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1. 发明申请

US20060289921A1 Method of manufacturing a capacitor for semiconductor device 审中-公开
标题翻译：制造用于半导体器件的电容器的方法
公开(公告)号：US20060289921A1
公开(公告)日：2006-12-28
申请号：US11514248
申请日：2006-09-01
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L29/94
CPC分类号： H01L28/56 , H01L21/02186 , H01L21/02197 , H01L21/02205 , H01L21/0228 , H01L21/02304 , H01L21/3141 , H01L21/321 , H01L27/0629 , H01L28/55 , H01L28/65
摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.
摘要翻译：一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在本发明的电容器中，可以抑制下电极的氧化，优异的可以保持薄介电层的特性。

2. 发明授权

US07892917B2 Method for forming bismuth titanium silicon oxide thin film 有权
标题翻译：形成铋钛氧化硅薄膜的方法
公开(公告)号：US07892917B2
公开(公告)日：2011-02-22
申请号：US12153104
申请日：2008-05-14
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： H01L21/8242
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
摘要翻译：具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

3. 发明授权

US07135207B2 Chemical vapor deposition method using alcohol for forming metal oxide thin film 有权
公开(公告)号：US07135207B2
公开(公告)日：2006-11-14
申请号：US10355221
申请日：2003-01-31
申请人： Yo-sep Min , Young-jin Cho , Jung-hyun Lee
发明人： Yo-sep Min , Young-jin Cho , Jung-hyun Lee
IPC分类号： C23C16/18
CPC分类号： C23C16/40 , C23C16/45553
摘要： Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas during the deposition process, as it uses alcohol vapor including no radical oxygen as a reactant gas for the deposition of a thin film. Also, since the thin film is deposited by the thermal decomposition, which is caused by the chemical reaction between the alcohol vapor and a precursor, the deposition rate is fast. Particularly, the deposition rate is also fast when a metal-organic complex with β-diketone ligands is used as a precursor. Further, a thin film with low leakage current can be obtained as the metal oxide thin film fabrication method using a chemical vapor deposition or atomic layer deposition method grows a thin film with fine microstructure.

4. 发明申请

US20050202684A1 METHOD OF MANUFACTURING INORGANIC NANOTUBE 有权
标题翻译：无机纳米生产方法
公开(公告)号：US20050202684A1
公开(公告)日：2005-09-15
申请号：US10464860
申请日：2003-06-19
申请人： Yo-sep Min , Eun-ju Bae , Won-bong Choi , Young-jin Cho , Jung-hyun Lee
发明人： Yo-sep Min , Eun-ju Bae , Won-bong Choi , Young-jin Cho , Jung-hyun Lee
IPC分类号： B82B3/00 , C01B31/02 , C01G55/00 , C23C14/14 , C23C16/01 , C23C16/40 , C23C16/44 , C30B25/00 , H01L21/31
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/08 , C01G55/00 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2004/64 , C30B25/00 , C30B29/605 , Y10S977/893
摘要： A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD), and removing the CNT to obtain an inorganic nanotube or an inorganic nanotube array, respectively.
摘要翻译：使用碳纳米管（CNT）作为模板制造无机纳米管的方法包括制备在其上形成CNT或CNT阵列的模板，通过在模板上沉积无机材料在CNT上形成无机薄膜，使用原子层沉积（ALD），并分别去除CNT以获得无机纳米管或无机纳米管阵列。

5. 发明授权

US07374994B2 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film 失效
标题翻译：铋钛氧化硅，铋钛氧化硅薄膜，以及薄膜形成方法
公开(公告)号：US07374994B2
公开(公告)日：2008-05-20
申请号：US11136456
申请日：2005-05-25
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： H01L21/8242
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
摘要翻译：具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

6. 发明授权

US07105401B2 Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same 失效
标题翻译：半导体装置用电容器及其制造方法以及使用该半导体装置的电子装置
公开(公告)号：US07105401B2
公开(公告)日：2006-09-12
申请号：US10930953
申请日：2004-09-01
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L21/8242
CPC分类号： H01L28/56 , H01L21/3141 , H01L21/321 , H01L27/0629 , H01L28/55 , H01L28/65
摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In an embodiment, the method of fabricating includes absorbing CO on a surface of a lower electrode of a platinum group metal, placing the lower electrode under a reducing atmosphere to produce a lattice oxygen, using the lattice oxygen to form a thin dielectric layer by performing an ALD process using a precursor for the thin dielectric layer, and forming an upper electrode of a platinum group metal on the thin dielectric layer.
摘要翻译：一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在一个实施方案中，制造方法包括在下电极的表面上吸收CO 铂族金属，将下电极置于还原气氛下以产生晶格氧，使用晶格氧通过使用用于薄介电层的前体进行ALD工艺形成薄介电层，并形成上电极铂族金属在薄介电层上。

