会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • MICROELECTRONIC MEMORY DEVICES HAVING FLAT STOPPER LAYERS AND METHODS OF FABRICATING THE SAME
    • 具有平面止动层的微电子存储器件及其制造方法
    • US20120037970A1
    • 2012-02-16
    • US13117743
    • 2011-05-27
    • Wonmo ParkHyunchul KimHyodong BanHyunju Lee
    • Wonmo ParkHyunchul KimHyodong BanHyunju Lee
    • H01L29/772H01L21/02
    • H01L27/108H01L21/205H01L27/10817H01L27/10852H01L27/10894H01L28/91
    • Memory devices comprise a microelectronic substrate including a cell array region and a peripheral region adjacent the cell array region, the cell array region including therein an array of memory cells and the peripheral region including therein peripheral circuits for the array of memory cells, the microelectronic substrate including a lower layer that extends across the cell array region and across the peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, the insulating layer extending across the cell array region and the peripheral region and also including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Finally, an array of memory cell capacitor storage nodes is provided in the cell array region that extend beyond the flat stopper layer and that penetrate through the flat stopper layer and the insulating layer. Related methods are also provided.
    • 存储器件包括微电子衬底,其包括单元阵列区域和邻近单元阵列区域的外围区域,单元阵列区域包括存储单元阵列,外围区域包括存储单元阵列的外围电路,微电子衬底 包括延伸穿过电池阵列区域并跨过外围区域并且包括从电池阵列区域到外围区域的平坦外表面的下层。 信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸,并且在下层的平坦外表面上方的周边区域中延伸。 绝缘层设置在下层,绝缘层延伸穿过电池阵列区域和周边区域,并且还包括从电池阵列区域到外围区域的平坦的外表面。 在绝缘层的平坦外表面上设置有平坦的阻挡层,并延伸穿过电池阵列区域和周边区域。 最后,存储单元电容器存储节点阵列设置在单元阵列区域中,该阵列区域延伸超过平坦阻挡层并且穿过平坦阻挡层和绝缘层。 还提供了相关方法。
    • 4. 发明授权
    • Methods of fabricating microelectronic memory devices having flat stopper layers
    • 制造具有平坦塞子层的微电子存储器件的方法
    • US08530324B2
    • 2013-09-10
    • US13117743
    • 2011-05-27
    • Wonmo ParkHyunchul KimHyodong BanHyunju Lee
    • Wonmo ParkHyunchul KimHyodong BanHyunju Lee
    • H01L21/8242
    • H01L27/108H01L21/205H01L27/10817H01L27/10852H01L27/10894H01L28/91
    • Memory devices comprise a microelectronic substrate including a cell array region and a peripheral region adjacent the cell array region, the cell array region including therein an array of memory cells and the peripheral region including therein peripheral circuits for the array of memory cells, the microelectronic substrate including a lower layer that extends across the cell array region and across the peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, the insulating layer extending across the cell array region and the peripheral region and also including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Finally, an array of memory cell capacitor storage nodes is provided in the cell array region that extend beyond the flat stopper layer and that penetrate through the flat stopper layer and the insulating layer. Related methods are also provided.
    • 存储器件包括微电子衬底,其包括单元阵列区域和邻近单元阵列区域的外围区域,单元阵列区域中包括存储单元阵列,外围区域包括存储单元阵列的外围电路,微电子衬底 包括延伸穿过电池阵列区域并跨过外围区域并且包括从电池阵列区域到外围区域的平坦外表面的下层。 信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸,并且在下层的平坦外表面上方的周边区域中延伸。 绝缘层设置在下层,绝缘层延伸穿过电池阵列区域和周边区域,并且还包括从电池阵列区域到外围区域的平坦的外表面。 在绝缘层的平坦外表面上设置有平坦的阻挡层,并延伸穿过电池阵列区域和周边区域。 最后,存储单元电容器存储节点阵列设置在单元阵列区域中,该阵列区域延伸超过平坦阻挡层并且穿过平坦阻挡层和绝缘层。 还提供了相关方法。
    • 7. 发明申请
    • ACCOUNT NOTIFICATIONS FOR REQUIRED INFORMATION TO COMPLETE A FINANCIAL TRANSACTION
    • 完成财务交易所需信息的帐户通知
    • US20150106267A1
    • 2015-04-16
    • US14270772
    • 2014-05-06
    • Hyunju Lee
    • Hyunju Lee
    • G06Q20/42
    • G06Q20/42G06Q20/401G06Q20/405
    • There is provided systems and method for account notifications for required information to complete a financial transaction. A user may establish a user account with a payment provider, where the user account allows the user to receive and transfer funds with other users. The payment provider may require additional information from the user to validate and maintain the user account or to complete monetary transfers. Thus, the payment provider may prepare notifications for the user and transmit the notifications to a user device of the user. The user may provide user input through the user device to complete the notification, where in some cases the user input corresponds to an image from the user. The payment provider may transmit an edit tool to redact information from the image if necessary. The user may request a hold on funds in the user account, or may authorize transactions.
    • 提供了用于完成金融交易所需信息的帐户通知的系统和方法。 用户可以与支付提供商建立用户账户,其中用户账户允许用户接收和转移与其他用户的资金。 付款提供商可能需要来自用户的附加信息来验证和维护用户帐户或完成货币转帐。 因此,支付提供者可以为用户准备通知并将通知发送给用户的用户设备。 用户可以通过用户设备提供用户输入以完成通知,其中在某些情况下用户输入对应于来自用户的图像。 如果需要,支付提供商可以传送编辑工具以从图像中修改信息。 用户可以请求保留用户帐户中的资金,或者可以授权交易。