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1. 发明专利

JP2011165884A Display device and manufacturing method thereof 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：JP2011165884A
公开(公告)日：2011-08-25
申请号：JP2010026914
申请日：2010-02-09
申请人： Hitachi Displays Ltd , Panasonic Liquid Crystal Display Co Ltd , パナソニック液晶ディスプレイ株式会社 , 株式会社日立ディスプレイズ
发明人： YAMAKAWA ICHIRO , AKAMATSU NAOTOSHI , GOTO JUN , OUE EIJI , MUTO DAISUKE
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L21/768 , H01L23/522 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To provide a display device having a thin-film transistor, which prevents the deterioration of a transistor characteristic due to contamination elements diffused inside a gate insulating layer, and also to provide a manufacturing method of the display device. SOLUTION: The display device includes a semiconductor layer 104 laminated on the upper side of a substrate 101, a gate electrode 106 laminated on the upper side of the semiconductor layer 104, the gate insulating layer 105 laminated between the semiconductor layer 104 and the gate electrode 106, and the thin-film transistor including a source electrode 112 and a drain electrode 111. At least one of the source electrode 112 and the drain electrode 111 is formed on the upper side of the gate insulating layer 105 and connected to the semiconductor layer via a contact hole 109 formed in the gate insulating layer 105. A side wall film 110 containing a nitrogen compound is formed on the side wall of the contact hole 109. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种具有薄膜晶体管的显示装置，其防止由于在栅极绝缘层内扩散的污染元素引起的晶体管特性的劣化，并且还提供了显示装置的制造方法。解决方案：显示装置包括层叠在基板101的上侧的半导体层104，层叠在半导体层104的上侧的栅电极106，层叠在半导体层104和第二半导体层104之间的栅极绝缘层105 栅电极106和包括源电极112和漏电极111的薄膜晶体管。源电极112和漏电极111中的至少一个形成在栅极绝缘层105的上侧，并连接到通过形成在栅极绝缘层105中的接触孔109形成半导体层。在接触孔109的侧壁上形成含有氮化合物的侧壁膜110.版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009206436A Display device, and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：JP2009206436A
公开(公告)日：2009-09-10
申请号：JP2008049882
申请日：2008-02-29
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： OUE EIJI , MIYAZAWA TOSHIO
IPC分类号： H01L29/786 , H01L21/336 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/417 , H01L29/423 , H01L29/49
CPC分类号： H01L27/1214
摘要： PROBLEM TO BE SOLVED: To provide a display device configured to reduce the manufacture man-hour. SOLUTION: The display device has a thin film transistor TFT which has a gate electrode formed on an upper surface of a gate insulating film formed covering a semiconductor layer across the semiconductor layer, and also has a pair of electrodes disposed on an upper surface of the semiconductor layer opposed to each other with a region on the gate electrode interposed. The thin film transistor is composed of an n-type thin film transistor and a p-type thin film transistor, wherein a gate electrode of at least one of the n-type thin film transistor and p-type thin film transistor has a metal layer which is formed on the gate insulating film side and is made of a material different from the material of the gate electrode, and an LDD layer is formed in a semiconductor layer of at least one of the n-type thin film transistor and p-type thin film transistor. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种配置成减少制造工时的显示装置。解决方案：显示装置具有薄膜晶体管TFT，该薄膜晶体管TFT具有形成在跨越半导体层的覆盖半导体层的栅极绝缘膜的上表面上的栅极，并且还具有设置在上部的一对电极表面与半导体层相对置，并且栅极电极上的区域被插入。薄膜晶体管由n型薄膜晶体管和p型薄膜晶体管组成，其中n型薄膜晶体管和p型薄膜晶体管中的至少一个的栅电极具有金属层其形成在栅极绝缘膜侧，并且由与栅电极的材料不同的材料制成，并且在n型薄膜晶体管和p型晶体管中的至少一种的半导体层中形成LDD层薄膜晶体管。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009070861A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2009070861A
公开(公告)日：2009-04-02
申请号：JP2007234836
申请日：2007-09-11
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： OUE EIJI , KAITO TAKUO , MIYAKE HIDEKAZU , MIYAZAWA TOSHIO , TAKASHINA YUICHIRO
IPC分类号： H01L29/786 , G02F1/1368
CPC分类号： H01L27/1214 , H01L29/66765 , H01L29/78678
摘要： PROBLEM TO BE SOLVED: To provide a display device that has a thin-film transistor avoiding the intrusion or contamination of foreign matters to a gate insulation film and improves reliability in electrical connection through a through hole.
