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1. 发明专利

JPH11233755A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11233755A
公开(公告)日：1999-08-27
申请号：JP2950598
申请日：1998-02-12
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： TAKAYANAGI YUJI , MATSUURA NOBUYOSHI , NEMOTO TOYOICHI , TAKAHASHI KAZUYUKI
IPC分类号： H01L29/744 , H01L29/74
摘要： PROBLEM TO BE SOLVED: To provide a thin semiconductor device by forming the gate electrode of a GTO (gate turn-off thyristor) in a multiple structure. SOLUTION: In a GTO, a multiple electrode 108 consisting of a four-layer metal of an aluminum layer 101, a titanium layer 102, a nickel layer 103, and a metal layer 104 is formed at a part where a P base layer 202 is exposed to a semiconductor substrate surface, and a gate lead 13 is connected to the surface of the multiple electrode 108 via solder 105. As a result, by directly gluing a gate pad, the need for a conventional gate pressurization mechanism is eliminated, thus making thin the GTO element.

2. 发明专利

JP2000068231A METHOD FOR FORMING ELECTRODE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000068231A
公开(公告)日：2000-03-03
申请号：JP23809698
申请日：1998-08-25
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SHIODA MASASHI , HORIUCHI JUNICHIRO , TAKAHASHI KAZUYUKI , MORI MUTSUHIRO , MATSUZAKI MITSUSACHI
IPC分类号： H01L21/28 , H01L29/47 , H01L29/861 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To apply an organic protective film as a spacer by forming a thickness of the film plural times or more as large as that of a second metal layer. SOLUTION: The method for forming an electrode of a semiconductor device comprises the steps of selectively removing silicon oxide films 10a, 11, exposing a surface of an N type lightly doped layer 2 and a surface of a P type heavily doped layer 4, depositing a layer containing aluminum as a main component, selectively removing the aluminum layer, and forming an aluminum electrode 101. The method further comprises the steps of coating surfaces of the electrode 101 and the film 11 with a gel-like polyimide by a spin coating method, heat- treating it to form a polyimide film of 23,000 Å, continuously twice repeating the polyimide coating and the heat-treating steps to form a polyimide film 13 of 46,000 Å, then heat-treating it, and forming a photoresist film 12 on the film 13. The method further comprises the steps of then opening a window at the film 12 by a photolithography process, then removing the film 13 by isotropically etching, and exposing the surface of the electrode 101.

3. 发明专利

JPS63115372A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63115372A
公开(公告)日：1988-05-19
申请号：JP26069086
申请日：1986-11-04
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OKUBO TOSHIO , TAKAHASHI KAZUYUKI , KANEKO KAZUO
IPC分类号： H01L29/872 , H01L29/47
摘要： PURPOSE:To prevent the breakdown of an interlayer insulation film due to hillocks and to improve reliability by a method wherein at least the part serving as the Schottky barrier electrode is constructed in two layers - the first layer made of viewer Al and the second layer made of Si-doped Al. CONSTITUTION:A lightly-doped N type Si substrate 1 is prepared. First, a ther mal oxide film (SiO2)2 generated over the surface is partly windowed by photoresist technique, and a viewer Al film 3 is formed thereon by evaporation (or sputtering). Next, a 2-3% Si-doped Al film 4 is formed over the whole surface and then etched in succession to produce wiring patterns. A plasma SiN film 6 is deposited as the underlayer film of an interlayer insulation film. Thereafter, the work undergoes contact alloying in dry O2 to form a Schottky barrier 7 between the viewer Al and the Si substrate. This process prevents the generation of voids of Al wirings and of hillocks and ensures the improve ment of the initial yield and the reliability. Since the underlayer Al is viewer Al, Schottky characteristics can be secured.

4. 发明专利

JPH0867995A PLASMA ETCHING DEVICE 失效
公开(公告)号：JPH0867995A
公开(公告)日：1996-03-12
申请号：JP20329994
申请日：1994-08-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： TAKAHASHI KAZUYUKI , HAYASHI SHOJI , SHINNO YUJI , SAKANIWA HIROTAKA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To increase the number of produced nondefective semiconductor devices and to improve reliability by uniformizing the etching rate in the etching surface of a material to be etched. CONSTITUTION: A material 12 to be etched is placed on a lower electrode (stage) 11, a chamber 1 is evacuated from an exhaust port 5 to a specified vacuum, and a reacting gas variable with the kind of the material 12 is introduced from an inlet 6. A high-frequency electric field is impressed on an upper electrode 10, the upper electrode 10 or the lower electrode is rotated at a specified speed, and the material 12 is etched in a plasma state.

5. 发明专利

JPS6352476A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6352476A
公开(公告)日：1988-03-05
申请号：JP19545086
申请日：1986-08-22
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YOKOYAMA HIROSHI , TAKAHASHI KAZUYUKI
IPC分类号： H01L21/318 , H01L21/336 , H01L29/78
摘要： PURPOSE:To prevent a bad state of contact resistance by a method wherein a semiconductor nitride film which is formed at a comparatively low temperature is provided between a metal electrode and a protective insulating film. CONSTITUTION:After a metal electrode 3 has been formed, an SiN film 9 with a thickness of 1000-2000 Angstrom is formed by a reaction by making use of plasma discharge and used as a passivation film. This SiN film 9 is formed at about 260 deg.C. An SOG (spin on glass) coating 5 is formed such that it is about 1000Angstrom thick above a gate electrode and also buries steps at the sides of the gate electrode, and the coating is then baked. Because the SiN film 9 formed at a low temperature exists, it is possible to prevent that the surface of the metal electrode 3 is oxidized during a subsequent heat-treatment process and that the contact resistance in relation other wiring parts connected with the surface is increased.

