiconductor-type pressure transducer 失效
标题翻译：半导体式压力传感器
公开(公告)号：US4604899A
公开(公告)日：1986-08-12
申请号：US597753
申请日：1984-04-06
申请人： Kazuji Yamada , Hideo Sato , Kanji Kawakami , Kazuo Kato , Takao Sasayama
发明人： Kazuji Yamada , Hideo Sato , Kanji Kawakami , Kazuo Kato , Takao Sasayama
IPC分类号： G01R27/02 , G01B7/16 , G01D3/028 , G01L1/22 , G01L9/00 , G01L9/04 , G01L9/06 , G01L19/04
CPC分类号： G01L1/2281 , G01L9/065
摘要： A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gauge resistor changing with an external force. Each gauge resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator for cancelling the effect of the temperature change of the gauge resistors making up the bridge circuit on the amplification factor of the amplification circuit for amplifying the output of the bridge circuit.
摘要翻译：公开了一种半导体型压力传感器，其中通过使用至少包括用外力改变的量规电阻器的桥式电路将压力变化检测为电阻变化。每个规格电阻由半导体的PN结制成。压力传感器还包括放大系数补偿器，用于抵消构成桥式电路的量规电阻器的温度变化对放大电路的放大系数的影响，用于放大桥式电路的输出。

3. 发明授权

US4558238A Pressure transducer using integrated circuit elements 失效
标题翻译：使用集成电路元件的压力传感器
公开(公告)号：US4558238A
公开(公告)日：1985-12-10
申请号：US536870
申请日：1983-09-29
申请人： Kazuji Yamada , Hideo Sato , Yukitaka Kitadate , Kanji Kawakami , Kazuo Kato , Takao Sasayama
发明人： Kazuji Yamada , Hideo Sato , Yukitaka Kitadate , Kanji Kawakami , Kazuo Kato , Takao Sasayama
IPC分类号： G01L9/04 , G01L9/00 , G01L9/06
CPC分类号： G01L9/065 , Y10S323/907
摘要： A pressure transducer comprises a pressure sensor including a bridge connection of gauging resistors formed on a semiconductor substrate, and a power supply connected to the pressure sensor for driving it and basically acting as a constant current source. The power supply includes at least two transistors formed on the semiconductor substrate. One of the transistors provides a collector current which is less in temperature-dependency relative to that of the other transistor, and the other transistor has a collector circuit connected to the pressure sensor and provides a collector current corresponding to a sum of a substantially temperature-dependent current and a substantially temperature-independent current. A ratio of the temperature-dependent current to the temperature-independent current is adjusted by selecting operation characteristics of the two transistors such that a temperature characteristic of the collector current of the other transistor is substantially inversely proportional to a temperature characteristic of the output of the pressure sensor when it is driven with a constant voltage.
摘要翻译：压力传感器包括压力传感器，该压力传感器包括形成在半导体衬底上的测量电阻器的桥连接器，以及连接到压力传感器的电源，用于驱动它并基本上作为恒定电流源。电源包括形成在半导体衬底上的至少两个晶体管。晶体管中的一个提供了相对于另一个晶体管的温度依赖性较小的集电极电流，另一个晶体管具有连接到压力传感器的集电极电路，并且提供对应于基本上温度相关的总和的集电极电流，依赖电流和基本上温度无关的电流。通过选择两个晶体管的工作特性来调节温度依赖电流与独立于温度的电流的比例，使得另一个晶体管的集电极电流的温度特性与输出的温度特性成反比压力传感器用恒定电压驱动时。

4. 发明授权

US4291293A Semiconductor absolute pressure transducer assembly and method 失效
标题翻译：半导体绝对压力传感器组件及方法
公开(公告)号：US4291293A
公开(公告)日：1981-09-22
申请号：US76813
申请日：1979-09-19
申请人： Kazuji Yamada , Seiko Suzuki , Motohisa Nishihara , Kanji Kawakami , Hideo Sato , Shigeyuki Kobori , Ryosaku Kanzawa , Minoru Takahashi , Hitoshi Minorikawa
发明人： Kazuji Yamada , Seiko Suzuki , Motohisa Nishihara , Kanji Kawakami , Hideo Sato , Shigeyuki Kobori , Ryosaku Kanzawa , Minoru Takahashi , Hitoshi Minorikawa
IPC分类号： G01L9/04 , G01L9/00 , H01L23/08 , H01L29/84 , G01L1/22
CPC分类号： G01L9/0042 , G01L9/0054
摘要： A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.
摘要翻译：一种半导体压力传感器组件，包括硅膜组件和玻璃覆盖件。硅膜组件具有通过蚀刻形成的薄硅的圆形隔膜部分和其周围的厚的支撑部分。在硅膜组件上形成压阻电桥电路的压阻元件和用于电连接的导电路径。在硅膜组件的表面上形成均匀厚度的二氧化硅钝化层，并且在钝化层的表面上进一步在硅膜组件的支撑部分上形成多晶硅层。在钝化层中，形成接触窗，多晶硅层通过该接触窗电连接到硅膜组件。使用阳极接合方法将具有圆形孔的硼硅酸盐玻璃的覆盖部件安装并接合到与硅多晶硅层接触的硅膜组件上。并且经处理的硅膜组件具有平坦的表面，在其上使用离子注入方法构建压阻元件和导电路径，或者在去除扩散过程中用作掩模的另一二氧化硅层之后重新形成二氧化硅层。

