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    • 6. 发明授权
    • Dielectric ceramic
    • 电介质陶瓷
    • US06852655B2
    • 2005-02-08
    • US10354074
    • 2003-01-30
    • Eiji KoderaKazuyuki FujiiMakoto BabaHidetoshi MizutaniManabu Sato
    • Eiji KoderaKazuyuki FujiiMakoto BabaHidetoshi MizutaniManabu Sato
    • C03C8/04C03C8/14H05K1/03C03C1/00
    • C03C8/14C03C8/04H05K1/0306
    • The invention is to offer such a dielectric ceramic enabling to simultaneously sinter with the low resistant conductor of Ag based metals and Cu based metals, having the excellent mechanical strength and exhibiting the excellent dielectric characteristics in the GHz zone. Mixed powders of Si: 20 to 30 weight %, B: 5 to 30 weight %, Al: 20 to 30 weight %, Ca: 10 to 20 weight %, and Zn: 10 to 20 weight % are prepared, melted, and rapidly cooled to produce glass frits. The glass frits are granulated and mixed with gahnite filler and titania filler which are inorganic filler powders. Subsequently, a binder is thrown into the powders to produce a composition of dielectric ceramic, and then is formed, followed by sintering. The mixed powders may contain at least one kind of alkali metal of Li, K and Na.
    • 本发明提供一种这样的电介质陶瓷,能够与Ag基金属和Cu基金属的低电阻导体同时烧结,具有优异的机械强度并且在GHz区域表现出优异的介电特性。 混合粉末Si:20〜30重量%,B:5〜30重量%,Al:20〜30重量%,Ca:10〜20重量%,Zn:10〜20重量% 冷却生产玻璃料。 将玻璃料与粒状填料和作为无机填料粉末的二氧化钛填料混合。 随后,将粘合剂投入到粉末中以产生电介质陶瓷的组合物,然后形成,随后烧结。 混合粉末可含有至少一种Li,K和Na的碱金属。
    • 10. 发明授权
    • Plasma processing method
    • 等离子体处理方法
    • US08404595B2
    • 2013-03-26
    • US11860788
    • 2007-09-25
    • Masanobu HondaManabu SatoYoshiki Igarashi
    • Masanobu HondaManabu SatoYoshiki Igarashi
    • H01L23/302H01L21/461B23P15/00C03C25/00C03C15/00C03C25/68C23F1/00C23F3/00B44C1/22
    • H01L21/467H01J37/32091H01J37/32165H01L21/31116
    • A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.
    • 用于处理目标基板的等离子体处理方法使用等离子体处理装置,该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器,设置在处理容器中的第一电极,并连接到用于等离子体产生的第一RF电源, 设置成面对第一电极的电极。 该方法包括在处理容器中激发含有碳氟化合物的处理气体,以产生等离子体,同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二 电极。 通过等离子体蚀刻目标层,由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。