专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

IN154492B SLURRY DRIP-FEEDING APPARATUS 未知
公开(公告)号：IN154492B
公开(公告)日：1984-11-03
申请号：IN468CA1982
申请日：1982-04-27
申请人： HITACHI LTD
发明人： KAMOSHIDA TOMATSU , ITSUMI FUMIHIKO , UCHIDA YASUAKI
IPC分类号： H01L7/68

2. 发明专利

JPS6153289B2 失效
公开(公告)号：JPS6153289B2
公开(公告)日：1986-11-17
申请号：JP15445379
申请日：1979-11-30
申请人： HITACHI LTD
发明人： UCHIDA YASUAKI , NADAMURA AKIO
IPC分类号： B65G59/06 , B65G47/78

3. 发明专利

JPS5818299B2 失效
公开(公告)号：JPS5818299B2
公开(公告)日：1983-04-12
申请号：JP13581278
申请日：1978-11-06
申请人： HITACHI LTD
发明人： TADANO TAKU , UCHIDA YASUAKI
IPC分类号： B65G11/02 , B65G47/14 , B65G47/78

4. 发明专利

JPH0630400B2 失效
公开(公告)号：JPH0630400B2
公开(公告)日：1994-04-20
申请号：JP18104287
申请日：1987-07-22
申请人： HITACHI LTD
发明人： SUZUKI SATORU , MATSUKUMA KUNIHIRO , KOKUCHI SHIGERU , UCHIDA YASUAKI , MORITA KEIICHI
IPC分类号： H01L31/04

5. 发明专利

JPH0478029B2 失效
公开(公告)号：JPH0478029B2
公开(公告)日：1992-12-10
申请号：JP11820183
申请日：1983-07-01
申请人： HITACHI LTD
发明人： SAEGUSA HIROYUKI , MATSUKUMA KUNIHIRO , UCHIDA YASUAKI , SUDA KOICHI , KUSHIMA TADAO
IPC分类号： H01L31/042 , H01L31/02 , H01L31/04

6. 发明专利

JPS60239067A SOLAR CELL ELEMENT 失效
公开(公告)号：JPS60239067A
公开(公告)日：1985-11-27
申请号：JP9286184
申请日：1984-05-11
申请人： HITACHI LTD
发明人： SUDA KOUICHI , OOGANE KUNISUKE , MATSUKUMA KUNIHIRO , KOKUUCHI SHIGERU , UCHIDA YASUAKI
IPC分类号： H01L31/042 , H01L31/04 , H01L31/05
摘要： PURPOSE:To obtain a solar cell having excellent adhesive strength with leads and small shadow-loss of beams by forming a pattern with its width smaller than lead wires between divided bus bar electrodes. CONSTITUTION:An N layer 13 is formed on a light-receiving surface 11 in a P type Si substrate 1, and a TiO2 antireflection film 4 and collectors 2 are superposed. A P layer 14 and an electrode 3 are superposed on the back 12. Second pad electrodes 72, which are positioned among first pad sections 71 and pads 71 connected to the electrodes 2 and are smaller than the first pad sections 71, are formed to sections to which internal connecting leads for connecting solar cell elements in series are connected. Since bus bar electrodes are divided into a large number of pad sections 71, 72 in the structure, solder has excellent wettability and uniformity and also has a large adhesion area, thus resulting in large adhesive strength and high reliability on a temperature cycle. Since the pad sections have width smaller than the width of connecting leads, the shadow- loss of beams is reduced, and a device having high efficiency and high reliability is obtained.

7. 发明专利

JPS6012778A STRUCTURE FOR ELEMENT CONNECTION OF SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6012778A
公开(公告)日：1985-01-23
申请号：JP11820183
申请日：1983-07-01
申请人： HITACHI LTD
发明人： SAEGUSA HIROYUKI , MATSUKUMA KUNIHIRO , UCHIDA YASUAKI , SUDA KOUICHI , KUSHIMA TADAO
IPC分类号： H01L31/042 , H01L31/02 , H01L31/04
摘要： PURPOSE:To eliminate the damage of batteries by avoiding photo irradiation to the surface of a battery surface exposed between individual electrodes by a method wherein slits are bored in the peripheral edges of a conductor lead in the longitudinal direction, into which the ends of the individual electrodes are inserted, and then being irradiated with a laser beam reduced in the diameter to that of the lead, in soldering the conductor leads to the pairs of electrodes arranged at fixed intervals on the photo receiving surface and the back surface of the solar battery. CONSTITUTION:The pairs of electrode patterns 2 arranged at intervals are formed on the photo receiving surface and the back surface of the solar battery 1. The conductor lead 50 positioned between the pattern pairs is soldered to this pattern 2; at this time, the following process is taken. That is, the slits 51 corresponding to the individual electrodes and slit-free parts 52 are provided alternately at both edges of the slender lead 50, and then the ends of the electrodes are inserted into the slender lead 50, and then the ends of the electrodes are inserted into the slits 51. Thereafter, individual solders provided on the back surface of the lead 50 is irradiated with laser beams having a focusing diameter 12 not going out of the width of the lead 50, resulting in the connection of the pattern 2 to the lead 50.

