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1. 发明专利

JPS6015926A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPS6015926A
公开(公告)日：1985-01-26
申请号：JP12327683
申请日：1983-07-08
申请人： HITACHI OME ELECTRONIC CO , HITACHI LTD
发明人： NANKOU SUSUMU , KAJIWARA HISASHI , MAEJIMA HIROSHI , NAGATOMO HIROTO
IPC分类号： H01L21/30 , G03F7/30 , H01L21/027 , G03F7/00
摘要： PURPOSE:To enable automatically continuous development treatment of the sample, and to enable to enhance working efficiency and to enhance the development treatment effect of a semiconductor manufacturing device by a method wherein a developing part is constructed of a developing tank and a transferring means, a developer held at a regulated temperature is supplied to the developing tank, and a developer deterioration detecting part is annexed. CONSTITUTION:A wafer 1 completed with exposure is transferred into a housing 3 according to a loader belt 2, and transferred on the wafer holder 10 of a developing part 6 according to a belt 13. The wafer holder 10 moves downward to immerse the wafer 1 in a developer in a developing tank 9. When the prescribed hours elapsed, a pusher operates to transfer the wafer 1 to the right side, and the wafer is transferred on a wafer holder 11 from the wafer holder 10. The wafer holder 11 moves upward to carry up the wafer 1 over the developing tank 9. During development thereof, the inside of the tank 9 is held at a fixed liquid quantity according to a treatment liquid flow rate automatic control system 18, and moreover held at a fixed liquid temperature according to a liquid temperature regulator 21. Moreover, the deteriorated condition is monitored according to a liquid temperature regulator 21. Moreover, the deteriorated condition is monitored according to a deterioration detecting part 26. Moreover, the inside of the housing 3 is held in a nitrogen gas atmosphere.

2. 发明专利

JPS5923517A Resist removing method and apparatus therefor 失效
标题翻译：电阻去除方法及其装置
公开(公告)号：JPS5923517A
公开(公告)日：1984-02-07
申请号：JP13197182
申请日：1982-07-30
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： TAKAGAKI TETSUYA , MAEJIMA HIROSHI , NAGATOMO HIROTO , NANKOU SUSUMU
IPC分类号： H01L21/027 , G03F7/16 , H01L21/30
CPC分类号： G03F7/162
摘要： PURPOSE:To get rid of generation of foreign substance by a resist layer and defect in appearance, by a method wherein when a resist is applied onto a semiconductor wafer using a spinner, unrequired resist adhered at peripheral part of a wafer is removed using a solvent. CONSTITUTION:A semiconductor wafer 3 to be coated with a resist film 7 is put onto a rotating spinner 14, and an upper cap 11 having a nozzle 15 is disposed on the semiconductor wafer 3. The spinner 14 is elevated and brought close to the nozzle 15 and the resist 7 spouted from the nozzle is applied onto the wafer 3 rotating at high speed and the residual resist 7 is discharged out of an outlet port 17. Since the swollen resist 7 is adhered to surrounding part of the wafer 3, the resist 7 is removed in following manner. The spinner 14 is moved downwards and rotated at low speed and contacted with air flowing between an inlet port 16 and an outlet port 18, and a resist solvent 20 in an inner vessel 19a surrounding the spinner 14 is contacted with the resist 7 at peripheral part and solved. And then the waste liquid is fallen into an outer vessel 19b.
摘要翻译：目的：为了通过抗蚀剂层除去异物的产生和外观缺陷，通过以下方法，其中当使用旋转器将抗蚀剂施加到半导体晶片上时，使用溶剂除去粘附在晶片的周边部分的不需要的抗蚀剂。构成：将要涂覆有抗蚀剂膜7的半导体晶片3放置在旋转的旋转器14上，并且具有喷嘴15的上盖11设置在半导体晶片3上。旋转器14升高并靠近喷嘴 15并且从喷嘴喷出的抗蚀剂7被施加到高速旋转的晶片3上，并且残余抗蚀剂7从出口17排出。由于溶胶抗蚀剂7粘附到晶片3的周围部分，所以抗蚀剂 7以下列方式移除。旋转器14向下移动并以低速旋转并与在入口端口16和出口端口18之间流动的空气接触，并且围绕旋转器14的内部容器19a中的抗蚀剂溶剂20与边缘部分处的抗蚀剂7接触解决了。然后将废液倒入外容器19b中。