SOLUTION: The display device in which the thin-film transistor is formed on a substrate includes the constitution of the thin-film transistor comprising: a silicon oxide film 3 selectively formed on silicon nitride films 2, 8 formed while covering gate electrodes GT1, GT2 on the substrate; and a semiconductor layer including a pseudo single crystal layer or polycrystalline layer formed at least on the upper surface of the silicon oxide film, wherein drain and source electrodes are formed on the upper surface of the semiconductor layer via a contact layer, the pseudo single crystal layer or polycrystalline layer is formed by crystallizing an amorphous silicon layer, and its peripheral sidewall surface is continuous to a peripheral sidewall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without any stepped portions.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种具有薄膜晶体管的显示装置，其避免异物侵入或污染到栅极绝缘膜，并且通过通孔提高电连接的可靠性。解决方案：在基板上形成薄膜晶体管的显示装置包括：薄膜晶体管的结构，其包括：选择性地形成在覆盖栅电极的氮化硅膜2,3上的氧化硅膜3 GT1，GT2在基材上; 以及至少在氧化硅膜的上表面形成的包含伪单晶层或多晶层的半导体层，其中漏极和源电极经由接触层形成在半导体层的上表面上，伪单晶层或多晶层通过使非晶硅层结晶而形成，并且其周边侧壁表面与假单晶层或多晶层下方的氧化硅膜的周边侧壁表面连续，而没有任何阶梯部分。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2011171053A Display device 有权
标题翻译：显示设备
公开(公告)号：JP2011171053A
公开(公告)日：2011-09-01
申请号：JP2010032439
申请日：2010-02-17
申请人： Hitachi Displays Ltd , Panasonic Liquid Crystal Display Co Ltd , パナソニック液晶ディスプレイ株式会社 , 株式会社日立ディスプレイズ
发明人： ASAI TARO , GOTO JUN , OUE EIJI , ASUMA HIROAKI , NAKAYASHIKI KATSUMI , KURITA MAKOTO
IPC分类号： H05B33/26 , G02F1/1368 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L29/417 , H01L29/786 , H01L51/50 , H05B33/04 , H05B33/10 , H05B33/12 , H05B33/22
CPC分类号： G02F1/13306 , G02F1/136227 , H01L27/1222 , H01L27/124 , H01L27/3248 , H01L27/3276 , H01L29/41733 , H01L29/78666 , H01L29/78675
摘要： PROBLEM TO BE SOLVED: To provide a display device having improved operation efficiency by reducing contact resistance in the through-hole of a source electrode connected to a TFT or a drain electrode. SOLUTION: In the through-hole, a source part of the TFT and the source electrode 8 are connected to each other. The source electrode 8 is formed with three layers of a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a contacting a semiconductor layer and an upper layer 81b contacting the Al alloy. After formed with sputtering, the lower layer 81a of the barrier metal is subjected to heat treatment. Then, the upper layer 81b of the barrier metal, the Al alloy 82 and the cap metal 83 are continuously formed with sputtering. Since the upper layer 81b of the barrier metal contacting the Al alloy 82 is not oxidized, an increase of the contact resistance in the through-hole can be prevented. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：通过降低连接到TFT或漏电极的源电极的通孔中的接触电阻来提供具有改善的操作效率的显示装置。解决方案：在通孔中，TFT的源极部分和源极电极8彼此连接。源电极8由三层阻挡金属，Al合金82和帽金属83形成。阻挡金属被分成与半导体层接触的下层81a和与Al合金接触的上层81b。在溅射形成之后，对阻挡金属的下层81a进行热处理。然后，通过溅射连续地形成阻挡金属的上层81b，Al合金82和盖金属83。由于与Al合金82接触的阻挡金属的上层81b不被氧化，所以可以防止通孔中的接触电阻的增加。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010251494A Method of manufacturing display device, and display device 审中-公开
标题翻译：制造显示装置的方法和显示装置
公开(公告)号：JP2010251494A
公开(公告)日：2010-11-04
申请号：JP2009098706
申请日：2009-04-15
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： OUE EIJI , GOTO JUN , ASAI TARO
IPC分类号： H01L21/336 , H01L21/20 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a display device that can be decreased in rate of remaining of amorphous silicon due to microcrystallization, and improved in production efficiency.
