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1. 发明申请

WO03055014A2 SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE 审中-公开
标题翻译：半导体可饱和吸收器镜像器件
公开(公告)号：WO03055014A2
公开(公告)日：2003-07-03
申请号：PCT/CH0200680
申请日：2002-12-10
申请人： GIGA TERA AG , WEINGARTEN KURT , SPUEHLER GABRIEL J , KELLER URSULA , KRAINER LUKAS
发明人： WEINGARTEN KURT , SPUEHLER GABRIEL J , KELLER URSULA , KRAINER LUKAS
IPC分类号： G02F1/35 , H01S3/098 , H01S3/00
CPC分类号： H01S3/1118 , G02F1/3523
摘要： According to this invention, a "low field enhancement" (LFR) semiconductor saturable absorber device design is proposed. In this design, the structure is changed with respect to the prior art such that it no longer satisfies the anti-resonant condition but a resonant condition. Consequently the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the latter. According to one embodiment, the absorber device is a saturably absorbing semiconductor mirror device. In contrast with mirror devices according to the state of the art, a structure comprising the absorber and being placed on top of a Bragg reflector is provided which essentially fulfills a resonance condition, i.e. a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.
摘要翻译：根据本发明，提出了一种“低场增强”（LFR）半导体可饱和吸收体设计。在该设计中，结构相对于现有技术改变，使得其不再满足反谐振条件而是满足谐振条件。因此，间隔层中的场强显着更高，导致更小的饱和注量和更高的调制深度。然而，间隔层中的场仍然低于自由空间场，或仅与后者相比稍微增强。根据一个实施例，吸收装置是可饱和吸收半导体镜装置。与根据现有技术的反射镜装置相比，提供了包括吸收体并放置在布拉格反射器顶部的结构，其基本上实现谐振条件，即在结构中存在静止的电磁波。换句话说，设计使得场强在器件表面附近达到局部最大值。

2. 发明专利

AU2002349251A8 Semiconductor saturable absorber mirror device 未知
公开(公告)号：AU2002349251A8
公开(公告)日：2003-07-09
申请号：AU2002349251
申请日：2002-12-10
申请人： GIGA TERA AG
发明人： KELLER URSULA , WEINGARTEN KURT , SPUHLER GABRIEL J , KRAINER LUKAS
IPC分类号： G02F1/35 , H01S3/098 , H01S5/065
摘要： A "low field enhancement" (LFR) semiconductor saturable absorber device design in which the structure is changed such that it has a resonant condition. Consequently, the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the field in the free space. According to one embodiment, the absorber device is a Semiconductor Saturable Absorber Mirror (SESAM) device. In contrast with SESAMs according to the state of the art, a structure including the absorber and being placed on top of a Bragg reflector is provided, which essentially fulfills a resonance condition whereby a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.

3. 发明专利

AU2002349251A1 SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE 未知
公开(公告)号：AU2002349251A1
公开(公告)日：2003-07-09
申请号：AU2002349251
申请日：2002-12-10
申请人： GIGA TERA AG
发明人： WEINGARTEN KURT , SPUHLER GABRIEL J , KELLER URSULA , KRAINER LUKAS
IPC分类号： G02F1/35 , H01S3/098 , H01S3/00
摘要： A "low field enhancement" (LFR) semiconductor saturable absorber device design in which the structure is changed such that it has a resonant condition. Consequently, the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the field in the free space. According to one embodiment, the absorber device is a Semiconductor Saturable Absorber Mirror (SESAM) device. In contrast with SESAMs according to the state of the art, a structure including the absorber and being placed on top of a Bragg reflector is provided, which essentially fulfills a resonance condition whereby a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.

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