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    • 9. 发明授权
    • Memory cell and memory
    • 内存单元和内存
    • US09496047B2
    • 2016-11-15
    • US14011606
    • 2013-08-27
    • Jun YangHwong-Kwo LinHua ChenYong LiJu Shen
    • Jun YangHwong-Kwo LinHua ChenYong LiJu Shen
    • G11C7/12G11C17/08G11C7/20
    • G11C17/08G11C7/20
    • In various embodiments, a memory cell and a memory are provided. The memory cell comprises a Static Random Access Memory (SRAM) cell including a reset-set (RS) flip-flop and a Read Only Memory (ROM) cell being connected (or coupled) to the SRAM cell to set logic states of internal latch nodes of the RS flip-flop when the ROM cell is triggered. The size of the memory cells proposed in an embodiment of the invention is much smaller than the sum of the size of ROM cells and the size of SRAM cells with the capacity of the memory cells same as the sum of the capacity of the ROM cells and the capacity of the SRAM cells.
    • 在各种实施例中,提供存储器单元和存储器。 该存储单元包括一个静态随机存取存储器(SRAM)单元,它包括复位(RS)触发器和只读存储器(ROM)单元,该单元被连接(或耦合)到SRAM单元以设置内部锁存器的逻辑状态 当触发ROM单元时,RS触发器的节点。 在本发明的实施例中提出的存储器单元的尺寸远小于ROM单元的尺寸和SRAM单元的尺寸的总和,其中存储器单元的容量与ROM单元的容量和 SRAM单元的容量。