SOLUTION: The method of manufacturing the display device includes: a first semiconductor laminating step of forming a first semiconductor layer of amorphous silicon; a second semiconductor laminating process of forming a second semiconductor layer which comes into contact with the first semiconductor layer and to which an impurity is added; and a microcrystallization step of making at least part of the first semiconductor layer microcrystalline by heating the first semiconductor layer, the microcrystallization step being implemented after the second semiconductor layer laminating step.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种由于微晶化而可以降低非晶硅剩余率的显示装置，并且提高了生产效率。解决方案：制造显示装置的方法包括：形成非晶硅的第一半导体层的第一半导体层叠步骤; 形成与第一半导体层接触并添加有杂质的第二半导体层的第二半导体层叠工序; 以及微结晶步骤，通过加热所述第一半导体层来制造所述第一半导体层的至少一部分微晶，所述微晶化步骤在所述第二半导体层层压步骤之后实施。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2009204893A Liquid crystal display device, and method for manufacturing the same 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：JP2009204893A
公开(公告)日：2009-09-10
申请号：JP2008047247
申请日：2008-02-28
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： SONODA DAISUKE , OUE EIJI , ISHIGAKI TOSHIMASA , KIMURA TAIICHI
IPC分类号： G02F1/1343
摘要： PROBLEM TO BE SOLVED: To obtain a high-quality liquid crystal display device by improving reflection characteristics of the liquid crystal display device.
SOLUTION: The liquid crystal display device includes a first and second substrates 1 and 9, respectively, disposed opposing to each other interposing a liquid crystal layer 8, a pixel electrode 4 placed in the liquid crystal layer 8 side of the first substrate 1, a rugged reflecting film 6 placed under the pixel electrode 4, and a resin layer 5 having a rugged pattern on the upper face 55 placed under the rugged reflecting film 6, wherein the resin layer 5 is made of a chemically amplified resin material.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过改善液晶显示装置的反射特性来获得高质量的液晶显示装置。解决方案：液晶显示装置包括分别相对设置的插入液晶层8的第一和第二基板1和9，设置在第一基板的液晶层8侧的像素电极4 如图1所示，设置在像素电极4下方的凹凸反射膜6和位于凹凸反射膜6下方的上表面55上具有凹凸图案的树脂层5，其中树脂层5由化学放大树脂材料制成。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008153416A Display device and manufacturing method 审中-公开
标题翻译：显示设备和制造方法
公开(公告)号：JP2008153416A
公开(公告)日：2008-07-03
申请号：JP2006339462
申请日：2006-12-18
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAITO TAKUO , OUE EIJI
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L27/1222 , H01L27/1296 , H01L29/04 , H01L29/458 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a high quality image display by restricting failure and leakage failure of circuit operation resulting from hump in behavior of thin film transistor at a channel edge portion.
SOLUTION: An edge portion 302 of a polysilicon layer 301 that becomes a channel layer, becomes an amorphous region or a microcrystal region. Since silicon semiconductor film of channel edge portion 302 is in a microcrystal or an amorphous state, current is extremely small or is not caused to flow. In this way, there is almost no effect on behavior of the whole thin film transistor, even if threshold voltages Vth in channel center portion and in channel edge portion differ from each other, and thereby indication failure resulting from the hump can be avoided.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过限制由通道边缘部分处的薄膜晶体管的隆起引起的电路操作的故障和泄漏故障来提供高质量的图像显示。解决方案：成为沟道层的多晶硅层301的边缘部分302变成非晶区域或微晶区域。由于沟道边缘部分302的硅半导体膜处于微晶体或非晶态，所以电流非常小或不会流动。这样，即使通道中心部分和通道边缘部分中的阈值电压Vth彼此不同，也可以避免整个薄膜晶体管的行为的影响，从而可以避免由于隆起引起的指示故障。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008085053A Manufacturing method of display unit, and display unit 审中-公开
标题翻译：显示单元和显示单元的制造方法
公开(公告)号：JP2008085053A
公开(公告)日：2008-04-10
申请号：JP2006262884
申请日：2006-09-27
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： MIYAKE HIDEKAZU , ITOGA TOSHIHIKO , OUE EIJI , NODA TAKASHI
IPC分类号： H01L21/336 , H01L21/20 , H01L29/786
CPC分类号： H01L21/268 , H01L21/02532 , H01L21/02675 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L27/1285 , H01L29/04 , H01L29/0657 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： PROBLEM TO BE SOLVED: To improve characteristic of an SELAX-TFT and improve throughput of ELA crystallization.