3. 发明专利

JPS5478079A WAFER WASHING AND DRYING UNIT 失效
公开(公告)号：JPS5478079A
公开(公告)日：1979-06-21
申请号：JP14497077
申请日：1977-12-05
申请人： HITACHI LTD
发明人： NANKOU SUSUMU , NONAKA TOSHIO , MURAMATSU KIMIO
IPC分类号： F26B5/08 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/68
摘要： PURPOSE:To make this unit suitable for automatization by forming a semiconductor wafer exchanging hole having a door, which can be opened and closed, in a top plate and providing a storage part vertical moving unit, a rotary table and a fixed position stopping unit near the wafer storage part and operating them synchronously. CONSTITUTION:After the completion of wafer washing and drying, rotary mechanism 48 is stopped to rotate rotary table 5, where storage parts 16a and 16b of wafer 25 are put, by inertia. Next, when the number of rotations is lowered to five rottions/minute, driving mechanism 69 is operated by photoelectronic switches 57 and 58 which constituted a rotation detection mechanism, and pusher protrusion part 62 is linked with cut part 60 of positioning disc 59, thereby stopping table 5. After that, a door opening and closing mechanism and a storage part vertical moving unit are driven by limit switch 66 which is near pusher 61, and doors 13a and 13b are opened. Next, a robot is used to exchange cartridge 24 in storage parts 16a and 16b, and driving mechanism 69 of the fixed position stopping mechanism is reset to wash and dry another wafer again.

4. 发明专利

JPS5461476A DISCHARGER FOR VISCOUS FLUID 失效
公开(公告)号：JPS5461476A
公开(公告)日：1979-05-17
申请号：JP12752077
申请日：1977-10-26
申请人： HITACHI LTD
发明人： MAEJIMA HIROSHI , NANKOU SUSUMU , NASHIHARA HIROSHI
IPC分类号： H01L21/306 , H01L21/027 , H01L21/314
摘要： PURPOSE:To perform fluid stop completely and stably, by individually the feeding and absorbing set for viscous fluid and by alternately perfoming the feeding and absorbing operaton of viscous fluid. CONSTITUTION:The fluid photo resist 2 in the vessel 1 is introduced to the flow inlet 32 with the electromagnetic valve 22 opened, and the liquid photo resist pushes down the ball 26 with the electromagnetic valve 23 opened and is filled in the chamber F and the nozzle 6 and further is discharged on the semiconductor wafer 9. Next, the feeding operaton of liquid photo resist is stopped with the electromagnetic valve 22 closed, the bellows 17 and 18 are expanded with the electromagnetic valve 23 colsed, and the volume of the chamber F1 is expnded and the photo resist in the nozzle 6 is returned and liquid stop is performed.

5. 发明专利

JPS59208831A Applicator 失效
标题翻译： APPLICATOR
公开(公告)号：JPS59208831A
公开(公告)日：1984-11-27
申请号：JP8275183
申请日：1983-05-13
申请人： Hitachi Ltd , Hitachi Tokyo Electronics Co Ltd
发明人： NANKOU SUSUMU , MIYAMOTO KOUICHI , NAGATOMO HIROTO , MAEJIMA HIROSHI
IPC分类号： B05C11/08 , H01L21/027 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To prevent the flash-back of an application material and the inequality of film thickness by stably controlling a displacement from a treating vessel optimally. CONSTITUTION:A semiconductor wafer 3 is rotatably held simultaneously to the upper surface of a spinner 2 mounted so as to be able to turn at desired speed up to high speed from low speed by a motor. A ring 6 for preventing the flash- back of a resist is placed between the lower cup section 1a and upper cup section 1b of a treating vessel 1. When the resist is dropped to the central section of the wafer 3 from a nozzle 5, a resist film is formed by the revolution of the wafer 3, but an exhaust is started through a discharge pipe 7, an exhaust pipe 10, etc. at the same time. The angle of rotation of a flap plate 12 in a displacement detector 11 is detected simultaneously as output resistance R by a potentiometer 14, the correlation of the value and a displacement is arithmetically treated by a CPU15, the opening of a needle valve 18 is controlled by the CPU15, and the quantity of air fed to an exhaust generator 16 is controlled. Accordingly, the displacement from the treating vessel 1 is controlled to optimum quantity at all times.
摘要翻译：目的：通过稳定地控制处理容器的位移，最佳地防止应用材料的闪回和膜厚不均等。构成：半导体晶片3可旋转地保持在旋转器2的上表面上，该旋转器2安装成能够以低速通过电动机以所需速度转速高速转动。在处理容器1的下杯部分1a和上杯部分1b之间放置用于防止抗蚀剂闪回的环6.当抗蚀剂从喷嘴5落到晶片3的中心部分时，通过晶片3的旋转形成抗蚀剂膜，但同时通过排出管7，排气管10等开始排气。位移检测器11中的挡板12的旋转角度通过电位计14被同时检测为输出电阻R，该值与位移的相关性由CPU15算术处理，针阀18的打开被控制并且控制供给到排气发生器16的空气量。因此，从处理容器1的位移始终被控制到最佳量。