5. 发明授权

US4550612A Integrated pressure sensor 失效
标题翻译：集成压力传感器
公开(公告)号：US4550612A
公开(公告)日：1985-11-05
申请号：US615524
申请日：1984-05-31
申请人： Kazuji Yamada , Shigeyuki Kobori , Satoshi Shimada , Ryosaku Kanzawa , Ryoichi Kobayashi , Hideo Sato
发明人： Kazuji Yamada , Shigeyuki Kobori , Satoshi Shimada , Ryosaku Kanzawa , Ryoichi Kobayashi , Hideo Sato
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84 , G01L9/06
CPC分类号： H01L29/84 , G01L9/0054
摘要： In an integrated pressure sensor, a silicon chip for pressure detection and a substrate for supporting the silicon chip are made of the same material, the silicon chip has a thin diaphragm portion and a peripheral fixed portion thicker than the diaphragm portion, and the silicon chip is bonded to the substrate through a thin insulating film.
摘要翻译：在集成压力传感器中，用于压力检测的硅芯片和用于支撑硅芯片的基板由相同的材料制成，硅芯片具有薄膜部分和比膜部分厚的周边固定部分，硅芯片通过薄的绝缘膜与基板结合。

6. 发明授权

US4670969A Method of making silicon diaphragm pressure sensor 失效
标题翻译：制造硅膜压力传感器的方法
公开(公告)号：US4670969A
公开(公告)日：1987-06-09
申请号：US694990
申请日：1985-01-25
申请人： Kazuji Yamada , Yutaka Kobayashi , Kanji Kawakami , Satoshi Shimada , Masanori Tanabe , Shigeyuki Kobori
发明人： Kazuji Yamada , Yutaka Kobayashi , Kanji Kawakami , Satoshi Shimada , Masanori Tanabe , Shigeyuki Kobori
IPC分类号： H01L29/84 , G01L9/00 , G01P15/08 , H01L21/428
CPC分类号： G01L9/0042 , G01P15/0802 , G01P2015/084 , Y10S148/012 , Y10S148/159 , Y10S148/168 , Y10T29/42 , Y10T29/49103
摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.
摘要翻译：制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。在氧化物膜上形成多晶硅层。在形成多晶硅层之前可以部分地去除氧化膜。将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。在单晶硅层上可以外延生长另外的单晶硅层。通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

7. 发明授权

US4591780A Constant current source device having a ratio metricity between supply voltage and output current 失效
标题翻译：恒流源装置具有电源电压和输出电流之间的比率
公开(公告)号：US4591780A
公开(公告)日：1986-05-27
申请号：US559467
申请日：1983-12-08
申请人： Kazuji Yamada , Ryoichi Kobayashi , Yasuo Nagai , Isao Shimizu , Kanji Kawakami
发明人： Kazuji Yamada , Ryoichi Kobayashi , Yasuo Nagai , Isao Shimizu , Kanji Kawakami
IPC分类号： H03F3/343 , G05F3/26 , G05F3/30 , H03F3/34 , H03F3/347 , G05F3/20
CPC分类号： G05F3/30 , G05F3/265
摘要： A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage. The ratio between a voltage drop caused across the second resistor by a reference current flowing through the first resistor, the collector and emitter of the first transistor and the second resistor, and a voltage drop caused across the third resistor by an emitter current of the second transistor, which is substantially equal to a collector current of the second transistor flowing through the load, is set to a predetermined value. The emitter area of the second transistor is enlarged beyond that of the first transistor to obtain a sufficiently large output current.
摘要翻译：电流源装置控制流过负载的电流的变化率，使得电流的变化率等于电源电压波动的变化率。第一晶体管经由连接到其集电极的第一电阻器和连接到其发射极的第二电阻器馈送电源电压。第二晶体管具有连接到第一晶体管的基极的基极，连接到第三电阻器的发射极和连接到负载的集电极。通过负载，第二晶体管的集电极和发射极以及第三电阻从供电电压馈送到负载的电流。第一晶体管的集电极和基极分别连接到具有馈送有电源电压的集电极的第三晶体管的基极和发射极。通过流过第一电阻器的参考电流，第一晶体管的集电极和发射极以及第二电阻器在第二电阻器之间引起的电压降之间的比率以及由第二电阻器的发射极电流引起的第三电阻器的电压降基本上等于流过负载的第二晶体管的集电极电流的晶体管被设定为预定值。第二晶体管的发射极面积比第一晶体管的发射极面积增大，以获得足够大的输出电流。

