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    • 1. 发明申请
    • ACTIVE INTERCONNECTS AND CONTROL POINTS IN INTEGRATED CIRCUITS
    • 集成电路中的主动互连和控制点
    • WO2006115968A2
    • 2006-11-02
    • PCT/US2006/014856
    • 2006-04-19
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.WILLIAMS, R., StanleyKUEKES, Phillip, J.PERNER, Frederick, A.SNIDER, Gregory, S.STEWART, Duncan
    • WILLIAMS, R., StanleyKUEKES, Phillip, J.PERNER, Frederick, A.SNIDER, Gregory, S.STEWART, Duncan
    • H01L21/66
    • H05K7/1092H01L23/5228H01L2924/0002H01L2924/00
    • In various embodiments of the present invention, tunable resistors (1102) are introduced at the interconnect layer of the integrated circuits (102) in order to provide a means for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronics characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors (1102) included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains. In some cases, components and modules may be turned off, while, in other cases, components and modules may be turned on.
    • 在本发明的各种实施例中,可调谐电阻器(1102)被引入集成电路(102)的互连层,以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或 配置后续制造的集成电路。 例如,当诸如晶体管的某些内部部件由于制造缺陷而没有指定的电子特性时,根据本发明的实施例调整包括在集成电路的互连层中的可调电阻器(1102)的可变电阻 可以用于调整内部电压和/或电平,以改善有缺陷的部件。 在其他情况下,可调谐电阻器可以用作开关来配置集成电路组件,包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。 在某些情况下,可能会关闭组件和模块,而在其他情况下,可能会打开组件和模块。
    • 2. 发明申请
    • NANOSCALE INTERCONNECTION INTERFACE
    • 纳米互连接口
    • WO2006116534A2
    • 2006-11-02
    • PCT/US2006/015882
    • 2006-04-26
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.KUEKES, Phillip, J.ROBINETT, Warren, J.SEROUSSI, GadielWILLIAMS, R., Stanley
    • KUEKES, Phillip, J.ROBINETT, Warren, J.SEROUSSI, GadielWILLIAMS, R., Stanley
    • G06F11/10G11C8/10G11C8/20G11C13/00
    • G11C13/0023B82Y10/00G06F11/1016G11C8/10G11C11/54G11C13/0002G11C2213/77G11C2213/81
    • One embodiment of the present invention provides a demultiplexer implemented as a nonowire crossbar (3000) or a hybrid nanowire/microscale-signal-line crossbar with resistor-like nanowire junctions. The demultiplexer of one embodiment provides demultiplexing of signals input on k microscale address lines (3003, 3004) to 2 k or fewer nanowires (3006-3009), employing supplemental, internal address lines (3010, 3012) to map 2 k nanowire addresses to a larger, internal, n -bit address space, where n > k . A second demultiplexer embodiment of the present invention provides demultiplexing of signals input on n microscale address lines to 2 k nanowires, with n > k , using 2 k , well-distributed, n -bit external addresses to access the 2 k nanowires. Additional embodiments of the present invention include a method for evaluating different mappings of nanowire address to internal address-spaces of different sizes, or to evaluate mappings of nanowires to external address-spaces of different sizes, metrics for evaluating address mapping and demultiplexer designs, and demultiplexer design methods.
    • 本发明的一个实施例提供了实现为非线性横杆(3000)或具有电阻器状纳米线结的混合纳米线/微型信号线交叉开关的解复用器。 一个实施例的解复用器将使用补充的内部地址线(3010,3012)的k个微米地址线(3003,3004)上输入的信号解复用到更少的纳米线(3006-3009) 将2nm的纳米线地址映射到更大的内部n位地址空间,其中n> k。 本发明的第二解复用器实施例提供了在n个微米级地址线上输入的信号到n≥k的二极管,使用2分布良好的分布, n位外部地址以访问2nm的纳米线。 本发明的另外的实施例包括用于评估纳米线地址与不同大小的内部地址空间的不同映射的方法,或者评估纳米线与不同大小的外部地址空间的映射,用于评估地址映射和解复用器设计的度量,以及 解复用器设计方法。