6. 发明专利

JPS5988822A SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JPS5988822A
公开(公告)日：1984-05-22
申请号：JP19759682
申请日：1982-11-12
申请人： HITACHI OME ELECTRONIC CO , HITACHI LTD
发明人： NANKOU SUSUMU , KAJIWARA HISASHI , NAGATOMO HIROTO , MAEJIMA HIROSHI , NAKAZAWA TOMIO , KADOTA KAZUYA
IPC分类号： H01L21/30 , G03F7/30 , H01L21/027
摘要： PURPOSE:To realize continuous processings for an object to be processed and thereby attain improvement in processing capability by continuously providing a development section, washing section and a drying section and by providing a liquid temperature control section which holds the temperature of developer to a constant temperature. CONSTITUTION:A wafer 1 is pushed out of a loader 3 and is moved to a developing tank 8 by a conveyer. Upon completion of development for the specified period within the developing tank 8, the conveyer operates conveying the wafer 1 to the washing tank 12. Thereby the wafer 1 is immersed in the pure water in the tank 12. When preliminary washing has completed in the tank 12, the wafer 1 is transferred to a holding frame 21 on the spinner 20 by the conveyer. The final washing is carried out and spin-drying is carried out. After the spin- drying, the wafer 1 is housed in a magazine 26 within an unloader 25. Meanwhile, the developer is controlled to the prescribed temperature by the liquid temperature controller 27 at the developing section 5.

7. 发明专利

JPS5371340A DIELECTIRC HEATER 失效
公开(公告)号：JPS5371340A
公开(公告)日：1978-06-24
申请号：JP14649776
申请日：1976-12-08
申请人： HITACHI LTD
发明人： MAEJIMA HIROSHI , NANKOU SUSUMU
IPC分类号： H01Q19/18 , H01Q19/00 , H05B6/74
摘要： PURPOSE:To achieve the uniform heating by emitting the electromagnetic waves received by the convex reflector toward the concave reflective mirror and by radiating the electromagnetic waves from the concave reflective mirror to the substance to be heated.

8. 发明专利

JPS52149683A TIMING ADJUSTER AND FEED CONTROL STRUCTURE THEREFOR 失效
公开(公告)号：JPS52149683A
公开(公告)日：1977-12-12
申请号：JP6654976
申请日：1976-06-09
申请人： HITACHI LTD
发明人： NANKOU SUSUMU , MAEJIMA HIROSHI , NASHIHARA HIROSHI
IPC分类号： B23P21/00 , B23Q41/02 , H01L21/677 , H01L21/68
摘要： PURPOSE:To take out and store parts without stopping a continuous feeder, if a work in an intermittent working section is interrupted. This is realized by providing a storing means between a feeder and working sections.

9. 发明专利

JPS5258459A VERTICAL HEATING FURNACE 失效
公开(公告)号：JPS5258459A
公开(公告)日：1977-05-13
申请号：JP13405375
申请日：1975-11-10
申请人： HITACHI LTD
发明人： ISHIOKA MASATO , YAMAGUCHI SHINICHI , NANKOU SUSUMU , MAEJIMA HIROSHI
IPC分类号： H01L21/22 , H01L21/20 , H01L21/31
摘要： PURPOSE:Air flow temperature is made even and the reduction in the size of the apparatus is achieved by providing an auxiliary chamber, fan and wind plate and swirling the air current within the furnace center.

10. 发明专利

JPS60161620A TREATER 失效
公开(公告)号：JPS60161620A
公开(公告)日：1985-08-23
申请号：JP1523284
申请日：1984-02-01
申请人： HITACHI OME ELECTRONIC CO , HITACHI LTD
发明人： NANKOU SUSUMU , NONAKA TOSHIO , MAEJIMA HIROSHI
IPC分类号： G03F7/26 , H01L21/027 , H01L21/30
摘要： PURPOSE:To produce multikinds without obstructing the continuous treatment of a line by spatially arranging a treating section and a carrying section for skipping the treating section to upper and lower sections and constituting both the treating section and the carrying section in a vertically movable manner. CONSTITUTION:A baking furnace 5 as a treating section is installed to an upper section in a base 4 and a skip carrying section 6 to a lower section in a baking device 2 for a semiconductor wafer. The base 4 is kept at the position of downward movement on the wafers W requiring baking, the wafers W being forwarded from a loader section 1 are placed on a heater base 14 for the baking furnace 5 in succession, and the wafers W are sent out to an unloader section 3 when baking is completed. A driving rod 12 is moved to the left by an air cylinder 13 and the base 4 is shifted upward on wafers W requiring no baking. The wafers W are carried to the unloader section 3 from the loader section 1 through the skip carrying section 6. The temperature of the baking furnace need not be lowered every time the wafers are skipped.

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