8. 发明授权

US5661343A Power hybrid integrated circuit apparatus 失效
标题翻译：电力混合集成电路设备
公开(公告)号：US5661343A
公开(公告)日：1997-08-26
申请号：US405791
申请日：1995-03-16
申请人： Masaaki Takahashi , Kazuji Yamada , Hideki Miyazaki , Kazuo Kato
发明人： Masaaki Takahashi , Kazuji Yamada , Hideki Miyazaki , Kazuo Kato
IPC分类号： H05K1/05 , H01L23/14 , H01L25/16 , H05K1/03 , H05K1/14 , H05K3/22 , H01L23/34
CPC分类号： H05K1/142 , H01L23/142 , H01L25/16 , H01L2224/45124 , H01L2224/48091 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/19041 , H01L2924/19105 , H05K1/0306 , H05K1/0313 , H05K2201/1028 , H05K3/0061 , H05K3/222
摘要： An input-output wiring for the power circuit and a ground layer are formed on a metal substrate of a power hybrid integrated circuit apparatus. A plurality of windows are opened at predetermined positions of a circuit substrate to which electronic parts such as an IC driver, a chip resistor etc. are connected. Ceramic chips are soldered on the exposed surface of the metal substrate in the windows, and the power semiconductor elements are connected through metal bridges on the ceramic chips. Connection between lower electrode of adjoining power semiconductor elements or between lower part of the power semiconductor element and an input/output wiring is made by means of a part of the metal bridge.
摘要翻译：用于电力电路和接地层的输入输出布线形成在功率混合集成电路装置的金属基板上。在电路基板的与IC驱动器，片式电阻等电子部件连接的规定位置开放多个窗口。陶瓷芯片焊接在窗户的金属基板的露出面上，功率半导体元件通过陶瓷芯片上的金属桥连接。相邻的功率半导体元件的下电极之间或功率半导体元件的下部与输入/输出布线之间的连接通过金属桥的一部分制成。

9. 发明授权

US4480478A Pressure sensor employing semiconductor strain gauge 失效
标题翻译：采用半导体应变片的压力传感器
公开(公告)号：US4480478A
公开(公告)日：1984-11-06
申请号：US466027
申请日：1983-02-14
申请人： Hideo Sato , Motohisa Nishihara , Kazuji Yamada , Seikou Suzuki
发明人： Hideo Sato , Motohisa Nishihara , Kazuji Yamada , Seikou Suzuki
IPC分类号： G01L9/04 , G01B7/16 , G01D3/028 , G01L9/00 , G01L9/06 , G01L19/04 , H01L29/84
CPC分类号： G01L9/065
摘要： Four semiconductor strain gauges constitute a bridge circuit. This bridge circuit and a sensitivity temperature compensation circuit are connected in series, and a constant voltage is applied to the series circuit. The sensitivity temperature compensation circuit varies a voltage across the bridge circuit, depending upon temperatures. The constant voltage is divided to produce a predetermined voltage. The predetermined voltage is selected to be equal to the voltage of one output side node of the bridge circuit at the time when the semiconductor strain gauges are unstrained and at a predetermined temperature. The point of this voltage and the output side node are connected through a resistor so as to perform zero-point temperature compensation.
摘要翻译：四个半导体应变计构成桥接电路。该桥式电路和灵敏度温度补偿电路串联连接，并向串联电路施加恒定电压。灵敏度温度补偿电路根据温度改变桥接电路两端的电压。将恒定电压分压以产生预定电压。选择预定电压等于当半导体应变计未受限制并处于预定温度时桥接电路的一个输出侧节点的电压。该电压和输出侧节点通过电阻连接，以进行零点温度补偿。

10. 发明授权

US4404539A Semiconductor strain gauge 失效
标题翻译：半导体应变计
公开(公告)号：US4404539A
公开(公告)日：1983-09-13
申请号：US236934
申请日：1981-02-23
申请人： Kazuji Yamada , Motohisa Nishihara , Hideo Sato , Seiko Suzuki , Ryoichi Kobayashi
发明人： Kazuji Yamada , Motohisa Nishihara , Hideo Sato , Seiko Suzuki , Ryoichi Kobayashi
IPC分类号： G01L9/04 , G01L9/00 , G01L9/06 , H01L29/84 , G01L1/22
CPC分类号： G01L9/0054 , G01L9/065
摘要： A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.
摘要翻译：半导体应变仪布置为具有四个压阻元件的桥，每个压阻元件包括低杂质浓度扩散部分和重掺杂扩散部分。在桥中彼此相对的两个低杂质浓度扩散部分的电阻值大于其它两个较低杂质浓度部分的电阻值。选择重掺杂扩散部分的电阻，使得压阻元件的电阻相等。然而，由于低杂质部分的电阻温度系数大于高杂质部分的电阻温度系数，所以桥臂的整体电阻温度系数将不同。这允许桥接器的零点电压总是随着温度的升高而增加。

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