SOLUTION: The film thickness of an amorphous semiconductor film before crystallization in formation of a thin film transistor using a pseudo-monocrystal semiconductor 113 and a thin film transistor using a granular polycrystalline semiconductor 112 on the same substrate 101 is made larger in the pseudo-monocrystal semiconductor portion 205 than in the polycrystalline semiconductor portion 206.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提高SELAX-TFT的特性，提高ELA结晶的产量。解决方案：在使用伪单晶半导体113形成薄膜晶体管的结晶之前的非晶半导体膜的膜厚度和在同一基板101上使用粒状多晶半导体112的薄膜晶体管的膜厚变得更大伪单晶半导体部分205比在多晶半导体部分206中更好。（C）2008，JPO＆INPIT

9. 发明专利

JP2007171464A Liquid crystal display and its manufacturing method 审中-公开
标题翻译：液晶显示及其制造方法
公开(公告)号：JP2007171464A
公开(公告)日：2007-07-05
申请号：JP2005367849
申请日：2005-12-21
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： KAMATA TAKAMITSU , OCHIAI TAKAHIRO , SASAKI TORU , OUE EIJI , KIMURA TAIICHI
IPC分类号： G02F1/1335 , G02F1/1337 , G02F1/1339 , G02F1/1343 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To reduce black brightness drop caused by the reflection on the slope of the reflection electrode in the boundary with the transparent electrode. SOLUTION: The pixel has a transparent area on a transparent electrode TPX to pass the incident light from the outside of a first insulation substrate SUB 1 to a second insulation substrate side, and a reflection area on a metal film reflection electrode RPX to reflect the incident light from the side of the second insulation substrate to the second insulation substrate side. The reflection electrode RPX is stacked partly overlapping the upper surface of the transparent electrode TPX, and fine irregularities RS are formed to scatter the visible light on the surface of the slope shown by an arrow A of this reflection electrode. Those fine irregularities RS drop the reflectivity. The transparent electrode TPX and the reflection electrode RPX are covered with an orientation layer ORI1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了减少由与透明电极的边界中的反射电极的斜面上的反射引起的黑色亮度下降。解决方案：像素在透明电极TPX上具有透明区域，以将入射光从第一绝缘基板SUB 1的外部传递到第二绝缘基板侧，并且将金属膜反射电极RPX上的反射区域传递到将入射光从第二绝缘基板的一侧反射到第二绝缘基板侧。反射电极RPX与透明电极TPX的上表面部分地重叠，并且形成细小的凹凸RS，以将可见光散射在由该反射电极的箭头A所示的斜面的表面上。这些细微的不规则性RS会降低反射率。透明电极TPX和反射电极RPX被取向层ORI1覆盖。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2010113151A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2010113151A
公开(公告)日：2010-05-20
申请号：JP2008285565
申请日：2008-11-06
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： OUE EIJI , GOTO JUN , MIYAZAWA TOSHIO , MATSUMOTO KATSUMI
IPC分类号： G02F1/1345 , G02F1/1368 , G09G3/20 , G09G3/30 , G09G3/36 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To stabilize characteristics of a PMOSTFT that constitutes a CMOSTFT in a display device having a drive circuit formed using the CMOSTFT in a periphery of a display region.
SOLUTION: An N-type channel region 8 and a P-type region 7b in a periphery in the channel width direction are formed in a PMOSTFT on the right side in a CMOSTFT. A first N-type region 12b is formed in contact with the P-type region 7b of the channel region in a source region 14 which is a P-type, and a second N-type region 11a having a larger impurity density than the first N-type region 12b is formed in contact with the first N-type region 12b. A current passing through the P-type region 7b in the periphery of the channel is controlled by a PN junction formed by the first and second N-type regions and the P-type source region 14 so as to stabilize the characteristics of the PMOSTFT.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在具有在显示区域的周围使用CMOSTFT形成的驱动电路的显示装置中，稳定构成CMOSTFT的PMOSTFT的特性。解决方案：在CMOSTFT中，在右侧的PMOSTFT中形成沟道宽度方向的周边的N型沟道区域8和P型区域7b。第一N型区域12b形成为与作为P型的源极区域14中的沟道区域的P型区域7b接触，并且具有比第一N型区域更高的杂质密度的第二N型区域11a N型区域12b形成为与第一N型区域12b接触。通过通道周围的P型区域7b的电流由由第一和第二N型区域和P型源极区域14形成的PN结控制，以稳定PMOSTFT的特性。版权所有（C）2010，JPO＆INPIT

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