6. 发明专利

JP2001044414A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001044414A
公开(公告)日：2001-02-16
申请号：JP22140099
申请日：1999-08-04
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： TAKAYANAGI YUJI , ONARI JUNICHI , SAKURABA KOJI , TAKAHASHI KAZUYUKI , SHINNO YUJI
IPC分类号： H01L29/06 , H01L21/28 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To form a gate structure suitable for a pressure contact semiconductor device with less proportion of termination region to a chip area by constituting at least a second electrode of a barrier metal layer. SOLUTION: A p-n-p type transistor is constituted of a p-type emitter layer 11, a n-type semiconductor substrate 1, and a p-type collector layer 21, and an insulating gate transistor which controls the p-n-p type transistor is constituted of a gate electrode 13, a n-type layer 12, the p-type emitter layer 11, and the n-type semiconductor substrate 1. A barrier metal layer 43 is in ohmic contact with a guard ring 41 via contact hole 201, and the barrier metal layer 43 expands a depletion layer formed on the n-type semiconductor substrate with a field oxide film 42 in-between, and thereby relaxes the electric field concentration. Therefore, a semiconductor device of gate structure, which is less in proportion of the termination region to a chip area and is suitable for cold-welded semiconductor devices, can be obtained.

7. 发明专利

JP2000228402A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000228402A
公开(公告)日：2000-08-15
申请号：JP2811399
申请日：1999-02-05
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SAKURABA KOJI , TAKAYANAGI YUJI , NEMOTO TOYOICHI , TAKAHASHI KAZUYUKI
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L21/60 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To improve the processability of a surface electrode film by photoetching after an electrode has been formed by composing the surface electrode film on a silicon substrate of a metallic film wherein three layers which are a molybdenum silicide film, an aluminum silicon film and an aluminum film are deposited, and by setting the thickness of the aluminum silicon film to a predetermined value. SOLUTION: A surface electrode film 1, which is prepared by forming a molybdenum silicide film 101 as a first layer to a thickness of 0.1 μm, an aluminum silicon film 102 as a second layer to thicknesses varying from 0.01 to 0.5 μm, and an aluminum layer 103 as a third layer to a thickness of 0.6 μm, is heat-treated at 450 deg.C. According to the result of an experiment, the depth of a mutual diffusion layer can be set to 10 nm or less if the thickness of the film 102 is 0.05 μm or more, thereby allowing the mutual diffusion layer and the film 101 to be removed by etching using a CF4+O2 gas. As a result, the processability of the surface electrode film by photoetching can be improved.

8. 发明专利

JPS6337636A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6337636A
公开(公告)日：1988-02-18
申请号：JP17995786
申请日：1986-08-01
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OKUBO TOSHIO , FUKUYAMA RYOICHI , NIWA KEIICHI , TAKAHASHI KAZUYUKI
IPC分类号： H01L21/768
摘要： PURPOSE:To reduce the contact resistance of a connecting section between Mo and Al, and to obtain an MOSFET having excellent high-frequency characteristics by preventing the interposition of an oxide between a section consisting of a high melting-point metal and a section connected to the section consisting of the high melting-point metal and composed of a wiring metal. CONSTITUTION:An Mo electrode 5 is formed onto the surface of a semiconductor base body, and a semiconductor element is shaped into the base body by using the Mo electrode 5. An oxide film 10 coating the upper section of the semiconductor element is bored to expose one part of the Mo electrode 5, and the exposed surface of the electrode 5 is dry-etched. Consequently, an oxide on an Mo surface is removed, and Al is evaporated onto the Mo surface under the state, thus shaping a wiring Al electrode 9. Accordingly, the Mo oxide on the Mo surface is taken away completely, thus reducing contact resistance in a connecting section between Mo and Al.

9. 发明专利

JPH02120151A CAR MOUNTING SUPPORT BLOCK 失效
公开(公告)号：JPH02120151A
公开(公告)日：1990-05-08
申请号：JP27067288
申请日：1988-10-28
申请人： HITACHI LTD , HITACHI AUTOMOTIVE ENG
发明人： ITO CHITSU , YAMAGUCHI KENICHI , TANITSU KOICHI , TAKANO KOICHI , TAKAHASHI KAZUYUKI
IPC分类号： B60R7/06 , B60R11/00 , B60R11/02 , F16B2/12 , H04N5/64
摘要： PURPOSE:To perform the support of a car mount such as a television set or the like so simply and positively and that free of turning by inserting a U-shaped bracket in an upper side of a cover in a glove box, and connecting a holddown member or the like provided with a ball, to this bracket. CONSTITUTION:A mount 1 such as television set is attached to a cover 2 of a glove box. In brief, an opening of a section U-shaped bracket 4 is inset in an upper side of this cover 2, while a screw 6 is clamped and an interval between a presser plate 7 and a back part 4b of the bracket 4 is pinched at the upper side of the cover 2. On the other hand, a thread part 8b of a holddown member 8 is screwed in a thread part 5b of a hearer 5 fixed to a front part of the bracket 4, while a ball 9 is inset in a surface part 8a of the holddown member 8 by energizing it with a belleville spring 10. Then, a mounting block 11 of the mount 1 is attached to the other end of a shaft part 9a fitted with the ball 9 at one end. With this constitution, the mount 1 is supported in a car room simply and positively and free of turning.

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