7. 发明申请

US20050272200A1 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film 失效
公开(公告)号：US20050272200A1
公开(公告)日：2005-12-08
申请号：US11136456
申请日：2005-05-25
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： C01B33/00 , C01G29/00 , C04B35/475 , C23C14/06 , C23C16/42 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L29/51 , H01L21/473
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

8. 发明申请

US20050042836A1 Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same 失效
标题翻译：半导体装置用电容器及其制造方法以及使用该半导体装置的电子装置
公开(公告)号：US20050042836A1
公开(公告)日：2005-02-24
申请号：US10930953
申请日：2004-09-01
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/06 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L21/20
CPC分类号： H01L28/56 , H01L21/3141 , H01L21/321 , H01L27/0629 , H01L28/55 , H01L28/65
摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.
摘要翻译：一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在本发明的电容器中，可以抑制下电极的氧化，优异的可以保持薄介电层的特性。

9. 发明授权

US06752869B2 Atomic layer deposition using organometallic complex with &bgr;-diketone ligand 失效
标题翻译：使用有机金属络合物与β-二酮配体的原子层沉积
公开(公告)号：US06752869B2
公开(公告)日：2004-06-22
申请号：US10160111
申请日：2002-06-04
申请人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
IPC分类号： C30B2504
CPC分类号： C23C16/45542 , C23C16/40 , C23C16/405 , C23C16/45553 , C23C16/5096
摘要： An atomic layer deposition (ALD) method, whereby an organometallic complex with a &bgr;-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a &bgr;-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with &bgr;-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.
摘要翻译：原子层沉积（ALD）方法，其中具有β-二酮配体的有机金属络合物被化学吸附到基底上并被活性氧自由基氧化以在基底上沉积原子金属氧化物层，使用使用等离子体产生的活性氧自由基，具有β-二酮配体作为前体的有机金属配合物，其不能用于使用氧或水作为氧化剂的热ALD方法，以解决和解决使用有机金属络合物除去有机物质的问题，二酮配体，从而使ALD前体多样化，并在低温下形成优异的氧化膜。

10. 发明授权

US08143660B2 Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same 失效
标题翻译：具有高介电常数的氧化膜的制造方法，使用该方法形成的电介质膜的电容器及其制造方法
公开(公告)号：US08143660B2
公开(公告)日：2012-03-27
申请号：US10797046
申请日：2004-03-11
申请人： Jung-hyun Lee , Burn-seok Seo , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Burn-seok Seo , Yo-sep Min , Young-jin Cho
IPC分类号： H01L27/108
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45525 , C23C16/45529 , C23C16/45531 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/022 , H01L21/02205 , H01L21/02304 , H01L21/3142 , H01L21/31616 , H01L21/31645
摘要： Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrate in an ALD apparatus, (b) depositing a reaction material having a predetermined composition rate of a first element and a second element on the semiconductor substrate, and (c) forming a first high k-dielectric oxide film having the two elements on the semiconductor substrate by oxidizing the reaction material such that the first element and the second element are simultaneously oxidized. In this method, the size of an apparatus is reduced, productivity is enhanced, and manufacturing costs are lowered. Further, the high k-dielectric oxide film exhibits high dielectric constant and low leakage current and trap density. Thus, a capacitor including the high k-dielectric oxide film as a dielectric film also exhibits low leakage current and trap density.
摘要翻译：提供一种制造高k电介质氧化膜的方法，具有使用该方法形成的电介质膜的电容器和制造该电容器的方法。（a）在ALD装置中加载半导体衬底，（b）在半导体衬底上沉积具有第一元素和第二元素的预定组成比的反应材料，制备高k电介质氧化物膜，和（c ）通过氧化反应材料形成具有两个元件的第一高k电介质氧化物膜，以使第一元件和第二元件同时被氧化。在该方法中，装置的尺寸减小，生产率提高，制造成本降低。此外，高k电介质氧化膜表现出高的介电常数和低的漏电流和阱密度。因此，包括作为电介质膜的高k电介质氧化膜的电容器也具有低泄漏电流和阱密度。

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