8. 发明专利

JPS5566415A MECHANISM FOR SEPARATING AND SUPPLYING PARTS 失效
公开(公告)号：JPS5566415A
公开(公告)日：1980-05-19
申请号：JP13581278
申请日：1978-11-06
申请人： HITACHI LTD
发明人： TADANO TAKU , UCHIDA YASUAKI
IPC分类号： B65G11/02 , B65G47/14 , B65G47/78
摘要： PURPOSE:To effect separation and supplying of parts in high speed and in stable by providing below the parts group with a plurality of parts retaining mechanisms at a distance wherein the respective parts are not being contacted each other and dropping respective parts sequentially by opening and colsing said mechanisms. CONSTITUTION:At first, a plurality of parts 4 are supported in one row by guide plates 6-9, and are retained by a shutter 10. Then, when the shutter 10 is moved toward the 14, the parts group is dropped to a position of a shutter 11, subsequently, when the shutter 10 is moved toward the left 15, one parts 41 is held between both of the shutters 10, 11. Succeedingly, the shutter 11 is moved toward the right 16, the parts 41 is dopped on a separator 12. When the shutter 11 is mobed toward the left 17 and the shutter 10, cooperating with the separator 12, is moved toward the right 14, said parts 41 is dropped onto a separator 13. Thereafter, the shutter 11, cooperating with the separator 13, is moved toward the right 16, the parts 41 is dropped onto a portion to be supplied with the parts.

9. 发明专利

JPH05299672A 失效
公开(公告)号：JPH05299672A
公开(公告)日：1993-11-12
申请号：JP9660292
申请日：1992-04-16
申请人： HITACHI LTD
发明人： MATSUKUMA KUNIHIRO , KOKUUCHI SHIGERU , KIDA YASUHIRO , YAGI HIDEYUKI , KOMATA YASUSHI , UCHIDA YASUAKI , HATSUMI KIMIO , ASAHI TADAO
IPC分类号： H01L31/04
摘要： PURPOSE:To acquire high photoelectric conversion efficiency and to improve efficiency and economy of a solar battery element by performing junction and isolation of an n -layer and a p-layer by using a screen print technique and alkali etching. CONSTITUTION:A paste which is farmed by mixing small aluminum grain in a silver paste which becomes one electrode and a paste which is formed by mixing small gold antimony grain in silver paste which becomes the other electrode are printed on an n -layer 13 forming a p-n junction on a main surface 11 of a p-type silicon substrate. After burning and alloy reaction of it, an n - layer forming a p-n junction on a main surface of the p-type silicon substrate 11 is removed by alkali etching and silicon is removed. Thereby, junction and isolation of a pair of main electrodes and a pair of an n -layer and a p -layer connected thereto can be performed. Photoelectric conversion efficiency can be improved and a manufacturing cost can be reduced in this way.

10. 发明专利

JPH0575149A MANUFACTURE OF SOLAR CELL DEVICE 失效
公开(公告)号：JPH0575149A
公开(公告)日：1993-03-26
申请号：JP23167491
申请日：1991-09-11
申请人： HITACHI LTD
发明人： KIDA YASUHIRO , MATSUKUMA KUNIHIRO , KOKUUCHI SHIGERU , UCHIDA YASUAKI , HATSUMI KIMIO , ASAHI TADAO , YAGI HIDEYUKI
IPC分类号： H01L31/04
摘要： PURPOSE:To enhance photo-conversion efficiency by placing an n-type or p-type conducting layer substrate into contact with electrodes formed on the surface of the substrate on the counter light received side by way of a point-shaped pn junction. CONSTITUTION:The top 121 and the bottom 122 of a main surface (MS) 12 are made in an interdigital shape. An MS 11 on the light received side and the bottom of the MS 12 comprise a very small projected and recessed texture where oxide films 2 and 3 are formed on the surface of the texture. A TiO2 reflection preventative film 4 is formed on the oxide film 2. An interdigital rear part of the top 121 of the MS 12 is in contact with a third layer 16 having n-type high impurity concentration by way of an aluminum silicon alloy layer (AS) 15 and a p-type conductive first layer 13 at the pn junction where a first electrode 15, which is insulated from the third layer 16, is formed on the oxide film 3. A second electrode 6, which comes into contact with an n-type conductive second layer 14 and insulated from the second layer 14 on the oxide film 3, is formed on the bottom of the MS 12 by way of the AS 15 and the first layer 13. Therefore, the pn junction between the first layer 13 and the second layer 14 minimizes voltage drop.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式